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    IRFD113 TRANSISTOR Search Results

    IRFD113 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    IRFD113 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    diode c 2479

    Abstract: No abstract text available
    Text: IRFD113, SiHFD113 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • For Automatic Insertion 60 RDS(on) (Ω) VGS = 10 V • Compact Plastic Package 0.8 Qg (Max.) (nC) 7 • End Stackable Qgs (nC) 2 • Fast Switching Qgd (nC)


    Original     		PDF IRFD113, SiHFD113 2002/95/EC 11-Mar-11 diode c 2479

    Untitled

    Abstract: No abstract text available
    Text: IRFD113, SiHFD113 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • For Automatic Insertion 60 RDS(on) (Ω) VGS = 10 V • Compact Plastic Package 0.8 Qg (Max.) (nC) 7 • End Stackable Qgs (nC) 2 • Fast Switching Qgd (nC)


    Original     		PDF IRFD113, SiHFD113 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    IRFD110

    Abstract: IRFD113 HARRIS IRFD110 IRFD111 IRFD112 TA17441 TB334 IRFD110 91
    Text: IRFD110, IRFD111, IRFD112, IRFD113 Semiconductor 1A and 0.8A, 80V and 100V, 0.6 and 0.8 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 1A and 0.8A, 80V and 100V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    Original     		PDF IRFD110, IRFD111, IRFD112, IRFD113 IRFD110 IRFD113 HARRIS IRFD110 IRFD111 IRFD112 TA17441 TB334 IRFD110 91

    Untitled

    Abstract: No abstract text available
    Text: IRFD113, SiHFD113 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • For Automatic Insertion 60 RDS(on) (Ω) VGS = 10 V • Compact Plastic Package 0.8 Qg (Max.) (nC) 7 • End Stackable Qgs (nC) 2 • Fast Switching Qgd (nC)


    Original     		PDF IRFD113, SiHFD113 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    irfd113p

    Abstract: No abstract text available
    Text: IRFD113, SiHFD113 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • For Automatic Insertion 60 RDS(on) (Ω) VGS = 10 V • Compact Plastic Package 0.8 Qg (Max.) (nC) 7 • End Stackable Qgs (nC) 2 • Fast Switching Qgd (nC)


    Original     		PDF IRFD113, SiHFD113 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 irfd113p

    MR918

    Abstract: MTP12N10 two transistor flyback mje16 IRFD113 MJE16106 mtp25n06 AM503 MJE210 MPF930
    Text: MOTOROLA Order this document by MJE16106/D SEMICONDUCTOR TECHNICAL DATA Designer's MJE16106  Data Sheet NPN Silicon Power Transistor Switchmode Bridge Series . . . specifically designed for use in half bridge and full bridge off line converters. • •


    Original     		PDF MJE16106/D MJE16106 MJE16106/D* MR918 MTP12N10 two transistor flyback mje16 IRFD113 MJE16106 mtp25n06 AM503 MJE210 MPF930

    MJ16110

    Abstract: MJW16110 IRFD9120 mtp25n06 MJE210 MTP12N10 MTP8P10 MUR105 MUR870
    Text: ON Semiconductort MJ16110 * MJW16110 * NPN Silicon Power Transistors SWITCHMODEt Bridge Series *Not Recommended for New Design . . . specifically designed for use in half bridge and full bridge off line converters. • • • • • • • • POWER TRANSISTORS


    Original     		PDF MJ16110 MJW16110 r14525 MJ16110/D MJ16110 MJW16110 IRFD9120 mtp25n06 MJE210 MTP12N10 MTP8P10 MUR105 MUR870

    MTP12N10 pin configuration

    Abstract: IRFD9123 MJ16110 IRFD113 equivalent MTP25N06 pk98 MJW16110 MTP12N10 mur47 MJ16010 DATASHEET
    Text: MOTOROLA Order this document by MJ16110/D SEMICONDUCTOR TECHNICAL DATA Designer's MJ16110* MJW16110 *  Data Sheet NPN Silicon Power Transistors *Motorola Preferred Device SWITCHMODE Bridge Series . . . specifically designed for use in half bridge and full bridge off line converters.


    Original     		PDF MJ16110/D MJ16110* MJW16110 MJ16110/D* MTP12N10 pin configuration IRFD9123 MJ16110 IRFD113 equivalent MTP25N06 pk98 MJW16110 MTP12N10 mur47 MJ16010 DATASHEET

    uln20004a

    Abstract: schematic diagram dc inverter 1000W SCHEMATIC 1000w inverter FLUKE 80k-40 probe uln20004 67F085 hv 1000 inverter schematic diagram 1000W switching mode inverter schematic diagram SCHEMATIC 1000w power amp 80K-40
    Text: THIS DOCUMENT CONSISTS OF THE FOLLOWING SHEETS AT THE REVISIONS SHOWN SHEET REVISION 1A DOC REV A B C D Section 1 A B C D Section 2 A B C D Section 3 A B C D Section 4 A B C D Section 5 A B C D Section 6 A B C D APPROVAL SIGNATURES SA SA SA WJW WJW WJW BAW


    Original     		PDF CD40106BE ULN20004A MC7815UC LM339N LM324N MC1458P1 1N914 MUR3060PT 2N2907 IRFD113 uln20004a schematic diagram dc inverter 1000W SCHEMATIC 1000w inverter FLUKE 80k-40 probe uln20004 67F085 hv 1000 inverter schematic diagram 1000W switching mode inverter schematic diagram SCHEMATIC 1000w power amp 80K-40

    cp4071

    Abstract: data sheet IC 7408 2N4891 IC 7408 MDA970A2 MDA2500 1854-0071 MDA2502 2N4342 IC TTL 7400
    Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154


    Original     		PDF 68B09 SN74ALS04BN SN74ALS08N SN74ALS00AN CA3046 uA733 LM311P LM318 CA3094 78H05 cp4071 data sheet IC 7408 2N4891 IC 7408 MDA970A2 MDA2500 1854-0071 MDA2502 2N4342 IC TTL 7400

    2N16

    Abstract: BC237 BCY72
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF1P02ELT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.


    Original     		PDF MGSF1P02ELT1 L218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 2N16 BC237 BCY72

    2n2222 h 331 transistors

    Abstract: 2n2222 -331 transistors 2n2222 331 transistors BC237 2n2222 h 331 MARKING CODE diode sod123 W1
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF3442XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors  Part of the GreenLine Portfolio of devices with energy– conserving traits.


    Original     		PDF MGSF3442XT1 T218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 2n2222 h 331 transistors 2n2222 -331 transistors 2n2222 331 transistors BC237 2n2222 h 331 MARKING CODE diode sod123 W1

    BC237

    Abstract: MARKING CODE diode sod123 W1 K 2056 transistor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF3455XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors  Part of the GreenLine Portfolio of devices with energy– conserving traits.


    Original     		PDF MGSF3455XT1 T218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 MARKING CODE diode sod123 W1 K 2056 transistor

    IRFD110

    Abstract: IRFD113 IRF0110 c 3209 IRFD111 IRFD112
    Text: - Standard Power MOSFETs File Number IRFD110, IRFD111, IRFD112, IRFD113 2314 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors


    OCR Scan     		PDF IRFD110, IRFD111, IRFD112, IRFD113 IRFD113 IRFD110 IRF0110 c 3209 IRFD111 IRFD112

    irfd110

    Abstract: IRFD113 1RFD113
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IRFD110 IRFD113 TMOS Field Effect Transistor Dual In-Line Package N-Channel Enhancement Mode Ideal for Peripheral Control Applications Intermediate 1 Watt Power Capability Standard DIP Outline TM O S FET TR A N S IS TO R S


    OCR Scan     		PDF IRFD110 IRFD113 IRFD110 IRFD113 1RFD113 1RFD113

    Untitled

    Abstract: No abstract text available
    Text: W vys S IRFD110, IRFD111, IRFD112, IRFD113 S em icon du cto r y 7 1A and 0.8A, 80V and 100V, 0.6 and 0.8 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 1A and 0.8A, 80V and 100V • High Input Impedance These are N-Channel enhancement mode silicon gate


    OCR Scan     		PDF IRFD110, IRFD111, IRFD112, IRFD113

    IRFD110

    Abstract: irfd113 328h IRFD11Q k 3525 MOSFET S402 FD113 fd110 IRFD110/111/112/113
    Text: HE D | 4055452 QQOaBbfl S | Dgta Sheet N q p D.g 328H INTERNATIONAL R E C T IF IE R T-35-25 IN T E R N A T IO N A L R E C T IF IE R llO R l HEXFET TRANSISTORS IRFD11Q N-CHANNEL IRFD113 HEXDIP 1-WATT RATED POWER MOSFETs 4 PIN, DUAL-IN-LINE PLASTIC PACKAGE


    OCR Scan     		PDF T-35-25 IRFD11Q IRFD113 C-121 IRFD110, FD113 T-35-25 IRFD110 328h k 3525 MOSFET S402 fd110 IRFD110/111/112/113

    IRFD113

    Abstract: IRFD112 irfd113 transistor
    Text: Fünf RELD EFFECT POWER TRANSISTOR IRFD112,113 0.3 AMPERES 100, 60 VOLTS RDS ON = 0-8 n This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­ ness and reliability.


    OCR Scan     		PDF IRFD112 TA-26Â 25jiS 100/iS IRFD112 IRFD113 IRFD113 irfd113 transistor

    transistor 81L

    Abstract: NER 251 IRFD112 IRFD113
    Text: SOLID !g e s o l i » STATE 01E 18902 state D 7 "“ 3 3 -_ 2 5 3fl7S0fll DDlfllGa 5 ^ _l— ' IRFD112,113 FIELD EFFECT POWER TRANSISTOR 0.8 AMPERES 100, 60 VOLTS Rd S ON = 0.8 n This series of N-Channel Enhancem ent-m ode Power MOSFETs utilizes GE’s advanced Power DMOS technology


    OCR Scan     		PDF T-35-J5 IRFD112 TA-25Â irf0112 -irfd113 RDS10N| transistor 81L NER 251 IRFD113

    MPF89

    Abstract: MPF6659 2 watt fet MPF910 IRFD213 IRFD220 IRFD221 IRFD222 IRFD223 IRFD9110
    Text: FIELD-EFFECT TRANSISTORS continued TMOS Power MOSFETs (continued) rds (on) @ Package FET DIP P CH TYPES 1 WATT FET DIP N CH TYPES 1 WATT T0226AE N CH TYPES 1 WATT V q S (t/h) ( '0 >DSS V(BR)DSS >GSS C|ss Crss *on 'off pk (A) Min Max Max (V) Min (nA) Max


    OCR Scan     		PDF IRFD213 IRFD220 IRFD221 IRFD222 IRFD223 IRFD9120 IRFD9121 IRFD9210 IRFD9213 IRFD91103 MPF89 MPF6659 2 watt fet MPF910 IRFD9110

    Untitled

    Abstract: No abstract text available
    Text: • 43 022 71 O O S M CH O 77T ■ H A R R I HAS S I R F D 1 1 0 / 1 1 1 / 1 1 2 / 1 1 3 I R F D 1 1 0 R / 1 1 1 R / 1 1 2 R / 1 1 3 R N-Channel Power MOSFETs Avalanche Energy Rated* A u g u st 1991 Package Features 4-PJN DIP • 1A and 0.8 A , 8 0 V - 100V


    OCR Scan     		PDF IRFD110, IRFD111, IRFD112, IRFD113

    1RFD110

    Abstract: FD110 FD-111 diode of IRFD 110 IRFD 110 HARRIS IRFD110 irfd11 IRFD111
    Text: 3 H A R R IS IRFD110/111/112/113 IRFD110R/111R/112R/113R N -C hannel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package 4 -P IN D IP • 1A and 0.8A, 80V - 100V TOP VIEW • rDS on) = 0 .6 ÎÎ and 0 .8 fi • Single Pulse Avalanche Energy Rated*


    OCR Scan     		PDF IRFD110/111/112/113 IRFD110R/111R/112R/113R IRFD110, IRFD111, IRFD112, IRFD113 IRFD110R, IRFD111R, IRFD112R, IRFD113R 1RFD110 FD110 FD-111 diode of IRFD 110 IRFD 110 HARRIS IRFD110 irfd11 IRFD111

    MFE9200

    Abstract: BUZ84A BUZ90 equivalent IRF150 MOSFET AMP circuit BUZ35S MTP40N06M IRFZ22 mosfet 1RF620 MTM12N10L MTP25N10E
    Text: MOTOROLA SC XSTRS/R IM E F D | b3b?254 O O fl'ìB n 1 | Selection by Package by contacting a Motorola sale office In your area or by con­ tacting a Motorola Literature Distribution Center listed on the back cover. Order the disk by requesting DK101/D. The product listed in Tables t through 22 have been com­


    OCR Scan     		PDF DK101/D. O-22QI 0020-H MFE9200 BUZ84A BUZ90 equivalent IRF150 MOSFET AMP circuit BUZ35S MTP40N06M IRFZ22 mosfet 1RF620 MTM12N10L MTP25N10E

    1RFZ40

    Abstract: 1RF150 MTP25N10E mth7n50 Transistor MTP35N06E BUZ80a equivalent buz90 equivalent MTP40N06M MFE9200 MTH7N50
    Text: MOTOROLA SC X S T R S /R IME D | F b3b?2S4 Q O fl' iB n 1 | J l 9 / - 6 0 Selection by Package The product listed in Tables t through 22 have been com­ piled on an IBM or compatible personal computer disk for quick selection of product. This versatile disk may be obtained


    OCR Scan     		PDF DK101/D. 0020-frJ 1RFZ40 1RF150 MTP25N10E mth7n50 Transistor MTP35N06E BUZ80a equivalent buz90 equivalent MTP40N06M MFE9200 MTH7N50