20N60C3DR
Abstract: 20N60C3D HGTG20N60C3DR 20n60c3 INTEPOWER LD26 RURP1560
Text: HGTG20N60C3DR 40A, 600V, Rugged, UFS Series N-Channel IGBT with Anti-Parallel Ultrafast Diode November 1996 Features Description • 40A, 600V at TC = 25oC This family of IGBTs was designed for optimum performance in the demanding world of motor control operation as well as
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HGTG20N60C3DR
150oC
330ns
20N60C3DR
20N60C3D
HGTG20N60C3DR
20n60c3
INTEPOWER
LD26
RURP1560
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g20n60b3d
Abstract: HGTG20N60B3D MOSFET 40A 600V LD26 RHRP3060
Text: S E M I C O N D U C T O R HGTG20N60B3D 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode January 1997 Features Package • 40A, 600V at TC = 25oC JEDEC STYLE TO-247 • Typical Fall Time . . . . . . . . . . . . . . . . . . . . . . . 140ns at 150oC
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HGTG20N60B3D
O-247
140ns
150oC
HGTG20N60B3D
150oC.
g20n60b3d
MOSFET 40A 600V
LD26
RHRP3060
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G20N60B3D
Abstract: HGTG20N60B3D LD26 RHRP3060 G20N60B3
Text: HGTG20N60B3D Semiconductor 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode November 1997 Features Description • 40A, 600V at TC = 25oC • Hyperfast Anti-Parallel Diode The HGTG20N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and
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HGTG20N60B3D
HGTG20N60B3D
150oC.
RHRP3060.
G20N60B3D
LD26
RHRP3060
G20N60B3
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GW40NC60WD
Abstract: STGW40NC60WD JESD97 icl 298
Text: STGW40NC60WD N-channel 40A - 600V - TO-247 Very fast switching PowerMESH IGBT General features Type VCES STGW40NC60WD 600V IC VCE sat (Max)@ 25°C @100°C <2.5V 40A • Low CRES / CIES ratio (no cross conduction susceptibility) ■ High frequency operation
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STGW40NC60WD
O-247
GW40NC60WD
STGW40NC60WD
JESD97
icl 298
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STGW40NC60WD
Abstract: icl 298 HF IGBT GW40NC60WD ic MARKING QG JESD97
Text: STGW40NC60WD N-channel 40A - 600V - TO-247 Very fast switching PowerMESH IGBT General features Type VCES STGW40NC60WD 600V IC VCE sat (Max)@ 25°C @100°C <2.5V 40A • Low CRES / CIES ratio (no cross conduction susceptibility) ■ High frequency operation
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STGW40NC60WD
O-247
STGW40NC60WD
icl 298
HF IGBT
GW40NC60WD
ic MARKING QG
JESD97
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GW39NC60
Abstract: No abstract text available
Text: STGW39NC60VD N-channel 40A - 600V - TO-247 Very fast switching PowerMESH IGBT Features Type VCES VCE sat (Max)@ 25°C IC @100°C <2.5V 40A STGW39NC60VD 600V • Low CRES / CIES ratio (no cross conduction susceptibility) ■ High frequency operation ■
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STGW39NC60VD
O-247
STGW39NC60VD
O-247
GW39NC60
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schematic diagram "induction heating"
Abstract: schematic diagram induction heating diagram induction schematic diagram induction
Text: STGW39NC60VD N-channel 40A - 600V - TO-247 Very fast switching PowerMESH IGBT Features Type VCES VCE sat (Max)@ 25°C IC @100°C <2.5V 40A STGW39NC60VD 600V • Low CRES / CIES ratio (no cross conduction susceptibility) ■ High frequency operation ■
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STGW39NC60VD
O-247
STGW39NC60VD
O-247
schematic diagram "induction heating"
schematic diagram induction heating
diagram induction
schematic diagram induction
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STGW30NC60VD
Abstract: 600V 20A 50KHz GW30NC60VD JESD97 schematic diagram UPS IGBT 15V 20A SMPS circuit diagram
Text: STGW30NC60VD N-channel 40A - 600V - TO-247 Very fast switching PowerMESH IGBT General features Type VCES STGW30NC60VD 600V VCE sat (Max)@ 25°C IC @100°C <2.5V 40A • High current capability ■ High frequency operation up to 50KHz ■ Very soft ultra fast recovery antiparallel diode
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STGW30NC60VD
O-247
STGW30NC60VD
50KHz
O-247
600V 20A 50KHz
GW30NC60VD
JESD97
schematic diagram UPS IGBT
15V 20A SMPS circuit diagram
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STGW30NC60VD
Abstract: GW30NC60VD JESD97
Text: STGW30NC60VD N-channel 40A - 600V - TO-247 Very fast switching PowerMESH IGBT General features Type VCES STGW30NC60VD 600V VCE sat (Max)@ 25°C IC @100°C <2.5V 40A • High current capability ■ High frequency operation up to 50KHz ■ Very soft ultra fast recovery antiparallel diode
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STGW30NC60VD
O-247
STGW30NC60VD
50KHz
GW30NC60VD
JESD97
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W39NC60VD
Abstract: No abstract text available
Text: STGW39NC60VD N-channel 40A - 600V - TO-247 Very fast switching PowerMESH IGBT PRELIMINARY DATA General features Type VCES VCE sat (Max)@ 25°C IC @100°C <2.5V 40A STGW39NC60VD 600V • Low CRES / CIES ratio (no cross conduction susceptibility) ■ High frequency operation
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STGW39NC60VD
O-247
STGW39NC60VD
O-247
W39NC60VD
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Untitled
Abstract: No abstract text available
Text: STGW39NC60VD N-channel 40A - 600V - TO-247 Very fast switching PowerMESH IGBT PRELIMINARY DATA General features Type VCES VCE sat (Max)@ 25°C IC @100°C <2.5V 40A STGW39NC60VD 600V • Low CRES / CIES ratio (no cross conduction susceptibility) ■ High frequency operation
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STGW39NC60VD
O-247
STGW39NC60VD
O-247
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GW39NC60
Abstract: GW39NC60VD JESD97 STGW39NC60VD
Text: STGW39NC60VD N-channel 40A - 600V - TO-247 Very fast switching PowerMESH IGBT PRELIMINARY DATA General features Type VCES VCE sat (Max)@ 25°C IC @100°C <2.5V 40A STGW39NC60VD 600V • Low CRES / CIES ratio (no cross conduction susceptibility) ■ High frequency operation
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STGW39NC60VD
O-247
STGW39NC60VD
GW39NC60
GW39NC60VD
JESD97
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Untitled
Abstract: No abstract text available
Text: IXGR72N60B3H1 GenX3TM 600V IGBT w/ Diode VCES IC110 VCE sat tfi(typ) (Electrically Isolated Tab) = = £ = 600V 40A 1.80V 92ns Medium Speed Low Vsat PT IGBT ISOPLUS247TM for 5-40 kHz Switching Symbol Test Conditions Maximum Ratings VCES TJ = 25C to 150C
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IXGR72N60B3H1
IC110
ISOPLUS247TM
IF110
72N60B3
02-10-09-D
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information GenX3TM 600V IGBT IXGR72N60B3H1 VCES IC110 VCE sat tfi(typ) (Electrically Isolated Back Surface) = = ≤£ = 600V 40A 1.80V 92ns Medium Speed Low Vsat PT IGBT for 5-40 kHz Switching ISOPLUS 247TM Symbol Test Conditions Maximum Ratings
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IXGR72N60B3H1
IC110
247TM
IF110
72N60B3
02-10-09-D
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G20N60B3D
Abstract: BVces HGTG20N60B3D LD26 RHRP3060 igbt 600V 45UH
Text: S E M I C O N D U C T O R HGTG20N60B3D 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode January 1996 Features Package • 40A, 600V at TC = +25oC JEDEC STYLE TO-247 • Typical Fall Time - 140ns at +150oC E C • Short Circuit Rated
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HGTG20N60B3D
O-247
140ns
150oC
HGTG20N60B3D
150oC.
RHRP3060
1-800-4-HARRIS
G20N60B3D
BVces
LD26
igbt 600V
45UH
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FGH40N60SFD
Abstract: FGH40N60SFDTU
Text: FGH40N60SFD tm 600V, 40A Field Stop IGBT Features General Description • High current capability • Low saturation voltage: VCE sat =2.3V @ IC = 40A • High input impedance • Fast switching Using Novel Field Stop IGBT Technology, Fairchild’s new sesries of Field Stop IGBTs offer the optimum performance for
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FGH40N60SFD
100oC
FGH40N60SFD
FGH40N60SFDTU
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Untitled
Abstract: No abstract text available
Text: FGH40N60UFD tm 600V, 40A Field Stop IGBT Features General Description • High current capability • Low saturation voltage: VCE sat =1.8V @ IC = 40A • High input impedance • Fast switching Using Novel Field Stop IGBT Technology, Fairchild’s new sesries of Field Stop IGBTs offer the optimum performance for
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FGH40N60UFD
100oC
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G20N60B3
Abstract: G20N60 HGTG20N60B3 G20N60B HGTP20N60B3 LD26 RHRP3060 hg*20n60
Text: HGTP20N60B3, HGTG20N60B3 S E M I C O N D U C T O R 40A, 600V, UFS Series N-Channel IGBT February 1996 Features • • • • • Package JEDEC TO-220AB COLLECTOR EMITTER 40A, 600V at TC = +25oC Square Switching SOA Capability Typical Fall Time - 140ns at +150oC
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HGTP20N60B3,
HGTG20N60B3
O-220AB
140ns
150oC
O-247
HGTP20N60B3
HGTG20N60B3
1-800-4-HARRIS
G20N60B3
G20N60
G20N60B
LD26
RHRP3060
hg*20n60
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20n60c3DR
Abstract: 20n60c3 HGTG20N60C3DR 20n60c* equivalent INTEPOWER HGTG LD26 RURP1560 20N60C3D
Text: HGTG20N60C3DR S E M I C O N D U C T O R 40A, 600V, Rugged, UFS Series N-Channel IGBT with Anti-Parallel Ultrafast Diode November 1996 Features Description • 40A, 600V at TC = 25oC This family of IGBTs was designed for optimum performance in the demanding world of motor control operation as well as
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HGTG20N60C3DR
150oC
330ns
1-800-4-HARRIS
20n60c3DR
20n60c3
HGTG20N60C3DR
20n60c* equivalent
INTEPOWER
HGTG
LD26
RURP1560
20N60C3D
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G20N60B3D
Abstract: G20N60B hg*20n60 Hgtg20n60
Text: HGTG20N60B3D S E M I C O N D U C T O R 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode November 1997 Features Description • 40A, 600V at TC = 25oC • Hyperfast Anti-Parallel Diode The HGTG20N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and
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HGTG20N60B3D
HGTG20N60B3D
150oC.
RHRP3060.
G20N60B3D
G20N60B3D
G20N60B
hg*20n60
Hgtg20n60
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FGH40N60SMDF
Abstract: No abstract text available
Text: FGH40N60SMDF tm 600V, 40A Field Stop IGBT Features General Description • Maximum Junction Temperature : TJ =175oC • Positive Temperaure Co-efficient for easy parallel operating • High current capability • Low saturation voltage: VCE sat =1.9V(Typ.) @ IC = 40A
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FGH40N60SMDF
175oC
FGH40N60SMDF
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20n60b3d
Abstract: G20N60B
Text: HGTG20N60B3D 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Package Features • 40A, 600V at T c = +25°C JEDEC STYLE TO-247 • Typical Fall Time - 140ns at +150°C • Short Circuit Rated • Low Conduction Loss • Hyperfast Anti-Parallel Diode
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HGTG20N60B3D
140ns
O-247
HGTG20N60B3D
RHRP3Q60.
20n60b3d
G20N60B
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20N60C3DR
Abstract: No abstract text available
Text: X HGTG20N60C3DR M Aß , 40A, 600V, Rugged, UFS Series N-C hannel IGBT w ith A nti-Parallel U ltrafast Diode November 1996 Features Description • 40A, 600V at T c = 25°C This family of IGBTs was designed for optimum performance in the demanding world of motor control operation as well as
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HGTG20N60C3DR
330ns
20N60C3DR
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PJ 969 diode
Abstract: TA49050 pj 809 pj 986 diode
Text: S E M I C O N D U C HGTP20N60B3 it: March1995 40A, 600V, UFS Series N-Channel IGBT Features Package • 40A, 600V at Tc = +25°C JEDEC TO-220AB • Square Switching SOA Capability • Typical Fall Time - 140ns at +150°C • Short Circuit Rated • Low Conduction Loss
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HGTP20N60B3
O-220AB
140ns
HGTP20N60B3
PJ 969 diode
TA49050
pj 809
pj 986 diode
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