H 7555
Abstract: H7555
Text: MEV VS R^kb^l R\k^p S^kfbgZe Sri^.-\K/1 RmZg]Zk].ymJ/ FEASTQER 63 KhZ] eb_^ h_ 7555 ahnkl Ziieb\Zmbhg h_ kbiie^ \nkk^gm Zm 065:uC 73 Rnbm _hk nl^ bg ^e^\mkhgb\ Zg] bg]nlmkbZe ^jnbif^gml ln\a Zl \hfinm^k1 ikh`kZffbg` \hgmkhe ^q\aZg`^k _hk ihp^k lniieb^l _bem^kbg` Zg] ^g^k`r lmhkZ`bg`3
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MEXICO LF 2A 250V 313
Abstract: oscilloscope ox 860 ic D flip flop 7474 RKM 24 sm transistor nino relay cable tracer circuit lm 324 logic pulser application fuse cum power failure indicator riyadh cable 11620A
Text: 5004A SIGNATURE ANALYZER H E W L E T T ihp] PACKARD CERTIFICATION H e w lett-P ackard C om pany c e rtifies th a t this in s tru m e n t m et its p u b lish e d sp e cifica tion s at the tim e o f sh ip m e n t from the factory. H e w le tt-P a c k a rd C o m p a n y fu rth e r c e rtifie s that
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ihp 1c manual
Abstract: IH 15366 IHP 15351 ih 15336 IHP 1C 18 mm ihp 1c 16340 battery IHP 15350 itm 4c-6e ihp 2c
Text: Time switches Contents Presentation 2 Offer overview Choice table Technical data and catalogue numbers 4 6 8 Practical advice 15 A few principles Programming examples 15 16 Updated: 27/8/03 1 Time switches Presentation For all sectors of activity Residential.
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92045E
08-march
17-apr
03-may
07-july
fm/18
ihp 1c manual
IH 15366
IHP 15351
ih 15336
IHP 1C 18 mm
ihp 1c
16340 battery
IHP 15350
itm 4c-6e
ihp 2c
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ihp 1c manual
Abstract: IHP 1c 15720 ihp 1c IHP2C ihp 2c 15722 IHP 15720 Time switches IHP ihp 2c programme 15723
Text: Time switches New Digital 1 and 2 channel programmable time switches Application Programmable time switches control switching of one or more separate circuits according to a stored programme predetermined by the user. common technical data • ■ ■ ■
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Untitled
Abstract: No abstract text available
Text: p yXpX : v « *1 CY7C287 - 64K x 8 Reprogrammable Registered PROM put enable that can be programmed to be synchronous Es or asynchronous (E). It is available in a 28-pin, 300-mil package. The address set-up time is 45 nsand the time from clock HIGH to output valid is 15 ns.
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CY7C287
300-mil
28-pin,
CY7C287
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GFK 77
Abstract: ez 639 hk relay ZM6A
Text: /5}yz+~ .HF<FD/ 79|1.2.{896* -.,- 43;*6 6*0{< +A>KLIAJ Q 6 Fhkf A Zg] 6 Fhkf C \hg_b`nkZmbhgl Q Hb`a i^k_hkfZg\^1 Lhp ikh_be^ Q 7KV ]b^e^\mkb\ lmk^g`ma .[^mp^^g \hbe Zg] \hgmZ\ml/ Q VDE 5;86 4 5<55 Fbe^ Nh3?E6889=6 Q UL>91 V251 CTI7:5 _eZffZ[bebmr \eZll Q Egobkhgf^gmZe _kb^g]er ikh]n\m ZoZbeZ[e^ .RhHS \hfiebZgm/
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E6889
79VDC/
X65555
GFK 77
ez 639
hk relay
ZM6A
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pal20ra10 mmi
Abstract: PAL20RA10
Text: COM’L : -20/std MIL: std Advanced Micro Devices PAL20RA10/-20 24-pin Asynchronous TTL Programmable Array Logic DISTINCTIVE CHARACTERISTICS • As fast as 20 ns maximum propagation delay and 30 MHz fMAx ■ Individually programmable asynchronous clock, preset, reset, and enable
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-20/std
PAL20RA10/-20
24-pin
28-pin
PAL20RA10
0232-010A
pal20ra10 mmi
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LH 2A
Abstract: BF 145 acgf gmcad GM OB on 707 kh2a pj 85 lv
Text: <:E2 +>;7.2:, EB?=8 EF5F9 D9?5J :OLZ[XOY \ yx BGINMgvx HNMINM ?HK lv EH:= :M lo {BE> ,Hht zkmmnrk \ .AHMH BLHE:MBHG \ wNBEMgBG LGN;>K \ 8>KH <KHLL HK K:G=HF MNKGgHG {BE> ,Hht 0ljlnnmk \ .KBGM>= <BK<NBM ;H:K= FHNGM \ 0H}1 <HFIEB:GM {BE> ,Hht x/xjljjkjjksnp
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89E7D
LH 2A
BF 145
acgf
gmcad
GM OB
on 707
kh2a
pj 85 lv
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aS3131
Abstract: u2331
Text: CY7C245A P YP: V « *1 i. X - 2K x 8 Reprogrammable Registered PROM Features Functional Description • Windowed for reprogrammability • CMOS for optimum speed/power The CY7C245A is a high-performance, 2K x 8, electrically pro grammable, read only memory packaged in a slim 300-mil
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15-ns
300-mil,
24-pin
CY7C245A
CY7C245A
aS3131
u2331
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DBF60B
Abstract: DBA40C DD50F oba3 DBB10C
Text: High-speed Rectifiers Super fast recovery diodes Vrm 00 400 »0 10 » . OFJIOC DFJ10G 100 DO-41 SS 5 r m 15 DFD15C DFD15E DFD15G 100 DO-15L 3.0 DFE30C DFE30E DFE30G 100 00-201 AD 1.0 .DFJ1DE. " Package type
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DFD15C
DFE30C
DFD15E
DFE30E
DFJ10G
DFD15G
DFE30G
DO-41
DO-15L
DLE30B
DBF60B
DBA40C
DD50F
oba3
DBB10C
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EZ 649
Abstract: y 649 Y9649 Bc 649 2dcc A56A IK 3 QL-37 492A24C6A nl 746
Text: 97;2.97;2-C 2DC?=?C:E6 A6<2G 7LIVWTLU * 8;B fhmhk eh\d^] ehZ] * Fqmk^f^er lfZee k^eZr * Lhp ib\d3ni mri^ ZoZbeZ[e^ Rbg`e^ * Rbg`e^ Zg] mpbg o^klbhg ZoZbeZ[e^ Spbg * Dhbe pbk^ bglneZmbhg \eZll I /7>6 0 CZSNJIO 2SSONJIVNRQU * IGKB3S /k^_ehp lhe]^kbg` o^klbhg0 ZoZbeZ[e^
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492A24C6A
EZ 649
y 649
Y9649
Bc 649
2dcc
A56A
IK 3
QL-37
nl 746
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Untitled
Abstract: No abstract text available
Text: ÿi CY7C225A ~ 5 1 2 x 8 Registered PROM PRELIMINARY 7J= CYPRESS ^ SEMICONDUCTOR Features • CMOS for optimum speed/power • High speed — 18 ns max set-up — 12 ns clock to output • Low power — 495 mW commercial — 660 mW (military) • Synchronous and asynchronous out
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CY7C225A
300-m
24-pin
28-pin
28-pin
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ihp 1c manual
Abstract: Nsx160b DC 24V double POLE MCB Schneider IC60N C CURVE A9C62216 schneider 15336 SCHNEIDER MCB
Text: Acti 9 Advanced Communication Technology that Inspires…… Leading Future. >Innovative >Efficient >Reliable About Schneider Electric About Schneider Electric As a global specialist in energy management, Schneider Electric offers integrated solutions across
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Untitled
Abstract: No abstract text available
Text: G A Z E L L E M ICR O CIR C U ITS INC 14E 0 § 3 â 3 t,[m 0000033 5 | GA23SV8/GA23S8 g a z e lle High-Perform ance Logic D evice G allium A rsenide _ G eneral D escription Gazelle’s GA23SV8/GA23S8 are TTL-compatible high-perform ance logic sequencers. Based on the familiar programmable
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GA23SV8/GA23S8
GA23SV8/GA23S8
a20-pin
GA23SV8
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pj 85 lv
Abstract: acgf
Text: <:E3 +>;7.3:, EB?=8 EF5F9 D9?5J :OLZ[XOY ] lojj4 =B>E><MKB< LMK>G@MA ] pjj4 ;EH<DBG@ OHEM:@> ] .AHMH BLHE:MBHG {BE> ,Hht 0ljlnnmk ] 8>KH <KHLL HK K:G=HF MNKGgHG ] .KBGM>= <BK<NBM ;H:K= FHNGM ] 0H}1 <HFIEB:GM {BE> ,Hht x/xjljjkjjksnm =ACGF c2v u lo 89E7D=CF=BA
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89E7D
pj 85 lv
acgf
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Untitled
Abstract: No abstract text available
Text: GA23SV8/GA23S8 High-Perform ance Logic Device Gallium Arsenide gazelle _ G eneral Description Features Gazelle’s GA23SV8/GA23S8 are TTL-compatible high-performance logic sequencers. Based on the fam iliar programmable array logic architecture, they provide highest performance and
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GA23SV8/GA23S8
GA23SV8/GA23S8
20-pin
GA23SV8
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B85 diode
Abstract: DIODE B89 IRGPC50KD2
Text: 09/01/94 1 1 ;IS i 57 I n t e r n a t 'I R e c tifie r - > Product In fo rn ai ion Page 002 P D - 9.1123 International S Rectifier IRGPC50KD2 Short Circuit Rated UHraFasl CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFASI SOF T RECOVERY DIODE Features
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IRGPC50KD2
-10jj3
O-247AC
B85 diode
DIODE B89
IRGPC50KD2
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27C512
Abstract: CY27C512 CY27C512-150WC 27C512-70
Text: ¥ CYPRESS Features • C M O S for optim um speed/pow er • High speed — tAA = 70 n s max. Low power • — 220 m W m ax. — L ess than 85 mW w hen d eselected • Byte-w ide m em ory organization • 100% reprogram m able in the w indow ed package •
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CY27C512
-32-pin
28-pin
28-pin,
600-mil
32-pin
27C512
CY27C512-150WC
27C512-70
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U30M
Abstract: No abstract text available
Text: CEN-100 1 33W Si ngl e O u t pu t LED P o we r Suppl y scries • F — t - re r : J itrsdl AC i-'pui.-Ful ranq* ■ r rcilédüins.Short cirüuil .■Cvtflsac Uvé-r votings: Cvtr 1*nip£ra1u r* ■ dulpul *o l.iq“ M C M tb n l cürr«-n1Isvsl adHntPMe
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CEN-100
U30M
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Untitled
Abstract: No abstract text available
Text: SIEM ENS Multistandard Sound IF TDA 6160-2X Prelim inary Data Bipolar IC Features • • • • • • • • Sound carrier mixer VCO Porgram mable Divider Reference divider with crystal oscillator Phase com parator O perational am plifier for PLL filter
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6160-2X
Q67000-A5085
P-DSO-28
10-kHz
UES04065
UED03424
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Untitled
Abstract: No abstract text available
Text: CY7C265 y CYPRESS 8K x 8 Registered PROM F ea tu res F u n ctio n a l D escrip tio n • T h e C Y 7C 265 is a 8192 x 8 re g iste re d P R O M . It is o rg an ized as 8,192 w o rd s by 8 b its w ide, an d has a p ip e lin e o u tp u t re g ister. In a d d itio n , th e d ev ice fe a tu re s a
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CY7C265
28-Pin
300-M
CY7C265
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Untitled
Abstract: No abstract text available
Text: SIEMENS 3.3V 1M x 64-Bit SDRAM Module 3.3V 1M x 72-Bit SDRAM Module HYS64V1000GU HYS72V1000GU 168 pin unbuffered DIMM Modules Preliminary Information • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual-In-Line SDRAM Module • 1 bank 1M x 64, 1M x 72 organisation
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64-Bit
72-Bit
HYS64V1000GU
HYS72V1000GU
HYS64
V1000GU
fl235bOS
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Untitled
Abstract: No abstract text available
Text: .MY II un Al w i u n u f f i i 1 M x HY51162602CAS Series &W PB 1 6 _b j t C M 0 S D R A M w j t h DESCRIPTION The HY5116260 is the new generation and tast dynamic RAM organized 1,048,576 x 16-bit. The HY5116260 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
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HY51162602CAS
HY5116260
16-bit.
1AD12-10-MAY94
HY5116260JC
HY5116260SLJC
HY5116260TC
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phc51
Abstract: A0317
Text: HYUNDAI H Y 5 1 V 1 6 1 6 0 B S e r ie s 1 M x 16-bit CMOS DRAM with 2ÜÄ5 DESCRIPTION T he H Y51V 16160B is th e new generation and fa st dynam ic RAM organized 1,048,576 x 16-bit. The HY51V16160B utilizes Hyundai’s CM OS silicon gate process technology as well as advanced circuit techniques
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16-bit
16160B
16-bit.
HY51V16160B
42/42pin
D55-10-MA
HY51V16160BJC
616CIBSIJC
phc51
A0317
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