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    IRGS4062DPBF

    Abstract: ultrafast swiching transistor irgsl4062
    Text: PD - 97355 IRGS4062DPbF IRGSL4062DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • • Low VCE ON Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 µS short circuit SOA


    Original     		PDF IRGS4062DPbF IRGSL4062DPbF EIA-418. ultrafast swiching transistor irgsl4062

    irgs4062dpbf

    Abstract: IRGL4062D IRGS4062D
    Text: PD - 97355A IRGS4062DPbF IRGSL4062DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • • Low VCE ON Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 µS short circuit SOA


    Original     		PDF 7355A IRGS4062DPbF IRGSL4062DPbF Low14 EIA-418. irgs4062dpbf IRGL4062D IRGS4062D