INTERNATIONAL RECTIFIER TRANSISTOR Search Results

IRGPC56

Contextual Info: INTERNATIONAL RECTIFIER SbE D • 4fl5S45S OOlDbaT 1 ■ Data Sheet No. PD<9.662 T - 3^-63 \. INSULATED GATE BIPOLAR TRANSISTOR International Rectifier IRGPC56 600V, 7SA 600V, 75A, TO-247AC IGBT FEATURES International Rectifier’s IRG series of Insulated Gate

IRGPC46

Abstract: 10a 100v bipolar transistor mosfet induction heater S101 SS452 VQE 21 d
Contextual Info: INTERNATIONAL RECTIFIER 4055452 OOlOba? 2 2bE D Data Sheet No. PD-9.663 INSULATED GATE BIPOLAR TRANSISTOR T- 3 °[ -03 International g*»]Rectifier IRGPC46 BOOV, BO A FEATURES 600V, 60A, TO-247AC IGBT International Rectifier’s IRG series of Insulated Gate

Q405

Abstract: vqe 24 d q405 transistor vqe 23 IRGBC26 TO220AB IGBT t303 3i03 a y8e
Contextual Info: INTERNATIONAL RECTIFIER EbE D 4055455 00105=11 7 • Data Sheet No. PD-9.669 T-3Ì-03 International Usi Rectifier INSULATED GATE BIPOLAR TRANSISTOR IRGBCS6 600V, 19A FEATURES 600V, 19A, TO-220AB IGBT International Rectifier’s IR G series o f Insulated Gate

Contextual Info: INTERNATIONAL RECTIFIER 2t>E D • HflSS4S2 QQ1DST7 S ■ Data Sheet No. PD-9.619A T-3^-03 INSULATED GATE BIPOLAR TRANSISTOR International I “ R !Rectifier IRGBC30 600V, S3A FEATURES 600V, 23A, TO-220AB IGBT International Rectifier’s IRG series of Insulated Gate

C528 transistors

Abstract: C528 DIODE
Contextual Info: INTERNATIONAL RECTIFIER 11E D | 4ÖSS4SS 0000774 Data Sheet No. PD-9.445A INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER N-CHAIMNEL POWER MOSFETs TO-247AC PACKAGE 400 Volt, 0.30 Ohm HEXFET TO-247AC TO-3P Plastic Package R IRFP350 IRFP351 IRFP35S IRFP353

c628 DIODE

Abstract: diode c626 DIODE c629 diode c631 c632 DIODE c630 diode 3g50 irf 2030 IRFPG52 diode c630
Contextual Info: INTERNATIONAL RECTIFIER HE D I 4flSS4SE Data Sheet No. PD-9.543A INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER I 0 R REPETITIVE AVALANCHE AND dv/dt RATED HEXFETTRANSISTORS IRFPG5G IRFPG52 N-CHANNEL Product Summary 1000 Volt, 2.0 Ohm HEXFET TO-247AC TO-3P Plastic Package

irgpc50

Contextual Info: INTERNATIONAL RECTIFIER 2bE D • 4655455 001Db33 fl ■ Data Sheet No. PD-9.664 T-3R-C>3 INSULATED GATE BIPOLAR TRANSISTOR International iI<?RlRectifier IRGPC50 600V, 55A 600V, 55A, TO-247AC IGBT FEATURES International Rectifier’s IRG series of Insulated Gate

1117s

Abstract: transistor wc 2C vqe 24 d TO220AB IGBT PHPI IRGBC36
Contextual Info: INTERNATIONAL RECTIFIER 4Ö5S4S2 00l0bQ3 T • 2t.E D Data Sheet No. PD-9.668 • 7 3*?-03 - - International ÜH Rectifier INSULATED GATE BIPOLAR TRANSISTOR BOOV, 34A FEATURES 600V, 34A, TO-220AB IGBT International R ectifier’s IR G series of Insulated G ate

TR C458

Abstract: transistors c458 IRFP040 IRFP042 C458 C C459 TIL 220 L740 c458 c455
Contextual Info: INTERNATIONAL RECTIFIER INTERNATIONAL H E D I 4Ö55455 T-39-13 Data Sheet No. PD-9.463A RECTIFIER INTERNATIONAL RECTIFIER HEXFET TRANSISTORS I« R IRFP040 IRFPQ42 N-CHANNEL POWER MOSFETs TO-S47AC PACKAGE Product Summary 50 Volt, 0.028 Ohm, HEXFET TO-247AC TO-3P Plastic Package

IRGAC50U

Abstract: transistor G46 IGBT g48 ge 142 bt 34w
Contextual Info: International Rectifier PD-9.726A IRGAC50U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den­ sities than comparable bipolar transistors, while

ir*c30ud

Abstract: IRGMC30U
Contextual Info: International Ira*]Rectifier PD-9.715A IRGMC30U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den­ sities than comparable bipolar transistors, while

g371

Abstract: IRFF330 IRFF331 IRFF332 IRFF333 510 MOSFET EC07 CIRCUIT g371
Contextual Info: HE D | MöSSMSa QGCHB'ìM 0 | INTERNATIONAL Data Sheet No. PD-9.357E _ T-39-Û9 RECTIFIER INTERNATIONAL RECTIFIER HEXFET TRANSISTORS IÖR IRFF330 IRFF331 N-CHAIUNEL POWER MOSFETs TO-39 PACKAGE IRFF33S IRFF333 400 Volt, 1.0 Ohm HEXFET Features: The HEXFET technology is the key to International

IRGBC-20

Contextual Info: INTERNATIONAL RECTIFIER 2bE D • ^ 5 5 4 5 2 QDlOSflS 1 ■ Data Sheet No. PD-9.626A T- INSULATED GATE BIPOLAR TRANSISTOR -03 International @ ^ 3 Rectifier IR G B C SO GOOV, 1 3 A FEATURES 600V, 13A, T0-220AB IGBT International Rectifier's IRG series of Insulated Gate

Contextual Info: International ! r]Rectifier PD-9.718A IRGMC50F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den­ sities than comparable bipolar transistors, while

IR 92 0151

Abstract: IRGAC40F IRGAC40 transistor g23
Contextual Info: International TOR PD-9.723A ]Rectifier IRGAC40F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den­ sities than comparable bipolar transistors, while

2sc 1740 TRANSISTOR equivalent

Abstract: 40HFL60 IRGMC40F 480V1
Contextual Info: International Hg] Rectifier PD-9.716A IRGMC40F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den­ sities than comparable bipolar transistors, while

100-C

Abstract: IRGMC30F 9714A
Contextual Info: International ioR Rectifier PD-9.714A IRGMC30F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den­ sities than comparable bipolar transistors, while

IRGAC50F

Abstract: G37 IC J3060 transistor g35 ecs g41 IRGAC50
Contextual Info: International lü ] Rectifier PD-9.725A IRGAC50F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den­ sities than comparable bipolar transistors, while

transistor 9721

Abstract: 9721 mosfet to3
Contextual Info: International S Rectifier PD-9.721 A IRGAC30F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den­ sities than comparable bipolar transistors, while

IRGMC50F

Abstract: IRGMC50FD IRGMC50FU 39AF
Contextual Info: International S S Rectifier PD-9.718A IRGMC50F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den­ sities than comparable bipolar transistors, while

T3D 87

Abstract: t3d 99 G-100 IRGMC50U
Contextual Info: International [^Rectifier PD-9.719A IRGMC50U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT D escription Product Sum m ary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den­ sities than comparable bipolar transistors, while

f422

Abstract: transistor f422 tr f422 G-377 IRFF423 358E IRFF420 IRFF421 IRFF422 420 Diode 2ba
Contextual Info: HE D I 4055452 INTERNATIONAL 0001400 2 | Data Sheet No. PD-9.358E RECTIFIER INTERNATIONAL RECTIFIER TOR T-39-09 HEXFET TRANSISTORS IRFF4SQ IRFF421 N-CHANNEL POWER MOSFETs TO-3S PACKAGE Q [I IRFF4SS IRFF4S3 500 Volt, 3.0 Ohm HEXFET Features: T he HEXFET® technology is the key to International

Contextual Info: International S Rectifier PD-9.715A IRGMC30U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Description Product Summary Insulated G ate Bipolar Transistors IGBTs from International Rectifier have higher current d en ­ sities than com parable bipolar transistors, while

h253

Abstract: IRHM8450 T600 12 23 2N7270 IRHM7450 iA109 SN7570
Contextual Info: Data Sheet No. PD-9.673B INTERNATIONAL RECTIFIER HEXFET TRANSISTORS IRHM7450 IRHM8450 N-CHANNEL SN7S70 JANSRSN7570 JANSHSN7S70 _MEGA RAD HARD 500 Volt, 0.45Q, MEGA RAD HARD HEXFET International Rectifier’s M E G A RAD HARD Technology HEXFETs