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    Infineon Technologies AG IRFB3207ZPBF

    MOSFET N-CH 75V 120A TO220AB
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    DigiKey IRFB3207ZPBF Tube 8,193 1
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    Newark IRFB3207ZPBF Bulk 408 1
    • 1 $3.79
    • 10 $2.02
    • 100 $1.96
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    Rochester Electronics IRFB3207ZPBF 3,136 1
    • 1 $1.34
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    TME IRFB3207ZPBF 34 1
    • 1 $2.37
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    Chip One Stop IRFB3207ZPBF Tube 1,500 0 Weeks, 1 Days 1
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    Vishay Siliconix IRFBE30PBF-BE3

    MOSFET N-CH 800V 4.1A TO220AB
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    DigiKey IRFBE30PBF-BE3 Tube 2,647 1
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    Vishay Siliconix IRFBG20PBF-BE3

    MOSFET N-CH 1000V 1.4A TO220AB
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    DigiKey IRFBG20PBF-BE3 Tube 1,472 1
    • 1 $1.86
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    • 100 $1.175
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    Vishay Siliconix IRFBC40PBF-BE3

    MOSFET N-CH 600V 6.2A TO220AB
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    DigiKey IRFBC40PBF-BE3 Tube 1,018 1
    • 1 $2.37
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    Infineon Technologies AG IRFB4229PBFXKMA1

    TRENCH >=100V
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    DigiKey IRFB4229PBFXKMA1 Tube 1,000 1
    • 1 $3.33
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    • 1000 $1.14021
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    Newark IRFB4229PBFXKMA1 Bulk 1,000 1
    • 1 $2.78
    • 10 $2.39
    • 100 $1.96
    • 1000 $1.64
    • 10000 $1.33
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    Find more IRFB price and stock on Findchips.com

    IRFB Datasheets (500)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFB11N50 International Rectifier Power MOSFET(Vdss=500V, Rds(on)max=0.52ohm, Id=11A) Original PDF
    IRFB11N50A International Rectifier HEXFET Power Mosfet Original PDF
    IRFB11N50A International Rectifier 500V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Original PDF
    IRFB11N50A Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 11A TO-220AB Original PDF
    IRFB11N50APBF International Rectifier 500V Single N-Channel Lead-Free HEXFET Power MOSFET in a TO-220AB package Original PDF
    IRFB11N50APBF Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 11A TO-220AB Original PDF
    IRFB11N50APBF-BE3 Vishay Siliconix MOSFET N-CH 500V 11A TO220AB Original PDF
    IRFB13N50A International Rectifier HEXFET Power Mosfet Original PDF
    IRFB13N50A Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 14A TO-220AB Original PDF
    IRFB13N50APBF International Rectifier 500V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Original PDF
    IRFB13N50APBF Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 14A TO-220AB Original PDF
    IRFB16N50K International Rectifier 500V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Original PDF
    IRFB16N50K International Rectifier 500V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Original PDF
    IRFB16N50K Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 17A TO-220AB Original PDF
    IRFB16N50KPBF Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 17A TO-220AB Original PDF
    IRFB16N60L International Rectifier SMPS MOSFET Original PDF
    IRFB16N60L International Rectifier SMPS MOSFET Original PDF
    IRFB16N60LPBF International Rectifier SMPS MOSFET Original PDF
    IRFB16N60LPBF Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 16A TO-220AB Original PDF
    IRFB17N20D International Rectifier 200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRFB17N20D with Standard Packaging Original PDF
    ...

    IRFB Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IRFB4510

    Abstract: IRFB4510G 0.192mH IRFB4310GPBF IRFB4510GPBF IRFB4310
    Text: PD - 97774 IRFB4510GPbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D G S VDSS RDS on typ. max. ID (Silicon Limited)


    Original     		IRFB4510GPbF O-220AB IRFB4510 IRFB4510G 0.192mH IRFB4310GPBF IRFB4510GPBF IRFB4310 PDF

    irfbe30

    Abstract: No abstract text available
    Text: IRFBE30, SiHFBE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 3.0 Qg (Max.) (nC) 78 • Fast Switching Qgs (nC) 9.6 • Ease of Paralleling 45 • Simple Drive Requirements


    Original     		IRFBE30, SiHFBE30 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 irfbe30 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFBC40AS, SiHFBC40AS Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness


    Original     		IRFBC40AS, SiHFBC40AS O-263) 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    IRFB9N65

    Abstract: No abstract text available
    Text: IRFB9N65A, SiHFB9N65A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 650 RDS(on) () VGS = 10 V 0.93 Qg (Max.) (nC) 48 Qgs (nC) 12 Qgd (nC) 19 Configuration • Improved Gate, Avalanche and Dynamic dV/dt


    Original     		IRFB9N65A, SiHFB9N65A 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRFB9N65 PDF

    MAR 740 MOSFET TRANSISTOR

    Abstract: D 1402
    Text: IRFBC40A, SiHFBC40A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 1.2 Qg (Max.) (nC) 42 Qgs (nC) 10 Qgd (nC) 20 Configuration • Improved Gate, Avalanche and Dynamic dV/dt


    Original     		IRFBC40A, SiHFBC40A 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12 MAR 740 MOSFET TRANSISTOR D 1402 PDF

    IRFBG30

    Abstract: SiHFBG30 SiHFBG30-E3
    Text: IRFBG30, SiHFBG30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 1000 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 80 • Fast Switching Qgs (nC) 10 • Ease of Paralleling 42 • Simple Drive Requirements Qgd (nC)


    Original     		IRFBG30, SiHFBG30 2002/95/EC O-220AB O-220AB 11-Mar-11 IRFBG30 SiHFBG30-E3 PDF

    high voltage gate drive transformer

    Abstract: No abstract text available
    Text: IRFB13N50A, SiHFB13N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Lower Gate Charge Qg Results in Simpler Drive Reqirements 500 RDS(on) () VGS = 10 V 0.450 Qg (Max.) (nC) 81 Qgs (nC) 20 Qgd (nC) COMPLIANT Ruggedness • Fully Characterized Capacitance and Avalanche Voltage


    Original     		IRFB13N50A, SiHFB13N50A 2002/95/EC O-220AB O-220AB IRFB13N50APbF SiHFB13N50A-E3 IRFB13N50A 2011/65/EU high voltage gate drive transformer PDF

    irfbe30

    Abstract: No abstract text available
    Text: IRFBE30, SiHFBE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 3.0 Qg (Max.) (nC) 78 • Fast Switching Qgs (nC) 9.6 • Ease of Paralleling 45 • Simple Drive Requirements


    Original     		IRFBE30, SiHFBE30 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 irfbe30 PDF

    IRFB4510

    Abstract: IRFB4510PBF
    Text: PD - 97772 IRFB4510PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D G S VDSS RDS on typ. max. ID (Silicon Limited)


    Original     		IRFB4510PbF O-220AB IRFB4510 IRFB4510PBF PDF

    MAR 740 MOSFET TRANSISTOR

    Abstract: P 648 H
    Text: IRFBC40A, SiHFBC40A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 1.2 Qg (Max.) (nC) 42 Qgs (nC) 10 Qgd (nC) 20 Configuration • Improved Gate, Avalanche and Dynamic dV/dt


    Original     		IRFBC40A, SiHFBC40A 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12 MAR 740 MOSFET TRANSISTOR P 648 H PDF

    IRFB4110GPBF

    Abstract: No abstract text available
    Text: PD - 96214 IRFB4110GPbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness


    Original     		IRFB4110GPbF O-220AB Y2A68UPS` O-220AB IRFB4110GPBF PDF

    IRFB4115G

    Abstract: IRFB4115GPBF 96216 ir 104a
    Text: PD - 96216 IRFB4115GPbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D G S VDSS RDS on typ. max. ID (Silicon Limited)


    Original     		IRFB4115GPbF O-220AB Y2A68UPS` O-220AB IRFB4115G IRFB4115GPBF 96216 ir 104a PDF

    P-Channel MOSFET 800v

    Abstract: 800v irf IRF P CHANNEL MOSFET IRF P CHANNEL MOSFET 100v IRFBE30L IRFBE30S IRL3103L P-Channel mosfet 400v P Channel Power MOSFET IRF ED marking code diode
    Text: PD - 95507 IRFBE30SPbF IRFBE30LPbF O O O O O O HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Lead-Free D VDSS = 800V RDS on = 3.0Ω G ID = 4.1A S Description Third Generation HEXFETs from International


    Original     		IRFBE30SPbF IRFBE30LPbF IRFBE30S O-262 IRFBE30L Dissi957) EIA-418. P-Channel MOSFET 800v 800v irf IRF P CHANNEL MOSFET IRF P CHANNEL MOSFET 100v IRFBE30L IRFBE30S IRL3103L P-Channel mosfet 400v P Channel Power MOSFET IRF ED marking code diode PDF

    94945

    Abstract: No abstract text available
    Text: PD - 94945 IRFBE30PbF • Lead-Free Document Number: 91118 1/15/04 www.vishay.com 1 IRFBE30PbF Document Number: 91118 www.vishay.com 2 IRFBE30PbF Document Number: 91118 www.vishay.com 3 IRFBE30PbF Document Number: 91118 www.vishay.com 4 IRFBE30PbF Document Number: 91118


    Original     		IRFBE30PbF O-220AB 12-Mar-07 94945 PDF

    diode BYY 62

    Abstract: MOSFET 800V 10A to 220 3l IRFBE20 BYY diode
    Text: PD-9.610A International S Rectifier IRFBE20 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements VDSS= 800V ^DS on = lD = 1.8A Description T h ird G e n e ra tio n H E X F E T s fro m Inte rn a tio n a l R ectifie r provid e th e d e sig n e r


    OCR Scan     		IRFBE20 O-220 diode BYY 62 MOSFET 800V 10A to 220 3l IRFBE20 BYY diode PDF

    IRFB61N15D

    Abstract: AN1001 IRF1010
    Text: PD- 94207 IRFB61N15D SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l Motor Control l Uninterrutible Power Supplies l VDSS 150V Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including


    Original     		IRFB61N15D AN1001) O-220AB IRFB61N15D AN1001 IRF1010 PDF

    IRFBC40A

    Abstract: No abstract text available
    Text: PD -91885A IRFBC40A SMPS MOSFET HEXFET Power MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic


    Original     		-91885A IRFBC40A O-220AB Factor10) IRFBC40A PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 95700 SMPS MOSFET IRFBC30APbF HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Lead-Free l Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic


    Original     		IRFBC30APbF O-220AB 08-Mar-07 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFBC30A, SiHFBC30A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 2.2 Qg (Max.) (nC) 23 Qgs (nC) 5.4 Qgd (nC) 11 Configuration Available • Improved Gate, Avalanche and Dynamic dV/dt RoHS*


    Original     		IRFBC30A, SiHFBC30A 2002/95/EC O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 94694 IRFBE30S IRFBE30L O O O O O HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements D VDSS = 800V RDS on = 3.0Ω G ID = 4.1A S Description Third Generation HEXFETs from International


    Original     		IRFBE30S IRFBE30L O-262 08-Mar-07 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFB9N65A, SiHFB9N65A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 650 RDS(on) () VGS = 10 V 0.93 Qg (Max.) (nC) 48 Qgs (nC) 12 Qgd (nC) 19 Configuration • Improved Gate, Avalanche and Dynamic dV/dt


    Original     		IRFB9N65A, SiHFB9N65A 2002/95/EC O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 94821 SMPS MOSFET IRFB9N60APbF HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS Uninterruptable Power Supply High speed power switching Lead-Free Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic


    Original     		IRFB9N60APbF O-220AB 08-Mar-07 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 95619 SMPS MOSFET IRFB16N50KPbF Applications l l l l l HEXFET Power MOSFET Switch Mode Power Supply SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits Lead-Free VDSS RDS(on) typ. 285m: 500V ID 17A


    Original     		IRFB16N50KPbF O-220AB 08-Mar-07 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 94986 SMPS MOSFET IRFBC40APbF HEXFET Power MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic


    Original     		IRFBC40APbF O-220AB 08-Mar-07 PDF