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    IRFS74 Price and Stock

    Infineon Technologies AG IRFS7434TRL7PP

    MOSFET N-CH 40V 240A D2PAK-7
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    DigiKey IRFS7434TRL7PP Digi-Reel 7,205 1
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    IRFS7434TRL7PP Cut Tape 7,205 1
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    IRFS7434TRL7PP Reel 7,200 800
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    Avnet Americas IRFS7434TRL7PP Reel 1,600 12 Weeks 800
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    IRFS7434TRL7PP Ammo Pack 17 Weeks, 3 Days 1
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    Mouser Electronics IRFS7434TRL7PP 13,645
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    IRFS7434TRL7PP Reel 800
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    Chip One Stop IRFS7434TRL7PP Cut Tape 1,150 0 Weeks, 1 Days 1
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    Infineon Technologies AG IRFS7434TRLPBF

    MOSFET N-CH 40V 195A D2PAK
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    DigiKey IRFS7434TRLPBF Digi-Reel 2,549 1
    • 1 $2.53
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    IRFS7434TRLPBF Reel 2,400 800
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    Infineon Technologies AG IRFS7437TRLPBF

    MOSFET N CH 40V 195A D2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFS7437TRLPBF Digi-Reel 2,438 1
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    Verical IRFS7437TRLPBF 79,200 435
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    Infineon Technologies AG IRFS7430TRL7PP

    MOSFET N-CH 40V 240A D2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFS7430TRL7PP Cut Tape 1,958 1
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    IRFS7430TRL7PP Digi-Reel 1,958 1
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    IRFS7430TRL7PP Reel 1,600 800
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    Infineon Technologies AG IRFS7440TRLPBF

    MOSFET N CH 40V 120A D2PAK
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    IRFS74 Datasheets (33)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFS740 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRFS740 Unknown FET Data Book Scan PDF
    IRFS740 Samsung Electronics N-Channel Power MOSFETS Scan PDF
    IRFS740 Samsung Electronics N-Channel Power MOSFETS Scan PDF
    IRFS740 Samsung Electronics N-Channel Power MOSFETS Scan PDF
    IRFS740A Fairchild Semiconductor Advanced Power MOSFET Original PDF
    IRFS740A Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRFS740B Fairchild Semiconductor 400V N-Channel MOSFET Original PDF
    IRFS740B Fairchild Semiconductor 400V N-Channel MOSFET Original PDF
    IRFS741 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRFS741 Unknown FET Data Book Scan PDF
    IRFS741 Samsung Electronics N-Channel Power MOSFETS Scan PDF
    IRFS741 Samsung Electronics N-Channel Power MOSFETS Scan PDF
    IRFS742 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRFS742 Unknown FET Data Book Scan PDF
    IRFS742 Samsung Electronics N-Channel Power MOSFETS Scan PDF
    IRFS743 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRFS743 Unknown FET Data Book Scan PDF
    IRFS743 Samsung Electronics N-Channel Power MOSFETS Scan PDF
    IRFS7430-7PPBF Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 240A D2PAK Original PDF

    IRFS74 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: StrongIRFET™ IRFS7430PbF IRFSL7430PbF HEXFET Power MOSFET Applications l Brushed motor drive applications l BLDC motor drive applications l Battery powered circuits l Half-bridge and full-bridge topologies l Synchronous rectifier applications l Resonant mode power supplies


    Original
    IRFS7430PbF IRFSL7430PbF O-262 IRFS7430TRLPbF 1452mJ PDF

    Untitled

    Abstract: No abstract text available
    Text: StrongIRFET™ IRFS7437PbF IRFSL7437PbF Applications l Brushed Motor drive applications l BLDC Motor drive applications l Battery powered circuits l Half-bridge and full-bridge topologies l Synchronous rectifier applications l Resonant mode power supplies l OR-ing and redundant power switches


    Original
    IRFS7437PbF IRFSL7437PbF O-26le 802mJ PDF

    SL7440

    Abstract: IRFS7440 d772 IRFSL7440PBF
    Text: StrongIRFET™ IRFS7440PbF IRFSL7440PbF Applications l l l l l l l l l Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications Resonant mode power supplies


    Original
    IRFS7440PbF IRFSL7440PbF IRFS7440 D-020D) SL7440 d772 IRFSL7440PBF PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFS742 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)400 V(BR)GSS (V)20 I(D) Max. (A)4.5 I(DM) Max. (A) Pulsed I(D)2.5 @Temp (øC)100# IDM Max (@25øC Amb)33 @Pulse Width (s) (Condition)300u Absolute Max. Power Diss. (W)40 Minimum Operating Temp (øC)-55õ


    Original
    IRFS742 PDF

    IRFS7437

    Abstract: IRFSL7437PBF IRFS743
    Text: StrongIRFET™ IRFS7437PbF IRFSL7437PbF Applications l Brushed Motor drive applications l BLDC Motor drive applications l Battery powered circuits l Half-bridge and full-bridge topologies l Synchronous rectifier applications l Resonant mode power supplies l OR-ing and redundant power switches


    Original
    IRFS7437PbF IRFSL7437PbF IRFS7437PbF O-262 D-020D) IRFS7437 IRFSL7437PBF IRFS743 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF740B/IRFS740B 400V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original
    IRF740B/IRFS740B PDF

    Untitled

    Abstract: No abstract text available
    Text: StrongIRFET™ IRFS7434PbF IRFSL7434PbF Applications l l l l l l l l l HEXFET Power MOSFET Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications Resonant mode power supplies


    Original
    IRFS7434PbF IRFSL7434PbF 1098mJ PDF

    Untitled

    Abstract: No abstract text available
    Text: StrongIRFET™ IRFS7437PbF IRFSL7437PbF Applications l Brushed Motor drive applications l BLDC Motor drive applications l Battery powered circuits l Half-bridge and full-bridge topologies l Synchronous rectifier applications l Resonant mode power supplies l OR-ing and redundant power switches


    Original
    IRFS7437PbF IRFSL7437PbF O-26er PDF

    IRFS7437-7PPBF

    Abstract: No abstract text available
    Text: StrongIRFET™ IRFS7437-7PPbF Applications l Brushed Motor drive applications l BLDC Motor drive applications l PWM Inverterized topologies l Battery powered circuits l Half-bridge and full-bridge topologies l Electronic ballast applications l Synchronous rectifier applications


    Original
    IRFS7437-7PPbF IRFS7437-7PPBF PDF

    IRFS740A

    Abstract: No abstract text available
    Text: IRFS740A Advanced Power MOSFET FEATURES BVDSS = 400 V Avalanche Rugged Technology RDS on = 0.55 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 5.7 A Improved Gate Charge Extended Safe Operating Area TO-220F Lower Leakage Current : 10 µA (Max.) @ VDS = 400V


    Original
    IRFS740A O-220F IRFS740A PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFS743 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)350 V(BR)GSS (V)20 I(D) Max. (A)4.5 I(DM) Max. (A) Pulsed I(D)2.5 @Temp (øC)100# IDM Max (@25øC Amb)33 @Pulse Width (s) (Condition)300u Absolute Max. Power Diss. (W)40 Minimum Operating Temp (øC)-55õ


    Original
    IRFS743 PDF

    IRFS740B

    Abstract: No abstract text available
    Text: IRFS740B 400V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching


    Original
    IRFS740B IRFS740B PDF

    Irf 1540 N

    Abstract: MOSFET IRF 1540
    Text: StrongIRFET™ IRFS7434PbF IRFSL7434PbF Applications l l l l l l l l l HEXFET Power MOSFET Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications Resonant mode power supplies


    Original
    IRFS7434PbF IRFSL7434PbF JESD47F O-262 Irf 1540 N MOSFET IRF 1540 PDF

    Untitled

    Abstract: No abstract text available
    Text: StrongIRFET IRFS7430-7PPbF Application  Brushed Motor drive applications  BLDC Motor drive applications PWM Inverterized topologies Battery powered circuits  Half-bridge and full-bridge topologies  Electronic ballast applications


    Original
    IRFS7430-7PPbF JESD47F) PDF

    IRFS7437-7PPBF

    Abstract: No abstract text available
    Text: StrongIRFET™ IRFS7437-7PPbF Applications l Brushed Motor drive applications l BLDC Motor drive applications l PWM Inverterized topologies l Battery powered circuits l Half-bridge and full-bridge topologies l Electronic ballast applications l Synchronous rectifier applications


    Original
    IRFS7437-7PPbF 796mJ IRFS7437-7PPBF PDF

    IRFS7437

    Abstract: d2pak-7 IRFS7437-7PPBF IRFS7437-7P
    Text: StrongIRFET™ IRFS7437-7PPbF Applications l Brushed Motor drive applications l BLDC Motor drive applications l PWM Inverterized topologies l Battery powered circuits l Half-bridge and full-bridge topologies l Electronic ballast applications l Synchronous rectifier applications


    Original
    IRFS7437-7PPbF TD-020D) IRFS7437 d2pak-7 IRFS7437-7PPBF IRFS7437-7P PDF

    irf740b

    Abstract: IRFS740B
    Text: IRF740B/IRFS740B 400V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original
    IRF740B/IRFS740B O-220ner irf740b IRFS740B PDF

    Untitled

    Abstract: No abstract text available
    Text: StrongIRFET IRFS7434-7PPbF Application  Brushed Motor drive applications  BLDC Motor drive applications Battery powered circuits  Half-bridge and full-bridge topologies  Synchronous rectifier applications  Resonant mode power supplies


    Original
    IRFS7434-7PPbF JESD47F) PDF

    irf 940

    Abstract: IRF740B IRFS740B
    Text: IRF740B/IRFS740B 400V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original
    IRF740B/IRFS740B O-220ner irf 940 IRF740B IRFS740B PDF

    mospet

    Abstract: 362 N MOSFET IRFS740A
    Text: IRFS740A Advanced Power MOSFET FEATURES ^D SS • ■ ■ ■ ■ Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area ■ ■ Lower Leakage Current : 10 jjA Max. @ Lower Rds«*^ : 0.437 £2 (Typ.)


    OCR Scan
    IRFS740A mospet 362 N MOSFET IRFS740A PDF

    um 741

    Abstract: LS 741 a 741 j
    Text: N-CHANNEL POWER MOSFETS IRFS740/741/742/743 FEATURES • • • • • • • Lower Rds O N Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high tem perature reliability


    OCR Scan
    IRFS740/741/742/743 IRFS741 IRFS740 IRFS742 IRFS743 um 741 LS 741 a 741 j PDF

    ci 741

    Abstract: tl 741 IRFS740 742 mosfet CI 4017 IRFS743 LS 741 mosfet 350v 10A te 4017 IRFS741
    Text: SA MS UN G E L E C T R O N I C S INC b7E ]> • 0 D 1 7 3 7 4 034 N-CHANNEL POWER MOSFETS IRFS740/741/742/743 FEATURES • • • • • • • Lower R d s ON Improved inductive ruggedness Fast sw itching times Rugged polysilicon gate cell structure Lower input capacitance


    OCR Scan
    0D17374 IRFS740/741/742/743 O-220F IRFS740/741/742/743 IRFS740 IRFS741 IRFS742 IRFS743 ci 741 tl 741 742 mosfet CI 4017 LS 741 mosfet 350v 10A te 4017 PDF

    Untitled

    Abstract: No abstract text available
    Text: Advanced IRFS740A P o w e r M O SFEJT FEATURES = 400 V ^ D S o n = 0 .5 5 a b v dss • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 |iA (M a x .) @ V DS = 400V


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    IRFS740A PDF

    IRFS740

    Abstract: IRFS741 uA 741 NC K 741 MOSFET
    Text: N-CHANNEL POWER MOSFETS IRFS740/741 FEATURES • Lower R ds<oni • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended sale operating area • Improved high temperature reliability


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    IRFS740/741 IRFS740 IRFS741 to-220f 7Tb4142 00EA3E0 uA 741 NC K 741 MOSFET PDF