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Tymphany HK Limited NE65W-04 SPEAKER 4OHM 25W TOP PORT 82.7DB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NE65W-04	Bulk	2,246		1	1 $29.96 10 $28.46 100 $25.4634 1000 $23.96564 10000 $23.96564	Buy Now
Nexperia PNE650200EJ-QJ PNE650200EJ-Q/SOT8018/TO263-2L
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DigiKey	PNE650200EJ-QJ	Cut Tape	800		1	1 $1.31 10 $0.95 100 $0.7624 1000 $0.71544 10000 $0.71544	Buy Now
	PNE650200EJ-QJ	Digi-Reel	800		1	1 $1.31 10 $0.95 100 $0.7624 1000 $0.71544 10000 $0.71544	Buy Now
	PNE650200EJ-QJ	Reel	800		800	1 - 10 - 100 - 1000 $0.67083 10000 $0.61584	Buy Now
Avnet Americas	PNE650200EJ-QJ	Reel			1,600	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	PNE650200EJ-QJ					1 $1.47 10 $1.21 100 $0.937 1000 $0.635 10000 $0.624	Get Quote
Newark	PNE650200EJ-QJ	Cut Tape			1	1 $1.57 10 $1.29 100 $1 1000 $0.851 10000 $0.693	Buy Now
TTI	PNE650200EJ-QJ	Reel			1,600	1 - 10 - 100 - 1000 - 10000 $0.569	Buy Now
Nexperia PNE650100EJ-QJ PNE650100EJ-Q/SOT8018/TO263-2L
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	PNE650100EJ-QJ	Cut Tape	800		1	1 $0.97 10 $0.699 100 $0.5549 1000 $0.51904 10000 $0.51904	Buy Now
	PNE650100EJ-QJ	Digi-Reel	800		1	1 $0.97 10 $0.699 100 $0.5549 1000 $0.51904 10000 $0.51904	Buy Now
	PNE650100EJ-QJ	Reel	800		800	1 - 10 - 100 - 1000 $0.48493 10000 $0.4429	Buy Now
Avnet Americas	PNE650100EJ-QJ	Reel			1,600	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	PNE650100EJ-QJ					1 $1.05 10 $0.861 100 $0.67 1000 $0.462 10000 $0.457	Get Quote
Newark	PNE650100EJ-QJ	Cut Tape			1	1 $1.75 10 $1.1 100 $0.746 1000 $0.653 10000 $0.653	Buy Now
TTI	PNE650100EJ-QJ	Reel			1,600	1 - 10 - 100 - 1000 - 10000 $0.407	Buy Now
Panduit Corp DNE6522B ENCLOSURE ACCESSORY NET VERSE
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DigiKey	DNE6522B	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
California Eastern Laboratories (CEL) NE650103M-A RF MOSFET 10V 3M
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DigiKey	NE650103M-A	Tray				1 - 10 - 100 - 1000 - 10000 -	Buy Now

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NE65 Datasheets (80)

Part	Manufacturer	Description	Datasheet Type	PDF
NE6500179A	NEC	1 W L-BAND POWER GaAs MES FET	Original	PDF
NE6500179A-T1	NEC	1 W L-Band Power GaAs MES FET	Original	PDF
NE6500179A-T1-AZ	NEC	FET Transistor: 1W L-BAND POWER GaAs MESFET: Tape And Reel	Original	PDF
NE6500379	NEC	3W L, S-BAND POWER GaAs MESFET	Original	PDF
NE6500379A	NEC	3W, L/S-BAND MEDIUM POWER GaAs MESFET	Original	PDF
NE6500379A	NEC	3W L, S-BAND POWER GaAs MESFET	Original	PDF
NE6500379A	NEC	Semiconductor Selection Guide	Original	PDF
NE6500379A	NEC	3W, L/S-BAND MEDIUM POWER GaAs MESFET	Scan	PDF
NE6500379A-AZ	NEC	IC FET MISC MEDIUM POWER GaAs MESFET	Original	PDF
NE6500379A-T1	NEC	3 W L, S-Band Power GaAs MESFET	Original	PDF
NE6500379A-T1	NEC	3W, L/S-BAND MEDIUM POWER GaAs MESFET	Scan	PDF
NE6500496	NEC	Semiconductor Selection Guide	Original	PDF
NE6500496	NEC	4 W L, S-Band Power GaAs FET N-Channel GaAs MES FET	Original	PDF
NE6500496	NEC	L&S BAND MEDIUM POWER GaAs MESFET	Original	PDF

NE6500496	NEC	Semiconductor Selection Guide 1995	Original	PDF
NE6500496-AZ	NEC	FET Transistor: 4W L: S-BAND POWER GaAs FET: N-CHANNEL GaAs MESFET	Original	PDF
NE650103M	California Eastern Laboratories	10 W L & S-BAND POWER GaAs MESFET	Original	PDF
NE650103M	California Eastern Laboratories	NECS 10 W L & S-BAND POWER GaAs MESFET	Original	PDF
NE650103M	NEC	10 W L, S-BAND POWER GaAs MES FET	Original	PDF
NE650103M-A	California Eastern Laboratories	10 W L & S-BAND POWER GaAs MESFET	Original	PDF

NE65 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
1E-16 Abstract: No abstract text available Text: NONLINEAR MODEL NE6510179A SCHEMATIC Q1 RDX 0.2 ohms LGX LG 0.001 nH 0.75 nH LD 0.65 nH LDX 0.01 nH DRAIN RDBX 400 ohms GATE CDS PKG 0.1 pF CBSX 100 pF CGS PKG 0.1 pF RSX 0.05 ohms LSX 0.001 nH SOURCE FET NONLINEAR MODEL PARAMETERS 1 UNITS Parameters Q1	Original	PDF	NE6510179A 1e-16 10e-12 5e-12 20e-12 4e-12 24-Hour
max 16801 pspice Abstract: 40J100 Text: 0.4 W, L&S-BAND MEDIUM POWER GaAs HJ-FET NE651R479A FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel PACKAGE OUTLINE 79A • USABLE TO 3.7 GHz: Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000,	Original	PDF	NE651R479A IMT-2000, NE6501R479A IR35-00-2 24-Hour max 16801 pspice 40J100
Untitled Abstract: No abstract text available Text: 3W, L & S-BAND NE6500379A MEDIUM POWER GaAs MESFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel PACKAGE OUTLINE 79A Source • LOW THERMAL RESISTANCE: 5°C/W Functional Characteristics 0.2 ± 0.1	Original	PDF	NE6500379A IMT-2000, IMT2000, 24-Hour
Untitled Abstract: No abstract text available Text: 1W, L/S-BAND NE6510179A MEDIUM POWER GaAs HJ-FET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: POUT = +31.5 dBm TYP at VDS = 3.5 V, f = 900 MHz POUT = +32.5 dBm TYP at VDS = 3.5 V, f = 1900 MHz	Original	PDF	NE6510179A 24-Hour
6822 FET Abstract: No abstract text available Text: 0.4 W, L&S-BAND MEDIUM POWER GaAs HJ-FET NE651R479A FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel PACKAGE OUTLINE 79A • USABLE TO 3.7 GHz: Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000,	Original	PDF	NE651R479A IMT-2000, NE6501R479A IR35-00-2 24-Hour 6822 FET
NE6510179A Abstract: NE6510179A-T1 Text: DATA SHEET N-CHANNEL GaAs HJ-FET NE6510179A 1 W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE6510179A is a 1 W GaAs HJ-FET designed for middle power transmitter applications for mobile communication and wireless PC LAN systems. It is capable of delivering 1 W of output power CW with high linear	Original	PDF	NE6510179A NE6510179A NE6510179A-T1
NE6501077 Abstract: NEC Microwave Semiconductors Text: PRELIMINARY DATA SHEET L/S BAND MEDIUM POWER GaAs MESFET NE6501077 ABSOLUTE MAXIMUM RATINGS FEATURES TC = 25 °C unless otherwise noted • HIGH OUTPUT POWER: 10 W SYMBOLS PARAMETERS UNITS RATINGS • HIGH LINEAR GAIN: 10.5 dB VDSX Drain to Source Voltage	Original	PDF	NE6501077 NE6501077 24-Hour NEC Microwave Semiconductors
NE6500379A Abstract: NE6500379A-T1 Text: PRELIMINARY DATA SHEET 3W, L/S-BAND MEDIUM POWER NE6500379A GaAs MESFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +35 dBm TYP • HIGH LINEAR GAIN: 10 dB TYP 5.5 BOTTOM 3.8	Original	PDF	NE6500379A NE6500379A NE6500379A-T1 24-Hour NE6500379A-T1
NEC 7808 Abstract: gl 7808 NE6500179A NE6500179A-T1 7808 nec Text: PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NE6500179A 1 W L-BAND POWER GaAs MES FET DESCRIPTION The NE6500179A is a 1 W GaAs MES FET designed for middle power transmitter applications for mobile communication handset and base station systems. It is capable of delivering 1 W of output power CW with high	Original	PDF	NE6500179A NE6500179A NE6500179A-T1 NEC 7808 gl 7808 NE6500179A-T1 7808 nec
nec k 4145 Abstract: NE6510179A NE6510379A NE651R479A NE651R479A-T1 Text: DATA SHEET N-CHANNEL GaAs HJ-FET NE651R479A 0.4 W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE651R479A is a 0.4 W GaAs HJ-FET designed for middle power transmitter applications for mobile communication and wireless PC LAN systems. It is capable of delivering 0.4 W of output power CW with high linear	Original	PDF	NE651R479A NE651R479A NE6510179A NE6510379A. nec k 4145 NE6510379A NE651R479A-T1
Untitled Abstract: No abstract text available Text: NONLINEAR MODEL NE6500379A SCHEMATIC Q1 RDX 0.2 ohms LGX LG 0.001 nH 0.68 nH LD 0.55 nH LDX 0.015 nH DRAIN RDBX 480 ohms GATE CBSX 100 pF CGS PKG 0.1 pF CDS PKG 0.1 pF RSX 0.2 ohms FET NONLINEAR MODEL PARAMETERS 1 LSX 0.001 nH SOURCE Parameters Q1 Parameters	Original	PDF	NE6500379A 1e-14 10e-12 5e-12 25e-12
NE6510179A Abstract: No abstract text available Text: 1W, L/S-BAND NE6510179A MEDIUM POWER GaAs HJ-FET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: POUT = +31.5 dBm TYP at VDS = 3.5 V, f = 900 MHz POUT = +32.5 dBm TYP at VDS = 3.5 V, f = 1900 MHz	Original	PDF	NE6510179A 24-Hour
100A5R1CP150X Abstract: IMT-2000 NE651R479A NE651R479A-A NE651R479A-T1-A ATC 1084 Text: NEC's 1 W, L&S-BAND MEDIUM POWER GaAs HJ-FET NE651R479A FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel PACKAGE OUTLINE 79A • USABLE TO 3.7 GHz: Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000,	Original	PDF	NE651R479A IMT-2000, NE651R479A 100A5R1CP150X IMT-2000 NE651R479A-A NE651R479A-T1-A ATC 1084
NE6510179A Abstract: No abstract text available Text: 3W, L&S-BAND NE6510179A MEDIUM POWER GaAs HJ-FET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel PACKAGE OUTLINE 79A 1.5 – 0.2 4.2 MAX • USABLE TO 3.7 GHz: Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000,	Original	PDF	NE6510179A IMT-2000, 24-Hour

GaAs MESFET Abstract: NE6500379A Text: PRELIMINARY DATA SHEET INIE C 3W, L/S-BAND MEDIUM POWER GaAs MESFET FEATURES_ OUTLINE DIMENSIONS NE6500379A Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE • HIGH OUTPUT POWER: +35 dBm TYP PACKAGE OUTLINE 79A • HIGH LINEAR GAIN: 10 dB TYP	OCR Scan	PDF	NE6500379A NE6500379A GaAs MESFET
Untitled Abstract: No abstract text available Text: DATA SHEET_ N-CHANNEL GaAs MES FET NE6500379A 3W L, S-BAND POWER GaAs MESFET DESCRIPTION The NE6500379A is a 3W GaAs MESFET designed for middle power transmitter applications for mobile communication handset and base station systems. It is capable of delivering 3 watt of output power CW with high	OCR Scan	PDF	NE6500379A NE6500379A NE6500379A-T1
Untitled Abstract: No abstract text available Text: PRELIMINARY DATA SHEET_ N-CHANNEL GaAs HJ-FET NE6510379A 3 W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE6510379A is a 3 W GaAs HJ-FET designed for middle power transmitter applications for mobile communication systems. It is capable of delivering 3 watt of output power 1/3 Duty pulse operation with high linear	OCR Scan	PDF	NE6510379A NE6510379A
x 1535 ce Abstract: 0537 Text: PRELIMINARY DATA SHEET_ N-CHANNEL GaAs HJ-FET NE651R479A 0.4 W L-BAND POWER GaAs HJ-FET DESCRIPTION The N E 651R 479A .is a 0.4 W G a A s HJ-FET designed for middle power transmitter applications for mobile communication systems. It is capable of delivering 0.4 watt of output power CW with high linear gain, high	OCR Scan	PDF	NE651R479A NE6510179A NE6510379A. x 1535 ce 0537
sn 0716 Abstract: NEC D 587 Text: PRELIMINARY DATA SHEET GaAs MES FET NE6500496 4W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET PACKAGE DIMENSION UNIT: mm DESCRIPTION The NE6500496 is power GaAs FET which provides high gain, high efficiency and high output power in L, S band. 1.0 ± 0.1	OCR Scan	PDF	NE6500496 NE6500496 sn 0716 NEC D 587
Untitled Abstract: No abstract text available Text: PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NE650R479A 0.4 W L, S-BAND POWER GaAs MES FET DESCRIPTION The N E 6 5 0 R 4 7 9 A is a 0.4 W G aA s M ES FET d e sig n e d fo r m iddle po w e r tra n sm itte r ap p lica tio n s for m obile co m m u n ica tio n ha nd set and base statio n system s. It is ca p a b le o f d e live rin g 0 .4 w a tt o f o u tp u t po w e r C W w ith high	OCR Scan	PDF	NE650R479A
NEC Microwave Semiconductors Abstract: No abstract text available Text: PRELIMINARY DATA SHEET US BAND MEDIUM POWER GaAs MESFET NE6500496 ABSOLUTE MAXIMUM RATINGS FEATURES_ Tc= 25 °C unless otherwise noted • HIGH OUTPUT POWER: 4 W SYMBOLS PARAMETERS UNITS RATINGS • HIGH LINEAR GAIN: 11.5 dB V d sx Drain to Source Voltage	OCR Scan	PDF	NE6500496 NE6500496 IS12I IS22I2 IS12S21I NEC Microwave Semiconductors
NEC k 1760 Abstract: NE6510179A Text: PRELIMINARY DATA SHEET 1W, L/S-BAND MEDIUM POWER GaAs HJ-FET OUTLINE DIMENSIONS FEATURES NE6510179A Units in mm LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A HIGH OUTPUT POWER: +31.5 dBm TYP @ V d s = 3.5 V, Id s q = 150 mA, f = 850 MHz, Pin = +20 dBm	OCR Scan	PDF	NE6510179A NE6510179A-T1 24-Hour NEC k 1760 NE6510179A
NE650 Abstract: No abstract text available Text: PRELIMINARY DATA SHEET US BAND MEDIUM POWER GaAs MESFET NE6501077 ABSOLUTE MAXIMUM RATINGS FEATURES_ ; Tc = 25 °C unless otherwise noted • HIGH OUTPUT POWER: 10 W SYMBOLS PARAMETERS UNITS RATINGS • HIGH UNEAR GAIN: 10.5 dB V dsx Drain to Source Voltage	OCR Scan	PDF	NE6501077 NE6501077 IS12I IS22I2 IS12I IS12S21I CA95054-1B17 24-Hour NE650
a 1232 nec Abstract: NE6510179A nec 1565 NEC TANTALUM Text: DATA SHEET N-CHANNEL GaAs HJ-FET NE6510179A 1W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE6510179A is a 1YV GaAs HJ-FET designed for middle power transmitter applications for mobile communication systems. It is capable of delivering 1 watt of output power CW with high linear gain, high efficiency	OCR Scan	PDF	NE6510179A NE6510179A a 1232 nec nec 1565 NEC TANTALUM

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NE65 Price and Stock

Tymphany HK Limited NE65W-04

Nexperia PNE650200EJ-QJ

Nexperia PNE650100EJ-QJ

Panduit Corp DNE6522B

California Eastern Laboratories (CEL) NE650103M-A

NE65 Datasheets (80)

NE65 Datasheets Context Search

1E-16

max 16801 pspice

Untitled

Untitled

6822 FET

NE6510179A

NE6501077

NE6500379A

NEC 7808

nec k 4145

Untitled

NE6510179A

100A5R1CP150X

NE6510179A

GaAs MESFET

Untitled

Untitled

x 1535 ce

sn 0716

Untitled

NEC Microwave Semiconductors

NEC k 1760

NE650

a 1232 nec