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    IRFIBF30G Search Results

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    IRFIBF30G Price and Stock

    Vishay Siliconix IRFIBF30GPBF

    MOSFET N-CH 900V 1.9A TO220-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFIBF30GPBF Tube 888 1
    • 1 $4.58
    • 10 $4.58
    • 100 $4.58
    • 1000 $1.64698
    • 10000 $1.625
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    ComSIT USA IRFIBF30GPBF 150
    • 1 -
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    Vishay Siliconix IRFIBF30G

    MOSFET N-CH 900V 1.9A TO220-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFIBF30G Tube 1,000
    • 1 -
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    • 100 -
    • 1000 $3.8625
    • 10000 $3.8625
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    Quest Components IRFIBF30G 675
    • 1 $5.13
    • 10 $5.13
    • 100 $3.1635
    • 1000 $2.8215
    • 10000 $2.8215
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    Vishay Intertechnologies IRFIBF30GPBF

    MOSFET N-CHANNEL 900V - Tape and Reel (Alt: IRFIBF30GPBF)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas IRFIBF30GPBF Reel 13 Weeks 1,000
    • 1 -
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    • 100 -
    • 1000 $1.625
    • 10000 $1.52941
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    Mouser Electronics IRFIBF30GPBF 1,395
    • 1 $3.79
    • 10 $2.79
    • 100 $1.95
    • 1000 $1.66
    • 10000 $1.62
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    Newark IRFIBF30GPBF Bulk 1,000
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    RS IRFIBF30GPBF Bulk 1,000
    • 1 -
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    • 1000 $2.07
    • 10000 $1.97
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    TTI IRFIBF30GPBF Tube 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.69
    • 10000 $1.63
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    TME IRFIBF30GPBF 1
    • 1 $1.48
    • 10 $1.18
    • 100 $1.06
    • 1000 $0.99
    • 10000 $0.99
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    Avnet Asia IRFIBF30GPBF 15 Weeks 1,000
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    EBV Elektronik IRFIBF30GPBF 750 14 Weeks 50
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    New Advantage Corporation IRFIBF30GPBF 600 1
    • 1 -
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    • 100 -
    • 1000 $1.16
    • 10000 $1.16
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    International Rectifier IRFIBF30G

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics IRFIBF30G 14
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    Quest Components IRFIBF30G 342
    • 1 $5.13
    • 10 $5.13
    • 100 $2.223
    • 1000 $2.052
    • 10000 $2.052
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    IRFIBF30G 66
    • 1 $6.84
    • 10 $6.84
    • 100 $4.218
    • 1000 $4.218
    • 10000 $4.218
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    IRFIBF30G 40
    • 1 $6.156
    • 10 $4.5144
    • 100 $4.104
    • 1000 $4.104
    • 10000 $4.104
    		Buy Now

    IRFIBF30G Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFIBF30G International Rectifier 900V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package Original PDF
    IRFIBF30G Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRFIBF30G Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 900V 1.9A TO220FP Original PDF
    IRFIBF30G International Rectifier HEXFET Power Mosfet Scan PDF
    IRFIBF30G International Rectifier HEXFET Power MOSFET Scan PDF
    IRFIBF30G Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFIBF30G Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRFIBF30GPBF International Rectifier 900V Single N-Channel Lead-Free HEXFET Power MOSFET in a TO-220 FullPak package Original PDF
    IRFIBF30GPBF Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 900V 1.9A TO220FP Original PDF

    IRFIBF30G Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: PD - 94874 IRFIBF30GPbF • Lead-Free 12/9/03 Document Number: 91186 www.vishay.com 1 IRFIBF30GPbF Document Number: 91186 www.vishay.com 2 IRFIBF30GPbF Document Number: 91186 www.vishay.com 3 IRFIBF30GPbF Document Number: 91186 www.vishay.com 4 IRFIBF30GPbF


    Original     		PDF IRFIBF30GPbF O-220 08-Mar-07

    IRFIBF30GPBF

    Abstract: IRFIBF30G SiHFIBF30G SiHFIBF30G-E3
    Text: IRFIBF30G, SiHFIBF30G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package 900 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 78 Qgs (nC) 10 Qgd (nC) 42 Configuration • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) 3.7 • Sink to Lead Creepage Distance = 4.8 mm


    Original     		PDF IRFIBF30G, SiHFIBF30G O-220 18-Jul-08 IRFIBF30GPBF IRFIBF30G SiHFIBF30G-E3

    Untitled

    Abstract: No abstract text available
    Text: IRFIBF30G, SiHFIBF30G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package 900 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 78 Qgs (nC) 10 Qgd (nC) 42 Configuration • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) 3.7 • Sink to Lead Creepage Distance = 4.8 mm


    Original     		PDF IRFIBF30G, SiHFIBF30G O-220 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: IRFIBF30G, SiHFIBF30G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package 900 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 78 Qgs (nC) 10 Qgd (nC) 42 Configuration • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) 3.7 • Sink to Lead Creepage Distance = 4.8 mm


    Original     		PDF IRFIBF30G, SiHFIBF30G O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: IRFIBF30G, SiHFIBF30G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package 900 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 78 Qgs (nC) 10 Qgd (nC) 42 Configuration • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) 3.7 • Sink to Lead Creepage Distance = 4.8 mm


    Original     		PDF IRFIBF30G, SiHFIBF30G O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: PD - 94874 IRFIBF30GPbF • Lead-Free 1 IRFIBF30GPbF 2 IRFIBF30GPbF TO-220 Full-Pak Package Outline Dimensions are shown in millimeters inches TO-220 Full-Pak Part Marking Information E X AM P L E : T H IS IS AN IR F I8 4 0 G W IT H AS S E M B L Y L O T CO D E 3 4 3 2


    Original     		PDF IRFIBF30GPbF O-220

    Untitled

    Abstract: No abstract text available
    Text: IRFIBF30G, SiHFIBF30G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package 900 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 78 Qgs (nC) 10 Qgd (nC) 42 Configuration • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) 3.7 • Sink to Lead Creepage Distance = 4.8 mm


    Original     		PDF IRFIBF30G, SiHFIBF30G O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: PD - 94874 IRFIBF30GPbF • Lead-Free www.irf.com 1 12/9/03 IRFIBF30GPbF 2 www.irf.com IRFIBF30GPbF www.irf.com 3 IRFIBF30GPbF 4 www.irf.com IRFIBF30GPbF www.irf.com 5 IRFIBF30GPbF 6 www.irf.com IRFIBF30GPbF TO-220 Full-Pak Package Outline Dimensions are shown in millimeters inches


    Original     		PDF IRFIBF30GPbF O-220

    IRFIBF30GPBF

    Abstract: IRFIBF30G SiHFIBF30G SiHFIBF30G-E3
    Text: IRFIBF30G, SiHFIBF30G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package 900 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 78 Qgs (nC) 10 Qgd (nC) 42 Configuration • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) 3.7 • Sink to Lead Creepage Distance = 4.8 mm


    Original     		PDF IRFIBF30G, SiHFIBF30G O-220 18-Jul-08 IRFIBF30GPBF IRFIBF30G SiHFIBF30G-E3

    Untitled

    Abstract: No abstract text available
    Text: IRFIBF30G_RC, SiHFIBF30G_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		PDF IRFIBF30G SiHFIBF30G AN609, 31-May-10

    Untitled

    Abstract: No abstract text available
    Text: PD - 94874 IRFIBF30GPbF • Lead-Free www.irf.com 1 12/9/03 IRFIBF30GPbF 2 www.irf.com IRFIBF30GPbF www.irf.com 3 IRFIBF30GPbF 4 www.irf.com IRFIBF30GPbF www.irf.com 5 IRFIBF30GPbF 6 www.irf.com IRFIBF30GPbF TO-220 Full-Pak Package Outline Dimensions are shown in millimeters inches


    Original     		PDF IRFIBF30GPbF O-220

    IRFIBF30G

    Abstract: No abstract text available
    Text: IRFIBF30G, SiHFIBF30G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package 900 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 78 Qgs (nC) 10 Qgd (nC) 42 Configuration • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) 3.7 • Sink to Lead Creepage Distance = 4.8 mm


    Original     		PDF IRFIBF30G, SiHFIBF30G O-220 12-Mar-07 IRFIBF30G

    91186

    Abstract: No abstract text available
    Text: PD - 94874 IRFIBF30GPbF • Lead-Free 12/9/03 Document Number: 91186 www.vishay.com 1 IRFIBF30GPbF Document Number: 91186 www.vishay.com 2 IRFIBF30GPbF Document Number: 91186 www.vishay.com 3 IRFIBF30GPbF Document Number: 91186 www.vishay.com 4 IRFIBF30GPbF


    Original     		PDF IRFIBF30GPbF O-220 12-Mar-07 91186

    sumida 94V-0

    Abstract: inverter using irfz44n MOSFET IRF9430 IRF7414 irfp460 dc welding circuit diagram IRFP264 inverter circuits IRFP450 inverter Three phase inverter using irfp450 mosfet Diagram Sumida ul94v-0 inverter IRF 544 N MOSFET
    Text: International Rectifier The IGBT SIP & HEXPak Navigator Effective 8 September, EXISTING Products NEW Products UPCOMING Products POTENTIAL Products released to production in last 6-9 months to be released within next 3-4 months no current plans. see bus.mgmt.


    Original     		PDF IRFK2D054 IRFK2F054 CPV362M4U CPV363M4U CPV364M4U CPV362M4F CPV363M4F CPV364M4F CPV362M4K CPV363M4K sumida 94V-0 inverter using irfz44n MOSFET IRF9430 IRF7414 irfp460 dc welding circuit diagram IRFP264 inverter circuits IRFP450 inverter Three phase inverter using irfp450 mosfet Diagram Sumida ul94v-0 inverter IRF 544 N MOSFET

    IRF470

    Abstract: IRFP240R IRF840CF IRF449 IRF340A irf520 power IRF341R IRFP20 irf460 to-247 IRF331R
    Text: STI Type: IRF331 Notes: Breakdown Voltage: 350 Continuous Current: 5.5 RDS on Ohm: 1.0 Trans Conductance Mhos: 3.0 Trans Conductance A: 3.0 Gate Threshold min: 2.0 Gate Threshold max: 4.0 Resistance Switching ton: 30 Resistance Switching toff: 55 Resistance Switching ID: 3.0


    Original     		PDF IRF331 O-204AA/TO-3 IRF332 2N6012 O-247 IRFP352R IRFP353R IRF470 IRFP240R IRF840CF IRF449 IRF340A irf520 power IRF341R IRFP20 irf460 to-247 IRF331R

    irf510 switch

    Abstract: IRFBA40N60C 800v irf IRL2505 IRF634L IRF540NL IRF520N IRFU9024N IRFU3910 IRL3215
    Text: International Rectifier The HEXFET Through Hole Navigator COLOR CODING: EXISTING Products NEW Products released to production in last 6-9 months UPCOMING Products to be released within next 3-4 months POTENTIAL Products no current plans. see bus.mgmt.


    Original     		PDF O-262 O-220 IRL3302 IRL3202 IRL3102 IRL3402 IRL3502 Super220TM O-247 irf510 switch IRFBA40N60C 800v irf IRL2505 IRF634L IRF540NL IRF520N IRFU9024N IRFU3910 IRL3215

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


    Original     		PDF GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original     		PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


    Original     		PDF AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696

    IRU1239SC

    Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
    Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK


    Original     		PDF 100MT160PAPBF 100MT160PA 100MT160PBPBF IRU1239SC iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter

    IRFZ44G

    Abstract: IRF840G IRFZ34G IRFBC30G IRF9540G IRF640G IRFBC40G IRFP140 equivalent transistor 9721 transistor IRFP140N
    Text: Quarterly Reliability Report for HEXFET Assembly IRGB Number 8 January 1999 Prepared by QA Services Page 1 of 60 Contents Prepared by QA Services 1 Introduction 2 Reliability Information 3 Environmental Test Results 4 Environmental Test Conditions/Schematics


    Original     		PDF IRFIZ34N IRFIZ44N IRFIZ48N IRFI1010N IRFI520N IRFI530N IRFI1310N IRLI3705N IRLIZ24N IRLIZ44N IRFZ44G IRF840G IRFZ34G IRFBC30G IRF9540G IRF640G IRFBC40G IRFP140 equivalent transistor 9721 transistor IRFP140N

    rectifier ds3

    Abstract: No abstract text available
    Text: International m 4flSS4S2 0015274 344 —inr pd-9.856 lk»riRectifier IRFIBF30G H EX FET P o w e r M O S F E T • • • • • IN T E R N A T IONAL Isolated Package High Voltage lsolation= 2.5KV R M S Sink to Lead Creepage Dist.= 4.8mm Dynam ic dv/dt Rating


    OCR Scan     		PDF IRFIBF30G O-220 rectifier ds3

    IRFIBF30G

    Abstract: No abstract text available
    Text: PD-9.856 International i«k Rectifier IRFIBF30G HEXFET Power M OSFET • • • • • Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Dynamic dv/dt Rating Low Thermal Resistance D VDSS = \ 900V R DS on = 3 -7 ß


    OCR Scan     		PDF IRFIBF30G O-220 IRFIBF30G