IRFBC30A Search Results
IRFBC30A Price and Stock
Vishay Siliconix IRFBC30ASPBFMOSFET N-CH 600V 3.6A D2PAK |
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IRFBC30ASPBF | Tube | 2,169 | 1 |
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IRFBC30ASPBF | 2,500 |
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Vishay Siliconix IRFBC30APBFMOSFET N-CH 600V 3.6A TO220AB |
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IRFBC30APBF | Tube | 902 | 1 |
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Vishay Siliconix IRFBC30AMOSFET N-CH 600V 3.6A TO220AB |
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IRFBC30A | Tube |
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Vishay Siliconix IRFBC30ASMOSFET N-CH 600V 3.6A D2PAK |
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IRFBC30AS | Tube | 1,000 |
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Vishay Siliconix IRFBC30ALMOSFET N-CH 600V 3.6A I2PAK |
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IRFBC30AL | Tube | 1,000 |
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IRFBC30A Datasheets (17)
| Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| IRFBC30A | International Rectifier | HEXFET Power Mosfet | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFBC30A | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 3.6A TO-220AB | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFBC30A | International Rectifier | Over 600 obsolete distributor catalogs now available on the Datasheet Archive - MOSFETs | Scan | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFBC30AL | International Rectifier | HEXFET Power Mosfet | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFBC30AL | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 3.6A TO-262 | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFBC30ALPBF | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 3.6A TO-262 | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFBC30APBF | International Rectifier | HEXFET Power MOSFET | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFBC30APBF | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 3.6A TO-220AB | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFBC30AS | International Rectifier | HEXFET Power Mosfet | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFBC30AS | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 3.6A D2PAK | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFBC30ASPBF | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 3.6A D2PAK | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFBC30ASTRL | International Rectifier | 600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFBC30ASTRL | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 3.6A D2PAK | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFBC30ASTRLPBF | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 3.6A D2PAK | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| IRFBC30ASTRR | International Rectifier | 600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFBC30ASTRR | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 3.6A D2PAK | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFBC30ASTRRPBF | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 3.6A D2PAK | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFBC30A Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: PD - 95700 SMPS MOSFET IRFBC30APbF HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Lead-Free l Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic |
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IRFBC30APbF O-220AB 08-Mar-07 | |
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Contextual Info: IRFBC30A, SiHFBC30A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 2.2 Qg (Max.) (nC) 23 Qgs (nC) 5.4 Qgd (nC) 11 Configuration Available • Improved Gate, Avalanche and Dynamic dV/dt RoHS* |
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IRFBC30A, SiHFBC30A 2002/95/EC O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
74139m
Abstract: 4139 temperature AN609 IRFBC30A SiHFBC30A 74139
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IRFBC30A SiHFBC30A AN609, 20-Apr-10 74139m 4139 temperature AN609 74139 | |
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Contextual Info: IRFBC30A, SiHFBC30A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 2.2 Qg (Max.) (nC) 23 Qgs (nC) 5.4 Qgd (nC) Ruggedness • Fully Characterized Capacitance and Avalanche Voltage |
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IRFBC30A, SiHFBC30A O-220 O-220 IRFBC30APbF SiHFBC30Amerchantability 12-Mar-07 | |
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Contextual Info: IRFBC30A, SiHFBC30A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 2.2 Qg (Max.) (nC) 23 Qgs (nC) 5.4 Qgd (nC) 11 Configuration Available • Improved Gate, Avalanche and Dynamic dV/dt RoHS* |
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IRFBC30A, SiHFBC30A 2002/95/EC O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
AN-994
Abstract: IRFBC30A
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91890B IRFBC30AS/L AN-994 IRFBC30A | |
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Contextual Info: IRFBC30A, SiHFBC30A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 2.2 Qg (Max.) (nC) 23 Qgs (nC) 5.4 Qgd (nC) 11 Configuration Available • Improved Gate, Avalanche and Dynamic dV/dt RoHS* |
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IRFBC30A, SiHFBC30A 2002/95/EC O-220AB 11-Mar-11 | |
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Contextual Info: IRFBC30AS, IRFBC30AL, SiHFBC30AS, SiHFBC30AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 2.2 Qg (Max.) (nC) 23 Qgs (nC) 5.4 Qgd (nC) 11 Configuration |
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IRFBC30AS, IRFBC30AL, SiHFBC30AS SiHFBC30AL O-262) O-263) 12-Mar-07 | |
IRFBC30AContextual Info: PD- 91889A IRFBC30A SMPS MOSFET HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic |
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1889A IRFBC30A O-220AB 12-Mar-07 IRFBC30A | |
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Contextual Info: PD- 95534 SMPS MOSFET IRFBC30AS/LPbF HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Lead-Free l Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic |
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IRFBC30AS/LPbF O-262 AN-994. IRFBC30A | |
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Contextual Info: IRFBC30A, SiHFBC30A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 2.2 Qg (Max.) (nC) 23 Qgs (nC) 5.4 Qgd (nC) 11 Configuration Available • Improved Gate, Avalanche and Dynamic dV/dt RoHS* |
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IRFBC30A, SiHFBC30A 2002/95/EC O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
005 418
Abstract: AN-994 IRFBC30A tc 90142
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91890B IRFBC30AS/L 12-Mar-07 005 418 AN-994 IRFBC30A tc 90142 | |
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Contextual Info: IRFBC30A, SiHFBC30A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 2.2 Qg (Max.) (nC) 23 Qgs (nC) 5.4 Qgd (nC) 11 Configuration Available • Improved Gate, Avalanche and Dynamic dV/dt RoHS* |
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IRFBC30A, SiHFBC30A 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
AN-994
Abstract: IRFBC30A
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91890B IRFBC30AS/L Derat2-7105 AN-994 IRFBC30A | |
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Contextual Info: IRFBC30AS, SiHFBC30AS, IRFBC30AL, SiHFBC30AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt |
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IRFBC30AS, SiHFBC30AS IRFBC30AL, SiHFBC30AL O-262) O-263) 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC | |
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Contextual Info: IRFBC30A, SiHFBC30A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 2.2 Qg (Max.) (nC) 23 Qgs (nC) 5.4 Qgd (nC) 11 Configuration Available • Improved Gate, Avalanche and Dynamic dV/dt RoHS* |
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IRFBC30A, SiHFBC30A 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
mosfet 600v 10a to-220abContextual Info: PD - 95700 SMPS MOSFET IRFBC30APbF HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Lead-Free l Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic |
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IRFBC30APbF O-220AB mosfet 600v 10a to-220ab | |
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Contextual Info: PD- 91889 IRFBC30A SMPS MOSFET HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic |
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IRFBC30A O-220AB | |
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Contextual Info: PD- 91890A SMPS MOSFET IRFBC30AS HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic |
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1890A IRFBC30AS | |
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Contextual Info: IRFBC30AS, SiHFBC30AS, IRFBC30AL, SiHFBC30AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt |
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IRFBC30AS, SiHFBC30AS IRFBC30AL, SiHFBC30AL 2002/95/EC O-262) O-263) 2002/95/EC. 2002/95/EC 2011/65/EU. | |
4139 temperature
Abstract: 9571 AN609 IRFBC30AL IRFBC30AS SiHFBC30AL SiHFBC30AS 74139
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IRFBC30AS SiHFBC30AS IRFBC30AL SiHFBC30AL AN609, 20-Apr-10 4139 temperature 9571 AN609 74139 | |
IRFBC30A
Abstract: SiHFBC30A SiHFBC30A-E3
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IRFBC30A, SiHFBC30A O-220 18-Jul-08 IRFBC30A SiHFBC30A-E3 | |
MAR 740 MOSFET TRANSISTORContextual Info: IRFBC30A, SiHFBC30A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 2.2 Qg (Max.) (nC) 23 Qgs (nC) 5.4 Qgd (nC) 11 Configuration Available • Improved Gate, Avalanche and Dynamic dV/dt RoHS* |
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IRFBC30A, SiHFBC30A 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 MAR 740 MOSFET TRANSISTOR | |
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Contextual Info: IRFBC30AS, SiHFBC30AS, IRFBC30AL, SiHFBC30AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt |
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IRFBC30AS, SiHFBC30AS IRFBC30AL, SiHFBC30AL O-262) O-263) 2002/95/EC 11-Mar-11 | |