IRHM9130D Search Results

Contextual Info: IRHM9130D Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)11 I(DM) Max. (A) Pulsed I(D)7.0 @Temp (øC)100 IDM Max (@25øC Amb)44 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)-55

Contextual Info: Data Sheet No. PD-9.888 I3 R INTERNATIONAL RECTIFIER REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRHM913Q P-CHANNEL RAD HARD Product Summary -100 Volt, 0.300, RAD HARD HEXFET International Rectifier’s P-Channel RAD HARD Technology HEXFETs demonstrate excellent threshold voltage stability and

H265

Abstract: TO-254AA Package H266
Contextual Info: Data Sheet No. PD-9.888 INTERNATIONAL RECTIFIER REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRHM913Q P-CHANNEL RAD HARD -1 0 0 Volt, 0.30H, RAO HARD HEXFET Product Summary International Rectifier’s P-Channel RAD HARD Technology HEXFETs demonstrate excellent threshold voltage stability and