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    IGBT 3.3KV Search Results

    IGBT 3.3KV Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    IGBT 3.3KV Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    A 3150V

    Abstract: HIGH VOLTAGE DIODE 3.3kv 3150v IGBT 3kv Measurement of stray inductance for IGBT FZ1200R33KF1 scsoa IC A 3150V eupec igbt 3.3kv dc motor speed control circuit diagram with IGBT
    Text: Improved Characteristics of 3.3kV IGBT Modules M.Hierholzer, R.Bayerer, eupec GmbH & Co KG, Warstein, Germany A.Porst, H.Brunner, Siemens AG, München, Germany 3.3kV IGBT modules are available on the market since beginning of 1996. In most applications the IGBT


    Original     		PDF 500Hz-1000Hz A 3150V HIGH VOLTAGE DIODE 3.3kv 3150v IGBT 3kv Measurement of stray inductance for IGBT FZ1200R33KF1 scsoa IC A 3150V eupec igbt 3.3kv dc motor speed control circuit diagram with IGBT

    6.5kV IGBT

    Abstract: eupec igbt 3.3kv igbt 3.3kv IEC1287 eupec igbt 6.5kV IGBT 3kv 2902 eupec igbt 3.3kV 33KV
    Text: Press Release – December 16th 2002 Warstein eupec is introducing new 3.3kV high insulating IGBT modules eupec’s new 3.3kV IGBT modules offer extremely high insulation with test voltage VISOL of 10.2kV for center tapped circuits. The new 3.3kV module family is optimized for center tapped circuits


    Original     		PDF IEC1287. D-59581 6.5kV IGBT eupec igbt 3.3kv igbt 3.3kv IEC1287 eupec igbt 6.5kV IGBT 3kv 2902 eupec igbt 3.3kV 33KV

    IEGT

    Abstract: HIGH VOLTAGE 3.3kv mosfet Brunner vertical mosfet scsoa JF-25 3.3kv diode 600V GaN mitsubishi igbt cm
    Text: IGBT Module Chip Improvements for Industrial Motor Drives John F. Donlon Katsumi Satoh Powerex, Inc. 173 Pavilion Lane Youngwood, PA USA Mitsubishi Electric Corporation Power Semiconductor Device Works Fukuoka JAPAN Abstract—Since the introduction of the IGBT module,


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    FZ1200R33KF1

    Abstract: igbt 500V 2A IGBT 3.3kv eupec igbt 3.3kv siemens IGBT 600a Brunner IGBT FZ1200 HIGH VOLTAGE DIODE 3.3kv
    Text: Application and Characteristics of High Voltage IGBT Modules M.Hierholzer, eupec GmbH & Co KG, Warstein, Germany A.Porst, Th.Laska, H.Brunner, Siemens AG, München, Germany New IGBT modules with blocking voltage of 3300V and current capability up to 1200A became


    Original     		PDF 200V/1600V FZ1200R33KF1 FZ1200R33KF1 igbt 500V 2A IGBT 3.3kv eupec igbt 3.3kv siemens IGBT 600a Brunner IGBT FZ1200 HIGH VOLTAGE DIODE 3.3kv

    1287-standard

    Abstract: SiC IGBT High Power Modules eupec igbt 3.3kv failure analysis IGBT PCIM 96 igbt failure fit HIGH VOLTAGE DIODE 3.3kv "DATA MATRIX" EUPEC
    Text: Further Improvements in the Reliability of IGBT Modules Thomas Schütze, Hermann Berg, Martin Hierholzer eupec GmbH & Co. KG Max-Planck-Straße 5 59581 Warstein, Germany Abstract- This paper gives a survey of the measures and the resulting improvements of IGBT module reliability


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    BUSBAR calculation

    Abstract: BUSBAR calculation datasheet calculation of IGBT snubber 3 level inverter 3 phase motor inverters circuit diagram igbt 3 phase inverters circuit diagram igbt DC Link capacitor calculation design dc link inverter IGBT inverter calculation inductances types
    Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Design Aspects for Inverters with IGBT High Power Modules Dr.-Ing. Th. Schütze, eupec GmbH & Co KG, Warstein, Germany Abstract With regard to the blocking ability and efficiency of the new 3.3 kV IGBT high voltage modules IHV with nominal


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    eupec igbt 10kv

    Abstract: Inverter Delta 6.5kV IGBT igbt 3.3kv eupec igbt 3.3kv EUPEC Thyristor 1200A Thyratron dc to ac inverter eupec igbt 6.5kV thyratron DIAGRAM thyristor inverter
    Text: The new 6.5kV IGBT module: a reliable device for medium voltage applications Thomas Schuetze, Herman Berg, Oliver Schilling eupec GmbH Max-Planck-Straße 5 59581 Warstein Germany Tel.: +49 2902 764-1153 Fax: +49 2902 764-1150 thomas.schuetze@eupec.com In an effort to combine the advantages of modern high voltage IGBT chip and packaging technology


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    HIGH VOLTAGE 3.3kv mosfet

    Abstract: STR D 6601 mitsubishi electric igbt module igbt 3.3kv HIGH VOLTAGE DIODE 3.3kv HVIGBT from Mitsubishi electric 80E04 3.3kv diode IC1 4558 powerex cd
    Text: Design Approach of Newly Developed 3.3kV IGBT Modules 1 Shinichi Iura(1), John F. Donlon(2), Eckhard Thal(3) MITSUBISHI ELECTRIC, POWER DEVICE WORKS 1-1-1 Imajukuhigashi Nishi-ku Fukuoka, Japan Tel.: +81 / (92) – 805.3395 Fax: +81 / (92) – 805.3745 (2)


    Original     		PDF com/library/content/c020311b HIGH VOLTAGE 3.3kv mosfet STR D 6601 mitsubishi electric igbt module igbt 3.3kv HIGH VOLTAGE DIODE 3.3kv HVIGBT from Mitsubishi electric 80E04 3.3kv diode IC1 4558 powerex cd

    FZ1200R33KF2C

    Abstract: igbt 3.3kv planar busbar design HIGH VOLTAGE DIODE 3.3kv FZ1500R33HE3 FZ1500R33HL3 the calculation of the power dissipation for the IGBT i300a IGBT FZ1200 BUSBAR calculation
    Text: High Power IGBT modules with improved mechanical performance and advanced 3.3kV IGBT3 chip technology Th. Schütze1 , J. Biermann1), R. Spanke 1), M. Pfaffenlehner2) 1 2 Infineon Technologies AG, Max-Planck-Straße, D-59581 Warstein, Germany Infineon Technologies AG, Am Campeon 1 - 12, D-85579 Neubiberg, Germany


    Original     		PDF D-59581 D-85579 06K/kW FZ1500R33HE3 FZ1500R33HL3 FZ1200R33KF2C FZ1500R33HE3 FZ1200R33KF2C igbt 3.3kv planar busbar design HIGH VOLTAGE DIODE 3.3kv FZ1500R33HL3 the calculation of the power dissipation for the IGBT i300a IGBT FZ1200 BUSBAR calculation

    press-pack igbt

    Abstract: statcom igbt 3.3kv Discrete IGBTS IGBT 5kV IGBT presspack D-68623 westcode igbt
    Text: NEW PRODUCT BRIEF ! w e N Engineered Press-Pack IGBT Stack Solutions May 2010 Issue 1 Let us help you take the next steps in Megawatt drives Voltage Ratings of 3.3kV to 6.6kV 2L, 3L, NPC and Multi-cell configurations 2 to 20 MW To see our full range of 2.5kV and 4.5kV


    Original     		PDF D-68623 press-pack igbt statcom igbt 3.3kv Discrete IGBTS IGBT 5kV IGBT presspack westcode igbt

    6.5kV IGBT

    Abstract: IGBT Power Module siemens ag infineon igbt reliability siemens IGBT 600a eupec igbt 6500v igbt 6.5kv SiC IGBT High Power Modules, PCIM Hongkong Measurement of stray inductance for IGBT IGBT module FZ siemens igbt inverters
    Text: 6.5kV IGBT-Modules Franz Auerbach Infineon Technologies Josef Georg Bauer (Siemens AG) Manfred Glantschnig (Infineon Technologies) Jürgen Göttert (eupec GmbH & Co KG) Martin Hierholzer (eupec GmbH & Co KG) Alfred Porst (Infineon Technologies) Daniel Reznik (Siemens AG)


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    igbt spice model

    Abstract: MOSFET IGBT THEORY AND APPLICATIONS shockley diode application GTO thyristor Curve properties HIGH VOLTAGE 3.3kv mosfet IGBT THEORY AND APPLICATIONS calculation of IGBT snubber shockley diode spice shockley diode SIEMENS THYRISTOR
    Text: Power Semiconductor Application Note AN_PSM2e IEEE Industry Applications Society Annual Meeting New Orleans, Louisiana, October 5-9, 1997 Parameter Extraction Methodology and Validation for an Electro-Thermal Physics-Based NPT IGBT Model J. Sigg, P. Türkes, R. Kraus*


    Original     		PDF D-81739 D-85577 29July igbt spice model MOSFET IGBT THEORY AND APPLICATIONS shockley diode application GTO thyristor Curve properties HIGH VOLTAGE 3.3kv mosfet IGBT THEORY AND APPLICATIONS calculation of IGBT snubber shockley diode spice shockley diode SIEMENS THYRISTOR

    step down chopper

    Abstract: igbt 6.5 kv snubber step down chopper using igbt APPLICATIONS OF dc chopper circuit dc to dc chopper using igbt dc to dc chopper by thyristor IGBT 3kv 6.5kV IGBT david rheostatic braking
    Text: HIGH VOLTAGE IGBT MODULES IN THE DESIGN OF A 3KV CHOPPER Alexis Colasse, Jean-Emmanuel Masselus, David Zorzynski ALSTOM BELGIUM sector TRANSPORT 50-52, rue Cambier Dupret 6000 CHARLEROI, BELGIUM tel. : +32 71 44 54 53, fax : +32 71 44 57 72 david.zorzynski@transport.alstom.com


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    6.5kV IGBT

    Abstract: 6.5kV IGBT loss igbt 6.5kv igbt3 igbt2 infineon L280N A-9500 igbt2 infineon infineon igbt3 ohm HIGH VOLTAGE DIODE 3.3kv 3.3kv diode
    Text: 6.5kV IGBT and FWD with Trench and VLD Technology for reduced Losses and high dynamic Ruggedness 1 2) 2) 3) 3) Thomas Duetemeyer , Josef-Georg Bauer , Elmar Falck , Carsten Schaeffer , G. Schmidt , 1) Burkhard Stemmer , 1 Infineon Technologies AG, Max-Planck-Straße 5, D-59581 Warstein Germany


    Original     		PDF D-59581 D-85579 6.5kV IGBT 6.5kV IGBT loss igbt 6.5kv igbt3 igbt2 infineon L280N A-9500 igbt2 infineon infineon igbt3 ohm HIGH VOLTAGE DIODE 3.3kv 3.3kv diode

    failure analysis IGBT

    Abstract: AN2001-05 use of igbt in power system IGBT JUNCTION TEMPERATURE CALCULATION calculation of the major IGBT operating 3.3kv diode AN2008-03 Thermal model igbt
    Text: Application Note, V1.0, 2008 AN2008-03 Thermal equivalent circuit models replaces AN2001-05 Industrial Power Edition 2008-06-16 Published by Infineon Technologies AG 59568 Warstein, Germany Infineon Technologies AG 2008. All Rights Reserved. LEGAL DISCLAIMER


    Original     		PDF AN2008-03 AN2001-05 failure analysis IGBT AN2001-05 use of igbt in power system IGBT JUNCTION TEMPERATURE CALCULATION calculation of the major IGBT operating 3.3kv diode AN2008-03 Thermal model igbt

    calculation of IGBT snubber

    Abstract: abb press-pack igbt IEGT press-pack igbt IEGT presspack McMurray 6.5kV IGBT GTO 4.5kv press-pack iegt IGBT 3.3KV ABB
    Text: New family of 4.5kV press-pack IGBTs. Positive development in power electronics New family of 4.5kV Press-pack IGBTs F. Wakeman, G. Li, A. Golland Westcode Semiconductors Ltd, Langley Park, Chippenham, SN15 1GE, UK Tel: +44 0 1249 441122, e-mail: frank.wakeman@westcode.com


    Original     		PDF EPE99, T0900TA52E calculation of IGBT snubber abb press-pack igbt IEGT press-pack igbt IEGT presspack McMurray 6.5kV IGBT GTO 4.5kv press-pack iegt IGBT 3.3KV ABB

    FS300R12OE4P

    Abstract: FS450R12OE4P FP06R12W1T4 F3L400R12PT4 bt 1690 scr fp150r07n3e4 F3L300R12PT4 Eupec thyristors catalog FF150R12RT4 Dz800S17ke3
    Text: Short Form Catalog 2012 High Power Semiconductors for Industrial Applications www.infineon.com/highpower Auch mit dem KuKa Kurzkatalog 2012 bieten wir Ihnen wieder einen Überblick über dieses Spektrum mit vielen Details. Durch ständigen Dialog mit unseren Kunden haben wir auch in


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    aei thyristors

    Abstract: aei thyristors gec igbt firing circuit for single phase induction motor Electric Welding Machine thyristor renault 20kV thyristor soft switching techniques IN INDUCTION HEATING IN "bi-directional switches" IGBT bi-directional switches IGBT igbt welding machine scheme
    Text: Power Electronic Assembly Products Electro/Mechanical Thermal Components Traction Refurbishment ? ? Standard Power Assemblies New Product Design & Development RECTIFIERS, PULSED POWER, INVERTERS, AC SWITCHES, STACKS An ISO 9001: 2000 ISO 14001 Company 45 years in Power Electronics Assembly


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    HIGH VOLTAGE DIODE 3.3kv

    Abstract: 3.3kv diode FZ1200R33KF2C EUPEC T 503 junction termination extension igbt 3 KA 3.3kv emcon diode diode current 1200A FZ1200r igbt 3.3kv
    Text: New 3300V High Power Emcon-HDR Diode with High Dynamic Robustness J. Biermann1 , K.-H. Hoppe1), O. Schilling1), J.G. Bauer2), A. Mauder2), E. Falck2), H.-J. Schulze2), H. Rüthing2), G. Achatz3) 1 2 eupec GmbH, Max-Planck-Straße, D-59581 Warstein, Germany


    Original     		PDF D-59581 D-81541 HIGH VOLTAGE DIODE 3.3kv 3.3kv diode FZ1200R33KF2C EUPEC T 503 junction termination extension igbt 3 KA 3.3kv emcon diode diode current 1200A FZ1200r igbt 3.3kv

    FZ1200R33KF2C

    Abstract: igbt eupec eupec igbt 3.3kv 3.3kv diode FZ1200R33KF2 Emcon igbt 3.3kv FZ1200r
    Text: MARKETING NEWS Date:2003-03-07 Page 1 of 2 MN-Number: MN2003-03 Introduction of the new 3.3kV EmCon-HDR Diode Due to new perceptions of eupec and Infineon in simulation and design, the lateral device structure of 3.3kV diodes could be improved. Thus we are able to expand the safe operation area SOA of the 3.3kV


    Original     		PDF MN2003-03 FZ1200R33KF2 FZ1200R33KF2C FZ1200R33KF2C D-59581 igbt eupec eupec igbt 3.3kv 3.3kv diode FZ1200R33KF2 Emcon igbt 3.3kv FZ1200r

    eupec igbt 3300v

    Abstract: Eupec Power Semiconductors EUPEC DIODE Eupec igbt eupec 2902 eupec igbt driver eupec module igbt emcon diode 3.3kv diode
    Text: Press Release – May 2003 PCIM 2003 eupec is introducing its new 3300V High Power Emcon-HDR Diode with High Dynamic Robustness eupec’s second generation 3300V High Power Module family is now being offered with a new diode and the new name KF2C, featuring a SOA which is increased by the factor of two.


    Original     		PDF D-59581 eupec igbt 3300v Eupec Power Semiconductors EUPEC DIODE Eupec igbt eupec 2902 eupec igbt driver eupec module igbt emcon diode 3.3kv diode

    DV0P197

    Abstract: DV0P1972 japan servo KH 56 lm
    Text: 10 0100 1000100 10 0100 1000100 10 0100 1000100 10 0100 10 0100 1000100 10 0100 1000100 10 0100 1000100 10 0100 10 0100 1000100 10 0100 1000100 10 0100 1000100 10 0100 10 0100 1000100 10 0100 1000100 10 0100 1000100 10 0100 10 0100 1000100 10 0100 1000100 10 0100 1000100 10 01


    Original     		PDF MUMA022P44N MUMA042P1S MUMA042P1T MUMA042P31N MUMA042P32N MUMA042P34N MUMA042P41N MUMA042P42N MUMA042P44N DV0P197 DV0P1972 japan servo KH 56 lm

    panasonic minas

    Abstract: JL04HV-2E22-22PE Service manual Servo Driver Panasonic
    Text: 10 0100 1000100 10 0100 1000100 10 0100 1000100 10 0100 10 0100 1000100 10 0100 1000100 10 0100 1000100 10 0100 10 0100 1000100 10 0100 1000100 10 0100 1000100 10 0100 10 0100 1000100 10 0100 1000100 10 0100 1000100 10 0100 10 0100 1000100 10 0100 1000100 10 0100 1000100 10 01


    Original     		PDF ISO14001 ISO14001 ISO9001 ISO9001 panasonic minas JL04HV-2E22-22PE Service manual Servo Driver Panasonic

    service manual servo mbdht2510e

    Abstract: MBDHT2510 MANUAL msm 8255 MDDHT5540E MBDHT2510 CODE ERROR MBDHT2510E MBDHT2510 MDDHT5540 MADHT1507 MEDHT7364
    Text: AC Servo MINAS A5 series High performance, multi function and easy use, all advanced. Easy Safe k Quic rt Sma t Ligh  2009/10 Catalog Contents A small step for axis. Large step ahead for system motion. Features. 2


    Original     		PDF e/25000/motor ISO14001 ISO14001 ISO9001 ISO9001 service manual servo mbdht2510e MBDHT2510 MANUAL msm 8255 MDDHT5540E MBDHT2510 CODE ERROR MBDHT2510E MBDHT2510 MDDHT5540 MADHT1507 MEDHT7364