IGG1 Search Results

RMPA2450

Abstract: C4 MMIC HIGH POWER AMPLIFIER 5 W FOR 2.4 GHz F245
Contextual Info: RMPA2450 2.4 to 2.5 GHz GaAs MMIC Power Amplifier PRODUCT INFORMATION Description Features Absolute Ratings Electrical Characteristics Note 4, At 25°C, Zo=50 Ohms, Unless Otherwise Noted The Fairchild RF RMPA2450 is a fully matched monolithic power amplifier in a surface

1M x 16 16-MBIT DYNAMIC RAM WITH EDO PAGE MODE

Contextual Info: HB56HW164DB Series, HB56HW165DB Series 1,048,576-word x 64-bit High Density Dynamic RAM Module HITACHI ADE-203-699B Z Rev.2.0 Jun. 5, 1997 Description The HB56HW164DB is a 1M x 64 dynamic RAM Small Outline Dual In-line Memory Module (S.O.DIMM), mounted 4 pieces of 16-Mbit DRAM (HM51W16165) sealed in TSOP package and 1 pieces

Nippon capacitors

Contextual Info: HB56A832BS/SBS Series, HB56A432BR/SBR Series 8,388,608-word x 32-bit High Density Dynamic RAM Module 4,194,304-word x 32-bit High Density Dynamic RAM Module HITACHI ADE-203-728A Z Rev.1.0 Feb. 20, 1997 Description The HB56A832BS/SBS is a 8M x 32 dynamic RAM module, mounted 16 pieces of 16-Mbit DRAM

Nippon capacitors

Contextual Info: HB56AW272E-5/6/7 2,097,152-word x 72-bit High Density Dynamic RAM Module HITACHI ADE-203-746A Z Rev. 1.0 Feb. 28, 1997 Description The HB56AW272E belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications. The

HB56A1632B-5

Abstract: Nippon capacitors
Contextual Info: HB56A1636 Series, HB56A1632 Series 16.777.216-word x 36-bit High Density Dynamic RAM Module 16.777.216-word x 32-bit High Density Dynamic RAM Module HITACHI ADE-203-752A Z Rev.1.0 Feb. 27, 1997 Description The HB56A1636 is a 16M X 36 dynamic RAM module, mounted 36 pieces of 16-Mbit DRAM

AD7510DIJD

Abstract: AD7512D1 AD7510D1JN ad7512d AD751001 AD7512DI transistor CQ 548 npn AD7510DIKD AD7510DI AD7511DI
Contextual Info: ANALOG DEVICES DI CMOS Protected Analog Switches i&ui FEATURES - í& f ^ a tís I Latch-Proof Overvolitage-Proof: ± 2 5 V Low R o n : 75i2 Low Dissipation: 3m W T T L /C M O S Direct Interface Silicon-Nitride Passivated M ono lith ic Dielectrically-Isolated CMOS

Nippon capacitors

Contextual Info: HB56A264EJ-5/6/7 2,097,152-word x 64-bit High Density Dynamic RAM Module HITACHI ADE-203-740A Z Rev. 1.0 Feb. 7, 1997 Description The HB56A264EJ belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications. The

RA45H8994M1-101

Abstract: G marking RA45H8994M1 POUT18 lta 601
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA45H8994M1 RoHS Compliance, 896-941MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H8994M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 896- to

RF MOSFET MODULE

Abstract: RA45H7687M1 RA45H7687M1-101
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA45H7687M1 RoHS Compliance, 763-870MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H7687M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 763- to

MC-4516CD645FA-A1

Contextual Info: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-4516CD645 16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-4516CD645 is a 16,777,216 words by 64 bits synchronous dynamic RAM module on which 16 pieces of

Contextual Info: HMC463LP5 / 463LP5E v08.0511 Amplifiers - low Noise - smT 7 GaAs pHEMT MMIC LOW NOISE AGC AMPLIFIER, 2 - 20 GHz Typical Applications Features The HmC463lp5 e is ideal for: Gain: 13 dB • Telecom Infrastructure Noise figure: 2.8 dB @ 10 GHz • Microwave Radio & VSAT

Contextual Info: HMC463LH250 v04.1010 AMPLIFIERS - LOW NOISE - SMT 7 GaAs pHEMT MMIC LOW NOISE AGC AMPLIFIER, 2 - 20 GHz Typical Applications Features The HMC463LH250 is ideal for: 50 Ohm Matched Input/Output • Telecom Infrastructure Hermetic SMT Package • Microwave Radio & VSAT

hd66840fs

Abstract: HD61100A Hitachi LCD 1602 sony x35 lcd HD66710FS HCD66205L HD66840 HD44100H UPILEX VT hd44105
Contextual Info: Hitachi LCD Controller/Driver LSI Data Book Index 04.10.1996 17:44 Uhr Seite 3 INDE X General Information LCD Driver Character Display LCD Controller/Driver Graphic Display LCD Driver for Small System Graphic Display LCD Driver 1 Negative LCD Power Supply Type

hd61103a

Abstract: HD61830LCD
Contextual Info: HD61103A- Dot Matrix Liquid Crystal Graphic Display Com m on Driver SECTION DESCRIPTION 1 The H D 6 1 1 0 3 A is a conmon signal driver for dot m a t r i x liquid crystal graphic display systems. It generates the timing signals (switch signal to convert LCD w a v e f o r m to

Contextual Info: AM142540MM-BM-R November 2007 Rev. 6 DESCRIPTION AMCOM’s AM142540MM-BM-R is part of the GaAs HiFET MMIC power amplifier series. It is a 2-stage GaAs HIFET MESFET MMIC power amplifier biased at 14V. The input and inter-stage matching networks cover 1.4 to

Contextual Info: AM142540MM-BM-R AM142540MM-FM-R Aug 2010 Rev 8 GaAs MMIC Power Amplifier DESCRIPTION AMCOM’s AM142540MM-BM/FM-R is part of the GaAs HiFET MMIC power amplifier series. It is a 2-stage GaAs MESFET MMIC power amplifier biased at 14V. The input and inter-stage matching networks cover 1.4 to 2.5GHz.

RMPA2450

Abstract: RMPA2550 RF power amplifier MHz
Contextual Info: RMPA2450 2.4–2.5 GHz GaAs MMIC Power Amplifier General Description Features The Fairchild RMPA2450 is a fully monolithic power amplifier in a surface mount package for use in wireless applications in the 2.4 to 2.5GHz ISM frequency band. The amplifier may be biased for linear, class AB or class F for

RA45H7687M1

Abstract: RA45H7687M1-101 45WATT DD 128 D transistor
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA45H7687M1 RoHS Compliance, 764-870MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H7687M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 764- to

RA45H8994M1

Abstract: RA45H8994M1-101
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA45H8994M1 RoHS Compliance, 896-941MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H8994M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 896- to

ICS 1210 Pressure Sensor

Abstract: 1210 pressure sensor ics gsm transceiver schematics for a PA amplifier design of multi section directional coupler gsm signal amplifier pressure sensor sp 20 BSR14 CGY2010G CGY2011G
Contextual Info: INTEGRATED CIRCUITS DATA SHEET CGY2010G; CGY2011G GSM 4 W power amplifiers Objective specification Supersedes data of 1995 Oct 25 File under Integrated Circuits, IC17 1996 Jul 08 Philips Semiconductors Objective specification GSM 4 W power amplifiers CGY2010G; CGY2011G

AN97034

Abstract: CGY2021G
Contextual Info: APPLICATION NOTE Application of the CGY2021G power amplifier AN97034 Philips Semiconductors Philips Semiconductors CGY2021G DCS/PCS power amplifier Application Note Abstract The CGY2021G is a monolithic GaAs power amplifier for transmission DCS/PCS applications.

PD23C64040AL

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT _ /IPD23C64040AL 64M-BIT MASK-PROGRAMMABLE ROM 8M-WORD BY 8-BIT BYTE MODE / 4M-WORD BY 16-BIT(WORD MODE) PAGE ACCESS MODE Description The /¿PD23C64040AL is a 67,108,864 bits mask-programmable ROM. The word organization is selectable (BYTE

Nippon capacitors

Contextual Info: HB56A464EJ-5/6/7 4,194,304-word x 64-bit High Density Dynamic RAM Module HITACHI ADE-203-741A Z Rev. 1.0 Feb. 7, 1997 Description The HB56A464EJ belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications. The

Nippon capacitors

Contextual Info: HB56A464EJ-5/6/7 4,194,304-word x 64-bit High Density Dynamic RAM Module HITACHI ADE-203-741A Z Rev. 1.0 Feb. 7, 1997 Description The HB56A464EJ belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications. The