4mbi400vg
Abstract: 4MBI400VG-060R-50 4mbi400vg060r50 4mbi400vg-060
Text: / 4MBI400VG-060R-50 IGBT Modules IGBT MODULE V series 600V / 400A / IGBT, RB-IGBT 4 in one package Features Higher Efficiency Optimized A (T-type) -3 level circuit Low inductance module structure Featuring Reverse Blocking IGBT (RB-IGBT)
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4MBI400VG-060R-50
4mbi400vg
4MBI400VG-060R-50
4mbi400vg060r50
4mbi400vg-060
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40n60 igbt
Abstract: 35N120u1 B1116 equivalent for 30n60 40n60 equivalent 30n60 equivalent 30n60 to-220 ixsn 35N120U1 igbt equivalent to 40n60 80n60
Text: SCSOA IGBT S-Series / D-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode Short Circuit Current Rated SCSOA IGBT S-Series Contents IGBT VCES max V High Speed Low VCE(sat) 600 IC VCE(sat) max TC = 25 °C TC = 25 °C A V TO-220 (IXSP) TO-263
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O-220
O-263
O-247
16N60
B1-10
24N60
30N60
40N60
40n60 igbt
35N120u1
B1116
equivalent for 30n60
40n60 equivalent
30n60 equivalent
30n60 to-220
ixsn 35N120U1
igbt equivalent to 40n60
80n60
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4MBI300VG-120R-50
Abstract: 4MBI300VG120 4MBI300 chip Express t2 4mbi300vg 4MBI300VG-120 igbt 600V 300A
Text: / 4MBI300VG-120R-50 IGBT Modules IGBT MODULE V series 1200V / 300A / IGBT, 600V/300A/RB-IGBT, 4 in one package Features Higher Efficiency Optimized A (T-type) -3 level circuit Low inductance module structure
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4MBI300VG-120R-50
4MBI300VG-120R-50
4MBI300VG120
4MBI300
chip Express t2
4mbi300vg
4MBI300VG-120
igbt 600V 300A
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200n60
Abstract: 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120
Text: HiPerFASTTM IGBT G-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE(sat) 600 1000 TO-220 TO-263 TO-247 IC VCE(sat) (IXGP) (IXGA) (IXGH) max TC = 25 °C TC=25 °C A V 40 56 60 40
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PLUS247
20N30
28N30
30N30
40N30
31N60
38N60
41N60
60N60
O-264
200n60
20N30
n60c
50N60
7N60B
IC IGBT 25N120
IC600
80n60
60n60 igbt
25N120
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MITSUBISHI CM400
Abstract: MITSUBISHI CM300 H BRIDGE inverters circuit diagram using igbt NPN/transistor NEC K 2500 HALF BRIDGE NPN DARLINGTON POWER MODULE ups circuit diagram using igbt IGBT h-series application note CM30 igbt CM400 MITSUBISHI cm50-24h
Text: MITSUBISHI SEMICONDUCTORS POWER MODULES MOS USING IGBT MODULES 4.0 Using IGBT Modules 4.1 Structure and Operation of IGBT Module Mitsubishi IGBT modules are designed to be rugged, low loss and easy to use. Use of advanced processing technologies gives low
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20kHz
MITSUBISHI CM400
MITSUBISHI CM300
H BRIDGE inverters circuit diagram using igbt
NPN/transistor NEC K 2500
HALF BRIDGE NPN DARLINGTON POWER MODULE
ups circuit diagram using igbt
IGBT h-series application note
CM30 igbt
CM400
MITSUBISHI cm50-24h
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GAE75BA60
Abstract: No abstract text available
Text: IGBT MODULE GAE75BA60 UL;E76102 M SanRex IGBT Module GAE75BA60 is designed for high speed, high current switching applications. This Module is electrically isolated and contains IGBT connected with clamp diode in series, soft recovery diode trr=0.1 s reverse connected across IGBT.
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GAE75BA60
E76102
GAE75BA60
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7463
Abstract: APT32GU30B T0-247
Text: APT32GU30B 300V POWER MOS 7 IGBT TO-247 ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT32GU30B
O-247
7463
APT32GU30B
T0-247
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GAE75BA60
Abstract: No abstract text available
Text: IGBT MODULE GAE75BA60 UL;E76102 （M） SanRex IGBT Module GAE75BA60 is designed for high speed, high current switching applications. This Module is electrically isolated and contains IGBT connected with clamp diode in series, soft recovery diode trr=0.1 s reverse connected across IGBT.
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GAE75BA60
E76102
GAE75BA60
3-M5depth12mm
VCES600V
31MAX
32MAX
IC75A
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GAE100BA60
Abstract: GAE150BA60 GAE75BA60 sanrex IGBT GH-039 GH-038
Text: IGBT MODULE GAE75BA60 UL;E76102 （M） SanRex IGBT Module GAE75BA60 is designed for high speed, high current switching applications. This Module is electrically isolated and contains IGBT connected with clamp diode in series, soft recovery diode trr=0.1 s reverse connected across IGBT.
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GAE75BA60
E76102
GAE75BA60
3-M5depth12mm
VCES600V
31MAX
32MAX
IC75A
GAE100BA60
GAE150BA60
sanrex IGBT
GH-039
GH-038
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PDF
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7465
Abstract: APT83GU30B APT83GU30S UJ 45A diode
Text: APT83GU30B APT83GU30S 300V POWER MOS 7 IGBT TO-247 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT83GU30B
APT83GU30S
O-247
7465
APT83GU30B
APT83GU30S
UJ 45A diode
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APT26GU30B
Abstract: T0-247 432F
Text: APT26GU30B APT26GU30B TYPICAL PERFORMANCE CURVES 300V POWER MOS 7 IGBT TO-247 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT26GU30B
O-247
Colle098)
APT26GU30B
T0-247
432F
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PDF
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ic 7472
Abstract: APT32GU30K
Text: APT32GU30K APT32GU30K TYPICAL PERFORMANCE CURVES 300V POWER MOS 7 IGBT TO-220 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT32GU30K
O-220
ic 7472
APT32GU30K
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENA2308A NGTB30N60L2WG N-Channel IGBT 600V, 30A, VCE sat ;1.4V, TO-247-3L with Low VF Switching Diode Features http://onsemi.com Electrical Connection • IGBT VCE(sat)=1.4V typ. (IC=30A, VGE=15V) IGBT IC=100A (Tc=25C) IGBT tf=80ns typ.
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ENA2308A
NGTB30N60L2WG
O-247-3L
A2308-8/8
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Untitled
Abstract: No abstract text available
Text: APTGV25H120BG Trench & Field Stop IGBT Q1, Q3: VCES = 1200V , IC = 25A @ Tc = 80°C Boost chopper + Full - Bridge NPT & Trench + Field Stop IGBT Power module K K VBUS1 Fast NPT IGBT Q5: VCES = 1200V ; IC = 50A @ Tc = 80°C VBUS2 Q1 CR5 G1 Fast NPT IGBT Q2, Q4:
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APTGV25H120BG
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igbt 150v 30a
Abstract: 7464 ic datasheet 60A 150V IGBT
Text: TYPICAL PERFORMANCE CURVES APT60GU30B APT60GU30S APT60GU30B_S 300V POWER MOS 7 IGBT TO-247 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT60GU30B
APT60GU30S
O-247
igbt 150v 30a
7464 ic datasheet
60A 150V IGBT
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Untitled
Abstract: No abstract text available
Text: MIG150J202H TOSHIBA Integrated IGBT Module Silicon N Channel IGBT MIG150J202H High Power Switching Applications Motor Control Applications l Integrates inverter, brake power circuits & control circuits IGBT drive units, protection units for over-current,
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MIG150J202H
2-110A1A
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IGBT full bridge
Abstract: APTGV25H120BG IGBT 1200V 60A APT0501 APT0502 600V igbt dc to dc boost converter
Text: APTGV25H120BG Trench & Field Stop IGBT Q1, Q3: VCES = 1200V , IC = 25A @ Tc = 80°C Boost chopper + Full - Bridge NPT & Trench + Field Stop IGBT Power module K K VBUS1 Fast NPT IGBT Q5: VCES = 1200V ; IC = 50A @ Tc = 80°C VBUS2 Q1 CR5 Q3 G3 CR3 CR1 G1 Fast NPT IGBT Q2, Q4:
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APTGV25H120BG
IGBT full bridge
APTGV25H120BG
IGBT 1200V 60A
APT0501
APT0502
600V igbt dc to dc boost converter
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENA2308B NGTB30N60L2WG N-Channel IGBT With Low VF Switching Diode 600V, 30A, VCE sat ;1.4V http://onsemi.com Features Electrical Connection • IGBT VCE(sat)=1.4V typ. (IC=30A, VGE=15V) • IGBT IC=100A (Tc=25°C) • IGBT tf=80ns typ. • Low switching loss in higher frequency applications
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ENA2308B
NGTB30N60L2WG
A2308-8/8
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74hc06
Abstract: TLP250 IGBT 10KHz IR2171 ptmb50e6c igbt rcd SCR 207A 50A 1200V SCR SCR 100A 1200V Equivalent for SCR 207A
Text: 目录 各种功率半导体器件和IGBT IGBT模块电路构成 IGBT模块的额定值和特性 IGBT模块的损耗和散热设计 IGBT模块的门极驱动 上桥臂的驱动 3相供电VVVF变频器系统框图 IGBT元件的短路和过电压保护 IGBT元件的过电压保护缓冲电路
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PHMB400B12
PDMB100B12C
1/2LiC21/2Cse2
600V1
200A1
200V800AIGBT3
100kWIGBT
200A1200V800A
74hc06
TLP250
IGBT 10KHz
IR2171
ptmb50e6c
igbt rcd
SCR 207A
50A 1200V SCR
SCR 100A 1200V
Equivalent for SCR 207A
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PDF
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PM15CMA060
Abstract: PM15CMA ls igbt block circuit diagram for igbt driver 3 phase UPS block diagram
Text: International [regjRectifier provisional PD912£ PM15CMA060 IGBT INTELLIGENT MODULE Features • 3 phase IGBT bridge with drive and protection circuit. • 2kW output power at 300VDC, 8kHz, Tc = 85°C • "UltraFast" IGBT and “HEXFRED"™ LHtrafast, Soft Recovery
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OCR Scan
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300VDC,
25kHz
PM15CMA060
PM15CMA060
PM15CMA
ls igbt block
circuit diagram for igbt driver
3 phase UPS block diagram
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PDF
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pm20cma060
Abstract: 3 phase rectifier circuit diagram igbt ultrafast n channel 600v 20a IGBT h 9128 Alcohol detection with vehicle controlling pm20c P channel 600v 20a IGBT resistor sms diode B5C 3 phase UPS block WITH CIRCUIT diagram
Text: International fegjRectifier PD 9128 provisional_ PM20CMA060 IGBT INTELLIGENT MODULE Features • 3 phase IGBT bridge with drive and protection circuit. • 3 kW output power at 300VDC, 8kHz, Tc = 85°C • "UltraFast" IGBT and “HEXFRED”™ Ultratast, Soft Recovery
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OCR Scan
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PM20CMA060
300VDC,
25kHz
PM20CMA060
10-Timing
S5M52
3 phase rectifier circuit diagram igbt
ultrafast n channel 600v 20a IGBT
h 9128
Alcohol detection with vehicle controlling
pm20c
P channel 600v 20a IGBT
resistor sms
diode B5C
3 phase UPS block WITH CIRCUIT diagram
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ultrafast n channel 600v 20a IGBT
Abstract: No abstract text available
Text: International IMlRecbfier provisional P D -9.1284 IPM2060 IGBT INTELLIGENT MODULE Features • • • • • • • • • 3 phase IGBT bridge with drive and protection circuit. 3 kW output power at 300VDC, 8kHz, Tc = 85°C "UltraFast" IGBT and "HEXFRED"™ Ultrafast, Soft Recovery Diodes,
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OCR Scan
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300VDC,
25kHz
IPM2060
IPM2060
HEXFRED2060
10-Timing
4flS5452
0022S2M
ultrafast n channel 600v 20a IGBT
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IPM1560
Abstract: high side IGBT driver optocoupler
Text: P D -9.1283 International S Rectifier PROVISIONAL IP M 1 56 0 IGBT INTELLIGENT MODULE Features • • • • • • • • • 3 phase IGBT bridge with drive and protection circuit. 2kW output power at 300VDC, 8kHz, Tc = 85°C "UltraFast“ IGBT and "HEXFRED"™ Ultrafast, Soft Recovery Diodes.
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OCR Scan
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300VDC,
25kHz
IPM1560
10-Timing
4A55M52
Q0225
high side IGBT driver optocoupler
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MIG20J805H TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG20J805H HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • Integrates Inverter, Converter Power Circuits in One Package. • Output Inverter Stage : 30 20A/600V IGBT
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OCR Scan
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MIG20J805H
0A/600V
0A/800V
961001EAA1
iiRS13
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