INFINEON DIODE BAS 70 Search Results

68W SOT

Abstract: ultra low noise 12GHz 64W SOT23 AUs SOT363 BAS 40-04 Infineon BAS 68-04 BAT 43 - 46 - 85 - 86 61 SIEMENS DIODE BAT 19 SOT143 DUAL DIODE
Contextual Info: Small CHIPS for big visions Schottky Diodes h t t p : / / w w w. i n f i n e o n . c o m Never stop thinking. max. max. typ typ t ion lica V R=0 V CT UF ( typ App ) IF = 10 m A ) IF = 1m A UF ( IF Sin gle Dua l iso lat e Dua d l se ries Dua l co m. Cat Dua

BAS70-04

Abstract: BAS 40 B5003 73S SOT23 75S SOT23 schottky 73s
Contextual Info: BAS70.B5000 / B5003 Silicon Schottky Diode • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing • Improved operating temperature range due to extra-low thermal resistance see attached Forward current curves

H6327

Abstract: E6327 PG-SCD80-2-1 UM-38 BB 555-02V E7912 BBY57-05W DIODE Sp marking code H7902 cu marking code diode SP000745054
Contextual Info: BBY57. Silicon Tuning Diode • Excellent linearity • High Q hyperabrupt tuning diode • Low series resistance • High capacitance ratio • Designed for low tuning voltage operation for VCO's in mobile communications equipment • For control elements such as TCXOs and VCXOs

BAS170W

Abstract: BAS70 BAS70-02L BAS70-02W BAS70-04S BAS70-04 BAS70-04W BAS70-05 BAS70-05W BAS70-06
Contextual Info: BAS70. / BAS170W Silicon Schottky Diode • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing BAS170W BAS70-02L BAS70-02W BAS70 BAS70-04 BAS70-04W 3 BAS70-04S 6 3 4 5 D 3 1 2 D 1

BAS28

Contextual Info: BAS28. Silicon Switching Diode
For high-speed switching applications
Electrical insulated diodes BAS28/W 4 3 D 1 D 2 1 2 Type BAS28 BAS28W Package SOT143 SOT343 Configuration parallel pair parallel pair Marking JTs JTs Maximum Ratings at TA = 25°C, unless otherwise specified

Contextual Info: BAS70./BAS170W Silicon Schottky Diode • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing • BAS70-04S: For orientation in reel see package information below • Pb-free RoHS compliant package

Contextual Info: BAS28. Silicon Switching Diode • For high-speed switching applications • Electrical insulated diodes • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BAS28/W " ! ,  ,  Type Package Configuration Marking BAS28 BAS28W SOT143 SOT343

marking JSs

Abstract: bas21 BAS21 SOD323
Contextual Info: BAS21. Silicon Switching Diode
For high-speed switching applications
High breakdown voltage BAS21 BAS21-03W BAS21U 6 3 4 5 D 1 1 1 D 2 D 3 2 1 2 2 3 Type Package Configuration Marking BAS21 BAS21U BAS21-03W SOT23 SC74 SOD323 single parallel triple single

bas70-07w

Abstract: DIODE MARKING CODE LAYOUT G SOT23 BAS70-04S marking G SOT323 Transistor BAS70-02W BAS70-02L BAS70 Series G t marking SOT323 MARKING 02W marking 20 sot363
Contextual Info: BAS70. / BAS170W Silicon Schottky Diode • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing • BAS70-04S: For orientation in reel see package information below BAS170W BAS70-02L

marking CODE JTS

Abstract: BAS28 marking CODE JTS 56 BAS28W BFP181 BGA420
Contextual Info: BAS28. Silicon Switching Diode • For high-speed switching applications • Electrical insulated diodes • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BAS28/W " ! ,  ,  Type Package Configuration Marking BAS28 BAS28W SOT143 SOT343

BAS28

Contextual Info: BAS28. Silicon Switching Diode • For high-speed switching applications • Electrical insulated diodes BAS28/W " ! ,  ,  Type BAS28 BAS28W Package SOT143 SOT343 Configuration parallel pair parallel pair Marking JTs JTs Maximum Ratings at TA = 25°C, unless otherwise specified

BAS28

Contextual Info: BAS28. Silicon Switching Diode
For high-speed switching applications
Electrical insulated diodes BAS28/W 4 3 D 1 D 2 1 2 Type BAS28 BAS28W Package SOT143 SOT343 Configuration parallel pair parallel pair Marking JTs JTs Maximum Ratings at TA = 25°C, unless otherwise specified

marking CODE JTS

Abstract: BAS28
Contextual Info: BAS28. Silicon Switching Diode
For high-speed switching applications
Electrical insulated diodes BAS28/W 4 3 D 1 D 2 1 2 Type BAS28 BAS28W Package SOT143 SOT343 Configuration parallel pair parallel pair Marking JTs JTs Maximum Ratings at TA = 25°C, unless otherwise specified

INFINEON diode MARK 22

Abstract: marking code TS marking code 76s BAS170W BAS70-02L BAS70-02W BAS70-04S MARKING 74s marking 77s bas16 infineon top marking code
Contextual Info: BAS70. / BAS170W Silicon Schottky Diode • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing BAS170W BAS70-02L BAS70-02W BAS70 BAS70-04 BAS70-04W 3 BAS70-04S 6 3 4 5 D 3 1 2 D 1

BAS70

Abstract: BAS70-02L BAS70-02W BAS70-04S marking 77s
Contextual Info: BAS70. / BAS170W Silicon Schottky Diode • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing • BAS70-04S: For orientation in reel see package information below BAS170W BAS70-02L

BAS21 SOD323

Abstract: marking JSs BAS21 BAS21 SOT23 Marking code jSs BAS21U JSs marking code 65 marking sot23 marking code ag BAR63-03W
Contextual Info: BAS21. Silicon Switching Diode • For high-speed switching applications • High breakdown voltage BAS21 BAS21-03W BAS21U $ ! ,     " # , , ! ! Type Package Configuration Marking BAS21 BAS21-03W BAS21U SOT23 SOD323 SC74 single single parallel triple

BAS21

Abstract: BAS21-03W BAS21U BCW66H E6327 SC74 bas21 infineon DIN6784 BAS21 SOD323 JSs sot23
Contextual Info: BAS21. Silicon Switching Diode
For high-speed switching applications
High breakdown voltage BAS21 BAS21-03W BAS21U 6 3 4 5 D 1 1 1 D 2 D 3 2 1 2 2 3 Type Package Configuration Marking BAS21 BAS21U BAS21-03W SOT23 SC74 SOD323 single parallel triple single

Marking code jSs

Abstract: BAS21 SOD323 BAS21 JSs marking code BAS21 SOT23 bas21 infineon BAS21-03W BAS21U BCW66H SC74
Contextual Info: BAS21. Silicon Switching Diode • For high-speed switching applications • High breakdown voltage • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BAS21 BAS21-03W BAS21U $ ! ,     " # , , ! ! Type Package Configuration Marking

Contextual Info: BAS21. Silicon Switching Diode • For high-speed switching applications • High breakdown voltage • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BAS21 BAS21-03W BAS21U $ ! " # ,  , , !    ! Type Package Configuration Marking

DIN 6784

Abstract: marking code TS Diode Mark sot23 4x marking code 76s BAS170W BAS70-02L BAS70-02W BAS70-04S MARKING 74s marking 77s
Contextual Info: BAS70. / BAS170W Silicon Schottky Diode • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing BAS170W BAS70-02L BAS70-02W BAS70 BAS70-04 BAS70-04W 3 BAS70-04S 6 3 4 5 D 3 1 2 D 1

Contextual Info: BAS70./BAS170W Silicon Schottky Diode • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing • BAS70-04S: For orientation in reel see package information below • Pb-free RoHS compliant package1)

BAS170W

Abstract: BAS70-02L BAS70-02W BAS70-04S MARKING 74s SOt323 marking code 6X MARKING 77s BAS70 Series BAS70 BAS70-04
Contextual Info: BAS70./BAS170W Silicon Schottky Diode • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing • BAS70-04S: For orientation in reel see package information below • Pb-free RoHS compliant package1)

MMIC Amplifier Micro-X marking 420

Abstract: x-band microwave fet cfy 14 BFy 90 transistor guide selection microwave transistors BFY193 transistor C 5611 transistor "micro-x" "marking" 3 GaAs Amplifier Micro-X micro-x 420 "Microwave Diodes"
Contextual Info: HiRel Discrete & Microwave Semiconductors Introduction and Type Overview Table of Contents Title Component Types Package Types Page 1 Preliminary Remarks 2 2 Introduction to HiRel and Space Qualified Devices 2 2.1 General 2 2.2 Silicon Devices 3 2.3 GaAs Devices

gaas fet micro-X Package marking

Abstract: INFINEON DIODE BAS 70 infineon radar BFY420 GaAs Amplifier Micro-X Marking N
Contextual Info: GaAs Components Infineon ?0í^nü!og¡«» HiRel Discretes and Microwave Semiconductors 11.1 Preliminary Remarks This Paragraph gives an overview on the HiRel Small Signal Microwave Semiconductors available from Infineon. Full data sheets are also given in our HiRel Discrete and