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Catalog Datasheet	MFG & Type	PDF	Document Tags
ifu320 Abstract: IFR321 ifr320 IRFR322 IFU321 IRFU322 IRFR320 IRFR321 IFR322 irfu320 Text: IRFR320, IRFR321, IRFR322, IRFU320, IRFU321, IRFU322 S E M I C O N D U C T O R 2.6A and 3.1A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 2.6A and 3.1A, 350V and 400V These are N-Channel enhancement mode silicon gate	Original	PDF	IRFR320, IRFR321, IRFR322, IRFU320, IRFU321, IRFU322 TA17404. ifu320 IFR321 ifr320 IRFR322 IFU321 IRFU322 IRFR320 IRFR321 IFR322 irfu320
ifu320 Abstract: IFR321 ifr320 IRFU320 Text: IRFR320, IRFR321, IRFR322, IRFU320, IRFU321, IRFU322 H A R R IS SEMICONDUCTOR 2.6A and 3.1 A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 2.6A and 3.1 A, 350V and 400V These are N-Channel enhancement mode silicon gate	OCR Scan	PDF	IRFR320, IRFR321, IRFR322, IRFU320, IRFU321, IRFU322 ifu320 IFR321 ifr320 IRFU320
Untitled Abstract: No abstract text available Text: P *3 3 S IRFR320, IRFR321, IRFR322, IRFU320, IRFU321, IRFU322 2.6A and 3.1 A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs juiy 1998 Features Description • 2.6A and 3.1 A, 350V and 400V • High Input Impedance These are N-Channel enhancement mode silicon gate	OCR Scan	PDF	IRFR320, IRFR321, IRFR322, IRFU320, IRFU321, IRFU322 RFR322,
ifu320 Abstract: fu320 IFR321 fr320 Text: IRFR320/321/322 IRFU320/321/322 HARRIS N-Channel Power MOSFETs Avalanche-Energy-Rated A u g u st 1991 Packages Features IR F U 3 2 0 /3 2 1 /3 2 2 T O -2 5 1 A A TOP VIEW • 2.6A and 3.1A, 350V and 400V • rDS on = 1 .8 0 fl and 2.5CI > SOURCE • Single Pulse Avalanche Energy Rated	OCR Scan	PDF	IRFR320/321/322 IRFU320/321/322 IRFR320, IRFR321, IRFR322, IRFU320, IRFU321 IRFU322 ifu320 fu320 IFR321 fr320