IRF24 Search Results

IRF240

Abstract: mosfet IRF240
Contextual Info: PD - 90370 REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE IRF240 200V, N-CHANNEL Product Summary Part Number IRF240 BVDSS 200V RDS(on) 0.18Ω ID 18A The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors.

mosfet IRF240

Abstract: IRF242 IRF240 IRF241 IRF243
Contextual Info: Standard Power MOSFETs- IRF240, IRF241, IRF242, IRF243 File N um ber Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors 16 A and 18 A, 150 V - 200 V rDsion» - 0.18 Q and 0.22 O

MTM40N20

Abstract: MTM8N18 MTM45N12 MTM45N15 MTM40N18 IRF233 MTM8N10 MTM20N10 IRF240 IRF252
Contextual Info: POWER TRANSISTORS — TMOS METAL continued Metal TMOS Power MOSFETs — TO-204AA (continued) CASE 1-04 and CASE 1-05 V b R(DSS) (Volts) Min (Ohms) Max (Amp) 200 0.18 10 0.16 7.5 0.12 16 Pd <“•Tc = 25°C (Wans) Max IRF240 • 18 125 M TM 15N 20 • 15

irf246 N

Abstract: irf244 IRF246
Contextual Info: IRF244, IRF245, IRF246, IRF247 S E M I C O N D U C T O R 14A and 13A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 14A and 13A, 275V and 250V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

Contextual Info: IRF241 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)150 V(BR)GSS (V)20 I(D) Max. (A)18 I(DM) Max. (A) Pulsed I(D)11 @Temp (øC)100 IDM Max (@25øC Amb)72 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)125 Minimum Operating Temp (øC)-55õ

IRF250a

Abstract: MTH8P20 MTM20N10 MTM45N15 MTP2P45 IRF240 IRF250 IRF252 MTM12N18 MTM15N20
Contextual Info: POWER TRANSISTORS — TMOS METAL continued Metal TMOS Power MOSFETs — TO-204AA (continued) CASE 1-04 and CASE 1-05 V b R(DSS) (Volts) Min (Ohms) Max (Amp) 200 0.18 10 0.16 7.5 0.12 16 Pd <“•T c = 25°C (Wans) Max IRF240 • 18 125 M TM 15N 20 • 15

IRF240

Abstract: IN4723 irf640 IRF241 diodes IN4723 IRF243 IRF242 IRF641 IRF642 IRF643
Contextual Info: • IRF243 ■ IRF643 ■ IRF242 ■ IRF642 ■ IRF241 ■ IRF641 IRF240 IRF640 IRF240 ■ IRF241 ■ IRF242 ■ IRF243 IRF640 ■ IRF641 ■ IRF642 ■ IRF643 a S ilic o n ix Advanced Information 200V MOSPOWER N-Channel Enhancem ent-Mode These power FETs are designed especially for o ffline sw itching regulators, converters,

IRF240R

Abstract: IRF242R and18a IRF240 IRF241R IRF243R
Contextual Info: Rugged Power MOSFETs File N u m b er 2003 IRF240R, IRF241R IRF242R, IRF243R Avalanche Energy Rated N-Channel Power MOSFETs TERMINAL DIAGRAM 16A and 18A, 200V, 150V ros on = 0 . 1 and 0.220 Features: Single pulse avalanche energy rated SOA Is power-dlsslpation lim ited

Contextual Info: IRF240, IRF241, I i F 2 4 3 h a r r is S E M I C O N D U C T O R 16A and 18A, 200V and 150V, 0.18 and 0.22 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 16A and 18A, 200V and 150V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

Contextual Info: H a r r IRF244, IRF245, IRF246, IRF247 i s SEMIC0NDUCT0R 14A and 13A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 14A and 13A, 275V and 250V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

power MOSFET IRF240

Abstract: mosfet IRF240 IRF240 FET
Contextual Info: IRF240 MECHANICAL DATA Dimensions in mm inches 40.01 (1.575) Max. 26.67 (1.050) Max. 4.47 (0.176) Rad. 2 Pls. N–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS 22.23 (0.875) Max. 11.43 (0.450) 6.35 (0.250) 1.09 (0.043) 0.97 (0.038) Dia. 1.63 (0.064) 1.52 (0.060)

IRFZ40

Abstract: irfz42 IRFZ42N
Contextual Info: SCS-THOMSON IRFZ40 IRFZ42 [ * Q m i ( M ( 0M (g s N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS R DS(on 'd IRF240 50 V 0.028 ß 35 A IRF242 50 V 0.035 Q 35 A . VER YLO W RDS(on) • LOW DRIVE ENERGY FOR EASY DRIVE • HIGH TRANSCONDUCTANCE /Crss RATIO

mosfet to3

Abstract: IRF240
Contextual Info: IRF240 MECHANICAL DATA Dimensions in mm inches 40.01 (1.575) Max. 26.67 (1.050) Max. 4.47 (0.176) Rad. 2 Pls. N–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS 22.23 (0.875) Max. 11.43 (0.450) 6.35 (0.250) 1.09 (0.043) 0.97 (0.038) Dia. 1.63 (0.064) 1.52 (0.060)

mosfet IRF240

Abstract: IRF241 irf240 IRF243 power MOSFET IRF240
Contextual Info: MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA IRF240 IRF241 IRF243 Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS These TM O S Power FETs are designed for low voltage, high speed power sw itching applications such as sw itching regulators, converters, solenoid

Contextual Info: IRF24D Linear ICs dc-to-dc/Charge Pump Voltage Converter status Military/High-RelN Output Voltage Nominal V 24 Load Current Max. (A)208m Drop-Out Volt Max. P(D) Max. (W) Nom. Supp (V)8.0 Minimum Operating Temp (øC)-25 Maximum Operating Temp (øC)70 Package StyleModule

irf240

Contextual Info: HE D I «1055455 INTERNATIONAL OQÛ'JOIt, 3 | Data Sheet No. PD-9.370F RECTIFIER INTERNATIONAL RECTIFIER IÖR REPETITIVE AVALANCHE AND dv/dt RATED* HEXFET TRANSISTORS IRF240 IRF241 IRF242 IM-CHANNEL 200 Volt, 0.18 Ohm HEXFET T0-204AE TO-3 Hermetic Package

IRF240

Abstract: D88E IRF2402
Contextual Info: [? MiF3°KQ FUF IRF240.241 D88EN2,M2 18 AMPERES 200,150 VOLTS RDS ON = 0.18 n FIELD EFFECT POWER TRANSISTOR This series of N -C hannel Enhancem ent-m ode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­

irf240

Abstract: 1RF242 1RF240
Contextual Info: SILICONIX INC l f iE i> 0254735 oom tm 4 • IRF240/241 /242/243 C T 'S ilt e o n ix JmW ■ incorporated N-Channel Enhancement Mode Transistors TO-2Q4AE TO-3 B O T T O M VIEW PRODUCT SUMMARY PART NUM BER V (BR)DSS (V) r DS(ON) (O) Id (A) IRF240 200 0.18

irf246 N

Abstract: irf244 TA17423 VW250 pj 88 diode
Contextual Info: iH A R R is IRF244, IRF245, IRF246, IRF247 14A and 13A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 14A and 13A, 275V and 250V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

Contextual Info: IRF241R Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)150 V(BR)GSS (V)20 I(D) Max. (A)18 I(DM) Max. (A) Pulsed I(D)11 @Temp (øC)100 IDM Max (@25øC Amb)72 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)125 Minimum Operating Temp (øC)-55õ

IRF242

Abstract: IRF243
Contextual Info: FEF FIELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­ ness and reliability. IRF242.243 16 AMPERES »00,150 VOLTS

IRF224

Abstract: irf244 THOMSON DISTRIBUTOR 58e d IRF222 IRF352 irf362 THOMSON 58E THOMSON 58E CASE OUTLINE IRF220 IRF221
Contextual Info: THOMSON/ HtXhtl S flE D ISTRIBU TOR □ □T D • TCSK International m s Rectifier Power MOSFETs Hermetic Package TO-3 N-Channel Part Number IRF223 IRF221 IRF233 IRF231 IRF243 IRF241 IRF253 IRF251 IRF222 IRF220 IRF232 2N6758 IRF230 IRF242 IRF240 IRF252 IRF250

irf640

Abstract: IRF240 RF640 IRF 1640 IRF640 applications note PULSE GENERATOR IRF640-643 IRF241 IRF242 IRF243 IRF641
Contextual Info: I FAIRCHILD SEMICONDUCTOR fl4 dÈ J 3 4 b U 7 4 DDETflfiS □ IRF240-243/IRF640-643 T - 3 Ï - H N-Channel Power MOSFETs, 18 A, 150-200 V FA IR C H ILD A Schlumberger Company Power And Discrete Division Description TO-2Q4AE TO-220AB These devices are n-channel, enhancement mode, power

lg diode 88A

Abstract: IRF240SM
Contextual Info: im iF F i mi SEME IRF240SM LAB MECHANICAL DATA Dimensions in mm inches 11.5 («— ► 3.5 1 t ' k 1 r !1 2.0 N-CHANNEL POWER MOSFET -►i — 3.5 4 ¥ 200V V Dss 0.25 13.9A ^D(cont) 3.0 0 .1 8 0 0 ^DS(on) FEATURES 3 • HERMETICALLY SEALED SURFACE MOUNT PACKAGE