IRF520 SWITCH Search Results

irf520 mosfet

Abstract: IRF520 circuit diagram irf520 irf520 switch transistor equivalent irf520 MOSFET IRF520
Contextual Info: IRF520 N-CHANNEL 100V - 0.115 Ω - 10A TO-220 LOW GATE CHARGE STripFET II POWER MOSFET TYPE IRF520 • ■ ■ ■ ■ ■ VDSS RDS on ID 100 V <0.27 Ω 10 A TYPICAL RDS(on) = 0.115Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED LOW GATE CHARGE

circuit diagram irf520

Abstract: GC233
Contextual Info: SGS-THOMSON IRF520 IRF520FI IttJtSTMtKS N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF520 IRF520FI Voss R d S o ii Id 100 V 100 V 0.27 Q 0.27 Q 10 A 7 A • . ■ . . ■ AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C

irf520 mosfet

Abstract: irf520 switch IRF520
Contextual Info: IRF520 N-CHANNEL 100V - 0.115 Ω - 10A TO-220 LOW GATE CHARGE STripFET II POWER MOSFET TYPE IRF520 • ■ ■ ■ ■ ■ VDSS RDS on ID 100 V <0.27 Ω 10 A TYPICAL RDS(on) = 0.115Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED LOW GATE CHARGE

IRF520 mosfet

Abstract: IRF520
Contextual Info: IRF520 N-CHANNEL 100V - 0.115 Ω - 10A TO-220 LOW GATE CHARGE STripFET II POWER MOSFET TYPE IRF520 • ■ ■ ■ ■ ■ VDSS RDS on ID 100 V <0.27 Ω 10 A TYPICAL RDS(on) = 0.115Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED LOW GATE CHARGE

IRF520

Abstract: transistor IRF520 circuit diagram irf520 IRF520 application note IRF520FI
Contextual Info: IRF520 IRF520FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF520 IRF520FI • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 100 V 100 V < 0.27 Ω < 0.27 Ω 10 A 7A TYPICAL RDS(on) = 0.23 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC

Contextual Info: 7^237 G G M S b 4 b 50b • S G T H SGS-THOMSON [MOœmigTOôfflDûi IRF520 IRF520FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF520 IRF520FI . . ■ . . . . V d ss RDS on Id 100 V 100 V < 0.27 a < 0.27 Q 10 A 7 A TYPICAL RDS(on) = 0.23 Q AVALANCHE RUGGED TECHNOLOGY

IRF520

Abstract: irf521 IRF523 F522
Contextual Info: N-CHANNEL POWER MOSFETS IRF520/521/522/523 FEATURES • • • • • • • Lower Ros ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability

irf521

Contextual Info: N-CHANNEL POWER MOSFETS IRF520/521 FEATURES • • • • • • • Lower R dsion Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability

TP10N10E

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IRF520 Pow er Field E ffect Transistor N-Channel Enhancement-Mode Silicon Gate This TM O S Power FET is designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid

Contextual Info: IRF520 Semiconductor D ata S h eet June 1999 9.2A, 100V, 0.270 Ohm, N-Channel Power MOSFET • 9.2A, 100V Ordering Information • SOA is Power Dissipation Limited • Single Pulse Avalanche Energy Rated • Nanosecond Switching Speeds • Linear Transfer Characteristics

IRF520

Abstract: irf520 mosfet mosfet irf520 irf521 power MOSFET IRF520
Contextual Info: N-CHANNEL POWER MOSFETS IRF520/521/522/523 FEATURES • • • • • • • TO-220 Lower Ros ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability

IRF520

Abstract: International Rectifier IRF520 IRF52
Contextual Info: PD-9.313K International S Rectifier IRF520 HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements V DSS= 1 0 0 V R DS on = 0 .2 7 Q

1RF520

Abstract: IRFS20 1rf520 transistor RF521 transistor IRF520 IRF522 mosfet 1000 amper IRFS22 IRF520 IRF521
Contextual Info: -F ile N u m b e r Standard Power MOSFETs IRF520, IRF521, IRF522, IRF523 1574 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N -CHANNEL ENHA N C EM EN T MODE

irf52 0

Contextual Info: IRF520 Data Sheet November 1999 9.2A, 100V, 0.270 Ohm, N-Channel Power MOSFET [ /Title IRF52 0 /Subject (9.2A, 100V, 0.270 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (9.2A, 100V, 0.270 Ohm, NChannel Power MOSFET, TO220AB , Intersil Corporation) /Creator ()

1RF520

Abstract: AVW smd smd ht1 AN-994 IRF520 IRF520S SMD-220 ScansUX1012
Contextual Info: PD-9.313K International raR Rectifier IRF520 HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements ^ dss - 100 V R DS on “ 0 -2 7 Î2

Power MOSFETs Application Notes irf520

Abstract: IRF520 application note irf520 mosfet IRF520 TB334
Contextual Info: IRF520 Data Sheet January 2002 9.2A, 100V, 0.270 Ohm, N-Channel Power MOSFET Features • 9.2A, 100V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

International Rectifier IRF520

Contextual Info: International i«R Rectifier MÔ55452 0 0 m b 4 4 343 m i N R HEXFET Power MOSFET • • • • • • PD-9.313K IRF520 INTERNATIONAL RECTIFIER Dynamic dv/dt Rating Repetitive Avalanche Rated 175°C Operating Temperature Fast Switching Ease of Paralleling

Power MOSFETs Application Notes irf520

Contextual Info: IRF520, SiHF520 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) () VGS = 10 V 0.27 Qg (Max.) (nC) 16 Qgs (nC) 4.4 Qgd (nC) 7.7 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature

IRF521

Abstract: IRF522 irf520 IRF523 RP523 R520 R521 irf520 power G-D-S TO-92 TO-220 3 lead bend
Contextual Info: SUPERTEX INC 01 ÇhSupertex inc. D e | fl773STS GOOlSflH 0 IRF520 IRF521 IRF522 IRF523 R520 R521 Preliminary N-Channel Enhancement-Mode Vertical DMOS Power FETs T “ 3 f-t* Ordering Information ^DSS ^ Order Number / Package bvms ^DS ON (max) *D(ON) (min)

irf520 mosfet

Abstract: SiHF520 IRF520 Power MOSFETs Application Notes irf520 SiHF520-E3 1IRF520
Contextual Info: IRF520, SiHF520 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) (Ω) VGS = 10 V 0.27 Qg (Max.) (nC) 16 Qgs (nC) 4.4 Qgd (nC) 7.7 Configuration Single D Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature

transistor IRF520

Abstract: irf520 mosfet 37ag transistor equivalent irf520 IRF520 TB334
Contextual Info: IRF520 Data Sheet November 1999 9.2A, 100V, 0.270 Ohm, N-Channel Power MOSFET 1574.4 Features • 9.2A, 100V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

irf5205

Abstract: IRF520 IRF521 IRF523 IRF522
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IRF520 IRF521 IRF522 IRF523 P o w e r Field E ffe c t T ra n s is to r N-Channel Enhancement-Mode Silicon Gate TMOS These TMOS Power FETs are designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid

IRF50

Abstract: irf521 irf520 pin configuration IRF521 irf522 irf523
Contextual Info: ZETE X S E M I C O N D U C T O R S =ISI> D • ^70570 0 0 0 5 5 4 7 0 ■ ZETB 95D 0 5 5 4 7 N-channel enhancement mode vertical DMOS FET IRF520 IRF521 IRF522 IRF523 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability

Contextual Info: /= T SGS-THOMSON * 71 HD g»I[Lli(gTIS iD(gi IRF520 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: METALLIZATION: Top Back BACKSIDE THICKNESS: DIE THICKNESS: PASSIVATION: BONDING PAD SIZE: Source Gate 9 5 x 9 5 mils SCHEMATIC DIAGRAM