INT-A-PAK DUAL WEIGHT Search Results
INT-A-PAK DUAL WEIGHT Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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TC74HC123AF |
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CMOS Logic IC, Dual Monostable Multivibrator, SOP16 |
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TCWA1225G |
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High Power Switch / SPDT / WCSP14 |
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TDS4B212MX |
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PCI Express switch, 2 Differential Channel, 2:1 multiplexer/1:2 demultiplexer, SPDT, XQFN16 |
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TDS4A212MX |
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PCI Express switch, 2 Differential Channel, 2:1 multiplexer/1:2 demultiplexer, SPDT, XQFN16 |
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96L02FM/B |
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96L02 -Dual Resettable Multivibrator |
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INT-A-PAK DUAL WEIGHT Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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IRF 902
Abstract: GA600GD25S CGC SWITCH IGBT DRIVE 50V 300A IGBT 1000A 150V150V
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50071C GA600GD25S Collecto18. IRF 902 GA600GD25S CGC SWITCH IGBT DRIVE 50V 300A IGBT 1000A 150V150V | |
GA600HD25S
Abstract: igbt "internal thermistor" int-a-pak
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4341A GA600HD25S GA600HD25S igbt "internal thermistor" int-a-pak | |
Contextual Info: PD -50051D GA400TD25S "HALF-BRIDGE" IGBT DUAL INT-A-PAK Standard Speed IGBT Features VCES = 250V • Generation 4 IGBT technology • Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHz • Very low conduction and switching losses |
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-50051D GA400TD25S 10kHz 85ded 08-Mar-07 | |
diod t4
Abstract: p j 85 diod GA400TD25S t4 diod INT-A-PAK Dual weight diod 800A
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-50051D GA400TD25S 10kHz diod t4 p j 85 diod GA400TD25S t4 diod INT-A-PAK Dual weight diod 800A | |
GA400TD25SContextual Info: PD -50051D GA400TD25S "HALF-BRIDGE" IGBT DUAL INT-A-PAK Standard Speed IGBT Features VCES = 250V • Generation 4 IGBT technology • Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHz • Very low conduction and switching losses |
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-50051D GA400TD25S 10kHz 12-Mar-07 GA400TD25S | |
Contextual Info: GA400TD60S www.vishay.com Vishay Semiconductors Dual INT-A-PAK Low Profile “Half Bridge” Standard Speed IGBT , 400 A FEATURES • Gen 4 IGBT technology • Standard: optimized for hard switching speed • Low VCE(on) • Square RBSOA • HEXFRED antiparallel diode with ultrasoft reverse |
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GA400TD60S E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: VS-GP400TD60S www.vishay.com Vishay Semiconductors Dual INT-A-PAK Low Profile “Half Bridge” Trench PT IGBT , 400 A Proprietary Vishay IGBT Silicon “L Series” FEATURES • Trench PT IGBT technology • Low VCE(on) • Square RBSOA • HEXFRED antiparallel diode with ultrasoft reverse |
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VS-GP400TD60S 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: GA300TD60S www.vishay.com Vishay Semiconductors Dual INT-A-PAK Low Profile “Half Bridge” Standard Speed IGBT , 300 A FEATURES • Gen 4 IGBT technology • Standard: optimized for hard switching speed • Low VCE(on) • Square RBSOA • HEXFRED antiparallel diode with ultrasoft reverse |
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GA300TD60S E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: VS-GP300TD60S www.vishay.com Vishay Semiconductors Dual INT-A-PAK Low Profile “Half Bridge” Trench PT IGBT , 300 A Proprietary Vishay IGBT Silicon “L Series” FEATURES • Trench PT IGBT technology • Low VCE(on) • Square RBSOA • HEXFRED antiparallel diode with ultrasoft reverse |
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VS-GP300TD60S 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
DIODE 1439
Abstract: 60 27755 GA300TD60U
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-50057E GA300TD60U DIODE 1439 60 27755 GA300TD60U | |
la 4830 ic
Abstract: LTA 902 1559 GE GA500TD60U Dual INT-A-PAK weight
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50048D GA500TD60U la 4830 ic LTA 902 1559 GE GA500TD60U Dual INT-A-PAK weight | |
GA200TD120UContextual Info: PD - 50061D GA200TD120U "HALF-BRIDGE" IGBT DUAL INT-A-PAK Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses |
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50061D GA200TD120U GA200TD120U | |
GA400TD60SContextual Info: GA400TD60S Vishay Semiconductors Dual INT-A-PAK Low Profile "Half-Bridge" Standard Speed IGBT , 400 A FEATURES • Generation 4 IGBT technology • Standard: Optimized for hard switching speed DC to 1 kHz • Low VCE(on) • Square RBSOA • HEXFRED antiparallel diode with ultrasoft reverse |
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GA400TD60S E78996 2002/95/EC 11-Mar-11 GA400TD60S | |
Contextual Info: GA400TD60S Vishay Semiconductors Dual INT-A-PAK Low Profile "Half-Bridge" Standard Speed IGBT , 400 A FEATURES • Generation 4 IGBT technology • Standard: Optimized for hard switching speed DC to 1 kHz • Low VCE(on) • Square RBSOA • HEXFRED antiparallel diode with ultrasoft reverse |
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GA400TD60S E78996 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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Contextual Info: GA400TD60S Vishay Semiconductors Dual INT-A-PAK Low Profile "Half-Bridge" Standard Speed IGBT , 400 A FEATURES • Generation 4 IGBT technology • Standard: Optimized for hard switching speed DC to 1 kHz • Low VCE(on) • Square RBSOA • HEXFRED antiparallel diode with ultrasoft reverse |
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GA400TD60S E78996 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
GA300TD60SContextual Info: GA300TD60S Vishay Semiconductors Dual INT-A-PAK Low Profile "Half-Bridge" Standard Speed IGBT , 300 A FEATURES • Generation 4 IGBT technology • Standard: Optimized for hard switching speed DC to 1 kHz • Low VCE(on) • Square RBSOA • HEXFRED antiparallel diode with ultrasoft reverse |
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GA300TD60S E78996 2002/95/EC 11-Mar-11 GA300TD60S | |
40136
Abstract: GA400TD60U
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50059D GA400TD60U 40136 GA400TD60U | |
GA300TD60sContextual Info: GA300TD60S Vishay Semiconductors Dual INT-A-PAK Low Profile "Half-Bridge" Standard Speed IGBT , 300 A FEATURES • Generation 4 IGBT technology • Standard: Optimized for hard switching speed DC to 1 kHz • Low VCE(on) • Square RBSOA • HEXFRED antiparallel diode with ultrasoft reverse |
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GA300TD60S E78996 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 GA300TD60s | |
SM 4151Contextual Info: SCHOTTKY BARRIER DIODE i SQUARE - C 25T02Q L C 25T03Q L 2 7 .7 A /2 0 — 30V PAK I i ♦ llj.0 l.4 irl y fr3 7 K i lil.ll.7 y - i I FEA TU RES - 1- = p \ ô ï’, ° Similar to T O - 263AB Case, Surface Mounting Device 1.4 0551 1,0C ° Dual Diodes - Cathode Common |
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25T02Q 25T03Q 263AB SM 4151 | |
vim-503-dp
Abstract: LD-H7960A ICL7129ACPL ICL7129ACPL 2 diode KIV 63 MAX7129 5 DIGIT SINGLE CHIP DIGITAL MULTIMETER ICL7129A panel-meter 50hz oscillator inverter Circuit diagram
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ICL7129A/MAX7129 ICL7129A/ MAX7129 0000V ICL7129A! MAX7129 vim-503-dp LD-H7960A ICL7129ACPL ICL7129ACPL 2 diode KIV 63 5 DIGIT SINGLE CHIP DIGITAL MULTIMETER ICL7129A panel-meter 50hz oscillator inverter Circuit diagram | |
LE79Q2281
Abstract: 1N6761-1 2N2369AU 2N2907AUB BR17 datasheet transistor SI 6822 Dimming LED aplications Dimming LED Driver aplications GC4600 IC ZL70572
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PIC16F72 inverter ups
Abstract: UPS inverter PIC16F72 PIC16F676 inverter hex code 16F877 with sd-card and lcd project circuit diagram wireless spy camera NH82801GB xmega-a4 online ups service manual back-ups ES 500 ARM LPC2148 INTERFACING WITH RFID circuit diagram realtek rtd 1186
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element-14 element14. element14, PIC16F72 inverter ups UPS inverter PIC16F72 PIC16F676 inverter hex code 16F877 with sd-card and lcd project circuit diagram wireless spy camera NH82801GB xmega-a4 online ups service manual back-ups ES 500 ARM LPC2148 INTERFACING WITH RFID circuit diagram realtek rtd 1186 | |
mosfet 4800
Abstract: schematic diagram inverter 12v to 24v 30a schematic diagram inverter 500w USING MOSFET 4606 MOSFET INVERTER ltsx e3 mosfet driver ic mt 1389 de aot 110 optocoupler 4558 opamp schematic ic 4440 40w amplifier 12v LTPG e3
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D-59387 D-73230 1-800-4-LINEAR mosfet 4800 schematic diagram inverter 12v to 24v 30a schematic diagram inverter 500w USING MOSFET 4606 MOSFET INVERTER ltsx e3 mosfet driver ic mt 1389 de aot 110 optocoupler 4558 opamp schematic ic 4440 40w amplifier 12v LTPG e3 | |
icl7211
Abstract: TR1602 icl7212 ICL7135 application 1CL7135 cross D6t 74c157 ICL7135 4s32 1J97
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ICL7135 ICM7211A. UNDERRA57 icl7211 TR1602 icl7212 ICL7135 application 1CL7135 cross D6t 74c157 4s32 1J97 |