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    IPP13 Search Results

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    IPP13 Price and Stock

    Rochester Electronics LLC IPP139N08N3G

    N-CHANNEL POWER MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IPP139N08N3G Bulk 15,437 495
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    Rochester Electronics LLC IPP139N08N3GXKSA1

    N-CHANNEL POWER MOSFET
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    DigiKey IPP139N08N3GXKSA1 Bulk 632 632
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    Accessories for America BETGIPP13

    TEMPEREDGLASSIPADPRO12.92021
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BETGIPP13 Box 85 1
    • 1 $21.99
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    Pentair Equipment Protection - Hoffman CIPP13

    19IN PROFILES ONE SIDE 650
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    DigiKey CIPP13 Bulk 1
    • 1 $176.54
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    Infineon Technologies AG IPP13N03LB-G

    MOSFET N-CH 30V 30A TO220-3
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    DigiKey IPP13N03LB-G Tube
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    Find more IPP13 price and stock on Findchips.com

    IPP13 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IPP139N08N3 G Infineon Technologies N-Channel MOSFETs (20V - 250V); Package: PG-TO220-3; Package: TO-220; VDS (max): 80.0 V; RDS (on) (max) (@10V): 13.9 mOhm; RDS (on) (max) (@4.5V): -; ID (max): 45.0 A; Original PDF
    IPP13N03LBG Infineon Technologies FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 30A TO-220 Original PDF
    IPP13N03LBG Infineon Technologies OptiMOS 2 Power-Transistor Original PDF
    IPP13N03LB G Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 30A TO-220 Original PDF

    IPP13 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: IPP13N03LB G OptiMOS 2 Power-Transistor Product Summary Features V DS • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application 30 R DS on),max 12.8 ID 30 V mΩ A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)


    Original     		IPP13N03LB PG-TO220-3-1 Q67045-A5035 13N03LB PDF

    JESD22

    Abstract: No abstract text available
    Text: IPP13N03LB G OptiMOS 2 Power-Transistor Product Summary Features V DS • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application 30 R DS on),max 12.8 ID 30 V mΩ A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)


    Original     		IPP13N03LB PG-TO220-3-1 13N03LB JESD22 PDF

    marking eb5

    Abstract: diode marking eb5 IPP139N08N3 EB5 MARKING marking G9 i95B
    Text: IPP139N08N3 G IPI139N08N3 G IPB136N08N3 G "%&$!"# 3 Power-Transistor Product Summary Features 0 V 9H Q #451<6? B8978 6B5AE5>3 I CG9D389 >7 R  , ? >=1H, & Q ( @D9=9J54 D53 8>? <? 7I 6? B    3 ? >F5BD5BC J +&.   Y" ,- I9 6 Q  H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D ( & 


    Original     		IPP139N08N3 IPI139N08N3 IPB136N08N3 65AE5 marking eb5 diode marking eb5 EB5 MARKING marking G9 i95B PDF

    13N03

    Abstract: 13n03l JESD22 IPP13
    Text: IPP13N03LB G OptiMOS 2 Power-Transistor Product Summary Features V DS • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application 30 R DS on),max 12.8 ID 30 V mΩ A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)


    Original     		IPP13N03LB PG-TO220-3-1 13N03LB 13N03 13n03l JESD22 IPP13 PDF

    139n08n

    Abstract: D225 SMD SMD diode D45 136N08N MARKING d45 139N08 PG-TO IPP139N08N3 JESD22 PG-TO-220-3
    Text: IPP139N08N3 G IPI139N08N3 G IPB136N08N3 G OptiMOS TM 3 Power-Transistor Product Summary Features V DS • Ideal for high frequency switching 80 R DS(on),max (SMD) • Optimized technology for DC/DC converters V 13.6 ID mΩ 45 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		IPP139N08N3 IPI139N08N3 IPB136N08N3 PG-TO-220-3 PG-TO-262-3 PG-TO-263-3 139N08N 139n08n D225 SMD SMD diode D45 136N08N MARKING d45 139N08 PG-TO JESD22 PG-TO-220-3 PDF

    13N03

    Abstract: DSA003242
    Text: IPP13N03LB G OptiMOS 2 Power-Transistor Product Summary Features V DS • Ideal for high-frequency dc/dc converters R DS on ,max • Qualified according to JEDEC1) for target application 30 12.8 ID 30 V m: A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)


    Original     		IPP13N03LB PG-TO220-3 13N03LB 13N03 DSA003242 PDF

    Untitled

    Abstract: No abstract text available
    Text: IPP139N08N3 G IPI139N08N3 G IPB136N08N3 G  3 Power-Transistor Product Summary Features V 9H Q฀#451<฀6?B฀8978฀6B5AE5>3I฀CG9D389>7฀ 0 R ,?>=1H฀,& Q฀(@D9=9J54฀D538>?<?7I฀6?B฀ ฀3?>F5BD5BC J +&. I9 Y ,- 6 Q฀H35<<5>D฀71D5฀381B75฀H฀R 9H"[Z#฀@B?4E3D฀ (&


    Original     		IPP139N08N3 IPI139N08N3 IPB136N08N3 CG9D389 381B75à D5CD54 D1B75Dà 931D9? PDF

    139n08n

    Abstract: D225 SMD 136N08N IEC61249-2-21 IPP139N08N3 PG-TO-220-3 SMD F45 IPP139N08N3 G D225 Diode D45 1730
    Text: IPP139N08N3 G IPI139N08N3 G IPB136N08N3 G OptiMOS 3 Power-Transistor Product Summary Features 80 V DS • Ideal for high frequency switching 13.6 R DS on ,max (SMD) • Optimized technology for DC/DC converters V mΩ 45 ID A • Excellent gate charge x R DS(on) product (FOM)


    Original     		IPP139N08N3 IPI139N08N3 IPB136N08N3 IEC61249-2-21 PG-TO-220-3 PG-TO-262-3 PG-TO-263-3 139n08n D225 SMD 136N08N IEC61249-2-21 PG-TO-220-3 SMD F45 IPP139N08N3 G D225 Diode D45 1730 PDF

    13N03

    Abstract: No abstract text available
    Text: IPP13N03LB G OptiMOS 2 Power-Transistor Product Summary Features V DS • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application 30 R DS on),max 12.8 ID 30 V mΩ A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)


    Original     		IPP13N03LB PG-TO220-3-1 13N03LB 13N03 PDF

    S 170 MOSFET TRANSISTOR

    Abstract: 8203 dual mosfet S 170 MOSFET SOT323 MOSFET P MOSFET SWITCHING FREQUENCY IPS09N03LA P-channel power mosfet SO-8 TDA21102 mosfet all mosfet equivalent book
    Text: Low Voltage ICs – Discretes: OptiMOS , OptiMOS ®2 Power Management & Supply DC/DC Selection Guide www.infineon.com/power May 2006 Introduction D C / D C C O N V E R S I O N plays a critical role in today’s applications such as desktop and notebook computers, consumer equipment, e.g. DVD players and


    Original     		B152-H8203-G4-X-7600 S 170 MOSFET TRANSISTOR 8203 dual mosfet S 170 MOSFET SOT323 MOSFET P MOSFET SWITCHING FREQUENCY IPS09N03LA P-channel power mosfet SO-8 TDA21102 mosfet all mosfet equivalent book PDF

    igbt welding machine scheme

    Abstract: ikw40n120h3 aircon l1 smd diode schottky code marking SJ transistor marking code 12W SOT-23 24V application with ice3ar0680jz induction cooker FAULT FINDING IPW65R041 IGW40N60H3 SPW55N80C3
    Text: Power Management Selection Guide 2012 [ www.infineon.com/powermanagement ] [ www.infineon.com/PowerManagementICs ] We create Power Management We live Energy Efficiency Infineon, an innovation leader for Power Semiconductor and Energy Efficiency technologies is continually developing and


    Original     		PDF

    PX3544

    Abstract: PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J
    Text: Power Management Selection Guide – February 2010 [ www.infineon.com/PowerManagementDiscretes ] [ www.infineon.com/PowerManagementICs ] 2 Introduction The Leader in Energy Efficient Technologies for Power Management Efficient energy conversion is vital for an environmentally-friendly


    Original     		lead519 B152-H9345-G2-X-7600 PX3544 PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J PDF

    2N7002DM

    Abstract: kia 1117 3.3 VT8233 g3mx SMD M05 sot23 H052 W044 kia 1117 1.8 C85C39 c8252
    Text: - p. <11 « P.02 Cover Page P. 29 DC-DC +1.25V P4 478 P.30 DC-DC +2.5V P. 31 Battery P. 32 Charger 1 of 2 P.03 P4 4 78 - PWR & GND (2 of 2) P.04 NB VT8703 - Host, CRT and TV Interface P.05 NB VT8703 - Memory Interface P.06 NB VT8703 - LVDS, (1 of 3) (2 of 3)


    OCR Scan     		P4M266 LTC17D9-9 N355V1 33VSB 2N7002DM kia 1117 3.3 VT8233 g3mx SMD M05 sot23 H052 W044 kia 1117 1.8 C85C39 c8252 PDF

    Untitled

    Abstract: No abstract text available
    Text: H XILIN X XC3100A Field Programmable Gate Arrays June 1, 1996 Version 4.1 Product Specification Features Description • The XC3100A is a performance-optimized relative of the XC3000A and XC3100A families. While all families are foot­ print compatible, XC3100A family extends the typical sys­


    OCR Scan     		XC3100A XC3195A XC3000 XC3000, XC3000A, XC3000L XC3142A XC3164A XC3190A PDF

    TLE4957C

    Abstract: SLE66R35E7 SAK-XC2060M-104F80L AA ESD204 SAF-XC2268M-72F66L AA xc2336 tle7242 TLE5041 2EDL23N06 BTN7970
    Text: Ask Infineon. Get connected with the answers. Infineon offers its toll-free 0800/4001 service hotline as one central number, available 24/7 in English, Mandarin and German. Our global connection service goes way beyond standard switchboard services by offering qualified support on the phone. Call us!


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: fax id: 6010 PyfP PALCE20V8 Flash Erasable, Reprogrammable CMOS PAL Device Features • QSOP package available — 1 0 ,1 5 , and 25 ns com ’I version • Active pull-up on data input pins • Low power version 20V8L — 15, and 25 ns military/industrial versions


    OCR Scan     		PALCE20V8 20V8L) PALCE20V8 PDF

    986 t04

    Abstract: HIFN AG07 1155 PINmap 10SC1 AE26 AL01 AN32 B320 C4242
    Text: -to view this document. enable JavaScript and -JavaScript must be enabledHifn 5NP4G-B Network Please Processor - reopen the document. -Boundary Scan Description Language - Boundary Scan Description Language IEEE P1149.1b


    Original     		P1149 DDM-0056-00 986 t04 HIFN AG07 1155 PINmap 10SC1 AE26 AL01 AN32 B320 C4242 PDF