IRGPC50 Search Results

DSA003127

Abstract: C-38 IRGPC50S IGBT IRGPC50S
Contextual Info: PD - 9.694A IRGPC50S INSULATED GATE BIPOLAR TRANSISTOR Features Standard Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for line frequency operation to 400Hz See Fig. 1 for Current vs. Frequency curve VCES = 600V VCE(sat) ≤ 1.6V

irgph50ud

Abstract: IRGPH50u C732 TRANSISTOR transistor C732
Contextual Info: International îor Rectifier PD - 9.802A IRGPC50UD2 UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features V ces = 600 V • Switching-loss rating includes all "tail" losses • HEXFRED soft ultrafast diodes

Contextual Info: PRELIMINARY DATASHEET NO. PD-9.802 International S ] Rectifier IRGPC50UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast Co-Pack IGBT • Latch-proof • Simple gate drive • High operating frequency • Switching-loss rating includes

Contextual Info: International BUlRectifier IRGPC50S INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT PD - 9.694A Features • Switching-loss rating includes all "tail" losses • Optimized for line frequency operation to 400Hz See Fig. 1 for Current vs. Frequency curve

transistor c331

Abstract: C 331 Transistor c331 transistor transistor c 331 IRGPC50M IGBT 500V 35A c331 ses
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1024 IRGPC50M INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated Fast IGBT C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to

B85 diode

Abstract: DIODE B89 IRGPC50KD2
Contextual Info: 09/01/94 1 1 ;IS i 57 I n t e r n a t 'I R e c tifie r - > Product In fo rn ai ion Page 002 P D - 9.1123 International S Rectifier IRGPC50KD2 Short Circuit Rated UHraFasl CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFASI SOF T RECOVERY DIODE Features

irgpc50f

Contextual Info: PD - 9.695A International l ü Rectifier IRGPC50F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz S ee Fig. 1 for Current vs. Frequency

Hirect

Abstract: IRGPC50U c687
Contextual Info: International ^Rectifier PD - 9.685A IRGPC50U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve Vces = 600V

transistor C732

Abstract: C732 C732 TRANSISTOR c729 diode c729 IRGPC50UD2 IRGPH50U diode C726 C731 transistor irgph50ud
Contextual Info: PD - 9.802A IRGPC50UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features C VCES = 600V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for high operating frequency over 5kHz

IRGPC50U

Abstract: C687 C688
Contextual Info: International l i i Rectifier PD - 9.685A IRGPC50U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve

IRGPC50S

Contextual Info: PD - 9.694A International [1ÓRRectifier IRGPC50S INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT Features c • Switchlng-loss rating includes all “tail" losses • Optimized for line frequency operation to 400Hz See Fig. 1 for Current vs. Frequency curve

C959

Abstract: transistor c956 C956 IRGPC50KD2 c954 30A to-247ac Diode IOR 10 dc
Contextual Info: P D - 9.1123 International »»Rectifier IRGPC50KD2 Short Circuit Rated UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features c V ces = 600V • Short circuit rated -10|js @ 125°C, VQE = 15V • Switching-loss rating includes all "tail" losses

IC C399

Abstract: IRGPC50MD2 c406 600V 25A Ultrafast Diode NS100
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1145A IRGPC50MD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated Fast CoPack IGBT Features C VCES = 600V • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses

IRGPC50FD2

Contextual Info: PD - 9.800 International li«] Rectifier IRGPC50FD2 Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE _ Features • Switching-loss rating includes all "tail" losses • HEXFRED soft ultrafast diodes • Optimized for medium operating frequency 1 to

transistor C732

Abstract: diode c729 diode C725 C732 TRANSISTOR transistor c731 diode C728 diode C726 IRGPH50U transistor C730 C732
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.802A IRGPC50UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features C VCES = 600V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes

Contextual Info: PD-9.1145A kitemational kjr]Rectifier IRGPC50MD2 Short Circuit Rated Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features V c e s = 600V • Short circuit rated -10ps @125°C, VGE = 15V • Switching-loss rating includes ail "tail" losses

Contextual Info: P D - 9.1123 International ^Rectifier IRGPC50KD2 Short Circuit Rated UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Vces = 600V • Short circuit rated -10ps @125°C, VGe = 15V • Switching-loss rating includes all "tail" losses

c331 transistor

Contextual Info: international ri“ HlRectifier P D -9.1024 IRGPC50M INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features • Short circuit rated - 10ps @ 125°C, V qe = 15V • Switching-ioss rating includes all 'tail" losses • Optimized for medium operating frequency 1 to

IRGPC50S

Abstract: C-38 TRANSISTOR ES 8 C36
Contextual Info: PD - 9.694A IRGPC50S INSULATED GATE BIPOLAR TRANSISTOR Features Standard Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for line frequency operation to 400Hz See Fig. 1 for Current vs. Frequency curve VCES = 600V VCE(sat) ≤ 1.6V

600V 25A Ultrafast Diode

Abstract: IRGPC50FD2 IRGPC50FD 600v 20a IGBT transistor c128 current rating igbt 600v 20a
Contextual Info: PD - 9.800 IRGPC50FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features C • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for medium operating frequency 1 to

1RGPC50U

Abstract: IRGPC50U
Contextual Info: International S Rectifier PD - 9.685A IRGPC50U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve

tsc 894 transistor

Abstract: mosfet 600V 30A c894
Contextual Info: kitemational logRectifier P D - 9.1034 IRGPC50K Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features : j • Short circuit rated - 10ps @ 125°C, V ge = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz,

c128 transistor

Abstract: 600V 25A Ultrafast Diode IRGPC50FD2 transistor c128 transistor c128 current rating
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.800 IRGPC50FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features C • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for medium operating frequency 1 to

IRGPC50F

Contextual Info: PD - 9.695A IRGPC50F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve VCES = 600V VCE(sat) ≤ 1.7V