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    040N06 Search Results

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    040N06 Price and Stock

    Infineon Technologies AG BSZ040N06LS5ATMA1

    MOSFET N-CH 60V 40A TSDSON
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    DigiKey BSZ040N06LS5ATMA1 Reel 60,000 5,000
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    Avnet Americas BSZ040N06LS5ATMA1 Reel 55,000 8 Weeks 5,000
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    Mouser Electronics BSZ040N06LS5ATMA1 36,340
    • 1 $1.75
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    • 100 $0.896
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    Newark BSZ040N06LS5ATMA1 Cut Tape 11,519 5
    • 1 $1.74
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    BSZ040N06LS5ATMA1 Reel 5,000
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    RS BSZ040N06LS5ATMA1 Bulk 5 2 Weeks 1
    • 1 $1.78
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    Rochester Electronics BSZ040N06LS5ATMA1 155,615 1
    • 1 $0.735
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    Chip One Stop BSZ040N06LS5ATMA1 Cut Tape 9,205 0 Weeks, 1 Days 1
    • 1 $1.44
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    EBV Elektronik BSZ040N06LS5ATMA1 9 Weeks 5,000
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    Vyrian BSZ040N06LS5ATMA1 36,555
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    Rochester Electronics LLC FDP040N06

    MOSFET N-CH 60V 120A TO220-3
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    DigiKey FDP040N06 Tube 800 161
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    Rochester Electronics LLC FDI040N06

    MOSFET N-CH 60V 120A I2PAK
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    DigiKey FDI040N06 Tube 252 162
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    onsemi FDP040N06

    MOSFET N-CH 60V 120A TO220-3
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    DigiKey FDP040N06 Tube
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    onsemi FDI040N06

    MOSFET N-CH 60V 120A I2PAK
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    DigiKey FDI040N06 Tube
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    Find more 040N06 price and stock on Findchips.com

    040N06 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    040n06n

    Abstract: 037N06N IEC61249-2-21 PG-TO220-3 PG-TO262-3
    Text: Type IPB037N06N3 G 040N06N3 G 040N06N3 G OptiMOS 3 Power-Transistor Product Summary Features V DS 60 V • for sync. rectification, drives and dc/dc SMPS R DS on ,max (SMD) 3.7 mΩ • Excellent gate charge x R DS(on) product (FOM) ID 90 A previous engineering


    Original     		IPB037N06N3 IPI040N06N3 IPP040N06N3 IPP04xN06N IPI04xN06N IPB04xN06N IEC61249-2-21 040n06n 037N06N IEC61249-2-21 PG-TO220-3 PG-TO262-3 PDF

    Untitled

    Abstract: No abstract text available
    Text: Type 040N06N OptiMOSTM Power-Transistor Features Product Summary • Optimized for high performance SMPS, e.g. sync. rec. VDS 60 V • 100% avalanche tested RDS on ,max 4.0 mW • Superior thermal resistance ID 80 A • N-channel • Qualified according to JEDEC for target applications


    Original     		IPP040N06N IEC61249-2-21 PG-TO220-3 040N06N PDF

    040n06n

    Abstract: No abstract text available
    Text: Type 040N06N OptiMOSTM Power-Transistor Features Product Summary • Optimized for high performance SMPS, e.g. sync. rec. • 100% avalanche tested • Superior thermal resistance • N-channel 1 • Qualified according to JEDEC for target applications


    Original     		IPP040N06N IEC61249-2-21 PG-TO220-3 040N06N 50K/W 040n06n PDF

    Untitled

    Abstract: No abstract text available
    Text: MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSTMPower-Transistor,60V 040N06N DataSheet Rev.2.1 Final PowerManagement&Multimarket OptiMOSTMPower-Transistor,60V 040N06N 1Description TO-220-FP Features • .


    Original     		IPA040N06N O-220-FP IEC61249-2-21 PDF

    040n06n

    Abstract: 037N06N 040n06 d90 smd JESD22 PG-TO220-3
    Text: IPB037N06N3 G Type 040N06N3 G 040N06N3 G OptiMOS 3 Power-Transistor Product Summary Features • for sync. rectification, drives and dc/dc SMPS • Excellent gate charge x R DS on product (FOM) V DS 60 V R DS(on),max (SMD) 3.7 mΩ ID 90 A • Very low on-resistance R DS(on)


    Original     		IPB037N06N3 IPI040N06N3 IPP040N06N3 IPP04xN06N IPI04xN06N IPB04xN06N PG-TO263-3 040n06n 037N06N 040n06 d90 smd JESD22 PG-TO220-3 PDF

    040n06n

    Abstract: No abstract text available
    Text: Type 040N06N OptiMOSTM Power-Transistor Features Product Summary • Optimized for high performance SMPS, e.g. sync. rec. VDS 60 V • 100% avalanche tested RDS on ,max 4.0 mW • Superior thermal resistance ID 80 A • N-channel 1) • Qualified according to JEDEC for target applications


    Original     		IPP040N06N IEC61249-2-21 PG-TO220-3 040N06N 50K/W 040n06n PDF