IMS1625 Search Results

IMS1620-35

Abstract: IMS1620-45 IMS1620-55 IMS1620-70 IMS1620L-35 IMS1620L-45 IMS1620L-55 IMS5788H-5
Contextual Info: - 82 6 4 K x m « it £ PC TAAC max ns) TCAC max (ns) TOE max (ns) CMOS S t a t i c RAM (1 6 3 8 4 X 4 ) A 2 2 P I N & TOH •in (ns) TOD max (ns) TWP nun (ns) TiR max (ns) V D D or V C C (ns) TWD nin (ns) TDS ■in (ns) TDH (V) I DD max (■A) A I I'D STANDBY

Contextual Info: mos IMS IMS IMS IMS IMS IMS 1605: 6 4 K x 1 1625: 1 6 K x 4 1629: 16K x 4 with Output Enable / 1626/7:16K x 4 with Separate I/Os 1635: 8K x 8 1695: 8K x 9 FEATURES • INMOS' Very High Speed Double Metal CMOS • Advanced Process-1.2 Micron Design Rules • 64K Bit Devices

MKB6116

Abstract: MKB4501 IMS1630 RAM MK6116 MK48Z18BU IMS1420 MK48Z02BU
Contextual Info: SELECTION GUIDE ZEROPOW ERS ORGANISATION DESCRIPTION PART NUMBER ICCma SPEEDns ACTIVE TTL mA@ns STBY CMOS STBY VCC TEMP RANGE PACKAGE -2 K X 8 MK48Z02 120,150,200,250 90 3 1 5V + 10 -5% 0 to + 70°C P DIP 24 -2 K X 8 UL-CERTIFIED MK48Z02BU 120,150,200,250

Tantalum Chip Capacitor 107 16K

Abstract: A106C D4321
Contextual Info: m os IMS IMS IMS IMS IMS IMS 1605: 64K 1625: 16K 1629: 16K 1626/7:16K 1635: 8K 1695: 8K x1 x4 x 4 with Output Enable x 4 with Separate l/Os x8 x9 FEATURES • INMOS' Very High Speed Double Melal CMOS • Advanced Process-1.2 Micron Design Rules • 64K Bit Devices

Contextual Info: K 0 A KAOHSIUNG 3bE D m SD4b0fl2 OODDDlt □ • K O A ' f - H u - o \ t - u\.<\ - n - DV u / SEMICONDUCTOR DEVICES * MPU • ROM M bit 16K 32K EPROM M2716 • M 2732 M2764A TS27C64A M27128A M 27256 M27C256B M27512 M27C512 M27C1000 M27C1001 M27C1024 2KX8