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    IRF630 MOSFET DATA SHEET Search Results

    IRF630 MOSFET DATA SHEET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    NFMJMPC226R0G3D Murata Manufacturing Co Ltd Data Line Filter, Visit Murata Manufacturing Co Ltd
    NFM15PC755R0G3D Murata Manufacturing Co Ltd Feed Through Capacitor, Visit Murata Manufacturing Co Ltd
    NFM15PC435R0G3D Murata Manufacturing Co Ltd Feed Through Capacitor, Visit Murata Manufacturing Co Ltd
    NFM15PC915R0G3D Murata Manufacturing Co Ltd Feed Through Capacitor, Visit Murata Manufacturing Co Ltd
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation

    IRF630 MOSFET DATA SHEET Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    irf630

    Abstract: RD161
    Text: PD-9.3091 International S Rectifier IRF630 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements VDSS = 200V ^DS on = 0 -4 0 Í2 l D = 9 .0 A Description DATA


    OCR Scan     		IRF630 O-220 irf630 RD161 PDF

    irf630

    Abstract: rf1s630sm9a IRF630 Fairchild
    Text: IRF630, RF1S630SM Data Sheet [ /Title IRF63 0, RF1S6 30SM /Subject (9A, 200V, 0.400 Ohm, NChannel Power MOSFETs) /Autho r () /Keywords (9A, 200V, 0.400 Ohm, NChannel Power MOSFETs, Intersil Corporation, TO220AB , TO263AB June 1999 9A, 200V, 0.400 Ohm, N-Channel Power


    Original     		IRF630, RF1S630SM IRF63 O220AB O263AB RF1S630SM irf630 rf1s630sm9a IRF630 Fairchild PDF

    IRF632 datasheet

    Abstract: IRF630 datasheet IRF630 IRF632 RF1S630SM RF1S630SM9A TB334 IRF630 mosfet IRF630 Fairchild
    Text: IRF630, RF1S630SM Data Sheet 9A, 200V, 0.400 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode


    Original     		IRF630, RF1S630SM TA17412. IRF632 datasheet IRF630 datasheet IRF630 IRF632 RF1S630SM RF1S630SM9A TB334 IRF630 mosfet IRF630 Fairchild PDF

    TA17412

    Abstract: irf630 irf630 equivalent IRF632 RF1S630SM RF1S630SM9A TB334 IRF630 p IRF630 INTERSIL
    Text: IRF630, RF1S630SM Data Sheet 9A, 200V, 0.400 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode


    Original     		IRF630, RF1S630SM TA17412. 1578f TA17412 irf630 irf630 equivalent IRF632 RF1S630SM RF1S630SM9A TB334 IRF630 p IRF630 INTERSIL PDF

    f630

    Abstract: IRF630 HEXFET TRANSISTORS F633 IRFG31 IRF632 alps 103 DIODE C244 mosfet f630 IRFB32 IRF63Q
    Text: HE D I 4 055452 ÜGQâMTS t, | Data Sheet No. PD-9.309G INTERNATI ONAL RECTIFIER T -39-11 INTERNATIONAL RECTIFIER I “ R HEXFET* TRANSISTORS IRF63Q IRFG31 IM IRFB32 - C h a n n e l IRF633 Features: 200 Volt, 0.4 Ohm HEXFET TQ-220AB Plastic Package The HEXFET technology is the key to International Rec­


    OCR Scan     		IRF63Q IRFG31 IRFB32 IRF633 TQ-220AB C-245 IRF630, IRF631, IRF632, IRF633 f630 IRF630 HEXFET TRANSISTORS F633 IRF632 alps 103 DIODE C244 mosfet f630 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF630, RF1S630SM Semiconductor June 1999 Data Sheet 9A, 200V, 0.400 Ohm, N-Channel Power MOSFETs These are N-Channel enhancem ent mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a


    OCR Scan     		IRF630, RF1S630SM 400i2 PDF

    irf 4110

    Abstract: for IRF630 1RF631 IRF6322 MOTOROLA IRF630 MTM8N20 IRF630 IRF631 irf 1962 SS-AT9
    Text: MOTOROLA SC X S T R S /R F IME D II b3fej?554 0 0 0 ^ ^ 3 3 MOTOROLA I • SEMICONDUCTOR TECHNICAL DATA IRF630 IRF631 IRF632 P o w e r Field E ffe c t T ran sisto r N-Channel Enhancement-Mode Silicon Gate TM OS These TM O S Power FETs are designed fo r low


    OCR Scan     		IRF630 IRF631 IRF632 IRF630, IRF632 irf 4110 for IRF630 1RF631 IRF6322 MOTOROLA IRF630 MTM8N20 irf 1962 SS-AT9 PDF

    tektronix 576 curve tracer

    Abstract: tektronix type 576 curve tracer curve tracer specification of curve tracer AN-957 12 VOLTS CIRCUIT USING MOSFET IRF630 AN957 short circuit tracer INT-944
    Text: Application Note AN-957 Measuring HEXFET MOSFET Characteristics Table of Contents Page 1. General Information. 1 2. BVDSS . 3


    Original     		AN-957 tektronix 576 curve tracer tektronix type 576 curve tracer curve tracer specification of curve tracer AN-957 12 VOLTS CIRCUIT USING MOSFET IRF630 AN957 short circuit tracer INT-944 PDF

    tektronix 576 curve tracer

    Abstract: tektronix type 576 curve tracer tektronix 475 short circuit tracer IRF630 AN957 curve tracer INT-944 AN-957 Tracer 176
    Text: AN-957 v.Int Measuring HEXFETCharacteristics (HEXFET is the trademark for International Rectifier Power MOSFETs) Topics covered: • • • • • • • • • • • • • • • • • • • Converting the nomenclature from bipolars to MOSFETs


    Original     		AN-957 tektronix 576 curve tracer tektronix type 576 curve tracer tektronix 475 short circuit tracer IRF630 AN957 curve tracer INT-944 AN-957 Tracer 176 PDF

    tektronix 576 curve tracer

    Abstract: No abstract text available
    Text: VISHAY SILICONIX Power MOSFETs Application Note AN-957 Measuring Power MOSFET Characteristics TABLE OF CONTENTS Page 1. General Information . 2


    Original     		AN-957 18-Nov-10 tektronix 576 curve tracer PDF

    tektronix 576 curve tracer

    Abstract: tektronix type 576 curve tracer curve tracer AN957 specification of curve tracer 5V GATE TO SOURCE VOLTAGE MOSFET IRF630 short circuit tracer tektronix 475 INT-944
    Text: Index AN-957 v.Int Measuring HEXFETCharacteristics (HEXFET is the trademark for International Rectifier Power MOSFETs) Topics covered: • • • • • • • • • • • • • • • • • • • Converting the nomenclature from bipolars to MOSFETs


    Original     		AN-957 tektronix 576 curve tracer tektronix type 576 curve tracer curve tracer AN957 specification of curve tracer 5V GATE TO SOURCE VOLTAGE MOSFET IRF630 short circuit tracer tektronix 475 INT-944 PDF

    Untitled

    Abstract: No abstract text available
    Text: International jag Rectifier • uêSS^SS 0 0 1 4 7 1 b 3bT B I N R PD-9.3091 I P p e o n INTERNATIONAL R ECTIFIER bSE HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements


    OCR Scan     		IRF630 PDF

    Untitled

    Abstract: No abstract text available
    Text: BACK HV91 Series Application Note AN-H21 Calculating Power Dissipation and Supply Current in HV91 Series Parts Part I The internal circuitry of the HV9110/11/12/13/14 and HV9120/23 uses very little current by itself—generally less than 1mA. However, when driving a large MOSFET very fast, considerable


    Original     		AN-H21 HV9110/11/12/13/14 HV9120/23 IRF630 750KHz. IRF630, 10-9F 000Hz PDF

    mosfet cross reference

    Abstract: Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET SUP60NO6-18 MOSFET TOSHIBA 2SK irf510 Motorola SUP70NO6 STP16NEO6 IRF540 substitution
    Text: TMOS Power MOSFET Cross Reference This Cross reference lists MOSFETs by either industry standard part number or by manufacturer's part number for which there is a Motorola nearest or similar replacement. For devices not listed, or for additional information, contact the nearest Motorola Franchised Distributor or your local


    Original     		PDF

    AN-H21

    Abstract: irf630 mosfet data sheet HV9120 IC MOSFET QG IRF630 irf630 equivalent HV9113
    Text: HV91 Series Application Note AN-H21 Calculating Power Dissipation and Supply Current in HV91 Series Parts Part I The internal circuitry of the HV9110/11/12/13/14 and HV9120/23 uses very little current by itself—generally less than 1mA. However, when driving a large MOSFET very fast, considerable


    Original     		AN-H21 HV9110/11/12/13/14 HV9120/23 IRF630 750KHz. IRF630, 10-9F 000Hz AN-H21 irf630 mosfet data sheet HV9120 IC MOSFET QG irf630 equivalent HV9113 PDF

    HV9113

    Abstract: HV9120 VN2460
    Text: HV91 Series Application Note AN-H21 Calculating Power Dissipation and Supply Current in HV91 Series Parts Part I The internal circuitry of the HV9110/11/12/13 and HV9120/23 uses very little current by itself—generally less than 1mA. However, when driving a large MOSFET very fast, considerable


    Original     		AN-H21 HV9110/11/12/13 HV9120/23 IRF630, 10-9F 000Hz HV9113 HV9120 VN2460 PDF

    HV9120

    Abstract: No abstract text available
    Text: HV91 Series Application Note AN-H21 Calculating Power Dissipation and Supply Current in HV91 Series Parts Part I The internal circuitry of the HV9110/11/12/13 and HV9120/23 uses very little current by itself—generally less than 1mA. However, when driving a large MOSFET very fast, considerable


    Original     		AN-H21 HV9110/11/12/13 HV9120/23 IRF630, 10-9F 000Hz HV9120 PDF

    HV9113

    Abstract: AN-H21 IC MOSFET QG VN2460 545u 0024W
    Text: AN-H21 Application Note Calculating Power Dissipation and Supply Current in HV91 Series Parts Part I First, the operational VDD the IC will use should be known. This is generally a parameter decided upon by the designer for his convenience. Once VDD is known, it is used to find the


    Original     		AN-H21 HV9110/11/12/13 HV9120/23 HV9113 AN-H21 IC MOSFET QG VN2460 545u 0024W PDF

    Untitled

    Abstract: No abstract text available
    Text: M OTOROLA SEMICONDUCTOR TECHNICAL DATA IRF630 Pow er Field E ffect Transistor N-Channel Enhancement-Mode Silicon Gate This TMOS Power FET is designed fo r low voltage, high speed power sw itching applications such as sw itching regulators, converters, solenoid


    OCR Scan     		IRF630 21A-06 O-220AB) b3b7254 PDF

    IRF630 HARRIS

    Abstract: Transistor irf230 BUZ30 5A/IRF630 HARRIS
    Text: HARRIS SEMICOND SECTOR tflE D • M30E271 QOS1 1 1 4 S E M I C O N D U C T O R January 1993 N “C h 3 n n l M O S C h ip Die Features • HAS PCF230W HARRIS a ■ Passivated • Contact Metallization - Gate and Source - Aluminum • Drain - Tri-Metal Al-Ti-Ni


    OCR Scan     		M30E271 PCF230W Mil-Std-750, IRF630 BUZ30 IRF230 2N6758 IRFF230 2N6798 PCF230W IRF630 HARRIS Transistor irf230 5A/IRF630 HARRIS PDF

    IRF9310

    Abstract: mosfet cross reference korea IRFZ44 IRF 949 replacement BUZ 36 philips master replacement guide 2SK2146 IRF540 substitution MOSFET TOSHIBA 2SK IRF510 substitution
    Text: TMOS Power MOSFET Cross Reference This Cross Reference lists MOSFETs by either industry standard part number or by manufacturer’s part number for which there is an ON Semiconductor nearest or similar replacement. For devices not listed, or for additional


    Original     		device2176 r14153 CR108/D IRF9310 mosfet cross reference korea IRFZ44 IRF 949 replacement BUZ 36 philips master replacement guide 2SK2146 IRF540 substitution MOSFET TOSHIBA 2SK IRF510 substitution PDF

    TRANSISTOR REPLACEMENT GUIDE

    Abstract: SMD2512 UDG-99127 UCC3921 1N4148 IRF630 IRF630S UCC3913 SLUS274 texas instruments transistor manual
    Text: Application Report SLUU076A - August 2000 UCC3913 or UCC3921 Hot Swap Power Manager Evaluation Board Power Management Products 1 Evaluation Board Operation This user’s guide highlights the UCC3913/ UCC3921 evaluation board in a typical –48-Vdc, 1-A application circuit.


    Original     		SLUU076A UCC3913 UCC3921 UCC3913/ 48-Vdc, TRANSISTOR REPLACEMENT GUIDE SMD2512 UDG-99127 1N4148 IRF630 IRF630S SLUS274 texas instruments transistor manual PDF

    3C80 philips

    Abstract: 3C80 ferrite 55310-A2 3C80 transformer PHILIPS toroidal core 3f3 MOC8100 3C80 3c80 material 55310-a2 core EI187-3C80
    Text: UNITRODE CORPORATION APPLICATION NOTE U-150 APPLYING THE UCC3570 VOLTAGE-MODE PWM CONTROLLER TO BOTH OFF-LINE AND DC/DC CONVERTER DESIGNS By Robert A. Mammano Vice President Advanced Technology Abstract BiCMOS processing provides the key to a new integrated PWM controller which offers higher switching frequencies at lower quiescent current drain while including new innovations in both performance and protection features.


    Original     		U-150 UCC3570 48-to5V RN55D 3C80 philips 3C80 ferrite 55310-A2 3C80 transformer PHILIPS toroidal core 3f3 MOC8100 3C80 3c80 material 55310-a2 core EI187-3C80 PDF

    55310-A2

    Abstract: 4N25 PHILIPS MTP3N80E clock u150 100 watt hf mosfet 12 volt U150D TOKO 3702
    Text: UNITRODE CORPORATION APPLICATION NOTE U-150 APPLYING THE UCC3570 VOLTAGE-MODE PWM CONTROLLER TO BOTH OFF-LINE AND DC/DC CONVERTER DESIGNS By Robert A. Mammano Vice President Advanced Technology Abstract BiCMOS processing provides the key to a new integrated PWM controller which offers higher switching frequen­


    OCR Scan     		U-150 UCC3570 48-toSV 187-3C80 26AWG 31AWG 25AWG T68-52D 20AWG 262LYF-0077M 55310-A2 4N25 PHILIPS MTP3N80E clock u150 100 watt hf mosfet 12 volt U150D TOKO 3702 PDF