IRFY130M Search Results
IRFY130M Datasheets (4)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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IRFY130M | International Rectifier | 100V, N-CHANNEL HEXFET MOSFET TECHNOLOGY | Original | |||
IRFY130M |
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N-Channel MOSFET in a Hermetically Sealed TO257AB Metal Package | Original | |||
IRFY130M | International Rectifier | HEXFET Transistors | Scan | |||
IRFY130M | International Rectifier | Government / Space Products - High Reliability Power MOSFETS | Scan |
IRFY130M Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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shd226302
Abstract: IRFY130M
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Original |
SHD226302 SHD22632 IRFY130M 250mA shd226302 IRFY130M | |
IRFY130MContextual Info: IRFY130M Dimensions in mm inches . N-Channel MOSFET in a Hermetically sealed TO257AB Metal Package. 10.6 (0.42) 4.6 (0.18) 10.6 (0.42) 3.70 Dia. Nom 1.5(0.53) 16.5 (0.65) 0.8 (0.03) 1 2 3 12.70 (0.50 min) VDSS = 100V ID = 14.4A RDS(ON) = 0.18Ω Ω 1.0 (0.039) |
Original |
IRFY130M O257AB O257AB O220M) 13-Sep-02 IRFY130M | |
Contextual Info: PD - 94183 POWER MOSFET THRU-HOLE TO-257AA IRFY130,IRFY130M 100V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number R DS(on) ID Eyelets IRFY130 0.18 Ω 14.4A Glass IRFY130M 0.18 Ω 14.4A Glass HEXFET® MOSFET technology is the key to International |
Original |
O-257AA) IRFY130 IRFY130M IRFY130 IRFY130, O-257AA | |
Contextual Info: SENSITRON SEMICONDUCTOR SHD226302 TECHNICAL DATA DATA SHEET 222, REV. B Formerly Part Number SHD22632 HERMETIC POWER MOSFET N-CHANNEL FEATURES: 100 Volt, .19 Ohm, 11A MOSFET Isolated Hermetic Metal Package Fast Switching Low RDS on Equivalent to IRFY130M |
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SHD22632 SHD226302 IRFY130M SHD226302 O-257 O-257 | |
IRFY130M
Abstract: SHD226302
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Original |
SHD226302 SHD22632 IRFY130M IRFY130M SHD226302 | |
irf 44 n
Abstract: IRFY130 IRFY130C IRFY130CM IRFY130M 144A
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O-257AA) IRFY130 IRFY130M IRFY130 IRFY130, O-257AA irf 44 n IRFY130C IRFY130CM IRFY130M 144A | |
Contextual Info: IRFY130M Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V) I(D) Max. (A)10.8 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)43.2 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)45 Minimum Operating Temp (øC) |
Original |
IRFY130M | |
Diode 400V 5A
Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
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2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 Diode 400V 5A lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN | |
fet 500v 10A
Abstract: 130NC IRFM044
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Original |
IRFM360" IRFM360 IRFM360-JQR-B 4200pF 140nC 140nC IRFM044" IRFM044 IRFM044-JQR-B fet 500v 10A 130NC | |
IRLF110
Abstract: SMD H21 IRFJ130 IRFJ120 IRFN054 IRFN150 IRFN250 IRFN350 IRFN450 IRLF120
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OCR Scan |
GG101Ã IRLF110 IRLF120 IRLF130 O-205AF IRFN054 IRFN150 IRFN250 IRFN350 IRFN450 SMD H21 IRFJ130 IRFJ120 |