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    IN4153 DIODE Search Results

    IN4153 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    IN4153 DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    in4153

    Abstract: c 337 25 1N4153 1N4153-1 D0-35
    Text: • 1N4153 and 1N4153-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/337 1N4153 and 1N4153-1 • SWITCHING DIODES • HERMETICALLY SEALED • METALLURGICALLY BONDED • DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS Junction Temperature: -65°C to +175°C


    Original     		1N4153 1N4153-1 MIL-PRF-19500/337 1N4153 1N4153-1 IN4153 IN4153-1 in4153 c 337 25 D0-35 PDF

    IN2222A

    Abstract: transitron catalog TCR43 TM106 IN443 1n9448 sv4091 IN4868 diode 3N68 IN536
    Text: ron Tro nsitron electronic corporation e I ron 168 Albion Street . Wakefield. Massachusetts 01881 WAKEFIELD, MASSACHUSE TTS BOSTON, MASSACHUSETTS MELROSE, MASSACHUSETTS NUEVO LAREDO, MEXICO BERKSHIRE, ENGLAND PARIS, FRANCE AMSTERDAM, THE NETHERLANDS ~ ciectl'onic corpOI'atioll


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N4150 1N4151 1N4153 b b S B ' m D02b^03 202 H A P X N AUER PHILIPS/DISCRETE b^E D _X' V ULTRA-HIGH-SPEED SILICON DIODES Whiskerless diodes in subminiature DO-35 envelopes. The IN4150 is primarily intended for general purpose use in computer and industrial applications.


    OCR Scan     		1N4150 1N4151 1N4153 DO-35 IN4150 IN4151 IN4153 N4150 IN4151 IN4153 PDF

    in4151

    Abstract: IN4150 IN4153 IN4153 diode N4150 1N4150 1N4151 1N4153 IEC134
    Text: • bbSB'm N AUER 202 ooab^oa 1N4150 1N4151 1N4153 hapx PHILIPS/DISCRETE bTE D ULTRA-HIGH-SPEED SILICON DIODES Whiskerless diodes in su b m in ia tu re DO -35 envelopes. T he IN 4 1 5 0 is p rim a rily intended fo r general purpose use in co m p u te r and in d u stria l applications.


    OCR Scan     		bb53131 1N4150 1N4151 1N4153 DO-35 IN4150 IN4151 IN4153 N4150 IN4153 diode 1N4150 1N4151 1N4153 IEC134 PDF

    IN4153

    Abstract: No abstract text available
    Text: • 1N4153 and 1N4153-1 AVAILABLE IN JAN, JANTX, AND JANTXV 1N4153 and 1N4153-1 PER MIL-PRF-19500/337 • SWITCHING DIODES • HERMETICALLY SEALED • METALLURGICALLY BONDED • DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS Junction Temperature: -65°C to +175°C


    OCR Scan     		1N4153 1N4153-1 MIL-PRF-19500/337 1N4153-1 IN4153 IN4153-1 PDF

    IN4153

    Abstract: 1N4153 1N4153-1 IN4153-1
    Text: JAN, JANTX, •1N4153 and 1N4153-1 AVAILABLE IN AND JANTXV 1N4153 and 1N4153-1 PER MlL-PRF-19500/337 'SW ITCHING DIODES 'H E R M ETIC A LLY SEALED ' METALLURGICALLY BONDED ' DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS Ju n ctio n T e m p e ra tu re : -6 5°C to + 17 5°C


    OCR Scan     		1N4153 1N4153-1 MlL-PRF-19500/337 1N4153 MIL-S-19500/337 DO-35 IN4153 IN4153-1 IN4153-1 PDF

    IN4152

    Abstract: IN4606 in4447 IN916B IN4608 IN917 IN4150 in914b IN4149 IN4164
    Text: 1 Small Signal Diodes Explanation of Device Coding Devices prefixed " 1 N " are JG DEC Joint Electronic Device Engineering Council registered devices. These-type numbers are recognised in the USA. Devices prefixed " 1 S " are Texas Instruments in-house numbers.


    OCR Scan     		IS960 IS961 DO-35 IN4152 IN4606 in4447 IN916B IN4608 IN917 IN4150 in914b IN4149 IN4164 PDF

    IN4149

    Abstract: cv8790 CV7040 Diode BAY 61 IS923 IN917 CV8617 texas is920 IS920 IN4448
    Text: 1 Small Signal Diodes Explanation of Device Coding Devices prefixed " 1 N " are JGDEC Joint Electronic Device Engineering Council registered devices. These-type numbers are recognised in the USA. Devices prefixed "1 S " are Texas Instruments in-house numbers.


    OCR Scan     		CV8790 IS922 DO-35 CV9637 IN4448 DS59-61/03/302 BAY71 DS59-61/03/303 IN4149 CV7040 Diode BAY 61 IS923 IN917 CV8617 texas is920 IS920 PDF

    IN3599

    Abstract: 1N9168 1N4242 IN485 IN625 1N20S 1N4389 1N4243 in648 IN458a
    Text: jomltron « • - _ SemitronicsCorp. ■ SS 481.1541= DD0DB05 3 ■ H iç rrp tp sem ico nd u c to r s IN T E X / SEMITRONICS CORP S7E D _ , , , / / / silicon diodes Reverse Current «A)150°C (See Notes) 5.0 SO 56 50 50 6.5 2.0 1.0 2.0 2.0 15 1.5


    OCR Scan     		1N194A 1N195 1K200 1N201 JN202 IN4829 1N4J30 MP035Ã MPD302 MPB401 IN3599 1N9168 1N4242 IN485 IN625 1N20S 1N4389 1N4243 in648 IN458a PDF

    IN3599

    Abstract: IN433A IN625 1N3068 1N218 1N4147 IN648 1N3069 1N3067 IN485
    Text: « • - _ j o m lt r o n SemitronicsCorp. ■ 481.1541= DD0DB05 3 ■ H iç rrp tp S S sem ico nd u c to r s IN T E X / SEMITRONICS CORP S7E D _ , , , / / / - <DI V t silicon diodes Reverse Current «A)150°C (See Notes) 5.0 SO 56 50 50 6.5 2.0


    OCR Scan     		DD0DB05 IN3599 IN433A IN625 1N3068 1N218 1N4147 IN648 1N3069 1N3067 IN485 PDF

    TELEVISION EHT TRANSFORMERS

    Abstract: BYW96E PH smd code Z9P germanium transistor BY527 EQUIVALENT BYD33D BAX12 BB212 BB515 BBY31
    Text: Philips Semiconductors Diodes Contents page SELECTION GUIDE Small-signal diodes 5 Tuner diodes 7 FM detection diodes 8 Low leakage diodes 8 Schottky barrier switching diodes 9 Stabistors Voltage regulators 9 10 Voltage reference diodes 11 Transient suppressor diodes


    OCR Scan     		LCD01 TELEVISION EHT TRANSFORMERS BYW96E PH smd code Z9P germanium transistor BY527 EQUIVALENT BYD33D BAX12 BB212 BB515 BBY31 PDF

    TIS43

    Abstract: equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent
    Text: The Transistor and Diode Data Book for Design Engineers Volume II Northern European Edition IMPORTANT NOTICES Texas Instrum ents Ltd ., reserves the rig h t to make changes at any tim e in order to improve design and to supply the best p ro d u c t possible.


    OCR Scan     		2S301 BS9300-C-598 2S305 BS9300-C-366 2S307 2S322 CV7396 BS9300-C-396 CV7647 BS9300-C-647 TIS43 equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent PDF

    LG color tv Circuit Diagram schematics

    Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		3186J LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007 PDF

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF