IRFBC40 TRANSISTOR Search Results

Contextual Info: IRFBC40 Semiconductor Data Sheet July 1999 6.2A, 600V, 1.200 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

irfbc40

Contextual Info: HE D I MÛ55452 GODÖLSG 1 | Data Sheet No. PD-9.506A INTERNATIONAL RE CT I F I E R INTERNATIONAL RECTIFIER IO R REPETITIVE AVALANCHE AND dv/dt RATED* HEXFET TRANSISTORS IRFBC40 IRFBC4S N-CHANNEL 600 Volt, 1.2 Ohm HEXFET TO-220AB Plastic Package Product Summary

IRFBc40

Abstract: transistor irfbc40 4A,600V IRFBC42 TB334 TA17426
Contextual Info: IRFBC40, IRFBC42 Semiconductor 6.2A and 5.4A, 600V, 1.2 and 1.6 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 6.2A and 5.4A, 600V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

IRFBC40 Transistor

Abstract: transistor irfbc40 irfbc40
Contextual Info: IRFBC40 Data Sheet Title FB 0 bt 2A, 0V, 00 m, July 1999 6.2A, 600V, 1.200 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

600V 2A MOSFET N-channel

Abstract: transistor irfbc40 IRFBC40 irfbc40 free download TB334
Contextual Info: IRFBC40 Data Sheet January 2002 6.2A, 600V, 1.200 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of

Simple test MOSFET Procedures

Abstract: IRFBC40 TB334
Contextual Info: IRFBC40 Data Sheet July 1999 6.2A, 600V, 1.200 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of

irfbc40

Contextual Info: IRFBC40, IRFBC42 fÇ j HARRIS S E M I C O N D U C T O R 6.2A and 5.4A, 600V, 1.2 and 1.6 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 6.2A and 5.4A, 600V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

Contextual Info: IRFBC40, IRFBC42 HARRIS S E M I C O N D U C T O R 6.2A and 5.4A, 600V, 1.2 and 1.6 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 6.2A and 5.4A, 600V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

irfbc40

Contextual Info: IRFBC40, IRFBC42 S E M I C O N D U C T O R 6.2A and 5.4A, 600V, 1.2 and 1.6 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 6.2A and 5.4A, 600V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

IR2112

Abstract: 5TO20V
Contextual Info: International 1@I]Rectifier Data Sheet No. PD-6.026C IR2112 HIGH AND LOW SIDE DRIVER Features Product Summary • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune ■ Gate drive supply range from 10 to 20V

ss 3977

Abstract: 600v plating phase rectifier diagram IRFBC40R ic ir2113
Contextual Info: International 1@I]Rectifier Data Sheet No. PD-6.030C IR2113 HIGH AND LOW SIDE DRIVER Features Product Summary • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune ■ Gate drive supply range from 10 to 20V

Contextual Info: HARRIS SEflICOND SECTOR bflE D • 430B271 Q0S10A5 T21 ■ £15 H A R R IS W PCFC40W 4QIP S E M I C O N D U C T O R N-Channel MOS Chip January 1993 Features • HAS Die Passivated • Contact Metallization - Gate and Source - Aluminum - Drain - Tri-Metal AI-TI-Ni

ir2110 circuit DIAGRAM

Contextual Info: International IQ R Rectifier DataSheelNo-PD-6011E IR 2 1 1 0 HIGH AND LOW SIDE DRIVER Features Product Summary • Floating channel designed for bootstrap operation Fully operational to + 500 V Tolerant to negative transient voltage dV/dt immune ■ G ate drive supply range from 10 to 20V

high frequency plating rectifier using IGBT

Contextual Info: Data Sheet No. PD -6.026C International IGR Rectifier IR2112 HIGH AND LOW SIDE DRIVER Features Product Summary • Floating channel designed for bootstrap operation Fully operational to +600V V o ffs e t 600V max. Tolerant to negative transient voltage dV/dt immune

IR2112

Contextual Info: Data Sheet No. PD60026I IR2112 HIGH AND LOW SIDE DRIVER Features Product Summary • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune · Gate drive supply range from 10 to 20V · Undervoltage lockout for both channels

IR2110-2

Abstract: IR2110 application note AN IR2110 IR2110 design IR2110 IR2110 IGBT DRIVER ir2110 circuit IR2110 gate driver for mosfet B-26 B-28
Contextual Info: Data Sheet No. PD-6.011E IR2110 HIGH AND LOW SIDE DRIVER Features Product Summary n Floating channel designed for bootstrap operation Fully operational to +500V Tolerant to negative transient voltage dV/dt immune n Gate drive supply range from 10 to 20V n Undervoltage lockout for both channels

IR2213

Abstract: IR2213S IRFBC20 IRFBC30 IRFBC40 IRFPE50 MP150 IR2213 DIE
Contextual Info: Back Preliminary Data Sheet No. PD60030I IR2213 HIGH AND LOW SIDE DRIVER Features Product Summary • Floating channel designed for bootstrap operation Fully operational to +1200V Tolerant to negative transient voltage dV/dt immune · Gate drive supply range from 12 to 20V

IR2113 APPLICATION NOTE

Abstract: circuit to ir2113 IR2113 IR2113 APPLICATION IR2113-1 IR2113-2 IR2113S MP150 AN IR2113S IGBT Designers Manual
Contextual Info: Previous Datasheet Index Next Data Sheet Data Sheet No. PD-6.030C IR2113 HIGH AND LOW SIDE DRIVER Features Product Summary n Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune n Gate drive supply range from 10 to 20V

IR2112 equivalent

Abstract: IR2112-2 IR2112 IR2112 circuit IR2112S IR2112-1 MP150 high current igbt IGBT Designers Manual
Contextual Info: Data Sheet No. PD-6.026C IR2112 HIGH AND LOW SIDE DRIVER Features Product Summary n Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune n Gate drive supply range from 10 to 20V n Undervoltage lockout for both channels

IR2110 application note

Abstract: mosfet b38 IR2110 design ir2110 CONNECTION IR2110-2 IR2110 IGBT Designers Manual ir2110 circuit DIAGRAM B-26 B-28
Contextual Info: Previous Datasheet Index Next Data Sheet Data Sheet No. PD-6.011E IR2110 HIGH AND LOW SIDE DRIVER Features Product Summary n Floating channel designed for bootstrap operation Fully operational to +500V Tolerant to negative transient voltage dV/dt immune n Gate drive supply range from 10 to 20V

Contextual Info: International IÖR Rectifier Data Sheet No. P D -6.01 1E IR2110 HIGH AND LOW SIDE DRIVER Features Product Summary • Floating channel designed for bootstrap operation Fully operational to + 500V Tolerant to negative transient voltage dV/dt immune ■ G ate drive supply range from 10 to 20V

IRFBC30I

Abstract: circuit to ir2113
Contextual Info: International IQ R Rectifier Data Sheet No. P D -6.030C IR2113 HIGH AND LOW SIDE DRIVER Features • Floating channel designed for bootstrap operation Fully operational to + 600 V Tolerant to negative transient voltage dV/dt immune ■ G ate drive supply range from 10 to 20V

IR2112 equivalent

Abstract: IR2112 IR2112-1 IR2112-2 IR2112S MP150 IGBT Designers Manual IR2112 circuit B52 transistor
Contextual Info: Previous Datasheet Index Next Data Sheet Data Sheet No. PD-6.026C IR2112 HIGH AND LOW SIDE DRIVER Features Product Summary n Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune n Gate drive supply range from 10 to 20V

IR2112 equivalent

Abstract: IR2112 IR2112-2 IR2112-1 IR2112S IRFBC20 IRFBC30 IRFBC40 MP150 transistor irfbc40
Contextual Info: Data Sheet No. PD-6.026-G IR2112 HIGH AND LOW SIDE DRIVER Features Product Summary • Floating channel designed for bootstrap operation • • • • • • • Fully operational to +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V