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    IGBT 100V Search Results

    IGBT 100V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    IGBT 100V Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    4mbi400vg

    Abstract: 4MBI400VG-060R-50 4mbi400vg060r50 4mbi400vg-060
    Text: / 4MBI400VG-060R-50 IGBT Modules IGBT MODULE V series 600V / 400A / IGBT, RB-IGBT 4 in one package Features Higher Efficiency Optimized A (T-type) -3 level circuit Low inductance module structure Featuring Reverse Blocking IGBT (RB-IGBT)


    Original     		4MBI400VG-060R-50 4mbi400vg 4MBI400VG-060R-50 4mbi400vg060r50 4mbi400vg-060 PDF

    4MBI300VG-120R-50

    Abstract: 4MBI300VG120 4MBI300 chip Express t2 4mbi300vg 4MBI300VG-120 igbt 600V 300A
    Text: / 4MBI300VG-120R-50 IGBT Modules IGBT MODULE V series 1200V / 300A / IGBT, 600V/300A/RB-IGBT, 4 in one package Features Higher Efficiency Optimized A (T-type) -3 level circuit Low inductance module structure


    Original     		4MBI300VG-120R-50 4MBI300VG-120R-50 4MBI300VG120 4MBI300 chip Express t2 4mbi300vg 4MBI300VG-120 igbt 600V 300A PDF

    200n60

    Abstract: 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120
    Text: HiPerFASTTM IGBT G-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE(sat) 600 1000 TO-220 TO-263 TO-247 IC VCE(sat) (IXGP) (IXGA) (IXGH) max TC = 25 °C TC=25 °C A V 40 56 60 40


    Original     		PLUS247 20N30 28N30 30N30 40N30 31N60 38N60 41N60 60N60 O-264 200n60 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120 PDF

    calculation of IGBT snubber

    Abstract: darlington pair MODULE 200A RC VOLTAGE CLAMP snubber circuit ipm darlington RCD snubber mitsubishi semiconductors power modules mos IGBT snubber mitsubishi semiconductors inverter power modules CM100DY-24H inverter circuit using IGBT module
    Text: MITSUBISHI SEMICONDUCTORS POWER MODULES MOS GENERAL CONSIDERATIONS FOR IGBT AND INTELLIGENT POWER MODULES 3.0 General Considerations for IGBT and Intelligent Power Modules H-Series IGBT and Intelligent Power Modules are based on advanced third generation IGBT and free-wheel


    Original     		00V/100A calculation of IGBT snubber darlington pair MODULE 200A RC VOLTAGE CLAMP snubber circuit ipm darlington RCD snubber mitsubishi semiconductors power modules mos IGBT snubber mitsubishi semiconductors inverter power modules CM100DY-24H inverter circuit using IGBT module PDF

    MITSUBISHI CM400

    Abstract: MITSUBISHI CM300 H BRIDGE inverters circuit diagram using igbt NPN/transistor NEC K 2500 HALF BRIDGE NPN DARLINGTON POWER MODULE ups circuit diagram using igbt IGBT h-series application note CM30 igbt CM400 MITSUBISHI cm50-24h
    Text: MITSUBISHI SEMICONDUCTORS POWER MODULES MOS USING IGBT MODULES 4.0 Using IGBT Modules 4.1 Structure and Operation of IGBT Module Mitsubishi IGBT modules are designed to be rugged, low loss and easy to use. Use of advanced processing technologies gives low


    Original     		20kHz MITSUBISHI CM400 MITSUBISHI CM300 H BRIDGE inverters circuit diagram using igbt NPN/transistor NEC K 2500 HALF BRIDGE NPN DARLINGTON POWER MODULE ups circuit diagram using igbt IGBT h-series application note CM30 igbt CM400 MITSUBISHI cm50-24h PDF

    MA110

    Abstract: topologies pulse transformer driver IGBT APPLICATION igbt with pulse transformer driver igbt driver circuit diagram cut off voltage edfa rise time specifications FS450R12KE3 ma110 eupec eupec igbt pwm igbt dc-dc converter bi-directional switch IGBT driver
    Text: eupec IGBT EiceDRIVER IGBT Driver for medium and high power IGBT Modules Michael Hornkamp eupec GmbH Max-Planck-Straße 5 D-59581 Warstein/ Germany www.eupec.com Abstract While considering technical high-quality IGBT drive circuits, a team worked out the basic


    Original     		D-59581 2ED30C17. 0V/15mA MA110 FF600R17KF6B2 topologies pulse transformer driver IGBT APPLICATION igbt with pulse transformer driver igbt driver circuit diagram cut off voltage edfa rise time specifications FS450R12KE3 ma110 eupec eupec igbt pwm igbt dc-dc converter bi-directional switch IGBT driver PDF

    eupec igbt

    Abstract: MA110 2ED30C17 ECONOPACK IGBT EUPEC eupec igbt driver sixpack eupec igbt Eupec Power Semiconductors pwm igbt dc-dc converter FF600R17KF6B2
    Text: eupec IGBT EiceDRIVER IGBT Driver for medium and high power IGBT Modules Michael Hornkamp eupec GmbH Max-Planck-Straße 5 D-59581 Warstein/ Germany www.eupec.com Abstract While considering technical high-quality IGBT drive circuits, a team worked out the basic


    Original     		D-59581 2ED30C17. 0V/15mA MA110 FF600R17KF6B2 eupec igbt 2ED30C17 ECONOPACK IGBT EUPEC eupec igbt driver sixpack eupec igbt Eupec Power Semiconductors pwm igbt dc-dc converter FF600R17KF6B2 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 95239 IRG4PH40UD2-EP UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • UltraFast IGBT optimized for high operating frequencies up to 200kHz in resonant mode • IGBT co-packaged with HEXFREDTM ultrafast


    Original     		IRG4PH40UD2-EP 200kHz O-247AD PDF

    ST T4 3660

    Abstract: 035H IRFPE30 IRG4PH40UD2-E induction cooking ge 6220 induction cooking circuits
    Text: PD - 96781 IRG4PH40UD2-E UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • UltraFast IGBT optimized for high operating frequencies up to 200kHz in resonant mode • IGBT co-packaged with HEXFREDTM ultrafast


    Original     		IRG4PH40UD2-E 200kHz O-247AD ST T4 3660 035H IRFPE30 IRG4PH40UD2-E induction cooking ge 6220 induction cooking circuits PDF

    IRG4PH40UD2-EP

    Abstract: 035H IRGP30B120KD-E
    Text: PD - 95239 IRG4PH40UD2-EP UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • UltraFast IGBT optimized for high operating frequencies up to 200kHz in resonant mode • IGBT co-packaged with HEXFREDTM ultrafast


    Original     		IRG4PH40UD2-EP 200kHz O-247AD IRG4PH40UD2-EP 035H IRGP30B120KD-E PDF

    induction cooking

    Abstract: 035H IRG4PH40UD2-EP IRGP30B120KD-E TO247AD package
    Text: PD - 95239 IRG4PH40UD2-EP UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • UltraFast IGBT optimized for high operating frequencies up to 200kHz in resonant mode • IGBT co-packaged with HEXFREDTM ultrafast


    Original     		IRG4PH40UD2-EP 200kHz O-247AD induction cooking 035H IRG4PH40UD2-EP IRGP30B120KD-E TO247AD package PDF

    IGBT 48V 200A

    Abstract: No abstract text available
    Text: SPM6G50-60 SENSITRON SEMICONDUCTOR TECHNICAL DATA Custom Power Hybrid Three-Phase IGBT BRIDGE, 600 VOLT, 50 AMP ELECTRICAL CHARACTERISTICS PER IGBT DEVICE Tj=250C UNLESS OTHERWISE SPECIFIED PARAMETER SYMBOL MI N TYP MAX UNIT IGBT SPECIFICATIONS Collector to Emitter Breakdown Voltage


    Original     		SPM6G50-60 /-20V 125oC IGBT 48V 200A PDF

    Sensitron Semiconductor

    Abstract: 210C DS34C87 SFH6186-4 SPM6G060-120D SPM6G060-120D-B
    Text: SENSITRON SEMICONDUCTOR SPM6G060-120D TECHNICAL DATA DATASHEET 4165, Rev. C.3 Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 1200 VOLT, 60 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE


    Original     		SPM6G060-120D Sensitron Semiconductor 210C DS34C87 SFH6186-4 SPM6G060-120D SPM6G060-120D-B PDF

    calculation of IGBT snubber

    Abstract: silicon thermal grease single phase igbt based inverter 200 amps circuit CM100DY-24H darlington pair MODULE 200A powerex snubber capacitor IGBT snubber shinetsu G746 PM600HSA120 IGBT JUNCTION TEMPERATURE CALCULATION
    Text: Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 3.0 General Considerations for IGBT and Intelligent Power Modules Powerex IGBT and Intelligent Power Modules are based on advanced low loss IGBT and free-wheel diode technologies. The general


    Original     		00V/100A calculation of IGBT snubber silicon thermal grease single phase igbt based inverter 200 amps circuit CM100DY-24H darlington pair MODULE 200A powerex snubber capacitor IGBT snubber shinetsu G746 PM600HSA120 IGBT JUNCTION TEMPERATURE CALCULATION PDF

    Untitled

    Abstract: No abstract text available
    Text: GA200TS60UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 200 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high operating frequencies 8 to 40 kHz in hard switching, > 200 kHz in resonant mode


    Original     		GA200TS60UPbF 12-Mar-07 PDF

    J 325

    Abstract: R33C
    Text: Bulletin I27143 Rev.B 07/03 25MT060WF "FULL-BRIDGE" IGBT MTP Warp Speed IGBT Features • Gen. 4 Warp Speed IGBT Technology • HEXFRED TM Antiparallel Diodes with UltraSoft Reverse Recovery • Very Low Conduction and Switching Losses • Optional SMT Thermistor


    Original     		I27143 25MT060WF E78996 18-Jul-08 J 325 R33C PDF

    Untitled

    Abstract: No abstract text available
    Text: Bulletin I27143 Rev.B 07/03 25MT060WF "FULL-BRIDGE" IGBT MTP Warp Speed IGBT Features • Gen. 4 Warp Speed IGBT Technology • HEXFRED TM Antiparallel Diodes with UltraSoft Reverse Recovery • Very Low Conduction and Switching Losses • Optional SMT Thermistor


    Original     		I27143 25MT060WF E78996 08-Mar-07 PDF

    mosfet 10a 600v

    Abstract: D-12 IRGBC20S rectifier IGBT IRGBC20S IGBT
    Text: IGBT Designer’s Manual Data Sheets The IGBT devices listed in this Designer’s Manual represent International Rectifier’s IGBT line as of August, 1994. The data presented in this manual supersedes all previous specifications. C-2 PD - 9.687A IRGBC20S


    Original     		IRGBC20S O-220AB mosfet 10a 600v D-12 IRGBC20S rectifier IGBT IRGBC20S IGBT PDF

    IC53A

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SPM6G060-120D TECHNICAL DATA DATASHEET 4165, Rev. C.2 Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 1200 VOLT, 60 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE


    Original     		SPM6G060-120D IC53A PDF

    IGBT 500V 35A

    Abstract: power supply switching 24-2 OPTO ISOLATOR high temperature 210C DS34C87 SFH6186-4 SPM6G060-120D 10000Watt
    Text: SENSITRON SEMICONDUCTOR SPM6G060-120D TECHNICAL DATA DATASHEET 4165, Rev. C.2 Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 1200 VOLT, 60 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE


    Original     		SPM6G060-120D IGBT 500V 35A power supply switching 24-2 OPTO ISOLATOR high temperature 210C DS34C87 SFH6186-4 SPM6G060-120D 10000Watt PDF

    5000watt

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SPM6G060-120D TECHNICAL DATA DATASHEET 4165, Rev. D Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 1200 VOLT, 60 AMP, THREE PHASE IGBT BRIDGE Tj=25 C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE


    Original     		SPM6G060-120D 5000watt PDF

    Untitled

    Abstract: No abstract text available
    Text: GA200TS60UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 200 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high operating frequencies 8 to 40 kHz in hard switching, > 200 kHz in resonant mode


    Original     		GA200TS60UPbF 12-Mar-07 PDF

    SHDG1023

    Abstract: SHDG1024 SHDG1025 SHDG1026 SHDG1027 SHDG1028 NS535
    Text: SENSITRON SEMICONDUCTOR 2000 CATALOG HERMETIC IGBT DEVICES WITH A FAST REVERSE RECOVERY DIODE Continued HIGH SPEED IMPROVED SCSOA IGBT DEVICES WITH A FAST REVERSE RECOVERY DIODE IGBT CHARACTERISTICS V ceS PART NUMBER CONTINUOUS COLLECTOR CURRENT lc @ Tc=90°C


    OCR Scan     		SHDG1023 SHDG1024 SHDG1025 O-254 O-258 SHDG1027 SHDG1028 SHDG1026 SHDG1028 SHDG1025 NS535 PDF

    A/smd diode t53

    Abstract: No abstract text available
    Text: PD -9.1668A International I R Rectifier IRG4ZC70UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Surface Mountable UltraFast CoPack IGBT • UltraFast IGBT optimized for high switching frequencies • IGBT co-packaged with HEXFREDa ultrafast,


    OCR Scan     		IRG4ZC70UD SMD-10 A/smd diode t53 PDF