IGBT ELECTROSTATIC HANDLING PRECAUTIONS Search Results

IGBT Electrostatic Handling Precautions

Abstract: AN4502 Dynex Semiconductor BSI 208
Contextual Info: AN4502 Application Note AN4502 IGBT Electrostatic Handling Precautions Application Note Replaces September 2000 version, AN4502-3.0 AN4502-3.1 July 2002 The IGBT has been developed to combine the properties of both MOSFET and Bipolar devices. This overcomes some of the

igbt v1

Contextual Info: DIM600DCM17-A000 DIM600DCM17-A000 IGBT Chopper Module Preliminary Information DS5491-1.1 September 2001 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates KEY PARAMETERS

DIODE i2t

Abstract: DS5490-1 DIM400DCM17-A000 DS5490
Contextual Info: DIM400DCM17-A000 DIM400DCM17-A000 IGBT Chopper Module Replaces September 2001, version DS5490-1.1 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5490-2.0 March 2002

DIM600DCM17-A000

Abstract: 256068
Contextual Info: DIM600DCM17-A000 DIM600DCM17-A000 IGBT Chopper Module Replaces September 2001, version DS5491-1.1 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5491-2.0 March 2002

DIODE i2t

Contextual Info: DIM400DCM17-A000 DIM400DCM17-A000 IGBT Chopper Module Preliminary Information DS5490-1.1 September 2001 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates KEY PARAMETERS

DIODE i2t

Abstract: DIM400DCM17-A000
Contextual Info: DIM400DCM17-A000 DIM400DCM17-A000 IGBT Chopper Module Replaces issue March 2002, version DS5490-2.0 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5490-3.1 July 2002

DIM400DCM17-A000

Contextual Info: DIM400DCM17-A000 DIM400DCM17-A000 IGBT Chopper Module Replaces issue March 2002, version DS5490-2.0 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5490-3.1 July 2002

DIM400DCM17-A000

Abstract: DIM400DCS17-A000
Contextual Info: DIM400DCM17-A000 DIM400DCS17-A000 IGBT Chopper Module DS5880-1.0 February 2006 LN24476 FEATURES • 10µs Short Circuit Withstand ■ Lead Free Construction ■ Non Punch Through Silicon ■ Isolated Copper Base KEY PARAMETERS VCES (typ) VCE(sat) * (max)

DIODE i2t

Abstract: arm ic bi-directional switches IGBT dc to dc chopper using igbt DIM400DCM17-A000
Contextual Info: DIM400DCM17-A000 DIM400DCM17-A000 IGBT Chopper Module Replaces issue March 2002, version DS5490-2.0 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5490-3.1 July 2002

DIM600DCM17-A000

Abstract: lm411
Contextual Info: DIM600DCM17-A000 DIM600DCM17-A000 IGBT Chopper Module Replaces issue March 2002, version DS5491-2.0 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5491-3.1 Octtober 2002

Contextual Info: DIM600DCM17-A000 IGBT Chopper Module DS5607- 4.1 March 2007 FEATURES 10µs Short Circuit Withstand Non Punch Through Silicon Isolated AlSiC Baseplate with AIN substrate High Thermal Cycling Capability KEY PARAMETERS VCES VCE sat * (typ) IC (max) IC(PK) (max)

DIODE i2t

Abstract: heat sink design guide, IGBT DIM600DCM17-A000
Contextual Info: DIM600DCM17-A000 DIM600DCM17-A000 IGBT Chopper Module DS5491-4.0 April 2003 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates KEY PARAMETERS VCES typ VCE(sat)

DIM600DCM17-A000

Abstract: DIM600DCM17
Contextual Info: DIM600DCM17-A000 IGBT Chopper Module DS5491- 4.2 May 2007 FEATURES • 10µs Short Circuit Withstand • Non Punch Through Silicon • Isolated AlSiC Baseplate with AIN substrate • High Thermal Cycling Capability • Lead Free construction KEY PARAMETERS

DIM600DCS17-A000

Contextual Info: DIM600DCS17-A000 IGBT Chopper Module DS5607- 2.1 March 2006 FEATURES • 10µs Short Circuit Withstand • Non Punch Through Silicon • Isolated Copper Baseplate • Lead Free construction KEY PARAMETERS VCES VCE sat * (typ) IC (max) IC(PK) (max) (LN24484)

Contextual Info: Preliminary Information DIM1600ECM17-A000 IGBT Chopper Module DS6069-1 September 2011 LN28672 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  Soft Punch Through Silicon VCES VCE(sat) * (typ) IC (max) IC(PK)

Contextual Info: DIM800ECM33-F000 IGBT Chopper Module Replaces DS5815-1.2 DS5815-3 September 2012 LN29759 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  Soft Punch Through Silicon VCES VCE(sat) * (typ) IC (max) IC(PK) (max)

AN4502

Contextual Info: TGD-1X AN4502 Electrostatic Handling Precautions Application Note Supersedes July 1996 version, AN4502 - 1.1 AN4502 - 1.2 March 1998 individual should take the precaution of discharging themselves to earth via a high value resistor typically 2 to 4MΩ or preferably be earthed via a wrist strap. The conductive

AN4502

Abstract: AN4503 AN4505 AN4506 GP2400ESM18
Contextual Info: GP2400ESM18 GP2400ESM18 Hi-Reliability Single Switch IGBT Module DS5406-1.1 January 2001 FEATURES • High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates ■ 2400A Per Module KEY PARAMETERS VCES typ VCE(sat)

DIM800DCS12-A000

Contextual Info: DIM800DCS12-A000 IGBT Chopper Module DS5839- 1.1 June 2005 FEATURES • 10µs Short Circuit Withstand • Non Punch Through Silicon • Isolated Copper Baseplate • Lead Free construction KEY PARAMETERS VCES VCE sat * (typ) IC (max) IC(PK) (max) (LN24042)

bi-directional switches IGBT

Abstract: DIM800DCS17-A000
Contextual Info: DIM800DCS17-A000 IGBT Chopper Module DS5843- 1.1 MAY 2006 FEATURES • 10µs Short Circuit Withstand • Non Punch Through Silicon • Isolated Copper Baseplate • Lead Free construction KEY PARAMETERS VCES VCE sat * (typ) IC (max) IC(PK) (max) (LN24611)

DIM800DCM17-A000

Contextual Info: DIM800DCM17-A000 IGBT Chopper Module DS5444- 4.2 May 2006 LN24610 FEATURES • 10µs Short Circuit Withstand • High Thermal Cycling Capability • Non Punch Through Silicon • Isolated MMC Base with AIN Substrate KEY PARAMETERS VCES VCE (sat)* (typ) IC

DIM600DDS17-A000

Contextual Info: DIM600DDS17-A000 Dual Switch IGBT Module DS5842-1.2 MAY 2006 FEATURES • 10µs Short Circuit Withstand • Non Punch Through Silicon • Isolated Copper Baseplate • Lead Free construction KEY PARAMETERS VCES VCE sat * (typ) IC (max) IC(PK) (max) (LN24613)

Contextual Info: DIM400DCM17-A000 IGBT Chopper Module Replaces DS5490-4 FEATURES • 10µs Short Circuit Withstand  High Thermal Cycling Capability  Non Punch Through Silicon  Isolated AlSiC Base with AlN Substrates  Lead Free Construction APPLICATIONS  High Reliability Inverters

DIM400DCM17-A000

Abstract: DIM400DCM17-A
Contextual Info: 16 3 DS5490-5 March 2011 LN28169 14 ±0.2 ±0.2 Replaces DS5490-4 IGBT Chopper Module 11.5 DIM400DCM17-A000 ±0.2 FEATURES • 10µs Short Circuit Withstand  High Thermal Cycling Capability  Non Punch Through Silicon  Isolated AlSiC Base with AlN Substrates