IRG7PH35UDPBF Search Results

IRG7PH35UDPBF Price and Stock

Filter by Manufacturer


Infineon Technologies AG IRG7PH35UDPBF IGBT TRENCH 1200V 50A TO-247AC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRG7PH35UDPBF	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Verical	IRG7PH35UDPBF		824		73	1 - 10 - 100 $5.2 1000 $5.2 10000 $5.2	Buy Now
Rochester Electronics	IRG7PH35UDPBF		829		1	1 - 10 - 100 $3.95 1000 $3.54 10000 $3.33	Buy Now
EBV Elektronik	IRG7PH35UDPBF			143 Weeks	25	1 - 10 - 100 - 1000 - 10000 -	Buy Now
International Rectifier IRG7PH35UDPBF Discrete IGBT with Anti-Parallel Diode
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	IRG7PH35UDPBF		50		1	1 - 10 - 100 $3.95 1000 $3.54 10000 $3.33	Buy Now
ComSIT USA	IRG7PH35UDPBF		1,745			1 - 10 - 100 - 1000 - 10000 -	Get Quote

IRG7PH35UDPBF Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IRG7PH35UDPBF		International Rectifier	IGBTs - Single, Discrete Semiconductor Products, IGBT 1200V 50A 180W TO247AC		Original	PDF

IRG7PH35UDPBF Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
irg7ph35upbf Abstract: IRG7PH35U-EP IRG7PH35U 035H C-150 IRFPE30 IRGP30B120KD-E ir igbt 1200V 40A Contextual Info: PD - 97479 IRG7PH35UPbF IRG7PH35U-EP INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • C Low VCE ON trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient	Original	IRG7PH35UPbF IRG7PH35U-EP O-247AD irg7ph35upbf IRG7PH35U-EP IRG7PH35U 035H C-150 IRFPE30 IRGP30B120KD-E ir igbt 1200V 40A	PDF
irg7ph35udpbf Abstract: irg7ph35 400v 20A ultra fast recovery diode 600v 20a IGBT 600v 20a IGBT driver ir igbt 1200V 40A P channel 600v 20a IGBT ultrafast n channel 600v 20a IGBT C-150 IRG7PH35UD Contextual Info: PD-96288 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • Low VCE ON trench IGBT technology Low switching losses Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient	Original	PD-96288 IRG7PH35UDPbF IRG7PH35UD-EP O-247AD irg7ph35udpbf irg7ph35 400v 20A ultra fast recovery diode 600v 20a IGBT 600v 20a IGBT driver ir igbt 1200V 40A P channel 600v 20a IGBT ultrafast n channel 600v 20a IGBT C-150 IRG7PH35UD	PDF
irg7ph35 Abstract: IRG7PH35UD1PBF IRG7CH35UB IC A 3120 MIL-HDBK-263 IRG7PH35UD1-EP irg7ch35u IRG7PH35UD1 IRG7CH IRG7PH35UD Contextual Info: PD - 97463 IRG7CH35UB Features • • • • • C Low VCE ON Trench IGBT Technology Low Switching Losses Square RBSOA Positive VCE (ON) Temperature co-efficient Tight parameter distribution G E n-channel Benefits Applications • High Efficiency due to Low VCE(on) and Low Switching	Original	IRG7CH35UB irg7ph35 IRG7PH35UD1PBF IRG7CH35UB IC A 3120 MIL-HDBK-263 IRG7PH35UD1-EP irg7ch35u IRG7PH35UD1 IRG7CH IRG7PH35UD	PDF
Contextual Info: PD-96288 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • Low VCE ON trench IGBT technology Low switching losses Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient	Original	PD-96288 IRG7PH35UDPbF IRG7PH35UD-EP O-247AD	PDF
Contextual Info: IRG7PG35UPbF IRG7PG35U-EPbF INSULATED GATE BIPOLAR TRANSISTOR Features • Low VCE ON trench IGBT technology  Low switching losses  Square RBSOA  100% of the parts tested for ILM  Positive VCE (ON) temperature co-efficient	Original	IRG7PG35UPbF IRG7PG35U-EPbF O-247AC O-247AD IRG7PG35UPbF/IRG7PG35U-EPbF	PDF
Contextual Info: PD - 97479 IRG7PH35UPbF IRG7PH35U-EP INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • C Low VCE ON trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient	Original	IRG7PH35UPbF IRG7PH35U-EP O-247AD	PDF