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    040n06n

    Abstract: 037N06N IEC61249-2-21 PG-TO220-3 PG-TO262-3
    Text: Type IPB037N06N3 G IPI040N06N3 G IPP040N06N3 G OptiMOS 3 Power-Transistor Product Summary Features V DS 60 V • for sync. rectification, drives and dc/dc SMPS R DS on ,max (SMD) 3.7 mΩ • Excellent gate charge x R DS(on) product (FOM) ID 90 A previous engineering


    Original     		PDF IPB037N06N3 IPI040N06N3 IPP040N06N3 IPP04xN06N IPI04xN06N IPB04xN06N IEC61249-2-21 040n06n 037N06N IEC61249-2-21 PG-TO220-3 PG-TO262-3

    040n06n

    Abstract: 037N06N 040n06 d90 smd JESD22 PG-TO220-3
    Text: IPB037N06N3 G Type IPI040N06N3 G IPP040N06N3 G OptiMOS 3 Power-Transistor Product Summary Features • for sync. rectification, drives and dc/dc SMPS • Excellent gate charge x R DS on product (FOM) V DS 60 V R DS(on),max (SMD) 3.7 mΩ ID 90 A • Very low on-resistance R DS(on)


    Original     		PDF IPB037N06N3 IPI040N06N3 IPP040N06N3 IPP04xN06N IPI04xN06N IPB04xN06N PG-TO263-3 040n06n 037N06N 040n06 d90 smd JESD22 PG-TO220-3