IRF954 Search Results

AN609

Abstract: IRF9540 SiHF9540
Contextual Info: IRF9540_RC, SiHF9540_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

Contextual Info: PD -9.1483 International IQR Rectifier IRF9540NS PRELIMINARY HEXFET Power MOSFET • • • • • • • Advanced Process Technology Surface Mount Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated V d s s = -1 0 0 V

IRF9540 mosfet

Abstract: IRF9540 application data sheet IRF9540 irf9540 IRF9540 led driver TA17521 RF1S9540SM9A TB334 RF1S9540 RF1S9540SM
Contextual Info: IRF9540, RF1S9540SM Data Sheet 19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of

Contextual Info: IRF9540S, SiHF9540S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 100 RDS(on) () VGS = - 10 V Qg (Max.) (nC) 0.20 61 Qgs (nC) 14 Qgd (nC) 29 Configuration Single S DESCRIPTION D2PAK (TO-263) G G D • Halogen-free According to IEC 61249-2-21

SMD-220

Abstract: smd diode mj 19 DT SMD SMD220 g10 smd AN-994 IRF9540S power mosfet smd package SMD g10 AN994
Contextual Info: PD - 9.917A IRF9540S HEXFET Power MOSFET l l l l l l l Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P Channel 175°C Operating Temperature Fast Switching D VDSS = -100V RDS on = 0.20Ω G ID = -19A S Description

1RF9540

Abstract: l 9143 irf 409 IRF 9540 L 9141 IRF95XX IRF high current p-channel IRF9140 IRF9140 TO 220 IRF9540
Contextual Info: 7964142 SAMSUNG S E M I C O N D U C T O R INC Hfl DE 1 7 ^ 4 1 4 5 IRF9140/9141/9142/9143 IRFP9140/9141 /9142/9143 “ IRF9540/9541Z9542/9543_ ^ " D0GS40Ö t- P-CHANNEL POWER MOSFETS Preliminary Specifications - 1 0 0 Volt, 0.2 Ohm SFET PRODUCT SUMMARY

F954

Abstract: ST l 9143 F9540 IRF954 IRF9540 l 9143 fp 9141 irfp9140 9143
Contextual Info: IRF9540/9541 /9542/9543 IRFP9140/9141 /9142/9143 P-CHANNEL POWER MOSFETS FEATURES • • • • • • • TO-220 L ow e r R d s ON Im p ro ve d in d u ctive r u g g e d n e s s F a st s w itc h in g tim e s R u g g e d p o iy silic o n g a te cell stru ctu re

100v 23A P-Channel MOSFET

Abstract: IRF9540L IRF9540S
Contextual Info: PD - 91483C IRF9540NS/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRF9540S l Low-profile through-hole (IRF9540L) l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l D l VDSS = -100V RDS(on) = 0.117Ω

IRF9540N

Abstract: 100v 23A P-Channel MOSFET SEC IRF9540N datasheet of irf9540n IRF9540n datasheet irf9540n to220ab ir
Contextual Info: PD - 91437B IRF9540N HEXFET Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated D VDSS = -100V RDS on = 0.117Ω G ID = -23A S Description Fifth Generation HEXFETs from International Rectifier

Contextual Info: PD - 96030 IRF9540NSPbF IRF9540NLPbF HEXFET Power MOSFET l l l l l l l l Advanced Process Technology Ultra Low On-Resistance 150°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Some Parameters are Different from IRF9540NS/L

Contextual Info: PD - 9.917A IRF9540S HEXFET Power MOSFET l l l l l l l Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P Channel 175°C Operating Temperature Fast Switching D VDSS = -100V RDS on = 0.20Ω G ID = -19A S Description

Contextual Info: IRF9540, SiHF9540 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 100 RDS(on) () VGS = - 10 V Qg (Max.) (nC) 14 Qgd (nC) 29 Configuration RoHS* • P-Channel 61 Qgs (nC) Available • Repetitive Avalanche Rated

IRF9610

Abstract: IRFP143 IRF9612 IRFP240 THOMSON DISTRIBUTOR 58e d IRFP142 IRFP141 IRFP243 THOMSON 58E THOMSON 58E CASE OUTLINE
Contextual Info: SflE D THOMSON/ DI STR IBUTOR • TnEhfl?3 0005003 ■ TCSK International SR ecB fier HEXFET Power MOSFETs Plastic Insertable Package TO-220 P-Channel Part Number Vos Drain Source Voltage Volts IRF9512 IRF9510 IRF9522 IRF9520 IRF9532 IRF9530 IRF9542 IRF9540

1RF9620

Abstract: 1RF9540 1RF9622 IRF9532 IRF9522 IRF9523 IRF9611 IRF9630 samsung IRF9613 IRF9240
Contextual Info: - W. f Ä * £ fê 13=25*0 m % tt % IRF9240 tR F 9 2 41 SAMSUNG SAMSUNG IRF9242 IRF9243 IRF9510 SAMSUNG SAMSUNG SAMSUNG 1RF9511 IRF9512 IRF9513 SAMSUNG SAMSUNG SAMSUNG 1RF9520 IRF9521 IRF9522 IRF9523 IRF953Ü IRF9531 IRF9532 IRF9533 IRF954Q IRF9541 íR F 9 542

IRF9540 application

Abstract: data sheet IRF9540 IRF9540 SiHF9540 SiHF9540-E3
Contextual Info: IRF9540, SiHF9540 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 100 RDS(on) (Ω) VGS = - 10 V Qg (Max.) (nC) 61 Qgs (nC) 14 Qgd (nC) 29 Configuration • Repetitive Avalanche Rated 0.20 Available RoHS* • P-Channel

IRF9540S

Abstract: irf9540spbf
Contextual Info: IRF9540S, SiHF9540S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 100 RDS(on) (Ω) VGS = - 10 V 0.20 Qg (Max.) (nC) 61 Qgs (nC) 14 Qgd (nC) 29 Configuration Single S • • • • • • • • Surface Mount Available in Tape and Reel

f 1010

Contextual Info: PD - 94790A IRF9540NPbF • Lead-Free 1 IRF9540NPbF 2 IRF9540NPbF TO-220AB Package Outline Dimensions are shown in millimeters inches 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) -B- 3.78 (.149) 3.54 (.139) 4.69 (.185) 4.20 (.165) -A- 1.32 (.052) 1.22 (.048)

IRF9540NSPBF

Contextual Info: PD - 96030 IRF9540NSPbF IRF9540NLPbF HEXFET Power MOSFET l l l l l l l l Advanced Process Technology Ultra Low On-Resistance 150°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Some Parameters are Different from IRF9540NS/L

Contextual Info: 4Ô5S45S □ 0 1 4 0 5 4 International IksrI Rectifier GSM • INR PD-9.421C IRF9540 INTERNATIONAL R E C T I F I E R HEXFET Power M O SFET Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel 175°C Operating Temperature Fast Switching Ease of Paralleling

Contextual Info: PD 9.1437 International lö R Rectifier IRF9540N PRELIMINARY H E X F E T Pow er M O S F E T • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • P-Channel • Fully Avalanche Rated V DSS = - 1 0 0 V

IRF9540N

Abstract: of irf9540n irf9540n to220ab ir
Contextual Info: PD 9.1437A International l R Rectifier IRF9540N PRELIMINARY HEXFET Power MOSFET • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • P-Channel • Fully Avalanche Rated Vqss = -100V Ftas on = 0 .1 1 7 Q

RF9540

Contextual Info: PD -91483C International Iö R Rectifier IRF9540NS/L HEXFET Power MOSFET • Advanced Process Technology • Surface Mount I RF9540S • Low-profile through-hole (IRF9540L) • 175°C Operating Temperature • Fast Switching • P-Channel • Fully Avalanche Rated

IRF9540

Abstract: F9540 IRF9540 mosfet MOSFET IRF9540 IR954 ir9540 IRF9541 F9541 F9542
Contextual Info: P-CHANNEL POWER MOSFETS IRF9540/9541 /9542/9543 FEATURES • • • • • • • Lo w er R ds ON Im proved in d u c tive ru g g ed n es s F a st sw itch in g tim e s R u g g ed p o lysiiico n g a te c e ll s tru ctu re Low er in p u t c a p a c ita n c e

IRF9540L

Abstract: IRF9540S
Contextual Info: PD - 91483D IRF9540NS/L Advanced Process Technology Surface Mount IRF9540S l Low-profile through-hole (IRF9540L) l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description HEXFET Power MOSFET l D l VDSS = -100V RDS(on) = 0.117Ω