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    IGCT HIGH Search Results

    IGCT HIGH Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    High-End-Gas-Cooker Renesas Electronics Corporation High-End Gas Cooker Reference Design Visit Renesas Electronics Corporation
    GC321AD7LP103KX18J Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GC331AD7LQ153KX18J Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GC331CD7LQ473KX19K Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GC343DD7LP334KX18K Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd

    IGCT HIGH Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    the calculation of the power dissipation for the igbt and the inverse diode in circuits

    Abstract: IGCT 10 kw schematic induction heating "the calculation of the power dissipation for the igbt and the inverse diode in circuits" IGCT thyristor calculation of IGBT snubber snubber IGCT IEGT abb press-pack igbt igbt inverter schematic induction heating
    Text: Positive development in power electronics New 5.2kV Extra Fast Recovery Diode for IGBT and IGCT Applications. New 5.2 kV Extra Fast Recovery Diode for IGBT and IGCT Applications A. Golland, F. J. Wakeman, G. Li Westcode Semiconductors Ltd, Langley Park, Chippenham, SN15 1GE, UK


    Original     		PDF

    7000UC

    Abstract: 5SDF16L4502 106A2 16L4502
    Text: Key Parameters VRRM = 4500 IFAVM = 1300 IFRMS = 2000 IFSM = 33 VF0 = 2.00 rF = 0.55 VDClink = 2800 Fast Recovery Diode for IGCT applications V A A kA V mΩ V 5SDF 16L4502 MARKETING INFORMATION Doc. No. 5SYA 1153-00 Feb. 99 Features • Patented free-floating silicon technology


    Original     		16L4502 CH-5600 7000UC 5SDF16L4502 106A2 16L4502 PDF

    snubber IGCT

    Abstract: No abstract text available
    Text: Key Parameters VRRM = 4500 IFAVM = 950 IFRMS = 1500 IFSM = 24 VF0 = 1.94 rF = 0.86 VDClink = 2800 Fast Recovery Diode for IGCT applications V A A kA V mΩ V 5SDF 10H4502 PRELIMINARY Doc. No. 5SYA 1115-03 Feb. 99 Features • Patented free-floating technology


    Original     		10H4502 CH-5600 snubber IGCT PDF

    Untitled

    Abstract: No abstract text available
    Text: Key Parameters VRRM = 4500 IFAVM = 255 IFRMS = 400 IFSM = 5 VF0 = 2.00 rF = 3.8 VDClink = 2800 Fast Recovery Diode for IGCT applications V A A kA V mΩ V 5SDF 03D4502 PRELIMINARY Doc. No. 5SYA 1117-02 Feb. 99 Features • Patented free-floating technology


    Original     		03D4502 CH-5600 PDF

    snubber IGCT

    Abstract: No abstract text available
    Text: VRRM IFAVM IFRMS IFSM VF0 rF VDClink = = = = = = = 4500 950 1500 24 1.94 0.86 2800 Fast Recovery Diode for IGCT applications V A A kA V mΩ V 5SDF 10H4502 PRELIMINARY Doc. No. 5SYA 1115-03 Feb. 99 • • • • • Patented free-floating technology Industry standard housing


    Original     		10H4502 CH-5600 snubber IGCT PDF

    IGCT

    Abstract: 5SDF03D4502
    Text: VRRM IFAVM IFRMS IFSM VF0 rF VDClink = = = = = = = 4500 255 400 5 2.00 3.8 2800 Fast Recovery Diode for IGCT applications V A A kA V mΩ V 5SDF 03D4502 PRELIMINARY Doc. No. 5SYA 1117-02 Feb. 99 • • • • • Patented free-floating technology Industry standard housing


    Original     		03D4502 CH-5600 IGCT 5SDF03D4502 PDF

    igct abb

    Abstract: 16L45 IGCT a7000 5SDF16L4502
    Text: VRRM IFAVM IFRMS IFSM VF0 rF VDClink = = = = = = = 4500 1300 2000 33 2.00 0.55 2800 Fast Recovery Diode for IGCT applications V A A kA V mΩ V 5SDF 16L4502 MARKETING INFORMATION Doc. No. 5SYA 1153-00 Feb. 99 • • • • • Patented free-floating silicon technology


    Original     		16L4502 CH-5600 igct abb 16L45 IGCT a7000 5SDF16L4502 PDF

    snubber IGCT

    Abstract: ABB Semiconductors 5SYA1106-02
    Text: VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 4500 320 5 2 1.5 2400 V A kA V mΩ Ω V Fast Recovery Diode 5SDF 03D4501 Doc. No. 5SYA1106-02 Sep. 01 • Patented free-floating silicon technology • Low switching losses • Optimized to use as snubber and clamp diode in GTO and IGCT converters


    Original     		03D4501 5SYA1106-02 CH-5600 snubber IGCT ABB Semiconductors PDF

    IGCT

    Abstract: snubber IGCT
    Text: VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 4500 320 5 2 1.5 2400 V A kA V Fast Recovery Diode 5SDF 03D4501 mΩ V Doc. No. 5SYA 1106-02 Aug. 2000 • Patented free-floating silicon technology • Low switching losses • Optimized to use as snubber and clamp diode in GTO and IGCT converters


    Original     		03D4501 CH-5600 IGCT snubber IGCT PDF

    snubber IGCT

    Abstract: No abstract text available
    Text: Key Parameters VRRM = 4500 IFAVM = 320 IFRMS = 500 IFSM = 5 VF0 = 2.00 rF = 1.5 VDClink = 2400 V A A kA V Fast Recovery Diode 5SDF 03D4501 mΩ V Doc. No. 5SYA 1106-02 July 98 Features •Patented free-floating silicon technology •Low switching losses •Optimized to use as snubber and clamp diode in GTO and IGCT converters


    Original     		03D4501 CH-5600 snubber IGCT PDF

    IGCT thyristor

    Abstract: IGCT IGCT thyristor ABB IGCT thyristor current max igct abb HFBR-1528 HFBR-2528 MTA-156 IGCT high voltage
    Text: VDRM ITGQM ITSM VT0 rT VDClink = = = = = = 4500 3800 28 1.7 0.457 2800 V A kA V Asymmetric Integrated GateCommutated Thyristor 5SHY 35L4511 mΩ Ω V Doc. No. 5SYA1234-00 Sep. 01 • Highest snubberless turn off rating • Optimized for medium frequency <1kHz and


    Original     		35L4511 5SYA1234-00 10Test CH-5600 IGCT thyristor IGCT IGCT thyristor ABB IGCT thyristor current max igct abb HFBR-1528 HFBR-2528 MTA-156 IGCT high voltage PDF

    Untitled

    Abstract: No abstract text available
    Text: VDRM ITGQM ITSM VT0 rT VDClink = = = = = = 4500 4000 32 1.40 0.325 2800 V A kA V Asymmetric Integrated GateCommutated Thyristor 5SHY 35L4510 mΩ Ω V Doc. No. 5SYA1232-00 Sep. 01 • Highest snubberless turn off rating • Optimized for medium frequency <1kHz and


    Original     		35L4510 5SYA1232-00 10Test CH-5600 PDF

    IGCT thyristor ABB

    Abstract: IGCT IGCT thyristor 5SHY 35L4510 IGCT thyristor current max 35L45 35L4510 HFBR-1528 HFBR-2528 MTA-156
    Text: VDRM ITGQM ITSM VT0 rT VDClink = = = = = = 4500 4000 32 1.4 0.325 2800 V A kA V Asymmetric Integrated GateCommutated Thyristor 5SHY 35L4510 mΩ Ω V Doc. No. 5SYA1232-00 Sep. 01 • Highest snubberless turn off rating • Optimized for medium frequency <1kHz and


    Original     		35L4510 5SYA1232-00 10Test CH-5600 IGCT thyristor ABB IGCT IGCT thyristor 5SHY 35L4510 IGCT thyristor current max 35L45 35L4510 HFBR-1528 HFBR-2528 MTA-156 PDF

    Untitled

    Abstract: No abstract text available
    Text: VDRM ITGQM ITSM V T0 rT VDClink = = = = = = 4500 4000 32x103 1.4 0.325 2800 V A A V mΩ V Asymmetric Integrated GateCommutated Thyristor 5SHY 35L4510 Doc. No. 5SYA1232-02 April 04 • High snubberless turn off rating • Optimized for medium frequency (<1kHz) and


    Original     		35L4510 5SYA1232-02 CH-5600 PDF

    Untitled

    Abstract: No abstract text available
    Text: VDRM ITGQM ITSM V T0 rT VDClink = = = = = = 4500 3800 28x103 1.7 0.457 2800 V A A V mΩ V Asymmetric Integrated GateCommutated Thyristor 5SHY 35L4511 Doc. No. 5SYA1234-02 April 04 • High snubberless turn off rating • Optimized for medium frequency (<1kHz) and


    Original     		35L4511 5SYA1234-02 CH-5600 PDF

    IGCT

    Abstract: IGCT thyristor ABB snubber IGCT IGCT 4.5kv IGCT thyristor IGCT thyristor ABB new ABB IGBT inverter PCIM 96 ABB thyristor modules symmetric IGCT
    Text: Application Specific IGCTs Eric Carroll, Bjoern Oedegard, Thomas Stiasny, Marco Rossinelli ICPE, October 2001, Seoul, Korea Copyright [2001] IEEE. Reprinted from the International Conference on Power Electronics. This material is posted here with permission of the IEEE. Such permission of the


    Original     		ICPE01 IGCT IGCT thyristor ABB snubber IGCT IGCT 4.5kv IGCT thyristor IGCT thyristor ABB new ABB IGBT inverter PCIM 96 ABB thyristor modules symmetric IGCT PDF

    IGCT thyristor ABB

    Abstract: IGCT IGCT thyristor igct abb IGCT thyristor current max 5SHY 35L4510 35L4510 high power igct abb gct thyristor IGCT high
    Text: VDRM ITGQM ITSM VT0 rT VDClink = = = = = = 4500 4000 32 1.40 0.325 2800 V A kA V Asymmetric Integrated GateCommutated Thyristor mΩ Ω V PRELIMINARY 5SHY 35L4510 Doc. No. 5SYA1232-00 Mai 01 • Highest snubberless turn off rating • Optimized for medium frequency <1kHz and


    Original     		35L4510 5SYA1232-00 CH-5600 IGCT thyristor ABB IGCT IGCT thyristor igct abb IGCT thyristor current max 5SHY 35L4510 35L4510 high power igct abb gct thyristor IGCT high PDF

    IGCT thyristor ABB

    Abstract: IGCT IGCT thyristor high power igct abb IGCT thyristor current max IGCT abb
    Text: VDRM ITGQM ITSM VT0 rT VDClink = = = = = = 4500 3800 28 1.70 0.457 2800 V A kA V Asymmetric Integrated GateCommutated Thyristor 5SHY 35L4511 mΩ Ω V Doc. No. 5SYA1234-00 Sep. 01 • Highest snubberless turn off rating • Optimized for medium frequency <1kHz and


    Original     		35L4511 5SYA1234-00 CH-5600 IGCT thyristor ABB IGCT IGCT thyristor high power igct abb IGCT thyristor current max IGCT abb PDF

    IGCT

    Abstract: IGCT thyristor ABB IGCT thyristor chopper igct igct abb IGCT high 5SHY 35L4510 IGCT high voltage high power igct abb HFBR lifetime
    Text: VDRM ITGQM ITSM VT0 rT VDClink = = = = = = 4500 4000 32 1.40 0.325 2800 V A kA V Asymmetric Integrated GateCommutated Thyristor 5SHY 35L4510 mΩ Ω V Doc. No. 5SYA1232-00 Sep. 01 • Highest snubberless turn off rating • Optimized for medium frequency <1kHz and


    Original     		35L4510 5SYA1232-00 CH-5600 IGCT IGCT thyristor ABB IGCT thyristor chopper igct igct abb IGCT high 5SHY 35L4510 IGCT high voltage high power igct abb HFBR lifetime PDF

    IGCT thyristor ABB

    Abstract: IGCT IGCT high high power igct abb abb thyristor control unit IGCT thyristor current max igct application
    Text: VDRM ITGQM ITSM V T0 rT VDC-link = = = = = = 4500 3800 28x103 1.7 0.457 2800 V A A V mΩ V Asymmetric Integrated GateCommutated Thyristor 5SHY 35L4511 Doc. No. 5SYA1234-02 June 07 • High snubberless turn-off rating • Optimized for medium frequency (<1 kHz) and


    Original     		35L4511 5SYA1234-02 CH-5600 IGCT thyristor ABB IGCT IGCT high high power igct abb abb thyristor control unit IGCT thyristor current max igct application PDF

    ABB 163410

    Abstract: 5SHY 35L4510 igct application
    Text: VDRM ITGQM ITSM V T0 rT VDC = = = = = = 4500 4000 32x103 1.4 0.325 2800 V A A V mΩ V Asymmetric Integrated GateCommutated Thyristor 5SHY 35L4510 Doc. No. 5SYA1232-03 May 08 • High snubberless turn-off rating • Optimized for medium frequency (<1 kHz) and


    Original     		35L4510 5SYA1232-03 CH-5600 ABB 163410 5SHY 35L4510 igct application PDF

    5SYA1232-02

    Abstract: 35L4510 A125 B125 C125 HFBR-1528 HFBR-2528 MTA-156 IGCT thyristor current max igct abb
    Text: VDRM ITGQM ITSM V T0 rT VDC-link = = = = = = 4500 4000 32x103 1.4 0.325 2800 V A A V mΩ V Asymmetric Integrated GateCommutated Thyristor 5SHY 35L4510 Doc. No. 5SYA1232-02 June 07 • High snubberless turn-off rating • Optimized for medium frequency (<1 kHz) and


    Original     		35L4510 5SYA1232-02 CH-5600 35L4510 A125 B125 C125 HFBR-1528 HFBR-2528 MTA-156 IGCT thyristor current max igct abb PDF

    schematic diagram igbt inverter welding machine

    Abstract: wind energy simulink matlab wind SOLAR simulink matlab UNITROL 1000 rc helicopter circuit diagram abb acs800 bridge circuit diagram igct abb ABB Thyristor YST PROJECT REPORT ON 220 kv substation thyristor aeg
    Text: ABB Review The corporate technical journal of the ABB Group www.abb.com/abbreview 3 / 2008 Pioneering spirits Power electronics revolution in high dc current IGBT: aA tiny chip with a huge impact page 19 measurement page 6 Team-mates: MultiMove functionality


    Original     		PDF

    igct 6500

    Abstract: IGCT thyristor ABB igct abb IGCT thyristor current max IGCT 5szk A125 B125 C125 HFBR-1528
    Text: VDRM ITGQM ITSM V T0 rT VDC-link = = = = = = 6500 4200 26x103 2.0 0.54 4000 V A A V mΩ V Asymmetric Integrated GateCommutated Thyristor 5SHY 42L6500 PRELIMINARY Doc. No. 5SYA1245-00 Aug 07 • High snubberless turn-off rating • Wide temperature range


    Original     		42L6500 5SYA1245-00 CH-5600 igct 6500 IGCT thyristor ABB igct abb IGCT thyristor current max IGCT 5szk A125 B125 C125 HFBR-1528 PDF