INFRARED-SENSOR 860 Search Results

Contextual Info: T O SH IB A TLN103A TOSHIBA INFRARED LED GaAs INFRARED EMITTER T L N10 3A Unit in mm INFRARED LED FOR PHOTO SENSOR OPTO-ELECTRONIC SWITCH 0 3 . 0 ± 0 .3 SELECTOR TAPE, CARD READERS INFRARED RAYS APPLIED EQUIPMENT Wide half value angle : B \ = ±80° TYP.

S-8120B

Abstract: SC82AB
Contextual Info: SENSOR SENSOR LINE-UP P W af er SO in 8p in DI P -3 8p T23 SO SC -8 2 AB Package Page S-8110A 42 S-8120A 42 S-8110B 42 S-8120B 42 Receiver IC for infrared Remote Controller S-8270A 43 Linear image sensor IC for "contact image sensor" S-8603AWI 43 S-8631AWI

Contextual Info: CONTROL KNOBS BACKLIT INSTRUMENT PANEL Ambient Light Sensors TCPT1600X01 and TCUT1600X01 Turn and Push Transmissive Sensor MAP LIGHTS NIGHT VISION VSMY98545 SurfLight Infrared Surface Emitter VCNL4020X01 Integrated Proximity and Ambient Light Sensor PLCC2 Plus LED

"infrared led" 800 nm 980 nm

Abstract: TLP921 Reflective photosensor response time
Contextual Info: TLP921 Toshiba Photoreflective sensor Infrared LED + Phototransistor TLP921 Inkjet printer’s ink-level monitoring TLP921 is a reflective photosensor combining a GaAs infrared LED with a Si phototransistor. • Flush-mount package on PCB: Applied PCB thickness = 1.6 mm or

Contextual Info: TLP921 Toshiba Photoreflective sensor Infrared LED + Phototransistor Preliminary TLP921 Inkjet printer’s ink-level monitoring TLP921 is a reflective photosensor combining a GaAs infrared LED with a Si phototransistor. • Flush-mount package on PCB: Applied PCB thickness = 1.6 mm or

sr 100/25

Abstract: LN159 LN59 LNA2701L
Contextual Info: Infrared Light Emitting Diodes LNA2701L LN159 GaAs Infrared Light Emitting Diode VTR tape and sensor Unit: mm 8° 0.5 max. 2.8±0.2 8° 1.3±0.2 8° 0.8 φ1.4±0.2 Pulse forward current * Power dissipation Operating ambient temperature Storage temperature

Contextual Info: Infrared Light Emitting Diodes LNA2701L LN159 GaAs Infrared Light Emitting Diode VTR tape and sensor Unit: mm 8° 2.8±0.2 Forward current IF Pulse forward current * IFP Power dissipation PD Operating ambient temperature Topr Storage temperature Tstg Note) *: f = 100 Hz, Duty Cycle = 0.1%

TLN103

Abstract: TLN103A
Contextual Info: TLN103A GaAs INFRARED EMITTER T L N 1 0 3 A INFRARED LED FOR PHOTO SENSOR U n it in m m OPTO-ELECTRONIC SWITCH 0 3 O ± Q .3 SELECTOR TAPE, CARD READERS INFRARED RAYS APPLIED EQUIPMENT • Wide half value angle : d$= ± 8 0 °(TYP.) • Excellent linearity of radiant power and modulation by pulse

TLP921

Abstract: phototransistor 580
Contextual Info: TLP921 F Toshiba Photoreflective sensor Infrared LED + Phototransistor TLP921(F) Lead Free Product Inkjet printer’s ink-level monitoring TLP921(F) is a reflective photosensor combining a GaAs infrared LED with a Si phototransistor. • Flush-mount package on PCB: Applied PCB thickness = 1.6 mm or

Contextual Info: Infrared Light Emitting Diodes LNA2701L LN159 GaAs Infrared Light Emitting Diode VTR tape and sensor Unit: mm 8° 0.5 max. 26 1.3±0.2 0.8 8° 8° 2.8±0.2 2-C0.5 φ1.4±0.2 2-R0.7 1.0 VR 3 V IF 50 mA IFP 1 A Power dissipation PD 75 mW Operating ambient temperature

LN59

Abstract: LNA2701L
Contextual Info: Infrared Light Emitting Diodes LNA2701L GaAs Bi-directional Infrared Light Emitting Diode Unit : mm 8˚ 8˚ .5˚ 26 .5 26 ˚ For light source of VCR VHS System 0.5 max. Two-way directivity 2.8±0.2 2-C0.5 8˚ ø1.4±0.2 2-R0.7 1.0 Light source for tape end sensor of VCR and video camera

LN159

Abstract: LN59 LNA2701L
Contextual Info: Infrared Light Emitting Diodes LNA2701L LN159 GaAs Bi-directional Infrared Light Emitting Diode Unit : mm 8˚ 8˚ 26 26 .5 ˚ For light source of VCR (VHS System) .5˚ 0.5 max. Two-way directivity 2.8±0.2 2-C0.5 8˚ ø1.4±0.2 2-R0.7 1.0 Light source for tape end sensor of VCR and video camera

PIR325

Abstract: PIR based human motion DETECTOR CIRCUIT DIAGRAM PIR Sensor based security System PIR MOTION SENSOR wireless pir motion detector 810R-13953 CY3236APIRMOTION automatic door infrared sensor PIR325 design details CY88C27443
Contextual Info: CY3236A Pyroelectric Infrared PIR Motion Sensor Evaluation Kit Guide Doc. # 001-68617 Rev. *A Cypress Semiconductor 198 Champion Court San Jose, CA 95134-1709 Phone (USA): 800.858.1810 Phone (Intnl): 408.943.2600 http://www.cypress.com [+] Feedback Copyrights

LN159

Abstract: LN59 LNA2701L
Contextual Info: Infrared Light Emitting Diodes LNA2701L LN159 GaAs Infrared Light Emitting Diode VTR tape and sensor Unit: mm 8° M Di ain sc te on na tin nc ue e/ d 8° 0.5 max. 8° 8° 0.8 8° 2.4±0.2 2-R0.7 1.0 V IF 50 mA IFP 1 A Power dissipation PD 75 mW Operating ambient temperature

280s2

Abstract: tl package
Contextual Info: Emitter / Sensor Pairs Infrared Emitters Raft. rwmm . Radiant Flu* Feature* I B M IS654A . JàattM l Current - ' 3mm Dia. Tl Package 1.5 lF=40mA IS658A Side Emitting 0.7(lF=20mA) IS656A Side Emitting Compatible with Isocom Schmitt Trigger Detectors 0.75(lF=20mA

lt 860

Abstract: IS654A IS655A IS656A IS657A IS657B IS657C IS658A IS659B IS659D
Contextual Info: ISOCOM COMPONENTS Emitter / Sensor Pairs Infrared Emitters Part Number Features Radient Flux Miri mW Forward Current M axm A Reverse Voltage M ax (V) Forward Voltage M ax (V) W ave Length Typ. (nM) Beam Angle Degrees Package No. IS654A 3m m Dia. Tl P ackage

sensor BPW34 application note

Abstract: CEA-2038 TSOP4438 touch sensitive siren using transistor VSMY2850 BP104 application note TEMD6200 TSOP58038 vo2223 TEMD6200FX01
Contextual Info: V ishay I ntertechnolog y, I nc . Optoelectronics – Products for Industrial Applications AND TEC I INNOVAT O L OGY Guide to Industrial Applications N HN OPTOELECTRONICS O 19 62-2012 TABLE OF CONTENTS

Contextual Info: VeriSens vision sensors Image-based quality control − easy and intuitive. Eyeing your quality. 2 Simply focused on the essentials. Baumer is a global leader in sensor solutions for factory and process automation. More than 2,300 employees in 38 subsidiaries in 19 countries are

FPA100

Abstract: infrared transmission distance sensor 050in A101 FPA101 FPA102 photo dioda" IR sensor and photo diode pair lc 7400
Contextual Info: 1-9 Photo Arrays i Source If Device No. Description VF ip = 50 mA m A /c e ll V Max Typ Sensor •CE{H v CE sat) H = 1.0 m W /cm 2 (GaAs) Matching Factor VCE = 5.0 V ■CE = 4.0 mA mA V Typ Typ ip = 50 mA VCE = 5.0 V Distance = 0.05" Min Typ ■oUTÍMin)

DRM001

Abstract: pir schematic PIR D 203 S PIR 203 S ON LINE UPS MC68HC908 ds1307 interface to pic microcontroller infrared sensor with pic sharp lcd lm16a211 IC1 LM7808 lcd 11059
Contextual Info: 68HC08M6 HC08M68HC 8M68HC08M DRM001/D Passive Infrared PIR Intruder Detection Using the MC68HC908JK1/3, Incorporating Remote Control Adjustment Using the MC68HC908GP32 Designer Reference Manual blank Passive Infrared (PIR) Intruder Detection Using the MC68HC908JK1/3,

sensor BPW34 application note

Abstract: touch sensitive siren using transistor tsop sensor Infrared sensor TSOP 1738 vo2223 vo3120 infrared signal transmission distance sensor BPW34 application note APPLICATION NOTE BpW34 BP104 application note
Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . G uide to Industr ial A pplic ations OPTOELECTRONICS OPTOELECTRONICS A PPL I CAT I O N S G U I D E w w w. v i s h a y. c o m OPTOELECTRONICS Guide to Industrial Applications Introduction As the world´s leading supplier of infrared emitters, photo detectors, and optical sensors,

security system using ir and pir sensor

Abstract: PIR 203 S ON LINE UPS MC68HC908 PIR D 203 S pir schematic LM16A21 LCD 11059 ds1307 interface to pic microcontroller sharp lcd lm16a211 LM16A211
Contextual Info: 68HC08M6 HC08M68HC 8M68HC08M Freescale Semiconductor, Inc. DRM001/D Passive Infrared PIR Intruder Detection Using the MC68HC908JK1/3, Incorporating Remote Control Adjustment Using the MC68HC908GP32 Designer Reference Manual Freescale Semiconductor, Inc.

Vishay TYPE 40D

Abstract: Vishay 40d AC 1506 panasonic inverter dv 707
Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . OPTOELECTRONICS Guide to Industrial Applications TABLE OF CONTENTS Introduction. 2

E3Z-LS86

Abstract: E3Z-LS81 E3Z-LS61 Paint thinners fgs npn Transistor BGS OMRON E3Z-LS E3Z-LS66 RELAY OMRON G XS3F-M421-402-A
Contextual Info: E3Z-LS Distance-settable Photoelectric Sensor • Switching between background and foreground suppression BGS/FGS enables detecting a variety of objects under various background/foreground conditions. ■ Influence of external interference, including inverter fluorescent lighting, minimized with