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    IRFBF30 Search Results

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    IRFBF30 Price and Stock

    Vishay Siliconix IRFBF30STRLPBF

    MOSFET N-CH 900V 3.6A TO263
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFBF30STRLPBF Cut Tape 1,600 1
    • 1 $4.54
    • 10 $3.001
    • 100 $4.54
    • 1000 $4.54
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    IRFBF30STRLPBF Digi-Reel 1,600 1
    • 1 $4.54
    • 10 $3.001
    • 100 $4.54
    • 1000 $4.54
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    IRFBF30STRLPBF Reel 800 800
    • 1 -
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    • 1000 $1.66903
    • 10000 $1.60875
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    Vishay Siliconix IRFBF30PBF

    MOSFET N-CH 900V 3.6A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFBF30PBF Tube 658 1
    • 1 $3.57
    • 10 $3.57
    • 100 $3.57
    • 1000 $1.23153
    • 10000 $1.16125
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    ComSIT USA IRFBF30PBF 100
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    Vishay Siliconix IRFBF30

    MOSFET N-CH 900V 3.6A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFBF30 Tube
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    Vishay Siliconix IRFBF30L

    MOSFET N-CH 900V 3.6A I2PAK
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    DigiKey IRFBF30L Tube
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    Vishay Siliconix IRFBF30S

    MOSFET N-CH 900V 3.6A D2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFBF30S Tube 1,000
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    • 1000 $3.825
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    IRFBF30 Datasheets (18)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFBF30 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRFBF30 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 900V 3.6A TO-220AB Original PDF
    IRFBF30 International Rectifier HEXFET Power MOSFET Scan PDF
    IRFBF30 International Rectifier TO-220 HEXFET Power MOSFET Scan PDF
    IRFBF30 International Rectifier TO-220 Plastic Package HEXFETs Scan PDF
    IRFBF30 International Rectifier Power MOSFET(Vdss=900V, Rds(on)=3.7ohm, Id=3.6A) Scan PDF
    IRFBF30 International Rectifier Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, N-Channel, Power, 900V, 3.6A, Pkg Style TO-220AB Scan PDF
    IRFBF30 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRFBF30 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFBF30L Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 900V 3.6A TO-262 Original PDF
    IRFBF30PBF International Rectifier HEXFET Power MOSFET Original PDF
    IRFBF30PBF Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 900V 3.6A TO-220AB Original PDF
    IRFBF30PBF-BE3 Vishay Siliconix MOSFET N-CH 900V 3.6A TO220AB Original PDF
    IRFBF30S Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 900V 3.6A D2PAK Original PDF
    IRFBF30SPBF Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 900V 3.6A D2PAK Original PDF
    IRFBF30STRL Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 900V 3.6A D2PAK Original PDF
    IRFBF30STRLPBF Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 900V 3.6A D2PAK Original PDF
    IRFBF30STRR Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 900V 3.6A D2PAK Original PDF

    IRFBF30 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: PD - 95631 IRFBF30PbF • Lead-Free Document Number: 91122 8/4/04 www.vishay.com 1 IRFBF30PbF Document Number: 91122 www.vishay.com 2 IRFBF30PbF Document Number: 91122 www.vishay.com 3 IRFBF30PbF Document Number: 91122 www.vishay.com 4 IRFBF30PbF Document Number: 91122


    Original
    PDF IRFBF30PbF 12-Mar-07

    IRFBF30

    Abstract: SiHFBF30 SiHFBF30-E3
    Text: IRFBF30, SiHFBF30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 900 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 78 • Fast Switching Qgs (nC) 10 • Ease of Paralleling 42 • Simple Drive Requirements Qgd (nC)


    Original
    PDF IRFBF30, SiHFBF30 2002/95/EC O-220AB O-220AB 11-Mar-11 IRFBF30 SiHFBF30-E3

    Untitled

    Abstract: No abstract text available
    Text: IRFBF30, SiHFBF30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 900 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 78 • Fast Switching Qgs (nC) 10 • Ease of Paralleling 42 • Simple Drive Requirements Qgd (nC)


    Original
    PDF IRFBF30, SiHFBF30 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: IRFBF30, SiHFBF30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 900 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 78 • Fast Switching Qgs (nC) 10 • Ease of Paralleling 42 • Simple Drive Requirements Qgd (nC)


    Original
    PDF IRFBF30, SiHFBF30 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    irfbf30

    Abstract: SiHFBF30 SiHFBF30-E3
    Text: IRFBF30, SiHFBF30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 900 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 3.7 RoHS* Qg (Max.) (nC) 78 • Fast Switching Qgs (nC) 10 • Ease of Paralleling 42 • Simple Drive Requirements


    Original
    PDF IRFBF30, SiHFBF30 O-220 O-220 18-Jul-08 irfbf30 SiHFBF30-E3

    AN609

    Abstract: IRFBF30 SiHFBF30
    Text: IRFBF30_RC, SiHFBF30_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original
    PDF IRFBF30 SiHFBF30 AN609, 20-Apr-10 AN609

    Untitled

    Abstract: No abstract text available
    Text: IRFBF30, SiHFBF30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 900 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 78 • Fast Switching Qgs (nC) 10 • Ease of Paralleling 42 • Simple Drive Requirements Qgd (nC)


    Original
    PDF IRFBF30, SiHFBF30 2002/95/EC O-220AB O-220AB 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: IRFBF30, SiHFBF30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 900 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 3.7 RoHS* Qg (Max.) (nC) 78 • Fast Switching Qgs (nC) 10 • Ease of Paralleling 42 • Simple Drive Requirements


    Original
    PDF IRFBF30, SiHFBF30 O-220 O-220 12-Mar-07

    IRFBF30S

    Abstract: IRFBF30SPBF SiHFBF30S SiHFBF30S-E3
    Text: IRFBF30S, SiHFBF30S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 900 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 3.7 Qg (Max.) (nC) 78 • Fast Switching Qgs (nC) 10 • Ease of Paralleling Qgd (nC) 42


    Original
    PDF IRFBF30S, SiHFBF30S 2002/95/EC O-263) 18-Jul-08 IRFBF30S IRFBF30SPBF SiHFBF30S-E3

    mosfet 9452

    Abstract: SiHFBF30S AN609 IRFBF30S
    Text: IRFBF30S_RC, SiHFBF30S_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original
    PDF IRFBF30S SiHFBF30S AN609, 20-Apr-10 mosfet 9452 AN609

    Untitled

    Abstract: No abstract text available
    Text: IRFBF30, SiHFBF30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 900 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 78 • Fast Switching Qgs (nC) 10 • Ease of Paralleling 42 • Simple Drive Requirements Qgd (nC)


    Original
    PDF IRFBF30, SiHFBF30 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    IRFB

    Abstract: No abstract text available
    Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com CASE OUTLINE: TYPE: IRFBF30 TO-220AB HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:


    Original
    PDF O-220AB IRFBF30 IRFB

    SiHFBF30S

    Abstract: No abstract text available
    Text: IRFBF30S, SiHFBF30S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Drive Requirements


    Original
    PDF IRFBF30S, SiHFBF30S 2002/95/EC O-263) 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: IRFBF30, SiHFBF30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 900 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 78 • Fast Switching Qgs (nC) 10 • Ease of Paralleling 42 • Simple Drive Requirements Qgd (nC)


    Original
    PDF IRFBF30, SiHFBF30 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    SiHFBF30S

    Abstract: No abstract text available
    Text: IRFBF30S, SiHFBF30S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Drive Requirements


    Original
    PDF IRFBF30S, SiHFBF30S 2002/95/EC O-263) 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    IRFBF30

    Abstract: SiHFBF30 SiHFBF30-E3
    Text: IRFBF30, SiHFBF30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 900 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 3.7 RoHS* Qg (Max.) (nC) 78 • Fast Switching Qgs (nC) 10 • Ease of Paralleling 42 • Simple Drive Requirements


    Original
    PDF IRFBF30, SiHFBF30 O-220 O-220 18-Jul-08 IRFBF30 SiHFBF30-E3

    Untitled

    Abstract: No abstract text available
    Text: PD - 95631 IRFBF30PbF • Lead-Free Document Number: 91122 8/4/04 www.vishay.com 1 IRFBF30PbF Document Number: 91122 www.vishay.com 2 IRFBF30PbF Document Number: 91122 www.vishay.com 3 IRFBF30PbF Document Number: 91122 www.vishay.com 4 IRFBF30PbF Document Number: 91122


    Original
    PDF IRFBF30PbF 08-Mar-07

    SiHFBF30S

    Abstract: IRFBF30S SiHFBF30S-E3
    Text: IRFBF30S, SiHFBF30S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Drive Requirements


    Original
    PDF IRFBF30S, SiHFBF30S 2002/95/EC O-263) 11-Mar-11 IRFBF30S SiHFBF30S-E3

    Untitled

    Abstract: No abstract text available
    Text: IRFBF30S, SiHFBF30S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Drive Requirements


    Original
    PDF IRFBF30S, SiHFBF30S 2002/95/EC O-263) 11-Mar-11

    SiHFBF30S

    Abstract: No abstract text available
    Text: IRFBF30S, SiHFBF30S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Drive Requirements


    Original
    PDF IRFBF30S, SiHFBF30S 2002/95/EC O-263) 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: IRFBF30, SiHFBF30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 900 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 78 • Fast Switching Qgs (nC) 10 • Ease of Paralleling 42 • Simple Drive Requirements Qgd (nC)


    Original
    PDF IRFBF30, SiHFBF30 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    SiHFBF30S

    Abstract: No abstract text available
    Text: IRFBF30S, SiHFBF30S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Drive Requirements


    Original
    PDF IRFBF30S, SiHFBF30S 2002/95/EC O-263) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: International Rectifier i» • • • • • IRFBF30 r HEXFET Power MOSFET PD-9.616A M Ô 5 5 4 S E OOlM^fib 545 • INR INTERNATIONAL RECTIFIER Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements


    OCR Scan
    PDF IRFBF30 O-220 55MS5

    irfbf30

    Abstract: Diode IOR 10 dc
    Text: International S Rectifier PD-9.616A IRFBF30 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements V dss = 900V ^DS on = 3 -7 ^ lD = 3.6A Description DATA SHEETS


    OCR Scan
    PDF IRFBF30 O-220 T0-220 lrTtQIT13tà irfbf30 Diode IOR 10 dc