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Vishay Siliconix IRFZ14L MOSFET N-CH 60V 10A TO262-3
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IRFZ14L Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IRFZ14L		International Rectifier	HEXFET POWER MOSFET		Original	PDF
IRFZ14L		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 10A TO-262		Original	PDF
IRFZ14L		Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.		Historical	PDF

IRFZ14L Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
IRFZ14L Abstract: IRFZ14S SiHFZ44L IRFZ14STRL SiHFZ14L SiHFZ14L-E3 SiHFZ14S SiHFZ14S-E3 SiHFZ14STL Text: IRFZ14S, IRFZ14L, SiHFZ14S, SiHFZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 60 RDS(on) (Ω) VGS = 10 V 0.20 Qg (Max.) (nC) 11 Qgs (nC) 3.1 Qgd (nC) 5.8 Configuration Single D2PAK (TO-263) G G D S Advanced Process Technology Surface Mount (IRFZ14S, SiHFZ14S)	Original	PDF	IRFZ14S, IRFZ14L, SiHFZ14S SiHFZ14L O-263) O-262) IRFZ14L IRFZ14S SiHFZ44L IRFZ14STRL SiHFZ14L-E3 SiHFZ14S-E3 SiHFZ14STL
Untitled Abstract: No abstract text available Text: IRFZ14S, IRFZ14L, SiHFZ14S, SiHFZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRFZ14S, SiHFZ14S) • Low-Profile Through-Hole (IRFZ14L, SiHFZ14L)	Original	PDF	IRFZ14S, IRFZ14L, SiHFZ14S SiHFZ14L 2002/95/EC 2002/95/EC.
Untitled Abstract: No abstract text available Text: IRFZ14S, IRFZ14L, SiHFZ14S, SiHFZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRFZ14S, SiHFZ14S) • Low-Profile Through-Hole (IRFZ14L, SiHFZ14L)	Original	PDF	IRFZ14S, IRFZ14L, SiHFZ14S SiHFZ14L 2002/95/EC 11-Mar-11
Untitled Abstract: No abstract text available Text: IRFZ14S, IRFZ14L, SiHFZ14S, SiHFZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRFZ14S, SiHFZ14S) • Low-Profile Through-Hole (IRFZ14L, SiHFZ14L)	Original	PDF	IRFZ14S, IRFZ14L, SiHFZ14S SiHFZ14L 2002/95/EC 11-Mar-11
AN-994 Abstract: IRFZ14 IRFZ14L IRFZ14S Text: PD - 9.890A IRFZ14S/L HEXFET Power MOSFET l l l l l Advanced Process Technology Surface Mount IRFZ14S Low-profile through-hole (IRFZ14L) 175°C Operating Temperature Fast Switching D VDSS = 60V RDS(on) = 0.20Ω G ID = 10A S Description Third Generation HEXFETs from International Rectifier	Original	PDF	IRFZ14S/L IRFZ14S) IRFZ14L) AN-994 IRFZ14 IRFZ14L IRFZ14S
AN-994 Abstract: IRFZ14 IRFZ14L IRFZ14S Text: PD - 9.890A IRFZ14S/L HEXFET Power MOSFET l l l l l Advanced Process Technology Surface Mount IRFZ14S Low-profile through-hole (IRFZ14L) 175°C Operating Temperature Fast Switching D VDSS = 60V RDS(on) = 0.20Ω G ID = 10A S Description Third Generation HEXFETs from International Rectifier	Original	PDF	IRFZ14S/L IRFZ14S) IRFZ14L) AN-994 IRFZ14 IRFZ14L IRFZ14S
IRFZ14L Abstract: IRFZ14S IRFZ14STRL SiHFZ14L SiHFZ14S SiHFZ14STL SiHFZ44L Text: IRFZ14S, IRFZ14L, SiHFZ14S, SiHFZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 60 RDS(on) () VGS = 10 V 0.20 Qg (Max.) (nC) 11 Qgs (nC) 3.1 Qgd (nC) 5.8 Configuration Single DESCRIPTION D D2PAK (TO-263) I2PAK (TO-262) G G D S • Halogen-free According to IEC 61249-2-21	Original	PDF	IRFZ14S, IRFZ14L, SiHFZ14S SiHFZ14L O-263) O-262) IRFZ14L IRFZ14S IRFZ14STRL SiHFZ14STL SiHFZ44L
SiHFZ44L Abstract: No abstract text available Text: IRFZ14S, IRFZ14L, SiHFZ14S, SiHFZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 60 RDS(on) (Ω) VGS = 10 V 0.20 Qg (Max.) (nC) 11 Qgs (nC) 3.1 Qgd (nC) 5.8 Configuration Single (TO-262) D2PAK G Advanced Process Technology Surface Mount (IRFZ14S/SiHFZ14S)	Original	PDF	IRFZ14S, IRFZ14L, SiHFZ14S SiHFZ14L IRFZ14S/SiHFZ14S) IRFZ14L/SiHFZ14L) 18-Jul-08 SiHFZ44L
451 MOSFET Abstract: No abstract text available Text: PD - 9.890A IRFZ14S/L HEXFET Power MOSFET l l l l l Advanced Process Technology Surface Mount IRFZ14S Low-profile through-hole (IRFZ14L) 175°C Operating Temperature Fast Switching D VDSS = 60V RDS(on) = 0.20Ω G ID = 10A S Description Third Generation HEXFETs from International Rectifier	Original	PDF	IRFZ14S/L IRFZ14S) IRFZ14L) 08-Mar-07 451 MOSFET
Untitled Abstract: No abstract text available Text: IRFZ14S, IRFZ14L, SiHFZ14S, SiHFZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRFZ14S, SiHFZ14S) • Low-Profile Through-Hole (IRFZ14L, SiHFZ14L)	Original	PDF	IRFZ14S, IRFZ14L, SiHFZ14S SiHFZ14L 2002/95/EC 2011/65/EU
Untitled Abstract: No abstract text available Text: IRFZ14S, IRFZ14L, SiHFZ14S, SiHFZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 60 RDS(on) (Ω) VGS = 10 V 0.20 Qg (Max.) (nC) 11 Qgs (nC) 3.1 Qgd (nC) 5.8 Configuration Single (TO-262) D2PAK G Advanced Process Technology Surface Mount (IRFZ14S/SiHFZ14S)	Original	PDF	IRFZ14S, IRFZ14L, SiHFZ14S SiHFZ14L IRFZ14S/SiHFZ14S) IRFZ14L/SiHFZ14L) 12-Mar-07
Untitled Abstract: No abstract text available Text: IRFZ14S, IRFZ14L, SiHFZ14S, SiHFZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 60 RDS(on) () VGS = 10 V 0.20 Qg (Max.) (nC) 11 Qgs (nC) 3.1 Qgd (nC) 5.8 Configuration Single DESCRIPTION D D2PAK (TO-263) I2PAK (TO-262) G G D S • Halogen-free According to IEC 61249-2-21	Original	PDF	IRFZ14S, IRFZ14L, SiHFZ14S SiHFZ14L 2002/95/EC 18-Jul-08
Untitled Abstract: No abstract text available Text: IRFZ14S, IRFZ14L, SiHFZ14S, SiHFZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRFZ14S, SiHFZ14S) • Low-Profile Through-Hole (IRFZ14L, SiHFZ14L)	Original	PDF	IRFZ14S, IRFZ14L, SiHFZ14S SiHFZ14L 2002/95/EC 11-Mar-11
AN-994 Abstract: IRFZ14 IRFZ14L IRFZ14S 548H Text: PD - 9.890A IRFZ14S/L HEXFET Power MOSFET l l l l l Advanced Process Technology Surface Mount IRFZ14S Low-profile through-hole (IRFZ14L) 175°C Operating Temperature Fast Switching D VDSS = 60V RDS(on) = 0.20Ω G ID = 10A S Description Third Generation HEXFETs from International Rectifier	Original	PDF	IRFZ14S/L IRFZ14S) IRFZ14L) 12-Mar-07 AN-994 IRFZ14 IRFZ14L IRFZ14S 548H

Untitled Abstract: No abstract text available Text: PD - 9.890A International IQ R Rectifier IR F Z 14 S /L HEXFET Power M OSFET Advanced Process Technology Surface Mount IRFZ14S Low-profile through-hole (IRFZ14L) 175°C Operating Temperature Fast Switching V dss = 60V R D S (o n ) Id = = 0 .2 0 ft 10A	OCR Scan	PDF	IRFZ14S) IRFZ14L)