40n60 igbt
Abstract: 35N120u1 B1116 equivalent for 30n60 40n60 equivalent 30n60 equivalent 30n60 to-220 ixsn 35N120U1 igbt equivalent to 40n60 80n60
Text: SCSOA IGBT S-Series / D-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode Short Circuit Current Rated SCSOA IGBT S-Series Contents IGBT VCES max V High Speed Low VCE(sat) 600 IC VCE(sat) max TC = 25 °C TC = 25 °C A V TO-220 (IXSP) TO-263
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Original
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O-220
O-263
O-247
16N60
B1-10
24N60
30N60
40N60
40n60 igbt
35N120u1
B1116
equivalent for 30n60
40n60 equivalent
30n60 equivalent
30n60 to-220
ixsn 35N120U1
igbt equivalent to 40n60
80n60
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PDF
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200n60
Abstract: 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120
Text: HiPerFASTTM IGBT G-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE(sat) 600 1000 TO-220 TO-263 TO-247 IC VCE(sat) (IXGP) (IXGA) (IXGH) max TC = 25 °C TC=25 °C A V 40 56 60 40
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Original
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PLUS247
20N30
28N30
30N30
40N30
31N60
38N60
41N60
60N60
O-264
200n60
20N30
n60c
50N60
7N60B
IC IGBT 25N120
IC600
80n60
60n60 igbt
25N120
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PDF
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Untitled
Abstract: No abstract text available
Text: IXA40RG1200DHGLB tentative XPT IGBT = ISOPLUS Surface Mount Power Device Boost Topology XPT IGBT Part number Backside: isolated 7 BD VDD 9 1 FWD 3 2 8 Features / Advantages: XPT IGBT - low saturation voltage - positive temperature coefficient for easy paralleling
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Original
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IXA40RG1200DHGLB
60747and
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PDF
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Untitled
Abstract: No abstract text available
Text: IXA20RG1200DHGLB tentative XPT IGBT = ISOPLUS Surface Mount Power Device Boost Topology XPT IGBT Part number Backside: isolated 7 BD VDD 9 1 FWD 3 2 8 Features / Advantages: XPT IGBT - low saturation voltage - positive temperature coefficient for easy paralleling
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Original
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IXA20RG1200DHGLB
60747and
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PDF
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Untitled
Abstract: No abstract text available
Text: For partial switching PFC Integrated IGBT and Diode Bridge Rectifier SLA5222 Features Package SLA5222 incorporates IGBT and diodes for bridge rectifier of partial switching PFC, and achieves board space reduction. Low Saturation Voltage IGBT Low VF Diode Bridge Rectifier
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Original
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SLA5222
SLA5222
SLA5222-DS
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PDF
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IRFPS37N50A
Abstract: IRGPS40B120UP 312V marking code igbt 40a 600v
Text: PD- 95899A IRGPS40B120UP INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT VCES = 1200V C Features • Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE on Temperature Coefficient. • Super-247 Package.
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Original
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5899A
IRGPS40B120UP
Super-247
Super-247TM
IRFPS37N50A
IRFPS37N50A
IRGPS40B120UP
312V marking code
igbt 40a 600v
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PDF
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Untitled
Abstract: No abstract text available
Text: PD- 95899A IRGPS40B120UP INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT VCES = 1200V C Features • Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE on Temperature Coefficient. • Super-247 Package.
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Original
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5899A
IRGPS40B120UP
Super-247
Super-247â
IRFPS37N50A
IRFPS37N50A
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PDF
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Super-247 Package
Abstract: IRG4PSC71UD
Text: International IÖR Rectifier PD - 91682A IRG4PSC71UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency minimum switching and conduction losses than
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OCR Scan
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Super-247
O-247
1682A
IRG4PSC71UD
--600V
Liguria49,
Super-247 Package
IRG4PSC71UD
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PDF
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mosfet 1200V 40A
Abstract: *40b120u ir igbt 1200V 40A 800V 40A mosfet igbt 40A 600V IRFPS37N50A IRGPS40B120U transistor 600v 500a 312V marking code l200h
Text: PD- 94295B IRGPS40B120U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT C VCES = 1200V Features • Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE on Temperature Coefficient. • Super-247 Package.
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Original
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94295B
IRGPS40B120U
Super-247
Super-247TM
Super-247TM
IRFPS37N50A
IRFPS37N50A
mosfet 1200V 40A
*40b120u
ir igbt 1200V 40A
800V 40A mosfet
igbt 40A 600V
IRGPS40B120U
transistor 600v 500a
312V marking code
l200h
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 95892 IRG4PSH71UPbF UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast switching speed optimized for operating frequencies 8 to 40kHz in hard switching, 200kHz in resonant mode soft switching • Generation 4 IGBT design provides tighter
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Original
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IRG4PSH71UPbF
40kHz
200kHz
Super-247
O-247
pow74AA)
IRFPS37N50A
IRFPS37N50A
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PDF
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Untitled
Abstract: No abstract text available
Text: PD- 95899 IRGPS40B120UP INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT C VCES = 1200V Features • Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE on Temperature Coefficient. • Super-247 Package.
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Original
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IRGPS40B120UP
Super-247
Super-247â
IRFPS37N50A
IRFPS37N50A
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PDF
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Untitled
Abstract: No abstract text available
Text: PD- 94295C IRGPS40B120U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT C VCES = 1200V Features • Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE on Temperature Coefficient. • Super-247 Package.
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Original
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94295C
IRGPS40B120U
Super-247
Super-247â
IRFPS37N50A
IRFPS37N50A
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PDF
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UC3726
Abstract: UC3727 igbt testing procedure waveform generator specifications
Text: DN-60 Design Note UC3726 / UC3727 IGBT Isolated Driver Pair Evaluation Kit Testing Procedure by : Bill Andreycak The UC3726/UC3727 IGBT isolated driver pair evaluation kit is available for design engineers to verify the performance and functionality of this
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Original
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DN-60
UC3726
UC3727
UC3726/UC3727
U-143A
DG-200A
DN-57
igbt testing procedure
waveform generator specifications
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PDF
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IRG4PSC71U
Abstract: T5 transistor TO-247
Text: PD - 91681A IRG4PSC71U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast switching speed optimized for operating frequencies 8 to 40kHz in hard switching, 200kHz in resonant mode soft switching • Generation 4 IGBT design provides tighter
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Original
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1681A
IRG4PSC71U
40kHz
200kHz
Super-247
O-247
IRG4PSC71U
T5 transistor TO-247
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PDF
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|
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IRG4PSC71U
Abstract: No abstract text available
Text: PD - 91681 IRG4PSC71U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast switching speed optimized for operating frequencies 8 to 40kHz in hard switching, 200kHz in resonant mode soft switching • Generation 4 IGBT design provides tighter
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Original
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IRG4PSC71U
40kHz
200kHz
Super-247
O-247
Super-247
IRG4PSC71U
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PDF
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Untitled
Abstract: No abstract text available
Text: IXA55I1200HJ preliminary XPT IGBT VCES = 1200 V I C25 = 84 A VCE sat = 1.8 V Single IGBT Part number IXA55I1200HJ Backside: isolated (C) 2 (G) 1 (E) 3 Features / Advantages: Applications: Package: ISOPLUS247 ● Easy paralleling due to the positive temperature
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Original
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IXA55I1200HJ
ISOPLUS247
60747and
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PDF
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IGBT 1200V 60A
Abstract: No abstract text available
Text: PD- 95913 IRGPS60B120KDP INSULATED GATE BIPOLAR TRANSISTOR WITH Motor Control Co-Pack IGBT ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA.
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Original
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IRGPS60B120KDP
Super-247
Super-247â
R37N50A
IGBT 1200V 60A
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PDF
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mosfet 1200V 40A
Abstract: 600v 20a IGBT driver IRGPS40B120U 800V 40A mosfet IGBT 600V 40A
Text: PD- 94295 IRGPS40B120U INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast IGBT C VCES = 1200V Features • • • • • Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE on Temperature Coefficient.
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Original
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IRGPS40B120U
Super-247
Super-247TM
5M-1994.
O-274AA
mosfet 1200V 40A
600v 20a IGBT driver
IRGPS40B120U
800V 40A mosfet
IGBT 600V 40A
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PDF
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IRGPS60B120KDP
Abstract: transistor D 5032 650 DIODE RG-47 diode IRFPS37N50A IGBT 900v 60a 1200v fet
Text: PD- 95913 IRGPS60B120KDP INSULATED GATE BIPOLAR TRANSISTOR WITH Motor Control Co-Pack IGBT ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA.
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Original
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IRGPS60B120KDP
Super-247
Super-247TM
IRFPS37N50A
IRGPS60B120KDP
transistor D 5032
650 DIODE
RG-47 diode
IRFPS37N50A
IGBT 900v 60a
1200v fet
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PDF
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420 Diode
Abstract: 719C IRGPS40B120UDP IRFPS37N50A 1000V 20A transistor UJ3000 igbt 1200V 60A
Text: PD- 95967 IRGPS40B120UDP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast Co-Pack IGBT C Features • Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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Original
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IRGPS40B120UDP
Super-247
Super-247TM
PS37N50A
IRFPS37N50A
420 Diode
719C
IRGPS40B120UDP
IRFPS37N50A
1000V 20A transistor
UJ3000
igbt 1200V 60A
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PDF
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transistor D 5032
Abstract: 650 DIODE IRGPS60B120KD
Text: PD- 94239 IRGPS60B120KD INSULATED GATE BIPOLAR TRANSISTOR WITH Motor Control Co-Pack IGBT ULTRAFAST SOFT RECOVERY DIODE C VCES = 1200V Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA.
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Original
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IRGPS60B120KD
Super-247
Super-247TM
O-274AA
transistor D 5032
650 DIODE
IRGPS60B120KD
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PDF
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ic MARKING QG
Abstract: IGBT 1200V 60A IGBT 60A Super-247 Package IRFPS37N50A IRGPS60B120KD transistor D 5032 247t A1508 650 DIODE
Text: PD- 94239A IRGPS60B120KD INSULATED GATE BIPOLAR TRANSISTOR WITH Motor Control Co-Pack IGBT ULTRAFAST SOFT RECOVERY DIODE C VCES = 1200V Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA.
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Original
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4239A
IRGPS60B120KD
Super-247
Super-247TM
IRFPS37N50A
ic MARKING QG
IGBT 1200V 60A
IGBT 60A
Super-247 Package
IRFPS37N50A
IRGPS60B120KD
transistor D 5032
247t
A1508
650 DIODE
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PDF
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Untitled
Abstract: No abstract text available
Text: IXA20I1200PB preliminary XPT IGBT VCES = 1200 V I C25 = 38 A VCE sat = 1.8 V Single IGBT Part number IXA20I1200PB Backside: collector (C) 2 (G) 1 (E) 3 Features / Advantages: Applications: Package: TO-220 ● Easy paralleling due to the positive temperature
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Original
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IXA20I1200PB
O-220
60747and
20131024a
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PDF
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Untitled
Abstract: No abstract text available
Text: IXA30RG1200DHGLB tentative XPT IGBT VCES = 1200 V I C25 = 43 A VCE sat = 1.8 V ISOPLUS Surface Mount Power Device Boost Topology XPT IGBT Part number IXA30RG1200DHGLB Backside: isolated 7 BD 9 VDD 1 FWD 3 2 8 Features / Advantages: Applications: Package: SMPD
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Original
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IXA30RG1200DHGLB
60747and
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PDF
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