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    IRFBC Price and Stock

    Vishay Siliconix IRFBC30PBF

    MOSFET N-CH 600V 3.6A TO220AB
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    DigiKey IRFBC30PBF Tube 16,530 1
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    RS IRFBC30PBF Bulk 1,000
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    Bristol Electronics IRFBC30PBF 13
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    New Advantage Corporation IRFBC30PBF 650 1
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    Vishay Siliconix IRFBC20PBF

    MOSFET N-CH 600V 2.2A TO220AB
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    DigiKey IRFBC20PBF Tube 5,593 1
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    Quest Components IRFBC20PBF 3
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    New Advantage Corporation IRFBC20PBF 13,250 1
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    Vishay Siliconix IRFBC30ASPBF

    MOSFET N-CH 600V 3.6A D2PAK
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    DigiKey IRFBC30ASPBF Tube 2,169 1
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    ComSIT USA IRFBC30ASPBF 2,500
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    Vishay Siliconix IRFBC40PBF-BE3

    MOSFET N-CH 600V 6.2A TO220AB
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    DigiKey IRFBC40PBF-BE3 Tube 1,018 1
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    Vishay Siliconix IRFBC40APBF

    MOSFET N-CH 600V 6.2A TO220AB
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    DigiKey IRFBC40APBF Tube 973 1
    • 1 $2.47
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    RS IRFBC40APBF Bulk 6 1
    • 1 $2.21
    • 10 $2.1
    • 100 $1.88
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    Bristol Electronics IRFBC40APBF 82
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    New Advantage Corporation IRFBC40APBF 700 1
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    IRFBC Datasheets (176)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFBC10LC Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRFBC20 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRFBC20 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 2.2A TO-220AB Original PDF
    IRFBC20 International Rectifier Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=2.2A) Scan PDF
    IRFBC20 International Rectifier TO-220 HEXFET Power MOSFET Scan PDF
    IRFBC20 International Rectifier TO-220 Plastic Package HEXFETs Scan PDF
    IRFBC20 International Rectifier HEXFET Power MOSFET Scan PDF
    IRFBC20 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRFBC20 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFBC20L International Rectifier HEXFET Power MOSFET Original PDF
    IRFBC20L Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRFBC20L Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 2.2A TO-262 Original PDF
    IRFBC20L Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFBC20LPBF International Rectifier HEXFET Power MOSFET Original PDF
    IRFBC20LPBF Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 2.2A TO-262 Original PDF
    IRFBC20PBF Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 2.2A TO-220AB Original PDF
    IRFBC20PBF International Rectifier 600V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Scan PDF
    IRFBC20PBF-BE3 Vishay Siliconix MOSFET N-CH 600V 2.2A TO220AB Original PDF
    IRFBC20S International Rectifier HEXFET Power MOSFET Original PDF
    IRFBC20S Toshiba Power MOSFETs Cross Reference Guide Original PDF
    ...

    IRFBC Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFBC40AS, SiHFBC40AS Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness


    Original     		IRFBC40AS, SiHFBC40AS O-263) 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    MAR 740 MOSFET TRANSISTOR

    Abstract: D 1402
    Text: IRFBC40A, SiHFBC40A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 1.2 Qg (Max.) (nC) 42 Qgs (nC) 10 Qgd (nC) 20 Configuration • Improved Gate, Avalanche and Dynamic dV/dt


    Original     		IRFBC40A, SiHFBC40A 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12 MAR 740 MOSFET TRANSISTOR D 1402 PDF

    MAR 740 MOSFET TRANSISTOR

    Abstract: P 648 H
    Text: IRFBC40A, SiHFBC40A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 1.2 Qg (Max.) (nC) 42 Qgs (nC) 10 Qgd (nC) 20 Configuration • Improved Gate, Avalanche and Dynamic dV/dt


    Original     		IRFBC40A, SiHFBC40A 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12 MAR 740 MOSFET TRANSISTOR P 648 H PDF

    IRFBC40A

    Abstract: No abstract text available
    Text: PD -91885A IRFBC40A SMPS MOSFET HEXFET Power MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic


    Original     		-91885A IRFBC40A O-220AB Factor10) IRFBC40A PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 95700 SMPS MOSFET IRFBC30APbF HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Lead-Free l Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic


    Original     		IRFBC30APbF O-220AB 08-Mar-07 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFBC30A, SiHFBC30A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 2.2 Qg (Max.) (nC) 23 Qgs (nC) 5.4 Qgd (nC) 11 Configuration Available • Improved Gate, Avalanche and Dynamic dV/dt RoHS*


    Original     		IRFBC30A, SiHFBC30A 2002/95/EC O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 94986 SMPS MOSFET IRFBC40APbF HEXFET Power MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic


    Original     		IRFBC40APbF O-220AB 08-Mar-07 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFBC30, SiHFBC30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 600 RDS(on) (Ω) VGS = 10 V 2.2 Qg (Max.) (nC) 31 Qgs (nC) 4.6 Qgd (nC) 17 Configuration Single RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the


    Original     		IRFBC30, SiHFBC30 O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 94988 IRFBC40LCPbF • Lead-Free ww.irf.com Document Number: 91114 1 2/9/04 www.vishay.com 1 IRFBC40LCPbF Document Number: 91114 www.vishay.com 2 IRFBC40LCPbF Document Number: 91114 www.vishay.com 3 IRFBC40LCPbF Document Number: 91114 www.vishay.com 4


    Original     		IRFBC40LCPbF O-220AB 25ded PDF

    AN609

    Abstract: IRFBC40A SiHFBC40A 9043-2
    Text: IRFBC40A_RC, SiHFBC40A_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		IRFBC40A SiHFBC40A AN609, 20-Apr-10 AN609 9043-2 PDF

    74139m

    Abstract: 4139 temperature AN609 IRFBC30A SiHFBC30A 74139
    Text: IRFBC30A_RC, SiHFBC30A_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		IRFBC30A SiHFBC30A AN609, 20-Apr-10 74139m 4139 temperature AN609 74139 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 95544 IRFBC30S/LPbF • Lead-Free Document Number: 91111 7/21/04 www.vishay.com 1 IRFBC30S/LPbF Document Number: 91111 www.vishay.com 2 IRFBC30S/LPbF Document Number: 91111 www.vishay.com 3 IRFBC30S/LPbF Document Number: 91111 www.vishay.com 4 IRFBC30S/LPbF


    Original     		IRFBC30S/LPbF 08-Mar-07 PDF

    diode 251 36A

    Abstract: IRFBC30 IRFBC30F IOR 438 IRFBC30 150 E 482C a40v
    Text: PD-9.482C International irêRl Rectifier IRFBC30 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements V dss - 600V R DS on - 2 -2 ß lD = 3.6A Description T h ird G e n e ra tio n H E X F E T s fro m Inte rn a tio n a l R ectifie r p rovid e th e d e sig n e r


    OCR Scan     		IRFBC30 O-220 diode 251 36A IRFBC30 IRFBC30F IOR 438 IRFBC30 150 E 482C a40v PDF

    IRFBC30

    Abstract: IRFBC30I 442 rectifier
    Text: International HEl Rectifier I IRFBC30 I NTERNATIONAL HEXFET Power MOSFET • • • • • PD-9.482C 4Ô S 54 S 2 G 0 m T 5 b ÔDfi H I N R RECTIFIER bSE D Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements


    OCR Scan     		IRFBC30 O-220 T0-220 IRFBC30 IRFBC30I 442 rectifier PDF

    AL MARKING

    Abstract: l3103
    Text: PD - 95543 IRFBC20S/LPbF • Lead-Free www.irf.com 1 7/21/04 IRFBC20S/LPbF 2 www.irf.com IRFBC20S/LPbF www.irf.com 3 IRFBC20S/LPbF 4 www.irf.com IRFBC20S/LPbF www.irf.com 5 IRFBC20S/LPbF 6 www.irf.com IRFBC20S/LPbF www.irf.com 7 IRFBC20S/LPbF D2Pak Package Outline


    Original     		IRFBC20S/LPbF EIA-418. AL MARKING l3103 PDF

    irfbc40

    Abstract: No abstract text available
    Text: HE D I MÛ55452 GODÖLSG 1 | Data Sheet No. PD-9.506A INTERNATIONAL RE CT I F I E R INTERNATIONAL RECTIFIER IO R REPETITIVE AVALANCHE AND dv/dt RATED* HEXFET TRANSISTORS IRFBC40 IRFBC4S N-CHANNEL 600 Volt, 1.2 Ohm HEXFET TO-220AB Plastic Package Product Summary


    OCR Scan     		IRFBC40 O-220AB C-405 IRFBC40, IRFBC42 C-406 irfbc40 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFBC40 Semiconductor Data Sheet July 1999 6.2A, 600V, 1.200 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    OCR Scan     		IRFBC40 PDF

    IRFBC30

    Abstract: No abstract text available
    Text: IRFBC30, SiHFBC30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 600 RDS(on) (Ω) VGS = 10 V 2.2 Qg (Max.) (nC) 31 Qgs (nC) 4.6 Qgd (nC) 17 Configuration Single RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the


    Original     		IRFBC30, SiHFBC30 O-220AB O-220AB 11-Mar-11 IRFBC30 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD-91885A International IOR Rectifier SMPS MOSFET IRFBC40A HEXFET Power MOSFET A pplications • • • Switch Mode Power Supply SMPS Uninterruptable Power Supply High speed power switching V dss 600V Rds(on) max Id 1.2£2 6.2A B e n efits • Low Gate Charge Qg results in Simple


    OCR Scan     		PD-91885A IRFBC40A PDF

    YW 431

    Abstract: AN-994 IRFBC40A IRFBC40AS
    Text: PD- 91897A SMPS MOSFET IRFBC40AS HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic


    Original     		1897A IRFBC40AS YW 431 AN-994 IRFBC40A IRFBC40AS PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFBC30A, SiHFBC30A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 2.2 Qg (Max.) (nC) 23 Qgs (nC) 5.4 Qgd (nC) Ruggedness • Fully Characterized Capacitance and Avalanche Voltage


    Original     		IRFBC30A, SiHFBC30A O-220 O-220 IRFBC30APbF SiHFBC30Amerchantability 12-Mar-07 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFBC40AS, SiHFBC40AS Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness


    Original     		IRFBC40AS, SiHFBC40AS O-263) 2002/95/EC 11-Mar-11 PDF

    SiHFBC30L

    Abstract: No abstract text available
    Text: IRFBC30S, SiHFBC30S, IRFBC30L, SiHFBC30L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Surface Mount (IRFBC30S, SiHFBC30S) • Low-Profile Through-Hole (IRFBC30L, SiHFBC30L) • Available in Tape and Reel (IRFBC30S, SiHFBC30S) • Dynamic dV/dt Rating


    Original     		IRFBC30S, SiHFBC30S IRFBC30L, SiHFBC30L PDF

    SiHFBC30L

    Abstract: No abstract text available
    Text: IRFBC30S, SiHFBC30S, IRFBC30L, SiHFBC30L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount (IRFBC30S, SiHFBC30S) • Low-Profile Through-Hole (IRFBC30L, SiHFBC30L) • Available in Tape and Reel (IRFBC30S, SiHFBC30S)


    Original     		IRFBC30S, SiHFBC30S IRFBC30L, SiHFBC30L PDF