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    IRF953 Search Results

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    IRF953 Price and Stock

    Rochester Electronics LLC IRF9532

    P-CHANNEL POWER MOSFET
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    DigiKey IRF9532 Bulk 19,101 417
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    • 1000 $0.72
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    Rochester Electronics LLC IRF9533

    P-CHANNEL POWER MOSFET
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    DigiKey IRF9533 Bulk 11,834 468
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    Vishay Siliconix IRF9530PBF-BE3

    MOSFET P-CH 100V 12A TO220AB
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    DigiKey IRF9530PBF-BE3 Tube 3,387 1
    • 1 $1.87
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    New Advantage Corporation IRF9530PBF-BE3 650 1
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    Rochester Electronics LLC IRF9530

    MOSFET P-CH 100V 12A TO220AB
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    DigiKey IRF9530 Bulk 3,262 222
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    Vishay Siliconix IRF9530

    MOSFET P-CH 100V 12A TO220AB
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    DigiKey IRF9530 Tube
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    Bristol Electronics IRF9530 650
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    Quest Components IRF9530 72
    • 1 $1.8
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    IRF9530 40
    • 1 $1.8
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    Vyrian IRF9530 1,985
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    Find more IRF953 price and stock on Findchips.com

    IRF953 Datasheets (107)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRF9530 Fairchild Semiconductor 12A, 100V, 0.300 Ohm, P-Channel Power MOSFET Original PDF
    IRF9530 Fairchild Semiconductor 12A, 100V, 0.300 Ohm, P-Channel Power MOSFETs Original PDF
    IRF9530 Harris Semiconductor Power MOSFET Selection Guide Original PDF
    IRF9530 Intersil 12A, 100V, 0.300 ?, P-Channel Power MOSFETs Original PDF
    IRF9530 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRF9530 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 100V 12A TO-220AB Original PDF
    IRF9530 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRF9530 International Rectifier HEXFET Power MOSFET Scan PDF
    IRF9530 International Rectifier HEXFET Power MOSFET Scan PDF
    IRF9530 International Rectifier Transistors Scan PDF
    IRF9530 International Rectifier TO-220 Plastic Package HEXFETs Scan PDF
    IRF9530 International Rectifier TO-220 / TO-247 HEXFET Power MOSFETs Scan PDF
    IRF9530 Intersil Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, P-Channel, 100V, 12A, Pkg Style TO-220AB Scan PDF
    IRF9530 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRF9530 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    IRF9530 Unknown FET Data Book Scan PDF
    IRF9530 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRF9530 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRF9530 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IRF9530 Samsung Electronics P-CHANNEL POWER MOSFETS Scan PDF

    IRF953 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IRF9530S

    Abstract: SiHF9530S SiHF9530S-E3 SiHF9530S-GE3
    Text: IRF9530S, SiHF9530S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 100 RDS(on) () VGS = - 10 V 0.30 Qg (Max.) (nC) 38 Qgs (nC) 6.8 Qgd (nC) 21 Configuration Single S DESCRIPTION D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21


    Original     		IRF9530S, SiHF9530S O-263) 2002/95/EC 11-Mar-11 IRF9530S SiHF9530S-E3 SiHF9530S-GE3 PDF

    transistor mosfet irf9530

    Abstract: IRF9530 transistor irf9530
    Text: Tem ic IRF9530 Siliconix P-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) r DS(on) ( ß ) I d (A) -1 0 0 0.30 -1 2 TO-220AB “ Ö " Top View P-Channel MOSFET Absolute Maximum Ratings (Tc = 25 °C Unless Otherwise Noted) Parameter Symbol


    OCR Scan     		IRF9530 O-220AB P-36852--Rev. transistor mosfet irf9530 IRF9530 transistor irf9530 PDF

    SiHF9530S-E3

    Abstract: IRF9530S SiHF9530S IRF9530STRRPBF
    Text: IRF9530S, SiHF9530S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 100 RDS(on) (Ω) VGS = - 10 V 0.30 Qg (Max.) (nC) 38 Qgs (nC) 6.8 Qgd (nC) 21 Configuration Single S Surface Mount Available in Tape and Reel


    Original     		IRF9530S, SiHF9530S O-263) 18-Jul-08 SiHF9530S-E3 IRF9530S IRF9530STRRPBF PDF

    Untitled

    Abstract: No abstract text available
    Text: P D -9.1523 International I Q R Rectifier IRF9530NS/L PRELIMINARY HEXFET Power M OSFET • Advanced Process Technology • Surface Mount IRF9530NS • Low-profile through-hole (IRF9530NL) • 175°C Operating Temperature • Fast Switching • P-Channel


    OCR Scan     		IRF9530NS/L -100V IRF9530NS) IRF9530NL) PDF

    IRF9120

    Abstract: 1rf830 1rf9530 IRF9122 IRF9513 IRF9141 IRF9512 IRF9523 IRF843 IRF9130
    Text: - * sy € i± £ IR F 9522 IRF9523 IRF9530 IRF9531 IRF9532 IRF9533 »%^<n * f - 1 IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR ]R IR IR IR ¡R IR IR IR IR IR IR IR IR IR IR £ is V 500 N 45 0 P -100 P -60 P -100 P -60 P -100 P -60 P -100 P -60 P -200 P -150


    OCR Scan     		1RF842 O-220AB IRF843 T0-220AB IRF9130 IRF9223 1RF9230 IRF9231 IRF9232 1RF9233 IRF9120 1rf830 1rf9530 IRF9122 IRF9513 IRF9141 IRF9512 IRF9523 PDF

    Untitled

    Abstract: No abstract text available
    Text: P-CHANNEL POWER MOSFETS IRF9530/9531 FEATURES TO-220 • Lower R d s <on • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability


    OCR Scan     		IRF9530/9531 O-220 IRF9530 -100V IRF9531 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF9530, SiHF9530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 100 RDS(on) () VGS = - 10 V 0.30 Qg (Max.) (nC) 38 Qgs (nC) 6.8 Qgd (nC) 21 Configuration Single S Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		IRF9530, SiHF9530 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF9530S, SiHF9530S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 100 RDS(on) () VGS = - 10 V 0.30 Qg (Max.) (nC) 38 Qgs (nC) 6.8 Qgd (nC) 21 Configuration Single S DESCRIPTION D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21


    Original     		IRF9530S, SiHF9530S O-263) 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    1RF9130

    Abstract: L 9132 diode 9532 F913 IR 9530 irf 131 on irfp9131 IRF9130-2
    Text: '"7964142 " S AM S U N G SEMICONDUCTO nhHJ,4d UUU54US 7 mFSi 30/913179132/9133 ^ 1RFP9130/9131 /9132/9133 IRF9530/9531Z9532/9533 Preliminary Specifications P -C H A N N E L T a -1 0 0 Volt, 0.30 Ohm SFET 0D0S40S ? PRODUCT SUMMARY Part Number Vus RoS on Id


    OCR Scan     		1RFP9130/9131 IRF9530/9531Z9532/9533 UUU54US 0D0S40S FP9130, FP9131, IRF9531 IRF/IRFP9132. FP9133, 00GS435 1RF9130 L 9132 diode 9532 F913 IR 9530 irf 131 on irfp9131 IRF9130-2 PDF

    91077

    Abstract: No abstract text available
    Text: IRF9530S, SiHF9530S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 100 RDS(on) () VGS = - 10 V 0.30 Qg (Max.) (nC) 38 Qgs (nC) 6.8 Qgd (nC) 21 Configuration Single S DESCRIPTION D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21


    Original     		IRF9530S, SiHF9530S 2002/95/EC O-263) 18-Jul-08 91077 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF9530S, SiHF9530S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 100 RDS(on) () VGS = - 10 V 0.30 Qg (Max.) (nC) 38 Qgs (nC) 6.8 Qgd (nC) 21 Configuration Single S DESCRIPTION D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21


    Original     		IRF9530S, SiHF9530S 2002/95/EC O-263) 11-Mar-11 PDF

    irf9530

    Abstract: irf 9530 f953
    Text: IRF9530/9531 /9532/9533 c r S ilic a n ix in c o rp o ra te d P-Channel Enhancement Mode Transistors TO-22QAB TOP VIEW PRODUCT SUMMARY o PART NUMBER V BR DSS (V) lDS(ON) ( il) (A) IRF9530 -100 0.30 -1 2 IRF9531 -6 0 0.30 -1 2 IRF9532 -100 0.40 -10 IRF9533


    OCR Scan     		IRF9530/9531 O-22QAB IRF9530 IRF9531 IRF9532 IRF9533 Ener33 F9531, IRF953 irf 9530 f953 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF9530, SiHF9530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 100 RDS(on) () VGS = - 10 V 0.30 Qg (Max.) (nC) 38 Qgs (nC) 6.8 Qgd (nC) 21 Configuration Single S Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		IRF9530, SiHF9530 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    IRF9530N

    Abstract: No abstract text available
    Text: PD - 9.1482A IRF9530N PRELIMINARY HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated D VDSS = -100V RDS on = 0.20Ω G ID = -13A


    Original     		IRF9530N -100V O-220 IRF9530N PDF

    IRF9530 mosfet

    Abstract: IRF9530 RF1S9530 RF1S9530SM RF1S9530SM9A TB334
    Text: IRF9530, RF1S9530SM Data Sheet 12A, 100V, 0.300 Ohm, P-Channel Power MOSFETs [ /Title These are P-Channel enhancement mode silicon gate power IRF95 field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified


    Original     		IRF9530, RF1S9530SM IRF95 530SM IRF9530 mosfet IRF9530 RF1S9530 RF1S9530SM RF1S9530SM9A TB334 PDF

    IRF9610

    Abstract: IRFP143 IRF9612 IRFP240 THOMSON DISTRIBUTOR 58e d IRFP142 IRFP141 IRFP243 THOMSON 58E THOMSON 58E CASE OUTLINE
    Text: SflE D THOMSON/ DI STR IBUTOR • TnEhfl?3 0005003 ■ TCSK International SR ecB fier HEXFET Power MOSFETs Plastic Insertable Package TO-220 P-Channel Part Number Vos Drain Source Voltage Volts IRF9512 IRF9510 IRF9522 IRF9520 IRF9532 IRF9530 IRF9542 IRF9540


    OCR Scan     		O-220 IRF9512 TQ-220AB IRF9510 IRF9522 IRF9520 IRF9532 IRF9530 IRF9542 IRF9540 IRF9610 IRFP143 IRF9612 IRFP240 THOMSON DISTRIBUTOR 58e d IRFP142 IRFP141 IRFP243 THOMSON 58E THOMSON 58E CASE OUTLINE PDF

    1RF9620

    Abstract: 1RF9540 1RF9622 IRF9532 IRF9522 IRF9523 IRF9611 IRF9630 samsung IRF9613 IRF9240
    Text: - W. f Ä * £ fê 13=25*0 m % tt % IRF9240 tR F 9 2 41 SAMSUNG SAMSUNG IRF9242 IRF9243 IRF9510 SAMSUNG SAMSUNG SAMSUNG 1RF9511 IRF9512 IRF9513 SAMSUNG SAMSUNG SAMSUNG 1RF9520 IRF9521 IRF9522 IRF9523 IRF953Ü IRF9531 IRF9532 IRF9533 IRF954Q IRF9541 íR F 9 542


    OCR Scan     		-25cC) IRF9240 IRFS241 25F9542 O-220 IRF9543 IRF961G IRF9612 1RF9620 1RF9540 1RF9622 IRF9532 IRF9522 IRF9523 IRF9611 IRF9630 samsung IRF9613 PDF

    IRF9530N

    Abstract: No abstract text available
    Text: P D - 9.1482 International IOR Rectifier IRF9530N PRELIMINARY H E X F E # Power M O SFET • • • • • • • Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated


    OCR Scan     		IRF9530N O-220 IRF9530N PDF

    diode SM 78A

    Abstract: No abstract text available
    Text: PD - 9.1482A International IO R Rectifier IRF9530N PRELIMINARY HEXFET Power MOSFET • • • • • • • Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated


    OCR Scan     		IRF9530N O-220 diode SM 78A PDF

    AN609

    Abstract: IRF9530S SiHF9530S
    Text: IRF9530S_RC, SiHF9530S_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		IRF9530S SiHF9530S AN609, 18-Mar-10 AN609 PDF

    irf9530

    Abstract: irf9532 JEDEC TO-263A IRF9531
    Text: H A F R F R IS S E M I C O N D U C T O R IRF9530, IRF9531, IRF9532, IRF9533, RF1S9530, RF1S9530SM 10A and -12A, -80V and -100V, 0.3 and 0.4 Ohm, P-Channel Power MOSFETs January 1998 Features Description • -10A and -12A, -80V and -100V These are P-Channel enhancement mode silicon gate


    OCR Scan     		IRF9530, IRF9531, IRF9532, IRF9533, RF1S9530, RF1S9530SM -100V, IRF9532 irf9530 JEDEC TO-263A IRF9531 PDF

    9916 mosfet

    Abstract: AN-994 IRF9530S SMD-220
    Text: PD-9.916 International i»R Rectifier IRF9530S HEXFET Power MOSFET • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel 175°C Operating Temperature Fast Switching Description Third Generation HEXFETs from International Rectifier provide the designer


    OCR Scan     		IRF9530S SMD-220 9916 mosfet AN-994 IRF9530S PDF

    irf 425

    Abstract: ICL8038CCPD HSMS-2820-BLK icl8038ccjd IRF 315 HSDL-1001-001 hsmp-3890 ICL232CPE HSMP 2820 ICM7211AMIPL
    Text: Semiconductor Directory Page 1.34 1.58 1.54 0.87 2.09 IRF INT IRF IRF IRF 815 824 815 Ñ 816 IRF9410 IRF9510 IRF9510S IRF9520 IRF9520 IRF9520N IRF9530 1.28 0.80 1.47 0.74 0.62 1.04 1.23 IRF IRF IRF IRF INT IRF INT 816 815 816 815 Ñ 814 824 Ñ 824 Ñ 816 815


    Original     		HIP4080AIP ICM7243BIPL IRF3515S IRF840 HIP4081AIP ICM7555CN IRF3710 HIP4082IP ICM7555IBA irf 425 ICL8038CCPD HSMS-2820-BLK icl8038ccjd IRF 315 HSDL-1001-001 hsmp-3890 ICL232CPE HSMP 2820 ICM7211AMIPL PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 94929 IRF9530PbF • Lead-Free Document Number: 91076 1/8/04 www.vishay.com 1 IRF9530PbF Document Number: 91076 www.vishay.com 2 IRF9530PbF Document Number: 91076 www.vishay.com 3 IRF9530PbF Document Number: 91076 www.vishay.com 4 IRF9530PbF Document Number: 91076


    Original     		IRF9530PbF O-220AB 08-Mar-07 PDF