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    IGBT BUK854 Search Results

    IGBT BUK854 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    GT30N135SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1350 V, 30 A, Built-in Diodes, TO-247 Visit Toshiba Electronic Devices & Storage Corporation
    GT30J65MRB Toshiba Electronic Devices & Storage Corporation IGBT, 650 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation

    IGBT BUK854 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    BUK854-800 applications

    Abstract: BUK854-800 datasheet BUK854-800 BUK854-800A transistor igbt
    Text: Philips Semiconductors Product Specification Insulated Gate Bipolar Transistor IGBT GENERAL DESCRIPTION QUICK REFERENCE DATA Fast-switching N-channel insulated gate bipolar power transistor in a plastic envelope. The device is intended for use in motor control, DC/DC and AC/DC


    Original     		O220AB BUK854-800 applications BUK854-800 datasheet BUK854-800 BUK854-800A transistor igbt PDF

    Power Semiconductor Applications Philips Semiconductors

    Abstract: schematic diagram induction bearing heater "Power Semiconductor Applications" Philips BUK854-500IS "CHAPTER 1 Introduction to Power Semiconductors" philips schematic induction cookers schematic diagram igbt inverter welding machine BC548 TRANSISTOR REPLACEMENT TOPFET IN IGNITION COIL BUK 546
    Text: Automotive Power Semiconductor Applications Philips Semiconductors CHAPTER 5 Automotive Power Electronics 5.1 Automotive Motor Control including selection guides 5.2 Automotive Lamp Control (including selection guides) 5.3 The TOPFET 5.4 Automotive Ignition


    Original     		PDF

    Zener Diode 3v 400mW

    Abstract: transistor bc548b BC107 transistor TRANSISTOR bc108 bc547 cross reference chart Transistor BC109 DIAC OB3 DIAC Br100 74HCT IC family spec TRANSISTOR mosfet BF998
    Text: INDEX Order Code Description Page Number – Philips Semiconductors 1 485-068 DS750 Development Kit 1 527-749 87C750 Hardware Kit 1 – Philips Semiconductors Data Communications UART Product Line 2 790-590 80C51 In a Box 3 – 80C51 Family Features 3 –


    Original     		DS750 87C750 80C51 PZ3032-12A44 BUK101-50GS BUW12AF BU2520AF 16kHz BY328 Zener Diode 3v 400mW transistor bc548b BC107 transistor TRANSISTOR bc108 bc547 cross reference chart Transistor BC109 DIAC OB3 DIAC Br100 74HCT IC family spec TRANSISTOR mosfet BF998 PDF

    PCA1318P

    Abstract: philips Pca1318p tda8369 TEA5713 pca1318 ON4801 92112 eeprom on4800 ON4836 eeprom 92112
    Text: PRODUCT DISCONTINUATION DN42 NOTICE December 31, 1999 CONTRACTS DEPT. NOTE NEW CODING DISCONTINUATION TYPE CODE T= Type number fully withdrawn N= Packing option ONLY withdrawn SOURCE CODE C = Customer specific product M = Multi source product S = Sole source product


    Original     		DN-42 REPLACec-99 30-Jun-00 PCA1318P philips Pca1318p tda8369 TEA5713 pca1318 ON4801 92112 eeprom on4800 ON4836 eeprom 92112 PDF

    Philips TdA3619

    Abstract: on4408 tda3619 on4827 TDA5247HT on4785 OF622 FAST RECOVERY DIODE ON4913 on4802 OQ9811T
    Text: PRODUCT DISCONTINUATION DN43 NOTICE June 30, 2000 Exhibit A SEE DN43 NOTICE LETTER FOR APPLICABLE TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol" FOR ADDED INFORMATION.


    Original     		PDF

    BUK854-800A

    Abstract: T0220AB
    Text: Product Specification Philips Semiconductors Insulated Gate Bipolar Transistor IGBT GENERAL DESCRIPTION QUICK REFERENCE DATA SYMBOL Fast-switching N-channel insulated gate bipolar power transistor in a plastic envelope. The device is intended for use in


    OCR Scan     		BUK854-800A T0220AB T0220AB; T0220 BUK854-800A T0220AB PDF

    BUK854-500IS

    Abstract: No abstract text available
    Text: Product Specification Philips Semiconductors Insulated Gate Bipolar Transistor IGBT GENERAL DESCRIPTION N-channel insulated gate bipolar power transistor in a plastic envelope. The device is intended for use in automotive ignition applications, and other general purpose


    OCR Scan     		BUK854-500IS T0220AB Limiting350 BUK854-500IS PDF

    BUK854800A

    Abstract: Bipolar Transistor IGBT buk854-800a BUK854
    Text: Philips Semiconductors Product Specification Insulated Gate Bipolar Transistor IGBT GENERAL DESCRIPTION Fast-switching N-channel insulated gate bipolar power transistor in a plastic envelope. The device is intended for use in motor control, DC/DC and AC/DC


    OCR Scan     		BUK854-800A T0220AB accor00 BUK854800A Bipolar Transistor IGBT buk854-800a BUK854 PDF

    Bipolar Transistor IGBT

    Abstract: No abstract text available
    Text: Philips Semiconductors Product Specification Insulated Gate Bipolar Transistor IGBT GENERAL DESCRIPTION Fast-switching N-channel insulated gate bipolar power transistor in a plastic envelope. The device is intended for use in motor control, DC/DC and AC/DC


    OCR Scan     		BUK854-800A T0220AB Bipolar Transistor IGBT PDF

    BUK854-500IS

    Abstract: D 400 F 6 F BIPOLAR TRANSISTOR mj020 buk854 T0220AB transistor cms transistor igbt
    Text: P HILIPS INTERNATIONAL bSE D B 7110 6 2 b PhilipsSem iconductors DDb4331 Insulated Gate Bipolar Transistor IGBT GENERAL DESCRIPTION PIN SYMBOL PARAMETER VcE VEC lc Plot VcEsat Collector-emltter voltage Reverse Collector-Emitter Voltage Collector current (DC)


    OCR Scan     		711062b DDb4331 BUK854-500IS T0220AB BUK854-500IS D 400 F 6 F BIPOLAR TRANSISTOR mj020 buk854 T0220AB transistor cms transistor igbt PDF

    Untitled

    Abstract: No abstract text available
    Text: Product Specification Philips Semiconductors Insulated Gate Bipolar Transistor IGBT GENERAL DESCRIPTION Fast-switching N-channel insulated gate bipolar power transistor in a plastic envelope. The device is intended for use in motor control, DC/DC and AC/DC


    OCR Scan     		BUK854-800A T0220AB PDF

    BUK854-500IS

    Abstract: T0220AB igbt buk854
    Text: N AMER PHILIPS/DISCRETE t.'iE T> • bbS3^Bl ODBOa^S flbD « A P X Philips Semiconductors Product Specification Insulated Gate Bipolar Transistor IGBT GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel insulated gate bipolar power transistor in a plastic


    OCR Scan     		BUK854-500IS T0220AB BUK854-500IS igbt buk854 PDF

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS /DISC RE TE bTE D • htjS3T31 DOSOTOD TSfl H A P X Philips Semiconductors Product Specification Insulated Gate Bipolar Transistor IGBT GENERAL DESCRIPTION Fast-switching N-channel insulated gate bipolar power transistor in a plastic envelope.


    OCR Scan     		htjS3T31 O220AB BUK854-800A bbS3831 PDF

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE b^E ]> bbSBTBl ODBQfl^S flbO « A P X Product Specification Philips Semiconductors Insulated Gate Bipolar Transistor IGBT GENERAL DESCRIPTION N-channel insulated gate bipolar power transistor in a plastic envelope. The device is intended for use in


    OCR Scan     		-TO220AB BUK854-500IS bb53131 PDF

    220AB

    Abstract: No abstract text available
    Text: Concise Catalogue 1996 Philips Semiconductors POWER SEMICONDUCTORS PowerMOS transistors including TOPFETs and IGBTs V CEsat C t. (A (ms ) type number package (V) Po (W) technology (V) 400 450 500 800 800 2.2 1.8 2.0 3.5 3.5 15 15 15 12 24 10 8 6 0.4 0.4


    OCR Scan     		BUK856-400IZ BUK856-450IX BUK854-500IS BUK854-800A BUK856-800A O-220AB TQ-220AB 54-800A 220AB PDF

    d 434 mosfet

    Abstract: T0220AB mosfet 345 T0-220AB mosfet MOSFET N BUK854-500IS 200B 100a mosfet MOSFET 606
    Text: P hilip s S e m ico n d u cto rs Index PowerMOS Transistors including TOPFETs and IGBTs ¡PAGE | TYPE NUMBER |TECHNOLOGY ENVELOPE BUK100-50DL TOPFET T0220AB 24 BUK100-50GL TOPFET T0220AB 32 BUK100-50GS TOPFET T0220AB 41 BUK101-50DL TOPFET T0220AB 50 BUK101-50GL


    OCR Scan     		BUK100-50DL BUK100-50GL BUK100-50GS BUK101-50DL BUK101-50GL BUK101-50GS BUK102-50DL BUK102-50GL BUK102-50GS BUK104-50L d 434 mosfet T0220AB mosfet 345 T0-220AB mosfet MOSFET N BUK854-500IS 200B 100a mosfet MOSFET 606 PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product Specification Insulated Gate Bipolar Transistor tGBT GENERAL DESCRIPTION Fast-switching N-channel insulated gate bipolar power transistor in a plastic envelope. The device is intended for use in motor control, DC/DC and AC/DC


    OCR Scan     		BUK854-800A T0220AB PDF

    BUK417-500B

    Abstract: TOPFETs FETs T0-220AB mosfet BUK454-600 BUK617-500BE BUK551-100A PHILIPS MOSFET igbt Philips Semiconductors Selection Guide Igbts guide
    Text: Philips Semiconductors PowerMOS Transistors including TO P FETs and IGBTs V DS V @ ID (A) Rdsjon) (ß) Id w Selection Guide Pd (W) TYPE NUMBER TECH NO LO GY ENVELOPE SOT263 50 0.028 25 50 125 BUK106-50L TOPFET 50 0.028 25 50 125 BUK106-50S TOPFET SOT263


    OCR Scan     		T0220AB OT186 OT186 BUK856-400IZ BUK417-500B TOPFETs FETs T0-220AB mosfet BUK454-600 BUK617-500BE BUK551-100A PHILIPS MOSFET igbt Philips Semiconductors Selection Guide Igbts guide PDF

    T0-220AB

    Abstract: PHILIPS MOSFET igbt mosfet switch BUK866 4001z
    Text: Philips Semiconductors PowerMOS Transistors including TOPFETs and IGBTs Types added to the range since the last issue of data handbook SC13 1995 are shown in bold print, TYPE NUMBER TECHNOLOGY PACKAGE PAGE BUK100-50DL TOPFET T0220AB 38 BUK100-50GL TOPFET


    OCR Scan     		BUK100-50DL BUK100-50GL BUK100-50GS BUK101-50DL BUK101-50GL BUK101-50GS BUK102-50DL BUK102-50GL BUK102-50GS BUK104-50L T0-220AB PHILIPS MOSFET igbt mosfet switch BUK866 4001z PDF

    837 mosfet

    Abstract: 912 MOSFET T0-220AB PHILIPS MOSFET igbt BUK108-50DL 50SP 200b mosfet MOSFET 1053 mosfet handbook
    Text: Philips Semiconductors PowerMOS Transistors including TOPFETs and IGBTs Types added to the range since the last issue of data handbook SC13 1995 are shown in bold print. TYPE NUMBER TECHNOLOGY PACKAGE BUK100-50DL TOPFET T0220AB PAGE 38 BUK100-50GL TOPFET


    OCR Scan     		BUK100-50DL BUK100-50GL BUK100-50GS BUK101-50DL BUK101-50GL BUK101-50GS BUK102-50DL BUK102-50GL BUK102-50GS BUK104-50L 837 mosfet 912 MOSFET T0-220AB PHILIPS MOSFET igbt BUK108-50DL 50SP 200b mosfet MOSFET 1053 mosfet handbook PDF

    PHILIPS MOSFET igbt

    Abstract: SOT-263 SOT263 d 1047 d 1047 transistor igbt philips BUK854-800A BUK856-800A philips power mosfet
    Text: N AMER PHILIPS/DISCRETE 38 25E 'D • bbS3T31 OOlbSlb 4 ■ Power Devices POWER MOSFET TRANSISTORS CURRENT SEN SIN G FET’s In order of Voltage/Ros on Vos m a x (V) TYPE NO. PACKAGE OUTLINE to max Plot MAX R d s o n MAX (A) (W) (n ) 60 60 BUK793-60 BUK795-60


    OCR Scan     		bbS3T31 BUK793-60 OT-263 BUK795-60 BUK793-100 BUK795-100 BUK993-60 PHILIPS MOSFET igbt SOT-263 SOT263 d 1047 d 1047 transistor igbt philips BUK854-800A BUK856-800A philips power mosfet PDF

    BUK444-200

    Abstract: 100a mosfet Philips Semiconductors Selection Guide BUK454-60H BUK108-50DL BUK102-50GL BUk2 BUK44 BUK9630-55 BUK9570-55
    Text: Philips Semiconductors TOPFETs Selection Guide VDs Rdsion lD Id V) (fl) (A) (A) Pd (W) TYPE NUMBER TECHNOLOGY ENVELOPE 50 0.028 25 50 125 BUK106-50L TOPFET 50 0.028 25 50 125 BUK106-50LP TOPFET SOT263-O1 50 0.028 25 50 125 BUK116-50L TOPFET SOT426 50


    OCR Scan     		7-800B BUK446-800B BUK454-800A BUK444-800A BUK454-800B BUK444-800B BUK456-1OOOB BUK446-1000B T0220AB OT186 BUK444-200 100a mosfet Philips Semiconductors Selection Guide BUK454-60H BUK108-50DL BUK102-50GL BUk2 BUK44 BUK9630-55 BUK9570-55 PDF

    buk7530-55

    Abstract: mosfet-n SOT166 TOPFET buk7530
    Text: SELECTION GUIDE Page TOPFETs 14 PowerMOS Transistors 16 Insulated Gate Bipolar Transistors 23 Philips Semiconductors TOPFETs VDS Selection Guide @ID FUSION O) (V) (A) Id w Pd (W) TYPE NUMBER TECHNOLOGY ENVELOPE 50 0.028 25 50 125 BUK106-50L TOPFET SOT263


    OCR Scan     		56-800A BUK446-800A BUK456-800B BUK446-800B BUK454-800A BUK444-800A BUK454-800B BUK444-800B BUK456-1000B BUK446-1000B buk7530-55 mosfet-n SOT166 TOPFET buk7530 PDF