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Catalog Datasheet	MFG & Type	PDF	Document Tags
IRFIBF30GPBF Abstract: IRFIBF30G SiHFIBF30G SiHFIBF30G-E3 Text: IRFIBF30G, SiHFIBF30G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package 900 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 78 Qgs (nC) 10 Qgd (nC) 42 Configuration • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) 3.7 • Sink to Lead Creepage Distance = 4.8 mm	Original	PDF	IRFIBF30G, SiHFIBF30G O-220 18-Jul-08 IRFIBF30GPBF IRFIBF30G SiHFIBF30G-E3
Untitled Abstract: No abstract text available Text: IRFIBF30G, SiHFIBF30G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package 900 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 78 Qgs (nC) 10 Qgd (nC) 42 Configuration • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) 3.7 • Sink to Lead Creepage Distance = 4.8 mm	Original	PDF	IRFIBF30G, SiHFIBF30G O-220 11-Mar-11
Untitled Abstract: No abstract text available Text: IRFIBF30G, SiHFIBF30G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package 900 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 78 Qgs (nC) 10 Qgd (nC) 42 Configuration • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) 3.7 • Sink to Lead Creepage Distance = 4.8 mm	Original	PDF	IRFIBF30G, SiHFIBF30G O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
Untitled Abstract: No abstract text available Text: IRFIBF30G, SiHFIBF30G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package 900 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 78 Qgs (nC) 10 Qgd (nC) 42 Configuration • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) 3.7 • Sink to Lead Creepage Distance = 4.8 mm	Original	PDF	IRFIBF30G, SiHFIBF30G O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
Untitled Abstract: No abstract text available Text: IRFIBF30G, SiHFIBF30G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package 900 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 78 Qgs (nC) 10 Qgd (nC) 42 Configuration • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) 3.7 • Sink to Lead Creepage Distance = 4.8 mm	Original	PDF	IRFIBF30G, SiHFIBF30G O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
IRFIBF30GPBF Abstract: IRFIBF30G SiHFIBF30G SiHFIBF30G-E3 Text: IRFIBF30G, SiHFIBF30G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package 900 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 78 Qgs (nC) 10 Qgd (nC) 42 Configuration • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) 3.7 • Sink to Lead Creepage Distance = 4.8 mm	Original	PDF	IRFIBF30G, SiHFIBF30G O-220 18-Jul-08 IRFIBF30GPBF IRFIBF30G SiHFIBF30G-E3
Untitled Abstract: No abstract text available Text: IRFIBF30G_RC, SiHFIBF30G_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter	Original	PDF	IRFIBF30G SiHFIBF30G AN609, 31-May-10
IRFIBF30G Abstract: No abstract text available Text: IRFIBF30G, SiHFIBF30G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package 900 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 78 Qgs (nC) 10 Qgd (nC) 42 Configuration • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) 3.7 • Sink to Lead Creepage Distance = 4.8 mm	Original	PDF	IRFIBF30G, SiHFIBF30G O-220 12-Mar-07 IRFIBF30G