Insulated Gate Bipolar Transistors
Abstract: igbt
Text: SCSOA IGBT S-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode Short Circuit Current Rated
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Insulated Gate Bipolar Transistors
Abstract: igbt transistors IGBT ixys igbt
Text: HiPerFASTTM IGBT G-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode 2000 IXYS All rights reserved B2 - 1
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40n60 igbt
Abstract: 35N120u1 B1116 equivalent for 30n60 40n60 equivalent 30n60 equivalent 30n60 to-220 ixsn 35N120U1 igbt equivalent to 40n60 80n60
Text: SCSOA IGBT S-Series / D-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode Short Circuit Current Rated SCSOA IGBT S-Series Contents IGBT VCES max V High Speed Low VCE(sat) 600 IC VCE(sat) max TC = 25 °C TC = 25 °C A V TO-220 (IXSP) TO-263
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O-220
O-263
O-247
16N60
B1-10
24N60
30N60
40N60
40n60 igbt
35N120u1
B1116
equivalent for 30n60
40n60 equivalent
30n60 equivalent
30n60 to-220
ixsn 35N120U1
igbt equivalent to 40n60
80n60
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200n60
Abstract: 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120
Text: HiPerFASTTM IGBT G-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE(sat) 600 1000 TO-220 TO-263 TO-247 IC VCE(sat) (IXGP) (IXGA) (IXGH) max TC = 25 °C TC=25 °C A V 40 56 60 40
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PLUS247
20N30
28N30
30N30
40N30
31N60
38N60
41N60
60N60
O-264
200n60
20N30
n60c
50N60
7N60B
IC IGBT 25N120
IC600
80n60
60n60 igbt
25N120
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IGBT FF 300
Abstract: diode 1700v eupec igbt FF400R17KF6CB2 KF6C
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FF 400 R 17 KF6C B2 1700V IGBT Modul mit low loss IGBT der 2. Generation und softer EmCon Diode 1700V IGBT Module with low loss IGBT of 2nd generation and soft EmCon Diode Höchstzulässige Werte / Maximum rated values
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FF400R17KF6CB2
Abstract: No abstract text available
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FF 400 R 17 KF6C B2 1700V IGBT Modul mit low loss IGBT der 2. Generation und softer EmCon Diode 1700V IGBT Module with low loss IGBT of 2nd generation and soft EmCon Diode Höchstzulässige Werte / Maximum rated values
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FZ800R17KF6CB2
Abstract: KF6C
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 800 R 17 KF6C B2 1700V IGBT Modul mit low loss IGBT der 2. Generation und softer EmCon Diode 1700V IGBT Module with low loss IGBT of 2nd generation and soft EmCon Diode Höchstzulässige Werte / Maximum rated values
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FF400R17KF6CB2
Abstract: IGBT FF 300 igbt ff 75 r
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FF 400 R 17 KF6C B2 1700V IGBT Modul mit low loss IGBT der 2. Generation und softer EmCon Diode 1700V IGBT Module with low loss IGBT of 2nd generation and soft EmCon Diode Höchstzulässige Werte / Maximum rated values
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FF400R17KF6CB2
FF400R17KF6CB2
IGBT FF 300
igbt ff 75 r
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FF400R17KF6CB2
Abstract: No abstract text available
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FF 400 R 17 KF6C B2 1700V IGBT Modul mit low loss IGBT der 2. Generation und softer EmCon Diode 1700V IGBT Module with low loss IGBT of 2nd generation and soft EmCon Diode Höchstzulässige Werte / Maximum rated values
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eupec igbt
Abstract: IGBT FZ 1800 FZ800R17KF6CB2 IGBT module FZ 1200 IGBT FZ 800
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 800 R 17 KF6C B2 1700V IGBT Modul mit low loss IGBT der 2. Generation und softer EmCon Diode 1700V IGBT Module with low loss IGBT of 2nd generation and soft EmCon Diode Höchstzulässige Werte / Maximum rated values
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IGBT module FZ 1200
Abstract: KF6C FZ800R17KF6CB2
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 800 R 17 KF6C B2 1700V IGBT Modul mit low loss IGBT der 2. Generation und softer EmCon Diode 1700V IGBT Module with low loss IGBT of 2nd generation and soft EmCon Diode Höchstzulässige Werte / Maximum rated values
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FZ800R17KF6CB2
IGBT module FZ 1200
KF6C
FZ800R17KF6CB2
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diode 1700v
Abstract: FZ800R17KF6CB2
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 800 R 17 KF6C B2 1700V IGBT Modul mit low loss IGBT der 2. Generation und softer EmCon Diode 1700V IGBT Module with low loss IGBT of 2nd generation and soft EmCon Diode Höchstzulässige Werte / Maximum rated values
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IGBT parallel
Abstract: igbt IGBT manual IGBT TEST igbt-modules DATA SHEET OF IGBT what is fast IGBT transistor manual manual semiconductor igbtmodules
Text: N-Series IGBT-Modules / Application Manual CONTENT N-Series IGBT-Modules / Application Manual N-Series IGBT-Modules / Application Manual N-Series IGBT-Modules Application Manual page 1-1 N-Series IGBT-Modules Application Manual 1.1: Device Structure and Characterisitcs
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Application Note 91
Abstract: 81227 power BJT anti saturation diode IGBT gate driver ic optocoupler without base pin for mosfet driver IGBT EQUIVALENT BJT isolated Base Drive circuit mosfet igbt gate driver ic IGBT parallel DRIVE OSCILLATION optocoupler pnp
Text: VISHAY SEMICONDUCTORS www.vishay.com Optocouplers and Solid-State Relays Application Note 91 IGBT/MOSFET Gate Drive Optocoupler INTRODUCTION TO IGBT The Insulated Gate Bipolar transistor IGBT is a cross between a MOSFET (metal oxide semiconductor field effect
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24-Oct-11
Application Note 91
81227
power BJT anti saturation diode
IGBT gate driver ic
optocoupler without base pin for mosfet driver
IGBT EQUIVALENT
BJT isolated Base Drive circuit
mosfet igbt gate driver ic
IGBT parallel DRIVE OSCILLATION
optocoupler pnp
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Untitled
Abstract: No abstract text available
Text: PD - 95239 IRG4PH40UD2-EP UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C UltraFast IGBT optimized for high operating frequencies up to 200kHz in resonant mode IGBT co-packaged with HEXFREDTM ultrafast
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IRG4PH40UD2-EP
200kHz
O-247AD
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SCHEMATIC 10kw POWER SUPPLY WITH IGBTS
Abstract: 100A/IGBT DRIVER SCHEMATIC schematic diagram UPS 10kw SCHEMATIC 100kw POWER SUPPLY WITH IGBTS schematic diagram UPS inverter 1kv TD350 FP50R12KE3 schematic diagram 24v UPS AN1944 schematic diagram UPS inverter
Text: AN1944 Application note Developing IGBT applications using an TD350 advanced IGBT driver Introduction The TD350 is an advanced Insulated Gate Bipolar Transistor IGBT driver with integrated control and protection functions. The TD350 is especially adapted for driving 1200V IGBTs
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AN1944
TD350
SCHEMATIC 10kw POWER SUPPLY WITH IGBTS
100A/IGBT DRIVER SCHEMATIC
schematic diagram UPS 10kw
SCHEMATIC 100kw POWER SUPPLY WITH IGBTS
schematic diagram UPS inverter 1kv
FP50R12KE3
schematic diagram 24v UPS
AN1944
schematic diagram UPS inverter
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ST T4 3660
Abstract: 035H IRFPE30 IRG4PH40UD2-E induction cooking ge 6220 induction cooking circuits
Text: PD - 96781 IRG4PH40UD2-E UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C UltraFast IGBT optimized for high operating frequencies up to 200kHz in resonant mode IGBT co-packaged with HEXFREDTM ultrafast
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IRG4PH40UD2-E
200kHz
O-247AD
ST T4 3660
035H
IRFPE30
IRG4PH40UD2-E
induction cooking
ge 6220
induction cooking circuits
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IRG4PH40UD2-EP
Abstract: 035H IRGP30B120KD-E
Text: PD - 95239 IRG4PH40UD2-EP UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C UltraFast IGBT optimized for high operating frequencies up to 200kHz in resonant mode IGBT co-packaged with HEXFREDTM ultrafast
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IRG4PH40UD2-EP
200kHz
O-247AD
IRG4PH40UD2-EP
035H
IRGP30B120KD-E
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Insulated Gate Bipolar Transistors
Abstract: No abstract text available
Text: n ix Y S HIPerFASÎ IGBT 0-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode 1 X Ki:
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75-06A7T
Abstract: Bt 35 transistor transistor 81 110 w 85 100-12E8 MWI 15-12A7 25-12A7T 30-06A7T transistor T 044
Text: IGBT Modules - Sixpack configuration NPT IGBT Modules N P T IG B T = non-punch through insulated gate bipolar transistor; square R BSO A, short circuit rated 6-pack IG BT - Modules Fig. 81 ► New Type •W K/W Us A u T ,= 25°C IGBT mJ Tj = 125°C IGBT IGBT
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30-06A7
30-06A7T
50-06A7
50-06A7T
75-06A7
75-06A7T
15-12A7
25-12A7
50-12E7
100-06A8
Bt 35 transistor
transistor 81 110 w 85
100-12E8
MWI 15-12A7
25-12A7T
transistor T 044
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diode 12A3
Abstract: 7512a3
Text: IGBT Modules NPT IGBT Modules NPT IGBT = non-punch through insulated gate bipolar transistor square RBSOA, short circuit rated phase leg boost chopper buck chopper I single switch v*C 6Ç rt typ v œs V ► New A A Tc= 25°C IGBT Tc= 80°C IGBT 90 135 160
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page91-100
75-12A3
100-12A3
150-12A4
200-12A4
300-12A4
420-03S4
1000-03G4
40-06D
50-12E
diode 12A3
7512a3
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advanced Information SMARTDISCRETES Internally Clamped, N-Channel IGBT MGP20N35CL 20 AMPERES VOLTAGE CLAMPED N-CHANNEL IGBT VCE on = 1-8 VOLTS 350 VOLTS (CLAMPED) This Logic Level Insulated Gate Bipolar Transistor (IGBT)
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MGP20N35CL
-220A
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Insulated Gate Bipolar Transistors
Abstract: No abstract text available
Text: OIXYS SCSOA IGBTS-Series / D-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode Short Circuit Current Rated ♦
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leistungs dioden siemens
Abstract: siemens dioden siemens diodes leistungstransistoren
Text: SIEMENS Leistungs halbleiter Power Semiconductors Leistungstransistoren Diskrete IGBT Dioden Power Transistors Discrete IGBT Diodes Datenbuch 11.96 Data Book 11.96
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