IRLZ44S Search Results

Contextual Info: IRLZ44S_RC, SiHLZ44S_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

Contextual Info: International Rectifier • 1,8551,52 DDlbDls b,4a* INR PD" 06 IRLZ44S HEXFET P ow er M O S F E T INTERNATIONAL RECTIFIER • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Logic-Level Gate Drive bSE H ^ dss - 60V • RDS on Specified at Vgs=4V & 5V

D2Pak Package vishay material

Abstract: IRLZ44S SiHLZ44S SiHLZ44S-E3
Contextual Info: IRLZ44S, SiHLZ44S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 60 RDS(on) (Ω) VGS = 5.0 V 0.028 Qg (Max.) (nC) 66 Qgs (nC) 12 Qgd (nC) 43 Configuration Single D • • • • • Surface Mount Available in Tape and Reel Dynamic dV/dt Rating

Contextual Info: IRLZ44S, SiHLZ44S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 60 RDS(on) () VGS = 5.0 V Qg (Max.) (nC) 0.028 66 Qgs (nC) 12 Qgd (nC) 43 Configuration Single D DESCRIPTION D2PAK (TO-263) G G D • Halogen-free According to IEC 61249-2-21

Contextual Info: IRLZ44S, SiHLZ44S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 60 RDS(on) () VGS = 5.0 V Qg (Max.) (nC) 0.028 66 Qgs (nC) 12 Qgd (nC) 43 Configuration Single D DESCRIPTION D2PAK (TO-263) G G D • Halogen-free According to IEC 61249-2-21

Contextual Info: IRLZ44S, SiHLZ44S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 60 RDS(on) () VGS = 5.0 V Qg (Max.) (nC) 0.028 66 Qgs (nC) 12 Qgd (nC) 43 Configuration Single D D2PAK (TO-263) G G D S S N-Channel MOSFET • Halogen-free According to IEC 61249-2-21

48 H diode

Contextual Info: IRLZ44S, SiHLZ44S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 60 RDS(on) () VGS = 5.0 V Qg (Max.) (nC) 0.028 66 Qgs (nC) 12 Qgd (nC) 43 Configuration Single D DESCRIPTION D2PAK (TO-263) G G D • Halogen-free According to IEC 61249-2-21

48 H diode

Contextual Info: IRLZ44S, SiHLZ44S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 60 RDS(on) () VGS = 5.0 V Qg (Max.) (nC) 0.028 66 Qgs (nC) 12 Qgd (nC) 43 Configuration Single D DESCRIPTION D2PAK (TO-263) G G D • Halogen-free According to IEC 61249-2-21

IRLZ44S

Abstract: SiHLZ44S SiHLZ44S-E3
Contextual Info: IRLZ44S, SiHLZ44S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 60 RDS(on) () VGS = 5.0 V Qg (Max.) (nC) 0.028 66 Qgs (nC) 12 Qgd (nC) 43 Configuration Single D D2PAK (TO-263) G G D S S N-Channel MOSFET • Halogen-free According to IEC 61249-2-21

SMD DIODE marking AB

Contextual Info: IRLZ44S, SiHLZ44S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 60 RDS(on) (Ω) VGS = 5.0 V 0.028 Qg (Max.) (nC) 66 Qgs (nC) 12 Qgd (nC) 43 Configuration • • • • • Surface Mount Available in Tape and Reel Dynamic dV/dt Rating Logic-Level Gate Drive

mj 1504

Abstract: 51a marking til 31a AN-994 IRLZ44S SMD-220 MARKING 51A SMD 51A
Contextual Info: PD-9.906 International Big Rectifier IRLZ44S HEXFET Power M O SFET • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Logic-Level Gate Drive • R D S on Specified at Vgs=4V & 5V • 175°C Operating Temperature • Fast Switching

Contextual Info: IRLZ44S Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V) I(D) Max. (A)50 I(DM) Max. (A) Pulsed I(D)36 @Temp (øC)100# IDM Max (@25øC Amb)200 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)150 Minimum Operating Temp (øC)-55õ

EIA-418

Abstract: K02A IRLZ44SPbF
Contextual Info: PD- 95393 IRLZ44SPbF • Lead-Free www.irf.com 1 06/10/04 IRLZ44SPbF 2 www.irf.com IRLZ44SPbF www.irf.com 3 IRLZ44SPbF 4 www.irf.com IRLZ44SPbF www.irf.com 5 IRLZ44SPbF 6 www.irf.com IRLZ44SPbF www.irf.com 7 IRLZ44SPbF D2Pak Package Outline Dimensions are shown in millimeters inches

Contextual Info: PD- 95393 IRLZ44SPbF • Lead-Free Document Number: 91329 06/10/04 www.vishay.com 1 IRLZ44SPbF Document Number: 91329 www.vishay.com 2 IRLZ44SPbF Document Number: 91329 www.vishay.com 3 IRLZ44SPbF Document Number: 91329 www.vishay.com 4 IRLZ44SPbF Document Number: 91329

smd diode 12c

Contextual Info: IRLZ44S, SiHLZ44S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 60 RDS(on) (Ω) VGS = 5.0 V 0.028 Qg (Max.) (nC) 66 Qgs (nC) 12 Qgd (nC) 43 Configuration • • • • • Surface Mount Available in Tape and Reel Dynamic dV/dt Rating Logic-Level Gate Drive

fqp60n06

Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
Contextual Info: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier

IRGKI165F06

Abstract: IRGDDN600M06 IRGDDN600K06 IRF7311 IRGNIN075 IRFK6H054 IRF7601 IRLI2203N IRLML2803 IRLML5103
Contextual Info: Index HEXFET Power MOSFETs Part Number International Rectifier ID R DS on V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID Continuous Drain Current 70°C (A) RθJ A Max Thermal Resistance (°C/W)

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

mosfet cross reference

Abstract: SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L
Contextual Info: Discrete POWER & Signal Technologies MOSFET Cross Reference Guide Industry Recommended Part Number Fairchild Device Package Industry Recommended Part Number Fairchild Device 2N7000 2N7000 TO-92, N IRF7203 FDS9435A 2N7002 2N7002 SOT-23, N IRF7204 NDS8434A SO-8, P

std2n52

Abstract: stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent
Contextual Info: POWER MOSFETS CROSS REFERENCE Industry standard 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1164 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205 2SK1231 2SK1232

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

BUT11APX equivalent

Abstract: BU4508DX equivalent 2SD1876 2Sd1651 equivalent BYS21-45 smd zener diode color band 2SD1878 data sheet 2SC5296 equivalent BT151-600R BUK98150 spice
Contextual Info: Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210

IRU1239SC

Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
Contextual Info: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK

1RLZ44

Abstract: 1RLZ44S 12v irlz44 AN-994 IRLZ44 IRLZ44S SMD-220 smd marking AJj a1494 L-179
Contextual Info: PD-9.559C International Rectifier IRLZ44 HEXFET Power MOSFET • Dynamic dv/dt Rating • Logic-Level Gate Drive V d ss- • FtDS on S p ecifie d a t V g s =4 V & 5V • • • • 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements