IRG7PH35UDPBF Search Results

IRG7PH35UDPBF Price and Stock

Filter by Manufacturer


Infineon Technologies AG IRG7PH35UDPBF IGBT TRENCH 1200V 50A TO247AC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRG7PH35UDPBF	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Verical	IRG7PH35UDPBF		824		70	1 - 10 - 100 $5.175 1000 $4.675 10000 $4.675	Buy Now
Rochester Electronics	IRG7PH35UDPBF		829		1	1 $4.4 10 $4.4 100 $4.14 1000 $3.74 10000 $3.74	Buy Now
International Rectifier IRG7PH35UDPBF IRG7PH35 - Discrete IGBT with Anti-Parallel Diode '
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	IRG7PH35UDPBF		50		1	1 $4.4 10 $4.4 100 $4.14 1000 $3.74 10000 $3.74	Buy Now
ComSIT USA	IRG7PH35UDPBF		1,745			1 - 10 - 100 - 1000 - 10000 -	Get Quote

IRG7PH35UDPBF Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IRG7PH35UDPBF		International Rectifier	IGBTs - Single, Discrete Semiconductor Products, IGBT 1200V 50A 180W TO247AC		Original	PDF

IRG7PH35UDPBF Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
irg7ph35upbf Abstract: IRG7PH35U-EP IRG7PH35U 035H C-150 IRFPE30 IRGP30B120KD-E ir igbt 1200V 40A Text: PD - 97479 IRG7PH35UPbF IRG7PH35U-EP INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • C Low VCE ON trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient	Original	PDF	IRG7PH35UPbF IRG7PH35U-EP O-247AD irg7ph35upbf IRG7PH35U-EP IRG7PH35U 035H C-150 IRFPE30 IRGP30B120KD-E ir igbt 1200V 40A
irg7ph35udpbf Abstract: irg7ph35 400v 20A ultra fast recovery diode 600v 20a IGBT 600v 20a IGBT driver ir igbt 1200V 40A P channel 600v 20a IGBT ultrafast n channel 600v 20a IGBT C-150 IRG7PH35UD Text: PD-96288 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • Low VCE ON trench IGBT technology Low switching losses Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient	Original	PDF	PD-96288 IRG7PH35UDPbF IRG7PH35UD-EP O-247AD irg7ph35udpbf irg7ph35 400v 20A ultra fast recovery diode 600v 20a IGBT 600v 20a IGBT driver ir igbt 1200V 40A P channel 600v 20a IGBT ultrafast n channel 600v 20a IGBT C-150 IRG7PH35UD
irg7ph35 Abstract: IRG7PH35UD1PBF IRG7CH35UB IC A 3120 MIL-HDBK-263 IRG7PH35UD1-EP irg7ch35u IRG7PH35UD1 IRG7CH IRG7PH35UD Text: PD - 97463 IRG7CH35UB Features • • • • • C Low VCE ON Trench IGBT Technology Low Switching Losses Square RBSOA Positive VCE (ON) Temperature co-efficient Tight parameter distribution G E n-channel Benefits Applications • High Efficiency due to Low VCE(on) and Low Switching	Original	PDF	IRG7CH35UB irg7ph35 IRG7PH35UD1PBF IRG7CH35UB IC A 3120 MIL-HDBK-263 IRG7PH35UD1-EP irg7ch35u IRG7PH35UD1 IRG7CH IRG7PH35UD
Untitled Abstract: No abstract text available Text: PD-96288 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • Low VCE ON trench IGBT technology Low switching losses Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient	Original	PDF	PD-96288 IRG7PH35UDPbF IRG7PH35UD-EP O-247AD
Untitled Abstract: No abstract text available Text: IRG7PG35UPbF IRG7PG35U-EPbF INSULATED GATE BIPOLAR TRANSISTOR Features • Low VCE ON trench IGBT technology  Low switching losses  Square RBSOA  100% of the parts tested for ILM  Positive VCE (ON) temperature co-efficient	Original	PDF	IRG7PG35UPbF IRG7PG35U-EPbF O-247AC O-247AD IRG7PG35UPbF/IRG7PG35U-EPbF
Untitled Abstract: No abstract text available Text: PD - 97479 IRG7PH35UPbF IRG7PH35U-EP INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • C Low VCE ON trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient	Original	PDF	IRG7PH35UPbF IRG7PH35U-EP O-247AD