IGBT K15N60 Search Results

IGBT K15N60 Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
GT30J110SRA		Toshiba Electronic Devices & Storage Corporation	IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N)
TLP5702H		Toshiba Electronic Devices & Storage Corporation	Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L
TLP5705H		Toshiba Electronic Devices & Storage Corporation	Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L
TK190U65Z		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL
TK7R0E08QM		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB

IGBT K15N60 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
k15n60 ic equivalent Abstract: No abstract text available Text: SKB15N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls	Original	PDF	SKB15N60 SKB15N60 k15n60 ic equivalent
SKP15N60 Abstract: SKP15N60 or equivalent Text: SKP15N60 SKW15N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode C • 75% lower Eoff compared to previous generation combined with low conduction losses  Short circuit withstand time – 10 s  Designed for:	Original	PDF	SKP15N60 SKW15N60 PG-TO-220-3-1 O-220AB) SKP15N60 SKP15N60 or equivalent
K15N60 Abstract: No abstract text available Text: SKB15N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls	Original	PDF	SKB15N60 SKB15N60 K15N60
K15N60 Abstract: k15n60 ic equivalent 80w 120v 8a 120v 8a 80w Text: SKB15N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls	Original	PDF	SKB15N60 SKB15N60 K15N60 k15n60 ic equivalent 80w 120v 8a 120v 8a 80w
K15N60 Abstract: k15n60 equivalent k15n60 ic equivalent SKW15N60 Text: SKP15N60 SKW15N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls	Original	PDF	SKP15N60 SKW15N60 PG-TO-220-3-1 O-220AB) SKW15N60 K15N60 k15n60 equivalent k15n60 ic equivalent
K15N60 Abstract: SKB15N60HS PG-TO263-3-2 T150H Text: SKB15N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability	Original	PDF	SKB15N60HS PG-TO263-3-2 K15N60HS K15N60 SKB15N60HS PG-TO263-3-2 T150H
K15N60 Abstract: SKP15N60 K15N60 Text: SKP15N60 SKW15N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls	Original	PDF	SKP15N60 SKW15N60 PG-TO-220-3-1 O-220AB) SKW15N60 K15N60 SKP15N60 K15N60
K15N60 Abstract: K15N60HS Text: SKB15N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability	Original	PDF	SKB15N60HS K15N60HS P-TO-220-3-45 SKB15N60HS K15N60
k15N60 Abstract: k15n60 ic equivalent SKP15N60 SKP15N60 or equivalent K15N PG-TO-220-3-1 PG-TO-247-3 PG-TO-247-3-21 SKW15N60 SKW15N60 K15N60 Text: SKP15N60 SKW15N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls	Original	PDF	SKP15N60 SKW15N60 PG-TO-220-3-1 O-220AB) PG-TO-247-3 k15N60 k15n60 ic equivalent SKP15N60 SKP15N60 or equivalent K15N PG-TO-220-3-1 PG-TO-247-3 PG-TO-247-3-21 SKW15N60 SKW15N60 K15N60
K15N60 Abstract: k15n60 ic equivalent k15n60 equivalent SKW15N60 K15N60 SKP15N60 K15N60 Text: SKP15N60 SKW15N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls	Original	PDF	SKP15N60 SKW15N60 PG-TO-220-3-1 O-220AB) SKW15N60 K15N60 k15n60 ic equivalent k15n60 equivalent SKW15N60 K15N60 SKP15N60 K15N60
K15N60 Abstract: K15N60HS Text: SKB15N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability	Original	PDF	SKB15N60HS K15N60HS P-TO-220-3-45 SKB15N60HS K15N60
K15N60 Abstract: k15n60 equivalent k15n60 ic equivalent Q67040-S4251 K15N60 600v 15a igbt k15n60 Text: SKP15N60 SKW15N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls	Original	PDF	SKP15N60 SKW15N60 PG-TO-220-3-1 O-220AB) SKW15N60 K15N60 k15n60 equivalent k15n60 ic equivalent Q67040-S4251 K15N60 600v 15a igbt k15n60
K15N60 Abstract: No abstract text available Text: SKB15N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability	Original	PDF	SKB15N60HS K15N60HS P-TO-263-3-2 Q67040S4543 P-TO-263-3-2 O-263AB) SKB15N60HS K15N60
Untitled Abstract: No abstract text available Text: SKB15N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode C • 75% lower Eoff compared to previous generation combined with low conduction losses  Short circuit withstand time – 10 s  Designed for frequency inverters for washing machines,	Original	PDF	SKB15N60