IGBT TRANSISTOR Search Results
IGBT TRANSISTOR Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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GT30J110SRA |
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IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) |
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GT30N135SRA |
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IGBT, 1350 V, 30 A, Built-in Diodes, TO-247 |
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GT30J65MRB |
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IGBT, 650 V, 60 A, Built-in Diodes, TO-3P(N) |
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TLP5702H |
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Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L |
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TLP5705H |
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Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L |
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IGBT TRANSISTOR Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Insulated Gate Bipolar Transistors
Abstract: igbt
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Insulated Gate Bipolar Transistors
Abstract: igbt transistors IGBT ixys igbt
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Insulated Gate Bipolar TransistorsContextual Info: n ix Y S HIPerFASÎ IGBT 0-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode 1 X Ki: |
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40n60 igbt
Abstract: 35N120u1 B1116 equivalent for 30n60 40n60 equivalent 30n60 equivalent 30n60 to-220 ixsn 35N120U1 igbt equivalent to 40n60 80n60
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O-220 O-263 O-247 16N60 B1-10 24N60 30N60 40N60 40n60 igbt 35N120u1 B1116 equivalent for 30n60 40n60 equivalent 30n60 equivalent 30n60 to-220 ixsn 35N120U1 igbt equivalent to 40n60 80n60 | |
75-06A7T
Abstract: Bt 35 transistor transistor 81 110 w 85 100-12E8 MWI 15-12A7 25-12A7T 30-06A7T transistor T 044
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30-06A7 30-06A7T 50-06A7 50-06A7T 75-06A7 75-06A7T 15-12A7 25-12A7 50-12E7 100-06A8 Bt 35 transistor transistor 81 110 w 85 100-12E8 MWI 15-12A7 25-12A7T transistor T 044 | |
diode 12A3
Abstract: 7512a3
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page91-100 75-12A3 100-12A3 150-12A4 200-12A4 300-12A4 420-03S4 1000-03G4 40-06D 50-12E diode 12A3 7512a3 | |
200n60
Abstract: 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120
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PLUS247 20N30 28N30 30N30 40N30 31N60 38N60 41N60 60N60 O-264 200n60 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120 | |
IGBT FF 300
Abstract: diode 1700v eupec igbt FF400R17KF6CB2 KF6C
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FF400R17KF6CB2Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules FF 400 R 17 KF6C B2 1700V IGBT Modul mit low loss IGBT der 2. Generation und softer EmCon Diode 1700V IGBT Module with low loss IGBT of 2nd generation and soft EmCon Diode Höchstzulässige Werte / Maximum rated values |
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FZ800R17KF6CB2
Abstract: KF6C
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FF400R17KF6CB2
Abstract: IGBT FF 300 igbt ff 75 r
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FF400R17KF6CB2 FF400R17KF6CB2 IGBT FF 300 igbt ff 75 r | |
FF400R17KF6CB2Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules FF 400 R 17 KF6C B2 1700V IGBT Modul mit low loss IGBT der 2. Generation und softer EmCon Diode 1700V IGBT Module with low loss IGBT of 2nd generation and soft EmCon Diode Höchstzulässige Werte / Maximum rated values |
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eupec igbt
Abstract: IGBT FZ 1800 FZ800R17KF6CB2 IGBT module FZ 1200 IGBT FZ 800
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IGBT module FZ 1200
Abstract: KF6C FZ800R17KF6CB2
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FZ800R17KF6CB2 IGBT module FZ 1200 KF6C FZ800R17KF6CB2 | |
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IGBT parallel
Abstract: igbt IGBT manual IGBT TEST igbt-modules DATA SHEET OF IGBT what is fast IGBT transistor manual manual semiconductor igbtmodules
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Application Note 91
Abstract: 81227 power BJT anti saturation diode IGBT gate driver ic optocoupler without base pin for mosfet driver IGBT EQUIVALENT BJT isolated Base Drive circuit mosfet igbt gate driver ic IGBT parallel DRIVE OSCILLATION optocoupler pnp
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24-Oct-11 Application Note 91 81227 power BJT anti saturation diode IGBT gate driver ic optocoupler without base pin for mosfet driver IGBT EQUIVALENT BJT isolated Base Drive circuit mosfet igbt gate driver ic IGBT parallel DRIVE OSCILLATION optocoupler pnp | |
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advanced Information SMARTDISCRETES Internally Clamped, N-Channel IGBT MGP20N35CL 20 AMPERES VOLTAGE CLAMPED N-CHANNEL IGBT VCE on = 1-8 VOLTS 350 VOLTS (CLAMPED) This Logic Level Insulated Gate Bipolar Transistor (IGBT) |
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MGP20N35CL -220A | |
Insulated Gate Bipolar TransistorsContextual Info: OIXYS SCSOA IGBTS-Series / D-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode Short Circuit Current Rated ♦ |
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leistungs dioden siemens
Abstract: siemens dioden siemens diodes leistungstransistoren
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SGH80N60UFDContextual Info: IGBT SGH80N60UFD Ultra-Fast IGBT General Description Features Fairchild's Insulated Gate Bipolar Transistor IGBT UFD series provides low conduction and switching losses. UFD seriesis designed for the applications such as motor control and general inverters where High Speed Switching |
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SGH80N60UFD SGH80N60UFD | |
Contextual Info: PD - 95239 IRG4PH40UD2-EP UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C UltraFast IGBT optimized for high operating frequencies up to 200kHz in resonant mode IGBT co-packaged with HEXFREDTM ultrafast |
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IRG4PH40UD2-EP 200kHz O-247AD | |
SCHEMATIC 10kw POWER SUPPLY WITH IGBTS
Abstract: 100A/IGBT DRIVER SCHEMATIC schematic diagram UPS 10kw SCHEMATIC 100kw POWER SUPPLY WITH IGBTS schematic diagram UPS inverter 1kv TD350 FP50R12KE3 schematic diagram 24v UPS AN1944 schematic diagram UPS inverter
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AN1944 TD350 SCHEMATIC 10kw POWER SUPPLY WITH IGBTS 100A/IGBT DRIVER SCHEMATIC schematic diagram UPS 10kw SCHEMATIC 100kw POWER SUPPLY WITH IGBTS schematic diagram UPS inverter 1kv FP50R12KE3 schematic diagram 24v UPS AN1944 schematic diagram UPS inverter | |
ST T4 3660
Abstract: 035H IRFPE30 IRG4PH40UD2-E induction cooking ge 6220 induction cooking circuits
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IRG4PH40UD2-E 200kHz O-247AD ST T4 3660 035H IRFPE30 IRG4PH40UD2-E induction cooking ge 6220 induction cooking circuits | |
IRG4PH40UD2-EP
Abstract: 035H IRGP30B120KD-E
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IRG4PH40UD2-EP 200kHz O-247AD IRG4PH40UD2-EP 035H IRGP30B120KD-E |