IRFY130CM Search Results

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Infineon Technologies AG IRFY130CM 100V, 14.4A, 0.180 ohmTO-257, Ceramic
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Future Electronics	IRFY130CM	Bag			50	1 $268.61 10 $255.82 100 $255.82 1000 $255.82 10000 $255.82	Buy Now
International Rectifier IRFY130CM
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	IRFY130CM		11			1 $279.408 10 $271.4249 100 $255.4587 1000 $255.4587 10000 $255.4587	Buy Now
	IRFY130CM		6			1 $358.148 10 $347.9152 100 $347.9152 1000 $347.9152 10000 $347.9152	Buy Now
International Rectifier IRFY130CMSCX
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	IRFY130CMSCX		1			1 $210 10 $210 100 $210 1000 $210 10000 $210	Buy Now

IRFY130CM Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IRFY130CM		International Rectifier	HEXFET Power Mosfet		Original	PDF
IRFY130CM		International Rectifier	HEXFET Power Mosfet		Original	PDF
IRFY130CM		International Rectifier	Power MOSFET		Original	PDF
IRFY130CM		Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.		Historical	PDF

IRFY130CM Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
IRFY130C Abstract: IRFY130CM Text: Provisional Data Sheet No. PD 9.1286C IRFY130CM HEXFET POWER MOSFET N-CHANNEL Product Summary 100 Volt, 0.18Ω HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance.	Original	PDF	1286C IRFY130CM IRFY130C IRFY130CM
Untitled Abstract: No abstract text available Text: PD - 91286D POWER MOSFET THRU-HOLE TO-257AA IRFY130C,IRFY130CM 100V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number R DS(on) ID Eyelets IRFY130C 0.18 Ω 14.4A Ceramic IRFY130CM 0.18 Ω 14.4A Ceramic HEXFET® MOSFET technology is the key to International	Original	PDF	91286D O-257AA) IRFY130C IRFY130CM IRFY130C IRFY130C, O-257AA
IRFY130C Abstract: IRFY130CM Text: Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD 9.1286C IRFY130CM HEXFET POWER MOSFET N-CHANNEL Product Summary 100 Volt, 0.18Ω HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance.	Original	PDF	1286C IRFY130CM IRFY130C IRFY130CM
IRFY130C Abstract: IRFY130CM Text: PD - 91286D POWER MOSFET THRU-HOLE TO-257AA IRFY130C,IRFY130CM 100V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number R DS(on) ID Eyelets IRFY130C 0.18 Ω 14.4A Ceramic IRFY130CM 0.18 Ω 14.4A Ceramic HEXFET® MOSFET technology is the key to International	Original	PDF	91286D O-257AA) IRFY130C IRFY130CM IRFY130C IRFY130C, O-257AA IRFY130CM
IRF460 Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065 Text: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,	Original	PDF	30am-5 44-0-1737-2com DB8029C IRF460 SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
IRFM9034 Abstract: irh7c50se IRFM460 irhy IRFE310 international rectifier p JANSR2N7261 Text: International Rectifier Government and Space Products BVDSS Part Number Channel V RDS(on) (Ω) PD @ TC = 25°C ID @ T =100°C C (A) ID @ T =25 C (A) Total Dose Rating Rads (Si) (W) Fax-on-Demand HEXFET Power MOSFETs to view a data sheet, click on the part number	Original	PDF	IRHE7110 IRHE7130 IRHE7230 IRHE8110 IRHE8130 IRHE8230 IRHE9130 IRHE9230 IRHG7110 IRHG6110 IRFM9034 irh7c50se IRFM460 irhy IRFE310 international rectifier p JANSR2N7261
irf5n5210sc Abstract: IRHNA57064SCS IRHM597260 irf5n5210 irhna597160scs irhf7110scs IRHG57110 IRHNA57264SESCS 35CLQ045SCS 12CLQ150SCS Text: PD - 94246A IRHG567110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET 4# TECHNOLOGY THRU-HOLE MO-036AB Product Summary Part Number IRHG567110 IRHG563110 IRHG567110 IRHG563110 Radiation Level RDS(on) 100K Rads (Si)	Original	PDF	4246A IRHG567110 MO-036AB) IRHG563110 MO-036AB O-254AA 22JGQ045SCV irf5n5210sc IRHNA57064SCS IRHM597260 irf5n5210 irhna597160scs irhf7110scs IRHG57110 IRHNA57264SESCS 35CLQ045SCS 12CLQ150SCS
10RIA10 Abstract: HFA40HF120 irfm9034 10RIA100 10RIA120 10RIA20 10RIA40 10RIA60 JANSR2N7261 70HF Text: Index International Rectifier Government and Space Products Level of Quality Part Number Rectifiers Voltage Current CECC Issue Issue Assessment and CECC V (A) Specs Number Date 50 000 Screen Level Options Fax-on-Demand CECC-Qualifed, Europe Mfg. in Italy	Original	PDF	DO-203AA HFA40HF120 HFA40HF60 O-254AA HFA35HB120 HFA35HB120C HFA35HB60 HFA35HB60C O-258AA HFA45HC120C 10RIA10 HFA40HF120 irfm9034 10RIA100 10RIA120 10RIA20 10RIA40 10RIA60 JANSR2N7261 70HF
IRHNA57064SCS Abstract: IRHNJ597230SCS IRHNJ9130SCS IRHG6110SCS IRHY7434 IRHE57130SCS 8CLJQ045SCV IRHNJ57034SCS irfy9230 35CLQ045SCS Text: PD - 94046B RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ597230 200V, P-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHNJ597230 100K Rads (Si) IRHNJ593230 300K Rads (Si) RDS(on) 0.505Ω 0.505Ω ID -8.0A -8.0A SMD-0.5	Original	PDF	94046B IRHNJ597230 IRHNJ593230 O-254AA 22JGQ045SCV 22GQ100SCV 25GQ045SCS IRHNA57064SCS IRHNJ597230SCS IRHNJ9130SCS IRHG6110SCS IRHY7434 IRHE57130SCS 8CLJQ045SCV IRHNJ57034SCS irfy9230 35CLQ045SCS
Untitled Abstract: No abstract text available Text: PD - 94183 POWER MOSFET THRU-HOLE TO-257AA IRFY130,IRFY130M 100V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number R DS(on) ID Eyelets IRFY130 0.18 Ω 14.4A Glass IRFY130M 0.18 Ω 14.4A Glass HEXFET® MOSFET technology is the key to International	Original	PDF	O-257AA) IRFY130 IRFY130M IRFY130 IRFY130, O-257AA
2N7550 Abstract: 2N7549 2n7545 2N7476T1 smd 92112 2N7546 IRHNJ9130SCS 2N7471 2N7426 2N7468 Text: Hi-Rel Products Shortform Hermetic MOSFETs High Voltage MOSFETs for PFC and Primary Switch Applications Hi-Rel Components Schottky and HEXFRED Products Hi-Rel Schottky Diodes Hi-Rel HEXFRED  Diodes Hi-Rel Linear and Switching Regulators Fixed Voltage Regulators	Original	PDF
2N6764 JANTX Abstract: 91447 IR2113L Text: Government / Space Products Catalog of Available Documents Revised 5/11/99 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100  Radiation-Hardened HEXFET Description Datasheets IRH7054 IRH7130 IRH7150 IRH7230 IRH7250 IRH7250SE IRHF7330SE IRHF7430SE IRH7450	Original	PDF	IRH7054 IRH7130 IRH7150 IRH7230 IRH7250 IRH7250SE IRHF7330SE IRHF7430SE IRH7450 IRH7450SE 2N6764 JANTX 91447 IR2113L
irf 44 n Abstract: IRFY130 IRFY130C IRFY130CM IRFY130M 144A Text: PD - 94183 POWER MOSFET THRU-HOLE TO-257AA IRFY130,IRFY130M 100V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number R DS(on) ID Eyelets IRFY130 0.18 Ω 14.4A Glass IRFY130M 0.18 Ω 14.4A Glass HEXFET® MOSFET technology is the key to International	Original	PDF	O-257AA) IRFY130 IRFY130M IRFY130 IRFY130, O-257AA irf 44 n IRFY130C IRFY130CM IRFY130M 144A
2N6782 JANTX Abstract: 2N6758 JANTX 2N6756 JANTX 2N6766 JANTX 2N6792 JANTX 2N6796U 60022 2N7236 2n6806 jantx 2N6770 JANTX Text: Government / Space Products Catalog of Available Documents Revised 8/27/98 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100  Radiation-Hardened HEXFET Document # Pages Date IRH7054 90883 5 Oct-96 IRH7150 90677 13 Oct-96 IRH7250 90697 13 Oct-96 IRH7450SE	Original	PDF	IRH7054 Oct-96 IRH7150 IRH7250 IRH7450SE Nov-96 IRH8054 2N6782 JANTX 2N6758 JANTX 2N6756 JANTX 2N6766 JANTX 2N6792 JANTX 2N6796U 60022 2N7236 2n6806 jantx 2N6770 JANTX

irfm9034 Abstract: No abstract text available Text: 1 I n t e r n a t io n a l R e c t if ie r Government and Space Products Pvt Numb« 2 (3) bvdss (Vote) RDS(on) (Ohms) ID« Tc2T (Amps) 10« TC=100“ (Amps) Pd O Tc«25° (Watts) Fax-onOamand Number Case Styl«, (Cas (Min») (1) HEXFET Power MOSFETs Hermetic Package, N- and P-Channel	OCR Scan	PDF	IRFAF30 IRFAF40 IRFAF50 IRFAG30 IRFAG40 IRFAG50 IRF9130 JANTX2N6804 JANTXV2N6804 IRF9140 irfm9034
Untitled Abstract: No abstract text available Text: I Provisional Data Sheet No. PD 9 .1 286C International Rectifier IGR IR FY 1 3 0 C M HEXFET PO W ER M O S FE T N-CHANNEL Product Summary 100 Volt, 0.18Q HEXFET HEXFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. The effi	OCR Scan	PDF
MOSFET ior 144 Abstract: No abstract text available Text: International [ 3 Rectifier Provisional Data Sheet No. PD 9.1286 IRFY1 3 0 CM HEXFET POWER MOSFET : : Description N -C H A N N E L Product Summary HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very	OCR Scan	PDF	O-257AA 4A55452 MOSFET ior 144