1805-1880MHz power amplifier
Abstract: No abstract text available
Text: ACPM-5001-TR1 Multimode PA - UMTS Band1 and CDMA IMT 1920-1980MHz 3x3mm Power Amplifier Module with Coupler Data Sheet Description Features The ACPM-5001-TR1 is a fully matched 10-pin surface mount module developed to support multimode applications including UMTS Band1 and CDMA IMT band(Band6).
|
Original
|
ACPM-5001-TR1
1920-1980MHz)
ACPM-5001-TR1
10-pin
25dBm
50ohm
AV02-2476EN
1805-1880MHz power amplifier
|
PDF
|
ACPM-5001
Abstract: SMD Transistor g25 ACPM-5001-TR1 A5001 cdma complete layout drawing g25 SMD Transistor smd transistor g19
Text: ACPM-5001-TR1 Multimode PA - UMTS Band1 and CDMA IMT 1920-1980MHz 3x3mm Power Amplifier Module with Coupler Data Sheet Description Features The ACPM-5001-TR1 is a fully matched 10-pin surface mount module developed to support multimode applications including UMTS Band1 and CDMA IMT band(Band6).
|
Original
|
ACPM-5001-TR1
1920-1980MHz)
ACPM-5001-TR1
10-pin
25dBm
50ohm
AV02-2476EN
ACPM-5001
SMD Transistor g25
A5001
cdma complete layout drawing
g25 SMD Transistor
smd transistor g19
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ACPM-5001-TR1 Multimode PA - UMTS Band1 and CDMA IMT 1920-1980MHz 3x3mm Power Amplifier Module with Coupler Data Sheet Description Features The ACPM-5001-TR1 is a fully matched 10-pin surface mount module developed to support multimode applications including UMTS Band1 and CDMA IMT band(Band6).
|
Original
|
ACPM-5001-TR1
1920-1980MHz)
ACPM-5001-TR1
10-pin
25dBm
50ohm
AV02-2476EN
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BULLETIN NO. IMT-B DRAWING NO. LP0196 REVISED 3/97 RED LION CONTROLS INTERNATIONAL HEADQUARTERS EUROPEAN HEADQUARTERS 20 Willow Springs Circle, York, Pa. 17402, 717 767-6511 FAX: (717) 764-0839 Web site- http://www.redlion-controls.com E-mail- sales@redlion-controls.com
|
Original
|
LP0196
IMT00030
IMT00060
IMT00032
IMT00062
IMT02030
IMT02060
IMT02031
IMT02061
IMT02032
|
PDF
|
max 16801 pspice
Abstract: 40J100
Text: 0.4 W, L&S-BAND MEDIUM POWER GaAs HJ-FET NE651R479A FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel PACKAGE OUTLINE 79A • USABLE TO 3.7 GHz: Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000,
|
Original
|
NE651R479A
IMT-2000,
NE6501R479A
IR35-00-2
24-Hour
max 16801 pspice
40J100
|
PDF
|
6822 FET
Abstract: No abstract text available
Text: 0.4 W, L&S-BAND MEDIUM POWER GaAs HJ-FET NE651R479A FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel PACKAGE OUTLINE 79A • USABLE TO 3.7 GHz: Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000,
|
Original
|
NE651R479A
IMT-2000,
NE6501R479A
IR35-00-2
24-Hour
6822 FET
|
PDF
|
FUJITSU MICROWAVE TRANSISTOR
Abstract: FLL1500IU-2C Fujitsu GaAs FET application note push pull class AB RF linear 1.3 GHz FLL1500 class A push pull power amplifier 150w 4433B IMT-2000 push pull class AB RF linear L band stub tuner matching
Text: FUJITSU APPLICATION NOTE - No 009 150-W, 2.11- 2.17 GHz Push-Pull Compact Amplifier For IMT-2000 Base-Station Application Using The FLL1500IU-2C GaAs FET Device FEATURES • Targeted WCDMA ACPR at 20W average Pout • Easy tuning for Power, WCDMA ACPR, and
|
Original
|
IMT-2000
FLL1500IU-2C
440mA
FUJITSU MICROWAVE TRANSISTOR
Fujitsu GaAs FET application note
push pull class AB RF linear 1.3 GHz
FLL1500
class A push pull power amplifier 150w
4433B
push pull class AB RF linear L band
stub tuner matching
|
PDF
|
500w stabilizer
Abstract: BSC24
Text: 12-Bit, 20/40/65 MSPS 3 V A/D Converter AD9235 Data Sheet FEATURES APPLICATIONS Ultrasound equipment IF sampling in communications receivers IS-95, CDMA-One, IMT-2000 Battery-powered instruments Hand-held scopemeters Low cost digital oscilloscopes FUNCTIONAL BLOCK DIAGRAM
|
Original
|
12-Bit,
AD9235
RU-28
500w stabilizer
BSC24
|
PDF
|
ATC 1084
Abstract: GRM40C0G 100A5R1CP150X IMT-2000 NE651R479A NE651R479A-A NE651R479A-T1-A
Text: NEC's 1 W, L&S-BAND MEDIUM POWER GaAs HJ-FET NE651R479A FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel PACKAGE OUTLINE 79A • USABLE TO 3.7 GHz: Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000,
|
Original
|
NE651R479A
IMT-2000,
NE651R479A
ATC 1084
GRM40C0G
100A5R1CP150X
IMT-2000
NE651R479A-A
NE651R479A-T1-A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 1 W, L&S-BAND MEDIUM POWER GaAs HJ-FET NE651R479A FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel PACKAGE OUTLINE 79A • USABLE TO 3.7 GHz: Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000, PCS
|
Original
|
NE651R479A
IMT-2000,
NE651R479A
IR35-00-2
24-Hour
|
PDF
|
100A5R1CP150X
Abstract: IMT-2000 NE651R479A NE651R479A-A NE651R479A-T1-A ATC 1084
Text: NEC's 1 W, L&S-BAND MEDIUM POWER GaAs HJ-FET NE651R479A FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel PACKAGE OUTLINE 79A • USABLE TO 3.7 GHz: Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000,
|
Original
|
NE651R479A
IMT-2000,
NE651R479A
100A5R1CP150X
IMT-2000
NE651R479A-A
NE651R479A-T1-A
ATC 1084
|
PDF
|
IMT-2000
Abstract: MAX2383 MAX2383EBC 2300MHz Passband filter
Text: 19-2108; Rev 0; 7/01 KIT ATION EVALU E L B AVAILA W-CDMA Upconverter and PA Driver with Power Control Features ♦ +6dBm Output Power with -46dBc ACPR The MAX2383 is designed to support the IMT-2000 frequency band. It includes a differential IF input port,
|
Original
|
-46dBc
MAX2383
IMT-2000
MAX2383
IMT-2000
MAX2383EBC
2300MHz Passband filter
|
PDF
|
IC 3140
Abstract: transistor NEC D 882 p ATC 1084 nec d 882 p 901 704 16 08 55 nec d 882 p datasheet 100A5R1CP150X IMT-2000 NE651R479A NE651R479A-T1
Text: 1 W, L&S-BAND MEDIUM POWER GaAs HJ-FET NE651R479A FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel PACKAGE OUTLINE 79A • USABLE TO 3.7 GHz: Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000, PCS
|
Original
|
NE651R479A
IMT-2000,
NE651R479A
IR35-00-2
24-Hour
IC 3140
transistor NEC D 882 p
ATC 1084
nec d 882 p
901 704 16 08 55
nec d 882 p datasheet
100A5R1CP150X
IMT-2000
NE651R479A-T1
|
PDF
|
nec d 882 p
Abstract: 100A5R1CP150X IMT-2000 NE651R479A NE651R479A-A NE651R479A-T1-A nec 1251
Text: NEC's 1 W, L&S-BAND NE651R479A Medium POWER GaAs HJ-FET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel PACKAGE OUTLINE 79A • USABLE TO 3.7 GHz: Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000,
|
Original
|
NE651R479A
IMT-2000,
NE651R479A
nec d 882 p
100A5R1CP150X
IMT-2000
NE651R479A-A
NE651R479A-T1-A
nec 1251
|
PDF
|
|
NE6510179A
Abstract: No abstract text available
Text: 3W, L&S-BAND NE6510179A MEDIUM POWER GaAs HJ-FET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel PACKAGE OUTLINE 79A 1.5 – 0.2 4.2 MAX • USABLE TO 3.7 GHz: Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000,
|
Original
|
NE6510179A
IMT-2000,
24-Hour
|
PDF
|
IMT-2000
Abstract: MAX2383 MAX2383EBC-T 5B125
Text: 19-2108; Rev 1; 8/03 KIT ATION EVALU E L B AVAILA W-CDMA Upconverter and PA Driver with Power Control Features ♦ +6dBm Output Power with -46dBc ACPR The MAX2383 is designed to support the IMT-2000 frequency band. It includes a differential IF input port,
|
Original
|
-46dBc
MAX2383
IMT-2000
B12-5
MAX2383
IMT-2000
MAX2383EBC-T
5B125
|
PDF
|
FUJITSU MICROWAVE TRANSISTOR
Abstract: class A push pull power amplifier 150w FLL1500IU-2C FLL1500 Fujitsu GaAs FET application note push pull class AB RF linear 1.3 GHz 4433b IMT-2000 push pull class AB RF linear S110 transistor
Text: FUJITSU APPLICATION NOTE - No 004 150-W, 2.11- 2.17 GHz Push-Pull Amplifier For IMT-2000 BaseStation Application Using The FLL1500IU-2C GaAs FET Device FEATURES • Targeted WCDMA ACPR at 20W average • Easy tuning for Power, WCDMA ACPR, and IMD • Over 150 Watts Pout over entire band
|
Original
|
IMT-2000
FLL1500IU-2C
440mA
FUJITSU MICROWAVE TRANSISTOR
class A push pull power amplifier 150w
FLL1500
Fujitsu GaAs FET application note
push pull class AB RF linear 1.3 GHz
4433b
push pull class AB RF linear
S110 transistor
|
PDF
|
NE6510179A
Abstract: NE65 ms 16881
Text: 3W, L&S-BAND NE6510179A MEDIUM POWER GaAs HJ-FET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel PACKAGE OUTLINE 79A 1.5 – 0.2 4.2 MAX • USABLE TO 3.7 GHz: Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000,
|
Original
|
NE6510179A
IMT-2000,
24-Hour
NE65
ms 16881
|
PDF
|
NE6510179A
Abstract: No abstract text available
Text: NEC's 3W, L&S-BAND NE6510179A MEDIUM POWER GaAs HJ-FET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel PACKAGE OUTLINE 79A 1.5 – 0.2 4.2 MAX • USABLE TO 3.7 GHz: Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000,
|
Original
|
NE6510179A
IMT-2000,
|
PDF
|
NE6510179A
Abstract: No abstract text available
Text: 1W, L&S-BAND NE6510179A MEDIUM POWER GaAs HJ-FET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel PACKAGE OUTLINE 79A 1.5 – 0.2 4.2 MAX • USABLE TO 3.7 GHz: Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000,
|
Original
|
NE6510179A
IMT-2000,
24-Hour
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 19-2108; Rev 0; 7/01 KIT ATION EVALU E L B AVAILA W-CDMA Upconverter and PA Driver with Power Control Features ♦ +6dBm Output Power with -46dBc ACPR The MAX2383 is designed to support the IMT-2000 frequency band. It includes a differential IF input port,
|
Original
|
-46dBc
-144dBm/Hz
MAX2383
MAX2383
|
PDF
|
MCR03J
Abstract: IMT-2000 NE6510179A NE6510179A-A 100A4R7CP150X AF127 IC 13700 NE6510179AT1A
Text: NEC's 3W, L&S-BAND NE6510179A MEDIUM POWER GaAs HJ-FET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel PACKAGE OUTLINE 79A 1.5 – 0.2 4.2 MAX • USABLE TO 3.7 GHz: Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000,
|
Original
|
NE6510179A
IMT-2000,
MCR03J
IMT-2000
NE6510179A
NE6510179A-A
100A4R7CP150X
AF127
IC 13700
NE6510179AT1A
|
PDF
|
FUJITSU MICROWAVE TRANSISTOR
Abstract: FLL600IQ-2C 60W POWER AMPLIFIER CIRCUIT Fujitsu GaAs FET application note FLL600IQ-2 fujitsu power amplifier GHz push pull class AB RF linear 1.3 GHz 4433B IMT-2000 GAAS FET AMPLIFIER f 10Mhz to 2 GHz
Text: FUJITSU APPLICATION NOTE - No 005 60-W, 2.11 – 2.17 GHz Push-Pull Amplifier for IMT-2000 Base Station Application using the FLL600IQ-2C GaAs FET FEATURES • Targeted WCDMA ACPR at 6 W Average • Easy tuning for Power, WCDMA ACPR and IMD • Over 60 Watts Pout over entire band
|
Original
|
IMT-2000
FLL600IQ-2C
151mA
FUJITSU MICROWAVE TRANSISTOR
60W POWER AMPLIFIER CIRCUIT
Fujitsu GaAs FET application note
FLL600IQ-2
fujitsu power amplifier GHz
push pull class AB RF linear 1.3 GHz
4433B
GAAS FET AMPLIFIER f 10Mhz to 2 GHz
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TECHNICAL Page 1 / 1 DATA R284.008.001 IMT FEMALE 20 CM CABLE 2/50 S-BR MMT SERIES 200 *1* Connector A *2* Connector 9 *3* Cable Type R210.153.000 C29i.145.007 : CAB HF 2/50 RG 178 BROWN 50 NOMINAL IMPEDANCE 0-8 FREQUENCY RANGE 1.10 .05 x + 0.20 RF INSERTION LOSS
|
OCR Scan
|
10-0C
10-0CT-96
|
PDF
|