IRFD113 TRANSISTOR Search Results

IRFD110

Abstract: IRFD113 IRF0110 c 3209 IRFD111 IRFD112
Contextual Info: - Standard Power MOSFETs File Number IRFD110, IRFD111, IRFD112, IRFD113 2314 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors

diode c 2479

Contextual Info: IRFD113, SiHFD113 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • For Automatic Insertion 60 RDS(on) (Ω) VGS = 10 V • Compact Plastic Package 0.8 Qg (Max.) (nC) 7 • End Stackable Qgs (nC) 2 • Fast Switching Qgd (nC)

irfd110

Abstract: fd110
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IRFD110 IRFD113 TMOS Field Effect Transistor Dual In-Line Package N-Channel Enhancement Mode TM O S FET TR A NSISTO R S FET DIP Ideal for Peripheral Control Applications Intermediate 1 Watt Power Capability Standard DIP Outline

irfd110

Abstract: IRFD113 1RFD113
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IRFD110 IRFD113 TMOS Field Effect Transistor Dual In-Line Package N-Channel Enhancement Mode Ideal for Peripheral Control Applications Intermediate 1 Watt Power Capability Standard DIP Outline TM O S FET TR A N S IS TO R S

Contextual Info: IRFD113, SiHFD113 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • For Automatic Insertion 60 RDS(on) (Ω) VGS = 10 V • Compact Plastic Package 0.8 Qg (Max.) (nC) 7 • End Stackable Qgs (nC) 2 • Fast Switching Qgd (nC)

IRFD110

Abstract: IRFD113 HARRIS IRFD110 IRFD111 IRFD112 TA17441 TB334 IRFD110 91
Contextual Info: IRFD110, IRFD111, IRFD112, IRFD113 Semiconductor 1A and 0.8A, 80V and 100V, 0.6 and 0.8 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 1A and 0.8A, 80V and 100V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

Contextual Info: IRFD113, SiHFD113 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • For Automatic Insertion 60 RDS(on) (Ω) VGS = 10 V • Compact Plastic Package 0.8 Qg (Max.) (nC) 7 • End Stackable Qgs (nC) 2 • Fast Switching Qgd (nC)

irfd113p

Contextual Info: IRFD113, SiHFD113 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • For Automatic Insertion 60 RDS(on) (Ω) VGS = 10 V • Compact Plastic Package 0.8 Qg (Max.) (nC) 7 • End Stackable Qgs (nC) 2 • Fast Switching Qgd (nC)

Contextual Info: W vys S IRFD110, IRFD111, IRFD112, IRFD113 S em icon du cto r y 7 1A and 0.8A, 80V and 100V, 0.6 and 0.8 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 1A and 0.8A, 80V and 100V • High Input Impedance These are N-Channel enhancement mode silicon gate

IRFD110

Abstract: irfd113 328h IRFD11Q k 3525 MOSFET S402 FD113 fd110 IRFD110/111/112/113
Contextual Info: HE D | 4055452 QQOaBbfl S | Dgta Sheet N q p D.g 328H INTERNATIONAL R E C T IF IE R T-35-25 IN T E R N A T IO N A L R E C T IF IE R llO R l HEXFET TRANSISTORS IRFD11Q N-CHANNEL IRFD113 HEXDIP 1-WATT RATED POWER MOSFETs 4 PIN, DUAL-IN-LINE PLASTIC PACKAGE

IRFD113

Abstract: IRFD112 irfd113 transistor
Contextual Info: Fünf RELD EFFECT POWER TRANSISTOR IRFD112,113 0.3 AMPERES 100, 60 VOLTS RDS ON = 0-8 n This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­ ness and reliability.

transistor 81L

Abstract: NER 251 IRFD112 IRFD113
Contextual Info: SOLID !g e s o l i » STATE 01E 18902 state D 7 "“ 3 3 -_ 2 5 3fl7S0fll DDlfllGa 5 ^ _l— ' IRFD112,113 FIELD EFFECT POWER TRANSISTOR 0.8 AMPERES 100, 60 VOLTS Rd S ON = 0.8 n This series of N-Channel Enhancem ent-m ode Power MOSFETs utilizes GE’s advanced Power DMOS technology

MPF89

Abstract: MPF6659 2 watt fet MPF910 IRFD213 IRFD220 IRFD221 IRFD222 IRFD223 IRFD9110
Contextual Info: FIELD-EFFECT TRANSISTORS continued TMOS Power MOSFETs (continued) rds (on) @ Package FET DIP P CH TYPES 1 WATT FET DIP N CH TYPES 1 WATT T0226AE N CH TYPES 1 WATT V q S (t/h) ( '0 >DSS V(BR)DSS >GSS C|ss Crss *on 'off pk (A) Min Max Max (V) Min (nA) Max

Contextual Info: • 43 022 71 O O S M CH O 77T ■ H A R R I HAS S I R F D 1 1 0 / 1 1 1 / 1 1 2 / 1 1 3 I R F D 1 1 0 R / 1 1 1 R / 1 1 2 R / 1 1 3 R N-Channel Power MOSFETs Avalanche Energy Rated* A u g u st 1991 Package Features 4-PJN DIP • 1A and 0.8 A , 8 0 V - 100V

MR918

Abstract: MTP12N10 two transistor flyback mje16 IRFD113 MJE16106 mtp25n06 AM503 MJE210 MPF930
Contextual Info: MOTOROLA Order this document by MJE16106/D SEMICONDUCTOR TECHNICAL DATA Designer's MJE16106  Data Sheet NPN Silicon Power Transistor Switchmode Bridge Series . . . specifically designed for use in half bridge and full bridge off line converters. • •

MJ16110

Abstract: MJW16110 IRFD9120 mtp25n06 MJE210 MTP12N10 MTP8P10 MUR105 MUR870
Contextual Info: ON Semiconductort MJ16110 * MJW16110 * NPN Silicon Power Transistors SWITCHMODEt Bridge Series *Not Recommended for New Design . . . specifically designed for use in half bridge and full bridge off line converters. • • • • • • • • POWER TRANSISTORS

MTP12N10 pin configuration

Abstract: IRFD9123 MJ16110 IRFD113 equivalent MTP25N06 pk98 MJW16110 MTP12N10 mur47 MJ16010 DATASHEET
Contextual Info: MOTOROLA Order this document by MJ16110/D SEMICONDUCTOR TECHNICAL DATA Designer's MJ16110* MJW16110 *  Data Sheet NPN Silicon Power Transistors *Motorola Preferred Device SWITCHMODE Bridge Series . . . specifically designed for use in half bridge and full bridge off line converters.

uln20004a

Abstract: schematic diagram dc inverter 1000W SCHEMATIC 1000w inverter FLUKE 80k-40 probe uln20004 67F085 hv 1000 inverter schematic diagram 1000W switching mode inverter schematic diagram SCHEMATIC 1000w power amp 80K-40
Contextual Info: THIS DOCUMENT CONSISTS OF THE FOLLOWING SHEETS AT THE REVISIONS SHOWN SHEET REVISION 1A DOC REV A B C D Section 1 A B C D Section 2 A B C D Section 3 A B C D Section 4 A B C D Section 5 A B C D Section 6 A B C D APPROVAL SIGNATURES SA SA SA WJW WJW WJW BAW

cp4071

Abstract: data sheet IC 7408 2N4891 IC 7408 MDA970A2 MDA2500 1854-0071 MDA2502 2N4342 IC TTL 7400
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154

MFE9200

Abstract: BUZ84A BUZ90 equivalent IRF150 MOSFET AMP circuit BUZ35S MTP40N06M IRFZ22 mosfet 1RF620 MTM12N10L MTP25N10E
Contextual Info: MOTOROLA SC XSTRS/R IM E F D | b3b?254 O O fl'ìB n 1 | Selection by Package by contacting a Motorola sale office In your area or by con­ tacting a Motorola Literature Distribution Center listed on the back cover. Order the disk by requesting DK101/D. The product listed in Tables t through 22 have been com­

1RFZ40

Abstract: 1RF150 MTP25N10E mth7n50 Transistor MTP35N06E BUZ80a equivalent buz90 equivalent MTP40N06M MFE9200 MTH7N50
Contextual Info: MOTOROLA SC X S T R S /R IME D | F b3b?2S4 Q O fl' iB n 1 | J l 9 / - 6 0 Selection by Package The product listed in Tables t through 22 have been com­ piled on an IBM or compatible personal computer disk for quick selection of product. This versatile disk may be obtained

2N16

Abstract: BC237 BCY72
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF1P02ELT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.

2n2222 h 331 transistors

Abstract: 2n2222 -331 transistors 2n2222 331 transistors BC237 2n2222 h 331 MARKING CODE diode sod123 W1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF3442XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors  Part of the GreenLine Portfolio of devices with energy– conserving traits.

BC237

Abstract: MARKING CODE diode sod123 W1 K 2056 transistor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF3455XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors  Part of the GreenLine Portfolio of devices with energy– conserving traits.