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    IRFP322 Search Results

    IRFP322 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFP322 Unknown FET Data Book Scan PDF

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    1RFP240

    Abstract: IRFP310 T03P IRFP243 irfp250 irfp320 IRFP232 IRFP323 n4001 IRFP242
    Text: - l À È f g gj £ 4t Vd s or € % Vd g % V Vg s (V) W. (Ta=25*C) Id Pd * /CH * /CH (A) (W) Ig s s Vg s th) Id s s min (nA) Vg s (V) <M) Vd s (V) (V) W Id (nA) ¡fê Ds(on) Vd s = Vg s max (V) m fë Io(on) g fs Ciss Coss Crss (*typ) (max) (pF) (*typ) (max)


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    PDF IRFP232 1RFP233 1RFP240 IRFP241 IRFP242 IRFP243 1RFP330 IRFP331 1RFP332 IRFP333 IRFP310 T03P irfp250 irfp320 IRFP323 n4001

    irfp321

    Abstract: IRFP320 IRFP323 IRFP322 mosfet p.321 samsung tv
    Text: "OT^JT-" 7964 142 SAMSUNG SEMI CONDUCTOR. .INC 98D 05189 D e | TlbMlMS DOOSlflT S I N-CHANNEL POWER MOSFETS •' IRFP320/321/322/323 FEATURES • LowRDS{on • • • • • • • Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure


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    PDF IRFP320/321/322/323 IRFP320 IRFP321 IRFP322 IRFP323 00GS435 irfp321 mosfet p.321 samsung tv

    irf3203

    Abstract: irf3203 MOSFET IRFP320-3 IRFP3203 irfp321 irf320 F321 IRF N-Channel Power MOSFETs jys 33 ST E 722
    Text: IRF720/721/722/723 IRFP320/321/322/323 IRF320/321/322/323 N’CHANNEL POWER MOSFETS FEATURES • Lower R ds on • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area


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    PDF IRF720/721/722/723 IRFP320/321/322/323 IRF320/321/322/323 IRF720/IRFP320/IRF320 IRF721 /IRFP321 /IRF321 IRF/22/IH FP322/IRF322 IRF723/IRFP323/IRF323 irf3203 irf3203 MOSFET IRFP320-3 IRFP3203 irfp321 irf320 F321 IRF N-Channel Power MOSFETs jys 33 ST E 722