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    INFINEON PART MARKING TO263 Search Results

    INFINEON PART MARKING TO263 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    0201DS-0N6XKL Coilcraft Inc OLD PART NUMBER.(Change 'L' to 'E' for new halogen-free part number.) Visit Coilcraft Inc
    0201DS-2N3XJL Coilcraft Inc OLD PART NUMBER.(Change 'L' to 'E' for new halogen-free part number.) Visit Coilcraft Inc
    0201DS-4N8XJL Coilcraft Inc OLD PART NUMBER.(Change 'L' to 'E' for new halogen-free part number.) Visit Coilcraft Inc
    0201DS-9N6XJL Coilcraft Inc OLD PART NUMBER.(Change 'L' to 'E' for new halogen-free part number.) Visit Coilcraft Inc
    LPS3008-124 Coilcraft Inc OLD PART NUMBER.(Change final L\\ to \\R\\ for new halogen-free part number.)\\ Visit Coilcraft Inc

    INFINEON PART MARKING TO263 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IPP25N06S3L-21

    Abstract: Diode smd marking 44 ANPS071E IPB25N06S3L-21 INFINEON smd PART MARKING
    Text: Target data sheet IPI25N06S3L-21 IPP25N06S3L-21,IPB25N06S3L-21 OptiMOS -T Power-Transistor Product Summary Feature VDS • n-Channel RDS on • Enhancement mode ID • Logic Level • AEC Q101 qualified max. SMD version P- TO262 -3-1 P- TO263 -3-2 55 V


    Original     		IPI25N06S3L-21 IPP25N06S3L-21 IPB25N06S3L-21 IPP25N06S3L-21 3N06L21 BIPP25N06S3L-21, Diode smd marking 44 ANPS071E IPB25N06S3L-21 INFINEON smd PART MARKING PDF

    2N04L03

    Abstract: ANPS071E SPB80N04S2L-03 SPP80N04S2L-03
    Text: SPP80N04S2L-03 SPB80N04S2L-03 OptiMOS Power-Transistor Product Summary Feature 40 VDS  N-Channel RDS on  Enhancement mode max. SMD version ID  Logic Level P- TO263 -3-2 175°C operating temperature V 3.1 m 80 A P- TO220 -3-1  Avalanche rated  dv/dt rated


    Original     		SPP80N04S2L-03 SPB80N04S2L-03 Q67040-S4261 Q67040-S4262 2N04L03 BSPP80N04S2L-03 BSPB80N04S2L-03, 2N04L03 ANPS071E SPB80N04S2L-03 SPP80N04S2L-03 PDF

    PN0807

    Abstract: SPB100N08S2-07 SPP100N08S2-07 smd diode UM 07 BSPB100N08S2-07 66a smd
    Text: SPP100N08S2-07 SPB100N08S2-07 Preliminary data OptiMOS=Power-Transistor Feature  N-Channel Product Summary  Enhancement mode VDS 75 V 175°C operating temperature RDS on max. SMD version 6.8 m  Avalanche rated ID 100 A  dv/dt rated P-TO263-3-2 Type


    Original     		SPP100N08S2-07 SPB100N08S2-07 P-TO263-3-2 P-TO220-3-1 Q67060-S6044 PN0807 P-TO263-3-2 Q67060-S6046 P-TO220-3-1 PN0807 SPB100N08S2-07 SPP100N08S2-07 smd diode UM 07 BSPB100N08S2-07 66a smd PDF

    PN06L05

    Abstract: ANPS071E SPB100N06S2L-05 SPP100N06S2L-05 Q67060-S6043
    Text: SPP100N06S2L-05 SPB100N06S2L-05 OptiMOSâ Power-Transistor Product Summary Feature VDS • N-Channel RDS on • Enhancement mode max. SMD version ID • Logic Level P- TO263 -3-2 • 175°C operating temperature 55 V 4.4 mΩ 100 A P- TO220 -3-1 • Avalanche rated


    Original     		SPP100N06S2L-05 SPB100N06S2L-05 SPP100N06S2L-05 Q67060-S6043 SPB100N06S2L-05 Q67060-S6042 PN06L05 BSPP100N06S2L-05 BSPB100N06S2L-05, PN06L05 ANPS071E Q67060-S6043 PDF

    2n08l07

    Abstract: 67a smd 2N08L07 POWER 2n08l 2n08l07 marking smd diode 67A s6015 ANPS071E SPB80N08S2L-07 SPP80N08S2L-07
    Text: SPP80N08S2L-07 SPB80N08S2L-07 OptiMOS Power-Transistor Product Summary Feature 75 VDS  N-Channel RDS on  Enhancement mode max. SMD version ID  Logic Level P- TO263 -3-2 175°C operating temperature V 6.8 m 80 A P- TO220 -3-1  Avalanche rated  dv/dt rated


    Original     		SPP80N08S2L-07 SPB80N08S2L-07 Q67060-S6015 Q67060-S6016 2N08L07 BSPP80N08S2L-07 BSPB80N08S2L-07, 2n08l07 67a smd 2N08L07 POWER 2n08l 2n08l07 marking smd diode 67A s6015 ANPS071E SPB80N08S2L-07 SPP80N08S2L-07 PDF

    2n0609

    Abstract: 2n0609 data sheet Q67060-S6027 2N06 S6025 Q67060-S6025 smd TRANSISTOR code marking 8K SPB80N06S2-09 ANPS071E SPP80N06S2-09
    Text: SPP80N06S2-09 SPB80N06S2-09 OptiMOSâ Power-Transistor Product Summary Feature • N-Channel • Enhancement mode • 175°C operating temperature VDS 55 V R DS on 9.1 mΩ ID 80 A P- TO263 -3-2 • Avalanche rated P- TO220 -3-1 • dv/dt rated Type SPP80N06S2-09


    Original     		SPP80N06S2-09 SPB80N06S2-09 Q67060-S6025 Q67060-S6027 2N0609 BSPP80N06S2-09 BSPB80N06S2-09, 2n0609 2n0609 data sheet Q67060-S6027 2N06 S6025 Q67060-S6025 smd TRANSISTOR code marking 8K SPB80N06S2-09 ANPS071E SPP80N06S2-09 PDF

    DIODE smd marking 52A

    Abstract: SPB80N06S2L-09 SPP80N06S2L-09 2N06L09
    Text: SPP80N06S2L-09 SPB80N06S2L-09 Preliminary data OptiMOS =Power-Transistor Feature Product Summary • N-Channel VDS 55 V RDS on 8.5 mΩ ID 80 A • Enhancement mode • Logic Level •=175°C operating temperature P-TO263-3-2 P-TO220-3-1 • Avalanche rated


    Original     		SPP80N06S2L-09 SPB80N06S2L-09 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67060-S6031 2N06L09 P-TO263-3-2 DIODE smd marking 52A SPB80N06S2L-09 SPP80N06S2L-09 2N06L09 PDF

    pn03l03

    Abstract: Q67042-S4094 SPB100N03S2L-03 SPI100N03S2L-03 SPP100N03S2L-03 Q67042-S4055
    Text: Preliminary data SPI100N03S2L-03 SPP100N03S2L-03,SPB100N03S2L-03 OptiMOS=Power-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level  Excellent Gate Charge x RDS on P-TO262-3-1 VDS 30 RDS(on) max. SMD version 2.7 m ID 100 A P-TO263-3-2


    Original     		SPI100N03S2L-03 SPP100N03S2L-03 SPB100N03S2L-03 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67042-S4056 PN03L03 pn03l03 Q67042-S4094 SPB100N03S2L-03 SPI100N03S2L-03 Q67042-S4055 PDF

    2n06l09

    Abstract: SPB80N06S2L-11 SPP80N06S2L-11 2N06L
    Text: SPP80N06S2L-11 SPB80N06S2L-11 Preliminary data OptiMOS=Power-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level 175°C operating temperature  Avalanche rated  dv/dt rated VDS 55 RDS on 11 m ID 80 A P-TO263-3-2 Type Package


    Original     		SPP80N06S2L-11 SPB80N06S2L-11 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67060-S6035 2N06L09 P-TO263-3-2 2n06l09 SPB80N06S2L-11 SPP80N06S2L-11 2N06L PDF

    Q67060-S6038

    Abstract: No abstract text available
    Text: SPP100N04S2L-03 SPB100N04S2L-03 OptiMOS Power-Transistor Product Summary Feature 40 VDS  N-Channel RDS on  Enhancement mode max. SMD version ID  Logic Level m 3 100 P- TO263 -3-2 175°C operating temperature V A P- TO220 -3-1  Avalanche rated  dv/dt rated


    Original     		SPP100N04S2L-03 SPB100N04S2L-03 SPP100N04S2L-03 Q67060-S6038 SPB100N04S2L-03 Q67060-S6039 PN04L03 BSPP100N04S2L-03 BSPB100N04S2L-03, Q67060-S6038 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPP100N04S2-04 SPB100N04S2-04 OptiMOS Power-Transistor Product Summary Feature 40 VDS  N-Channel RDS on  Enhancement mode max. SMD version ID 175°C operating temperature P- TO263 -3-2  Avalanche rated V 3.3 m 100 A P- TO220 -3-1  dv/dt rated Ideal for fast switching buck converter


    Original     		SPP100N04S2-04 SPB100N04S2-04 Q67060-S6040 Q67060-S6041 PN0404 BSPP100N04S2-04 BSPB100N04S2-04, PDF

    Untitled

    Abstract: No abstract text available
    Text: SPP100N08S2-07 SPB100N08S2-07 OptiMOS Power-Transistor Product Summary Feature 75 VDS  N-Channel RDS on  Enhancement mode max. SMD version ID 175°C operating temperature P- TO263 -3-2  Avalanche rated V 6.8 m 100 A P- TO220 -3-1  dv/dt rated Ideal for fast switching buck converter


    Original     		SPP100N08S2-07 SPB100N08S2-07 Q67060-S6044 Q67060-S6046 PN0807 BSPP100N08S2-07 BSPB100N08S2-07, PDF

    smd marking 58a

    Abstract: 80N10L SPP80N10L SMD marking code 58A SPB80N10L SPI80N10L TP 80N10 SPP80N1
    Text: Preliminary data SPI80N10L SPP80N10L,SPB80N10L SIPMOS Power-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level 175°C operating temperature  Avalanche rated  dv/dt rated VDS P-TO262-3-1 100 V RDS on 14 m ID 80 A P-TO263-3-2


    Original     		SPI80N10L SPP80N10L SPB80N10L P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP80N10L Q67042-S4173 80N10L smd marking 58a 80N10L SMD marking code 58A SPB80N10L SPI80N10L TP 80N10 SPP80N1 PDF

    2n0612

    Abstract: smd diode 77a infineon 2n0612 BSPP77N06S2-12 SPP77N06S2-12 SPB77N06S2-12 BSPB77N06S2-12 80H100 55BA 2350pf
    Text: SPP77N06S2-12 SPB77N06S2-12 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 55 V • Enhancement mode R DS on 12 mΩ ID 80 A • 175°C operating temperature • Avalanche rated P- TO263 -3-2 P- TO220 -3-1 • dv/dt rated Type Package


    Original     		SPP77N06S2-12 SPB77N06S2-12 Q67060-S6029 2N0612 Q67060-S6030 BSPP77N06S2-12 BSPB77N06S2-12, 2n0612 smd diode 77a infineon 2n0612 SPP77N06S2-12 SPB77N06S2-12 BSPB77N06S2-12 80H100 55BA 2350pf PDF

    smd diode marking 69a

    Abstract: DIODE led SMD 5050 2N06L06 ANPS071E SPB80N06S2L-06 SPP80N06S2L-06 32F120
    Text: SPP80N06S2L-06 SPB80N06S2L-06 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 55 V • Enhancement mode R DS on 6.3 mΩ ID 80 A • Logic Level • 175°C operating temperature P- TO263 -3-2 P- TO220 -3-1 • Avalanche rated • dv/dt rated


    Original     		SPP80N06S2L-06 SPB80N06S2L-06 Q67060-S6033 2N06L06 Q67060-S6034 BSPP80N06S2L-06 BSPB80N06S2L-06, smd diode marking 69a DIODE led SMD 5050 2N06L06 ANPS071E SPB80N06S2L-06 SPP80N06S2L-06 32F120 PDF

    2N03L08

    Abstract: Q67042-S4037 2N03L08 2N03L08 ANPS071E SPB73N03S2L-08 SPI73N03S2L-08 SPP73N03S2L-08
    Text: SPI73N03S2L-08 SPP73N03S2L-08,SPB73N03S2L-08 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 30 V • Enhancement mode RDS on 8.4 mΩ • Logic Level ID 73 A • Excellent Gate Charge x RDS(on) P- TO262 -3-1 P- TO263 -3-2 P- TO220 -3-1


    Original     		SPI73N03S2L-08 SPP73N03S2L-08 SPB73N03S2L-08 SPP73N03S2L-08 Q67042-S4037 2N03L08 Q67042-S4036 2N03L08 Q67042-S4037 2N03L08 2N03L08 ANPS071E SPB73N03S2L-08 SPI73N03S2L-08 PDF

    2n04h4

    Abstract: infineon 2N04H4 ANPS071E SPB80N04S2-H4 SPI80N04S2-H4 SPP80N04S2-H4 Q67060-S6014
    Text: SPI80N04S2-H4 SPP80N04S2-H4,SPB80N04S2-H4 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS • Enhancement mode R DS on ID • 175°C operating temperature • Avalanche rated 40 P- TO262 -3-1 V 4 mΩ 80 P- TO263 -3-2 A P- TO220 -3-1


    Original     		SPI80N04S2-H4 SPP80N04S2-H4 SPB80N04S2-H4 SPP80N04S2-H4 Q67060-S6014 Q67060-S6013 2N04H4 2n04h4 infineon 2N04H4 ANPS071E SPB80N04S2-H4 SPI80N04S2-H4 Q67060-S6014 PDF

    2N06L09

    Abstract: D52A smd TRANSISTOR code marking 8K ANPS071E SPB80N06S2L-09 SPP80N06S2L-09
    Text: SPP80N06S2L-09 SPB80N06S2L-09 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 55 V • Enhancement mode R DS on 8.5 mΩ ID 80 A • Logic Level • 175°C operating temperature P- TO263 -3-2 P- TO220 -3-1 • Avalanche rated • dv/dt rated


    Original     		SPP80N06S2L-09 SPB80N06S2L-09 Q67060-S6031 2N06L09 Q67060-S6032 BSPP80N06S2L-09 BSPB80N06S2L-09, 2N06L09 D52A smd TRANSISTOR code marking 8K ANPS071E SPB80N06S2L-09 SPP80N06S2L-09 PDF

    p2n04l03

    Abstract: SPB160N04S2L-03 ANPS071E BSPB160N04S2L-03 Q67060-S6138 INFINEON PART MARKING to263
    Text: SPB160N04S2L-03 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 40 V • Enhancement mode RDS on max. SMD version 2.7 mΩ ID 160 A • Logic Level • High Current Rating P- TO263 -7-3 • Low On-Resistance RDS(on) • 175°C operating temperature


    Original     		SPB160N04S2L-03 SPB160N04S2L-03 Q67060-S6138 P2N04L03 BSPB160N04S2L-03, p2n04l03 ANPS071E BSPB160N04S2L-03 Q67060-S6138 INFINEON PART MARKING to263 PDF

    2N0404

    Abstract: ANPS071E SPB80N04S2-04 SPP80N04S2-04
    Text: SPP80N04S2-04 SPB80N04S2-04 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 40 V • Enhancement mode RDS on max. SMD version 3.4 mΩ • 175°C operating temperature ID 80 A • Avalanche rated P- TO263 -3-2 P- TO220 -3-1 • dv/dt rated


    Original     		SPP80N04S2-04 SPB80N04S2-04 Q67040-S4260 2N0404 Q67040-S4257 BSPP80N04S2-04 BSPB80N04S2-04, 2N0404 ANPS071E SPB80N04S2-04 SPP80N04S2-04 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPP100N08S2-07 SPB100N08S2-07 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 75 V • Enhancement mode RDS on max. SMD version 6.8 mΩ • 175°C operating temperature ID 100 A • Avalanche rated P- TO263 -3-2 P- TO220 -3-1 • dv/dt rated


    Original     		SPP100N08S2-07 SPB100N08S2-07 Q67060-S6044 PN0807 Q67060-S6046 BSPP100N08S2-07 BSPB100N08S2-07, PDF

    smd marking 58a

    Abstract: SPB80N10L SPP80N10L 80N10L SPI80N10
    Text: SPB80N10L SIPMOS Power-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level 175°C operating temperature  Avalanche rated  dv/dt rated VDS 100 V RDS on 14 m ID 80 A P-TO263-3-2 Type Package Ordering Code Marking SPB80N10L


    Original     		SPB80N10L P-TO263-3-2 Q67042-S4171 80N10L BSPP80N10L, BSPB80N10L BSPI80N10L, SPP80N10L, smd marking 58a SPB80N10L SPP80N10L 80N10L SPI80N10 PDF

    2n06l05

    Abstract: Q67060-S7422 200nC
    Text: SPI80N06S2L-05 SPP80N06S2L-05,SPB80N06S2L-05 OptiMOS =Power-Transistor Product Summary Feature 55 VDS  N-Channel RDS on  Enhancement mode ID  Logic Level P- TO262 -3-1  Avalanche rated max. SMD version P- TO263 -3-2 V 4.5 m 80 A P- TO220 -3-1  dv/dt rated


    Original     		SPI80N06S2L-05 SPP80N06S2L-05 SPB80N06S2L-05 SPB80N06S2L-05 Q67040-S4246 Q67040-S4256 Q67060-S7422 2N06L05 Q67060-S7422 200nC PDF

    2n03l08

    Abstract: 2N03L08 2N03L08 smd G47 A140H INFINEON PART MARKING to263 D36A
    Text: SPI73N03S2L-08 SPP73N03S2L-08,SPB73N03S2L-08 OptiMOS =Power-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level  Excellent Gate Charge x RDS on P- TO262 -3-1 VDS 30 R DS(on) 8.4 m ID 73 A P- TO263 -3-2 V P- TO220 -3-1 product (FOM)


    Original     		SPI73N03S2L-08 SPP73N03S2L-08 SPB73N03S2L-08 SPB73N03S2L-08 Q67042-S4037 Q67042-S4036 Q67042-S4081 2N03L08 2N03L08 2N03L08 smd G47 A140H INFINEON PART MARKING to263 D36A PDF