RMPA2450
Abstract: C4 MMIC HIGH POWER AMPLIFIER 5 W FOR 2.4 GHz F245
Text: RMPA2450 2.4 to 2.5 GHz GaAs MMIC Power Amplifier PRODUCT INFORMATION Description Features Absolute Ratings Electrical Characteristics Note 4, At 25°C, Zo=50 Ohms, Unless Otherwise Noted The Fairchild RF RMPA2450 is a fully matched monolithic power amplifier in a surface
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RMPA2450
RMPA2450
50-Ohm
G654216
RMPA2450-TB)
C4 MMIC
HIGH POWER AMPLIFIER 5 W FOR 2.4 GHz
F245
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RA45H8994M1-101
Abstract: G marking RA45H8994M1 POUT18 lta 601
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA45H8994M1 RoHS Compliance, 896-941MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H8994M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 896- to
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RA45H8994M1
896-941MHz
RA45H8994M1
45-watt
941-MHz
RA45H8994M1-101
G marking
POUT18
lta 601
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RF MOSFET MODULE
Abstract: RA45H7687M1 RA45H7687M1-101
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA45H7687M1 RoHS Compliance, 763-870MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H7687M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 763- to
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RA45H7687M1
763-870MHz
RA45H7687M1
45-watt
870-MHz
RF MOSFET MODULE
RA45H7687M1-101
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Untitled
Abstract: No abstract text available
Text: HMC463LP5 / 463LP5E v08.0511 Amplifiers - low Noise - smT 7 GaAs pHEMT MMIC LOW NOISE AGC AMPLIFIER, 2 - 20 GHz Typical Applications Features The HmC463lp5 e is ideal for: Gain: 13 dB • Telecom Infrastructure Noise figure: 2.8 dB @ 10 GHz • Microwave Radio & VSAT
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HMC463LP5
463LP5E
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Untitled
Abstract: No abstract text available
Text: HMC463LH250 v04.1010 AMPLIFIERS - LOW NOISE - SMT 7 GaAs pHEMT MMIC LOW NOISE AGC AMPLIFIER, 2 - 20 GHz Typical Applications Features The HMC463LH250 is ideal for: 50 Ohm Matched Input/Output • Telecom Infrastructure Hermetic SMT Package • Microwave Radio & VSAT
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HMC463LH250
HMC463LH250
MIL-PRF-38535
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hd66840fs
Abstract: HD61100A Hitachi LCD 1602 sony x35 lcd HD66710FS HCD66205L HD66840 HD44100H UPILEX VT hd44105
Text: Hitachi LCD Controller/Driver LSI Data Book Index 04.10.1996 17:44 Uhr Seite 3 INDE X General Information LCD Driver Character Display LCD Controller/Driver Graphic Display LCD Driver for Small System Graphic Display LCD Driver 1 Negative LCD Power Supply Type
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HD66330T
hd66840fs
HD61100A
Hitachi LCD 1602
sony x35 lcd
HD66710FS
HCD66205L
HD66840
HD44100H
UPILEX VT
hd44105
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li3301
Abstract: LI330 SC3445 s19a10 8yx5
Text: Silan Semiconductors SC3445 10-DIGIT SCIENTIFIC CALCULATOR DESCRIPTION 31 30 29 28 27 26 25 39 24 40 23 41 22 42 21 The SC3445 is a one-chip CMOS LSI for a hand calculator with 20 mathematical functions and a 10 digits variable mode exponential 43 44 45 type liquid crystal display.
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SC3445
10-DIGIT
SC3445
12X16X4
100kHz
li3301
LI330
s19a10
8yx5
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Untitled
Abstract: No abstract text available
Text: AM142540MM-BM-R November 2007 Rev. 6 DESCRIPTION AMCOM’s AM142540MM-BM-R is part of the GaAs HiFET MMIC power amplifier series. It is a 2-stage GaAs HIFET MESFET MMIC power amplifier biased at 14V. The input and inter-stage matching networks cover 1.4 to
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AM142540MM-BM-R
AM142540MM-BM-R
40dBm)
AM132740MM-BM.
MMIC01
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Untitled
Abstract: No abstract text available
Text: AM142540MM-BM-R AM142540MM-FM-R Aug 2010 Rev 8 GaAs MMIC Power Amplifier DESCRIPTION AMCOM’s AM142540MM-BM/FM-R is part of the GaAs HiFET MMIC power amplifier series. It is a 2-stage GaAs MESFET MMIC power amplifier biased at 14V. The input and inter-stage matching networks cover 1.4 to 2.5GHz.
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AM142540MM-BM-R
AM142540MM-FM-R
AM142540MM-BM/FM-R
400MHz
40dBm)
AM142540MM-BM/FM-R
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RMPA2450
Abstract: RMPA2550 RF power amplifier MHz
Text: RMPA2450 2.4–2.5 GHz GaAs MMIC Power Amplifier General Description Features The Fairchild RMPA2450 is a fully monolithic power amplifier in a surface mount package for use in wireless applications in the 2.4 to 2.5GHz ISM frequency band. The amplifier may be biased for linear, class AB or class F for
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RMPA2450
RMPA2450
31dBm
28dBm
RMPA2550
RF power amplifier MHz
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RA45H7687M1
Abstract: RA45H7687M1-101 45WATT DD 128 D transistor
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA45H7687M1 RoHS Compliance, 764-870MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H7687M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 764- to
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RA45H7687M1
764-870MHz
RA45H7687M1
45-watt
870-MHz
RA45H7687M1-101
45WATT
DD 128 D transistor
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RA45H8994M1
Abstract: RA45H8994M1-101
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA45H8994M1 RoHS Compliance, 896-941MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H8994M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 896- to
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RA45H8994M1
896-941MHz
RA45H8994M1
45-watt
941-MHz
RA45H8994M1-101
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ICS 1210 Pressure Sensor
Abstract: 1210 pressure sensor ics gsm transceiver schematics for a PA amplifier design of multi section directional coupler gsm signal amplifier pressure sensor sp 20 BSR14 CGY2010G CGY2011G
Text: INTEGRATED CIRCUITS DATA SHEET CGY2010G; CGY2011G GSM 4 W power amplifiers Objective specification Supersedes data of 1995 Oct 25 File under Integrated Circuits, IC17 1996 Jul 08 Philips Semiconductors Objective specification GSM 4 W power amplifiers CGY2010G; CGY2011G
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CGY2010G;
CGY2011G
CGY2010G
CGY2011G
-129uctors
SCA50
647021/1200/02/pp12
ICS 1210 Pressure Sensor
1210 pressure sensor ics
gsm transceiver
schematics for a PA amplifier
design of multi section directional coupler
gsm signal amplifier
pressure sensor sp 20
BSR14
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AN97034
Abstract: CGY2021G
Text: APPLICATION NOTE Application of the CGY2021G power amplifier AN97034 Philips Semiconductors Philips Semiconductors CGY2021G DCS/PCS power amplifier Application Note Abstract The CGY2021G is a monolithic GaAs power amplifier for transmission DCS/PCS applications.
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CGY2021G
AN97034
CGY2021G
AN97034
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Nippon capacitors
Abstract: No abstract text available
Text: HB56A832BS/SBS Series, HB56A432BR/SBR Series 8,388,608-word x 32-bit High Density Dynamic RAM Module 4,194,304-word x 32-bit High Density Dynamic RAM Module HITACHI ADE-203-728A Z Rev.1.0 Feb. 20, 1997 Description The HB56A832BS/SBS is a 8M x 32 dynamic RAM module, mounted 16 pieces of 16-Mbit DRAM
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HB56A832BS/SBS
HB56A432BR/SBR
608-word
32-bit
304-word
ADE-203-728A
16-Mbit
HM5117400)
Nippon capacitors
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Nippon capacitors
Abstract: No abstract text available
Text: HB56AW272E-5/6/7 2,097,152-word x 72-bit High Density Dynamic RAM Module HITACHI ADE-203-746A Z Rev. 1.0 Feb. 28, 1997 Description The HB56AW272E belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications. The
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HB56AW272E-5/6/7
152-word
72-bit
ADE-203-746A
HB56AW272E
16-Mbit
HM51W17800)
16-bit
74LVT16244)
Nippon capacitors
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HB56A1632B-5
Abstract: Nippon capacitors
Text: HB56A1636 Series, HB56A1632 Series 16.777.216-word x 36-bit High Density Dynamic RAM Module 16.777.216-word x 32-bit High Density Dynamic RAM Module HITACHI ADE-203-752A Z Rev.1.0 Feb. 27, 1997 Description The HB56A1636 is a 16M X 36 dynamic RAM module, mounted 36 pieces of 16-Mbit DRAM
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HB56A1636
HB56A1632
216-word
36-bit
32-bit
ADE-203-752A
16-Mbit
HM5116100)
HB56A1632B-5
Nippon capacitors
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AD7510DIJD
Abstract: AD7512D1 AD7510D1JN ad7512d AD751001 AD7512DI transistor CQ 548 npn AD7510DIKD AD7510DI AD7511DI
Text: ANALOG DEVICES DI CMOS Protected Analog Switches i&ui FEATURES - í& f ^ a tís I Latch-Proof Overvolitage-Proof: ± 2 5 V Low R o n : 75i2 Low Dissipation: 3m W T T L /C M O S Direct Interface Silicon-Nitride Passivated M ono lith ic Dielectrically-Isolated CMOS
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AD7510DI,
AD7511DI
AD7512DI
400pA)
AD7510DI
14-PIN
AD7512D1
AD7512D1
AD7510DIJD
AD7510D1JN
ad7512d
AD751001
transistor CQ 548 npn
AD7510DIKD
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Nippon capacitors
Abstract: No abstract text available
Text: HB56A264EJ-5/6/7 2,097,152-word x 64-bit High Density Dynamic RAM Module HITACHI ADE-203-740A Z Rev. 1.0 Feb. 7, 1997 Description The HB56A264EJ belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications. The
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HB56A264EJ-5/6/7
152-word
64-bit
ADE-203-740A
HB56A264EJ
16-Mbit
HM5117800)
16-bit
74ABT16244)
Nippon capacitors
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MC-4516CD645FA-A1
Abstract: No abstract text available
Text: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-4516CD645 16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-4516CD645 is a 16,777,216 words by 64 bits synchronous dynamic RAM module on which 16 pieces of
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MC-4516CD645
16M-WORD
64-BIT
MC-4516CD645
uPD4564841
MC-4516CD645-A1
MC-4516CD645FA-A1
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hd61103a
Abstract: HD61830LCD
Text: HD61103A- Dot Matrix Liquid Crystal Graphic Display Com m on Driver SECTION DESCRIPTION 1 The H D 6 1 1 0 3 A is a conmon signal driver for dot m a t r i x liquid crystal graphic display systems. It generates the timing signals (switch signal to convert LCD w a v e f o r m to
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HD61103A
COM64
COM65
C0M100
HD61103A
HD61830LCD
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PD23C64040AL
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT _ /IPD23C64040AL 64M-BIT MASK-PROGRAMMABLE ROM 8M-WORD BY 8-BIT BYTE MODE / 4M-WORD BY 16-BIT(WORD MODE) PAGE ACCESS MODE Description The /¿PD23C64040AL is a 67,108,864 bits mask-programmable ROM. The word organization is selectable (BYTE
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uPD23C64040AL
64M-BIT
16-BIT
PD23C64040AL
44-pin
48-pin
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Nippon capacitors
Abstract: No abstract text available
Text: HB56A464EJ-5/6/7 4,194,304-word x 64-bit High Density Dynamic RAM Module HITACHI ADE-203-741A Z Rev. 1.0 Feb. 7, 1997 Description The HB56A464EJ belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications. The
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HB56A464EJ-5/6/7
304-word
64-bit
ADE-203-741A
HB56A464EJ
16-Mbit
HM5116400)
16-bit
74ABT16244)
Nippon capacitors
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Nippon capacitors
Abstract: No abstract text available
Text: HB56A464EJ-5/6/7 4,194,304-word x 64-bit High Density Dynamic RAM Module HITACHI ADE-203-741A Z Rev. 1.0 Feb. 7, 1997 Description The HB56A464EJ belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications. The
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HB56A464EJ-5/6/7
304-word
64-bit
ADE-203-741A
HB56A464EJ
16-Mbit
HM5116400)
16-bit
74ABT16244)
Nippon capacitors
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