INVENTER Search Results

Contextual Info: SMD Schottky Barrier Rectifiers CDBB520-G Thru. CDBB5100-G Reverse Voltage: 20 to 100 Volts Forward Current: 5.0 Amp RoHS Device DO-214AA SMB Features -Ideal for surface mount applications. -For use in low voltage, high frequency inventers. 0.180(4.57) 0.160(4.06)

LVP640P

Abstract: LVP640 N_CHANNEL MOSFET 100V MOSFET mosfet 100a 200v
Contextual Info: LVP640P N-Channel 200V Power MOSFET Features: ‧ Avalanche Rugged Technology ‧ Rugged Gate Oxide Technology ‧ High di/dt Capability ‧ Improved Gate Charge Application ‧ DC-DC Converters ‧ UPS & Monitors ‧ High Power Switching ‧ Car Inventer

Contextual Info: SMD Schottky Barrier Rectifiers CDBB520-HF Thru. CDBB5100-HF Reverse Voltage: 20 to 100 Volts Forward Current: 5.0 Amp RoHS Device Halogen Free DO-214AA SMB Features -Ideal for surface mount applications. 0.180(4.57) 0.160(4.06) -For use in low voltage, high frequency inventers.

Contextual Info: SMD Schottky Barrier Rectifiers CDBB520-G Thru. CDBB5100-G Reverse Voltage: 20 to 100 Volts Forward Current: 5.0 Amp RoHS Device DO-214AA SMB Features -Ideal for surface mount applications. -For use in low voltage, high frequency inventers. 0.180(4.57) 0.160(4.06)

Contextual Info: SMD Schottky Barrier Rectifiers CDBB520-HF Thru. CDBB5100-HF Reverse Voltage: 20 to 100 Volts Forward Current: 5.0 Amp RoHS Device Halogen Free DO-214AA SMB Features -Ideal for surface mount applications. 0.180(4.57) 0.160(4.06) -For use in low voltage, high frequency inventers.

6045pt

Abstract: MBR6050PT-60100PT PT-60 MBR60XXPT
Contextual Info: MBR6035PT - MBR60100PT CREAT BY ART Pb 60.0AMPS. Schottky Barrier Rectifiers TO-3P/TO-247AD RoHS COMPLIANCE Features — UL Recognized File # E-326243 — Plastic material used carriers Underwriters Laboratory Classification 94V-0 — Metal silicon junction, majority carrier conduction

MBR40200

Abstract: MBR 40150 MBR40150 4045 pt
Contextual Info: MBR4035PT - MBR40200PT CREAT BY ART Pb 40.0AMPS. Schottky Barrier Rectifiers TO-3P/TO-247AD RoHS COMPLIANCE Features — UL Recognized File # E-326243 — Plastic material used carriers Underwriters Laboratory Classification 94V-0 — Metal silicon junction, majority carrier conduction

CD4514BMS

Abstract: CD4515BMS MC14514 MC14515 inventer
Contextual Info: CD4514BMS CD4515BMS CMOS 4-Bit Latch/4-to-16 Line Decoders July 14, 2006 Features Pinout • High-Voltage Types 20-Volt Rating CD4514BMS, CD4515BMS TOP VIEW • CD4514BMS Output “High” on Select • CD4515BMS Output “Low” on Select 24 VDD STROBE 1

Contextual Info: CC24_ _500N CN24_ _500N Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Super Fast Recovery Dual Diode Modules 50 Amperes/300-600 Volts H J A B J C G M H J (3 TYP.) N - DIA. R - M4 THD (3 TYP.) D Q L (2 TYP.) Q K E F P CC

LVP640

Abstract: mosfet 100a 200v 200V power mosfet 200 A 200V mosfet 100a mosfet
Contextual Info: LVP640 N-Channel 200V Power MOSFET Features: Avalanche Rugged Technology Rugged Gate Oxide Technology High di/dt Capability Improved Gate Charge Application BVDSS = 200 V, DC-DC Converters UPS & Monitors RDS ON = 0.18Ω, Typ = 0.15Ω High Power Switching

Contextual Info: TOSHIBA INTELLIGENT GTR MODULE MIG100Q201H PRELIMINARY High Power Switching Applications Motor Control Applications • Integrates Inverter, Brake Power Circuits & Control Circuits IGBT drive units, Protection units for Over-Current, UnderVoltage & Over-Temperature in One Package.

Contextual Info: TOSHIBA INTELLIGENT GTR MODULE MIG75J201H PRELIMINARY High Power Switching Applications Motor Control Applications • Integrates Inverter, Brake Power Circuits & Control Circuits IGBT drive units, Protection units for Over-Current, UnderVoltage & Over-Temperature in One Package.

Contextual Info: TOSHIBA INTELLIGENT GTR MODULE MIG75Q201H PRELIMINARY High Power Switching Applications Motor Control Applications • Integrates Inverter, Brake Power Circuits & Control Circuits IGBT drive units, Protection units for Over-Current, UnderVoltage & Over-Temperature in One Package.

SS24

Abstract: DO-214AA diode SS22 SS23 SS25 SS26 SS28 SS29 SS210
Contextual Info: MASTER INSTRUMENT CORPORATION SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER SS22 THRU SS210 VOLTAGE RANGE Forward Current FEATURES l For surface mount applications l Metal-Semiconductor Junction with Guarding l Epitaxial Construction l Metal-Semiconductor Junction with Guarding

Contextual Info: HV 3 kV LCD Vishay BCcomponents Ceramic Disc Capacitors Class 1, 3 kV DC FEATURES D • Low losses • High stability • High capacitance in small size tangent line SH • Kinked (preferred) or straight leads • Lead (Pb)-free available. APPLICATIONS • DC high voltage

4.5 digit lcd

Contextual Info: HV 3 kV LCD Vishay BCcomponents Ceramic Disc Capacitors Class 1, 3 kV DC FEATURES D • Low losses • High stability • High capacitance in small size tangent line SH • Kinked (preferred) or straight leads • Lead (Pb)-free available. APPLICATIONS • DC high voltage

1C010

Abstract: ci 94vo 1D04C DA1C 1002G HERF1001G HERF1008G 1D07 PABI MARKING 1D07G
Contextual Info: s HERF1001G - HERF1008G TAIWAN SEMICONDUCTOR Isolated 10.0 AM PS. Glass Passivated High Efficient Rectifiers ITO-22DAB RoHS COMPLIANCE Features <• Glass pEssiveted ch ip ju nction. <• ■ir High currant capability High reliability h igh su ipc currcn t capa bill ly

APM4472

Abstract: A102 APM4472K STD-020C
Contextual Info: APM4472K N-Channel Enhancement Mode MOSFET Features • Pin Description 40V/12A, RDS ON = 7.5mΩ(typ.) @ VGS= 10V • • • • RDS(ON)= 10.5mΩ(typ.) @ VGS= 4.5V Super High Dense Cell Design Avalanche Rated Reliable and Rugged Top View of SOP − 8 Lead Free Available (RoHS Compliant)

Contextual Info: SRT12 - SRT115 creat by art Pb 1.0AMP. Schottky Barrier Rectifiers TS-1 RoHS COMPLIANCE Features — Plastic material used carries Underwriters Laboratory Classification 94V-0 — Metal silicon junction, majority carrier conduction — Low power loss, high efficiency

CLEVO

Abstract: VT6307S CLEVO M550V a23 m1 106v 27p Z1212 Clevo Notebook Computer RSS090 ICS954226AG rtl811 Preface Notebook Computer
Contextual Info: Preface Notebook Computer M550G/M540G Service Manual Preface I Preface Notice The company reserves the right to revise this publication or to change its contents without notice. Information contained herein is for reference only and does not constitute a commitment on the part of the manufacturer or any subsequent vendor. They assume no responsibility or liability for any errors or inaccuracies that may appear in this publication nor are

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Abstract: nforce4 ultra nForce4 sli CLEVO nvidia nforce4 TPS2231 rqa130n03 nforce4 subwoofer preamp diagram 6600m
Contextual Info: Preface Notebook Computer M590K Service Manual Preface I Preface Notice The company reserves the right to revise this publication or to change its contents without notice. Information contained herein is for reference only and does not constitute a commitment on the part of the manufacturer or any subsequent vendor. They assume no responsibility or liability for any errors or inaccuracies that may appear in this publication nor are

MBR 30100 CT

Contextual Info: MBR3035CT - MBR30150CT 30.0AMPS. Schottky Barrier Rectifiers TO-220AB Features — Plastic material used carriers Underwriters Laboratory Classification 94V-0 — Metal silicon junction, majority carrier conduction — Low power loss, high efficiency — High current capability, low forward voltage drop

CD4514BMS

Abstract: CD4515BMS IOH15 MC14514 MC14515 BIT 3195 G CD451
Contextual Info: CD4514BMS CD4515BMS S em iconductor CMOS 4-Bit Latch/4-to-16 Line Decoders December 1992 Features Pinout High-Voltage Types 20-Volt Rating CD4514BM S, CD4515BM S TOP VIEW CD4514BMS Output “High” on Select CD4515BMS Output “Low” on Select S TR O B E | T

Contextual Info: MBR3035CT - MBR30150CT 30.0AMPS. Schottky Barrier Rectifiers TO-220AB Features — Plastic material used carriers Underwriters Laboratory Classification 94V-0 — Metal silicon junction, majority carrier conduction — Low power loss, high efficiency — High current capability, low forward voltage drop