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    IDSS SEMICONDUCTORS Search Results

    IDSS SEMICONDUCTORS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    IDSS SEMICONDUCTORS Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    NEZ3642-15D

    Abstract: NEZ3642-15DL NEZ3642-4D NEZ3642-4DL NEZ3642-8D NEZ3642-8DL
    Text: NEZ3642-15D NEZ3642-15DL NEZ3642-8D NEZ3642-8DL NEZ3642-4D NEZ3642-4DL C-BAND INTERNALLY MATCHED POWER GaAs MESFET FEATURES • • • • ELECTRICAL CHARACTERISTICS TC PART NUMBER P1DB ηADD IDS GL IM3 -X DL Option Only IDSS VP BVDGO gm RTH(CH-C CHARACTERISTICS


    Original     		NEZ3642-15D NEZ3642-15DL NEZ3642-8D NEZ3642-8DL NEZ3642-4D NEZ3642-4DL NEZ3642-15D NEZ3642-15DL NEZ3642-4D NEZ3642-4DL NEZ3642-8D NEZ3642-8DL PDF

    Untitled

    Abstract: No abstract text available
    Text: NEZ3642-15D NEZ3642-15DL NEZ3642-8D NEZ3642-8DL NEZ3642-4D NEZ3642-4DL C-BAND INTERNALLY MATCHED POWER GaAs MESFET FEATURES • • • • ELECTRICAL CHARACTERISTICS TC PART NUMBER P1DB ηADD IDS GL IM3 -X DL Option Only IDSS VP BVDGO gm RTH(CH-C CHARACTERISTICS


    Original     		NEZ3642-15D NEZ3642-8D NEZ3642-4D -15DL NEZ3642-4DL NEZ3642-8DL NEZ3642-15DL PDF

    NEZ3642-8DL

    Abstract: NEZ3642-15D NEZ3642-15DL NEZ3642-4D NEZ3642-4DL NEZ3642-8D
    Text: NEZ3642-15D NEZ3642-15DL NEZ3642-8D NEZ3642-8DL NEZ3642-4D NEZ3642-4DL C-BAND INTERNALLY MATCHED POWER GaAs MESFET FEATURES • • • • ELECTRICAL CHARACTERISTICS TC PART NUMBER P1DB ηADD IDS GL IM3 -X DL Option Only IDSS VP BVDGO gm RTH(CH-C CHARACTERISTICS


    Original     		NEZ3642-15D NEZ3642-15DL NEZ3642-8D NEZ3642-8DL NEZ3642-4D NEZ3642-4DL 24-Hour NEZ3642-8DL NEZ3642-15D NEZ3642-15DL NEZ3642-4D NEZ3642-4DL NEZ3642-8D PDF

    ADE-208-1377

    Abstract: H5N2508DSTL-E dpak code H5N2508DL H5N2508DS PRSS0004ZD-B PRSS0004ZD-C
    Text: H5N2508DL, H5N2508DS Silicon N Channel MOS FET High Speed Power Switching REJ03G1108-0200 Previous: ADE-208-1377 Rev.2.00 Sep 07, 2005 Features • • • • • Low on-resistance: R DS (on) = 0.48 Ω typ. Low leakage current: IDSS = 1 µA max (at VDS = 250 V)


    Original     		H5N2508DL, H5N2508DS REJ03G1108-0200 ADE-208-1377) PRSS0004ZD-B PRSS0004ZD-C ADE-208-1377 H5N2508DSTL-E dpak code H5N2508DL H5N2508DS PRSS0004ZD-B PRSS0004ZD-C PDF

    NEZ4450-15D

    Abstract: NEZ4450-4D NEZ4450-4DL NEZ4450-8D
    Text: NEZ4450-15D NEZ4450-15DL NEZ4450-8D NEZ4450-8DL NEZ4450-4D NEZ4450-4DL C-BAND INTERNALLY MATCHED POWER GaAs MESFET FEATURES • • • • • ELECTRICAL CHARACTERISTICS TC PART NUMBER P1DB ηADD IDS GL IM3 -XDL Option Only IDSS VP BVDGO gm RTH (CH-C ∆T (CH-C)


    Original     		NEZ4450-15D NEZ4450-15DL NEZ4450-8D NEZ4450-8DL NEZ4450-4D NEZ4450-4DL 24-Hour NEZ4450-15D NEZ4450-4D NEZ4450-4DL NEZ4450-8D PDF

    H5N2004DSTL-E

    Abstract: H5N2004DL H5N2004DL-E H5N2004DS PRSS0004ZD-B PRSS0004ZD-C
    Text: H5N2004DL, H5N2004DS Silicon N Channel MOS FET High Speed Power Switching REJ03G1103-0200 Previous: ADE-208-1372 Rev.2.00 Sep 07, 2005 Features • • • • • Low on-resistance: R DS (on) = 0.38 Ω typ. Low leakage current: IDSS = 1 µA max (at VDS = 200 V)


    Original     		H5N2004DL, H5N2004DS REJ03G1103-0200 ADE-208-1372) PRSS0004ZD-B PRSS0004ZD-C H5N2004DSTL-E H5N2004DL H5N2004DL-E H5N2004DS PRSS0004ZD-B PRSS0004ZD-C PDF

    499G

    Abstract: NEZ4450-15D NEZ4450-4D NEZ4450-4DL NEZ4450-8D
    Text: NEZ4450-15D NEZ4450-15DL NEZ4450-8D NEZ4450-8DL NEZ4450-4D NEZ4450-4DL C-BAND INTERNALLY MATCHED POWER GaAs MESFET FEATURES • • • • • ELECTRICAL CHARACTERISTICS TC PART NUMBER P1DB ηADD IDS GL IM3 -XDL Option Only IDSS VP BVDGO gm RTH (CH-C ∆T (CH-C)


    Original     		NEZ4450-15D NEZ4450-15DL NEZ4450-8D NEZ4450-8DL NEZ4450-4D NEZ4450-4DL 24-Hour 499G NEZ4450-15D NEZ4450-4D NEZ4450-4DL NEZ4450-8D PDF

    H5N5004PL

    Abstract: H5N5004PL-E PRSS0004ZF-A
    Text: H5N5004PL Silicon N Channel MOS FET High Speed Power Switching REJ03G1113-0200 Previous: ADE-208-1381 Rev.2.00 Sep 07, 2005 Features • • • • • • Low on-resistance: R DS (on) = 0.09 Ω typ. Low leakage current: IDSS = 10 µA max (at VDS = 500 V)


    Original     		H5N5004PL REJ03G1113-0200 ADE-208-1381) PRSS0004ZF-A H5N5004PL H5N5004PL-E PRSS0004ZF-A PDF

    H5N2509P

    Abstract: H5N2509P-E PRSS0004ZE-A SC-65
    Text: H5N2509P Silicon N Channel MOS FET High Speed Power Switching REJ03G1109-0200 Previous: ADE-208-1378 Rev.2.00 Sep 07, 2005 Features • • • • • Low on-resistance: R DS (on) = 0.053 Ω typ. Low leakage current: IDSS = 1 µA max (at VDS = 250 V, VGS = 0 V)


    Original     		H5N2509P REJ03G1109-0200 ADE-208-1378) PRSS0004ZE-A H5N2509P H5N2509P-E PRSS0004ZE-A SC-65 PDF

    2N3819 equivalent

    Abstract: TEMIC 2N3819 transistor 2N3819 2N3819 2n4416 jfet Siliconix JFET Siliconix N-Channel JFET equivalent for 2N3819 2N4416 Siliconix Siliconix
    Text: 2N3819 Siliconix N-Channel JFET PRODUCT SUMMARY VGS off (V) V(BR)GSS MIN (V) gfs MIN (MS) IDSS MIN (MA) v –8 –25 2 2 FEATURES BENEFITS APPLICATIONS D Excellent High-Frequency Gain: Gps 11 dB @ 400 MHz D Very Low Noise: 3 dB @ 400 MHz D Very Low Distortion


    Original     		2N3819 2N3819 S-52424--Rev. 14-Apr-97 2N3819 equivalent TEMIC 2N3819 transistor 2N3819 2n4416 jfet Siliconix JFET Siliconix N-Channel JFET equivalent for 2N3819 2N4416 Siliconix Siliconix PDF

    dpak code

    Abstract: H5N5006DL H5N5006DS H5N5006DSTL-E PRSS0004ZD-B PRSS0004ZD-C
    Text: H5N5006DL, H5N5006DS Silicon N Channel MOS FET High Speed Power Switching REJ03G0397-0100 Rev.1.00 May 30, 2006 Features • • • • • Low on-resistance: RDS on = 2.5 Ω typ. Low leakage current: IDSS = 1 µA max. (at VDS = 500 V) High speed switching: tf = 15 ns typ. (at VGS = 10 V, VDD ≅ 250 V, ID = 1.5 A)


    Original     		H5N5006DL, H5N5006DS REJ03G0397-0100 PRSS0004ZD-B PRSS0004ZD-C dpak code H5N5006DL H5N5006DS H5N5006DSTL-E PRSS0004ZD-B PRSS0004ZD-C PDF

    H5N5005PL

    Abstract: PRSS0004ZF-A Renesas h5n5005pl
    Text: H5N5005PL Silicon N Channel MOS FET High Speed Power Switching REJ03G0419-0300 Rev.3.00 May 25, 2006 Features • • • • • • Low on-resistance: RDS on = 0.070 Ω typ. Low leakage current: IDSS = 10 µA max (at VDS = 500 V) High speed switching: tf = 300 ns typ (at VGS = 10 V, ID = 30 A, RL = 8.33 Ω)


    Original     		H5N5005PL REJ03G0419-0300 PRSS0004ZF-A H5N5005PL PRSS0004ZF-A Renesas h5n5005pl PDF

    2SK3234

    Abstract: PRSS0003AE-A
    Text: 2SK3234 Silicon N Channel MOS FET High Speed Power Switching REJ03G1097-0200 Previous: ADE-208-1370 Rev.2.00 Sep 07, 2005 Features • • • • • Low on-resistance: RDS (on) = 0.65 Ω typ. Low leakage current: IDSS = 1 µA max (at VDS = 500 V) High speed switching: tf = 25 ns typ (at VGS = 10 V, VDD = 250 V, ID = 4 A)


    Original     		2SK3234 REJ03G1097-0200 ADE-208-1370) PRSS0003AE-A O-220C 2SK3234 PRSS0003AE-A PDF

    Untitled

    Abstract: No abstract text available
    Text: H5N5001FM Silicon N Channel MOS FET High Speed Power Switching REJ03G1112-0200 Previous: ADE-208-1380 Rev.2.00 Sep 07, 2005 Features • • • • • Low on-resistance: R DS (on) =1.1 Ω typ. Low leakage current: IDSS =1 µA max (at VDS = 500 V) High speed switching: tf = 15ns typ (at VGS = 10 V, VDD = 250 V, ID = 2.5 A)


    Original     		H5N5001FM REJ03G1112-0200 ADE-208-1380) PRSS0003AD-A O-220FM) PDF

    2SK3233

    Abstract: PRSS0003AE-A 2SK3233-E
    Text: 2SK3233 Silicon N Channel MOS FET High Speed Power Switching REJ03G1096-0200 Previous: ADE-208-1369 Rev.2.00 Sep 07, 2005 Features • • • • • Low on-resistance: RDS (on) = 1.1 Ω typ. Low leakage current: IDSS = 1 µA max (at VDS = 500 V) High speed switching: tf = 15 ns typ (at VGS = 10 V, VDD = 250 V, ID = 2.5 A)


    Original     		2SK3233 REJ03G1096-0200 ADE-208-1369) PRSS0003AE-A O-220C 2SK3233 PRSS0003AE-A 2SK3233-E PDF

    2SK3234

    Abstract: No abstract text available
    Text: 2SK3234 Silicon N Channel MOS FET High Speed Power Switching REJ03G1097-0200 Previous: ADE-208-1370 Rev.2.00 Sep 07, 2005 Features • • • • • Low on-resistance: RDS (on) = 0.65 Ω typ. Low leakage current: IDSS = 1 µA max (at VDS = 500 V) High speed switching: tf = 25 ns typ (at VGS = 10 V, VDD = 250 V, ID = 4 A)


    Original     		2SK3234 REJ03G1097-0200 ADE-208-1370) PRSS0003AE-A O-220C 2SK3234 PDF

    H5N5001FM

    Abstract: PRSS0003AD-A
    Text: H5N5001FM Silicon N Channel MOS FET High Speed Power Switching REJ03G1112-0200 Previous: ADE-208-1380 Rev.2.00 Sep 07, 2005 Features • • • • • Low on-resistance: R DS (on) =1.1 Ω typ. Low leakage current: IDSS =1 µA max (at VDS = 500 V) High speed switching: tf = 15ns typ (at VGS = 10 V, VDD = 250 V, ID = 2.5 A)


    Original     		H5N5001FM REJ03G1112-0200 ADE-208-1380) PRSS0003AD-A O-220FM) H5N5001FM PRSS0003AD-A PDF

    H5N5006FM

    Abstract: H5N5006FM-E PRSS0003AD-A
    Text: H5N5006FM Silicon N Channel MOS FET High Speed Power Switching REJ03G1114-0200 Previous: ADE-208-1112 Rev.2.00 Sep 07, 2005 Features • • • • • Low on-resistance: R DS (on) = 2.5 Ω typ. Low leakage current: IDSS = 1 µA max (at VDS = 500 V) High speed switching: tf = 15 ns typ (at VGS = 10 V, VDD = 250 V, ID = 1.5 A)


    Original     		H5N5006FM REJ03G1114-0200 ADE-208-1112) PRSS0003AD-A O-220FM) H5N5006FM H5N5006FM-E PRSS0003AD-A PDF

    H5N2503P-E

    Abstract: H5N2503P PRSS0004ZE-A SC-65
    Text: H5N2503P Silicon N Channel MOS FET High Speed Power Switching REJ03G1105-0200 Previous: ADE-208-1374A Rev.2.00 Sep 07, 2005 Features • • • • • Low on-resistance: R DS (on) = 0.04 Ω typ. Low leakage current: IDSS = 1 µA max (at VDS = 250 V) High speed switching: tf = 190 ns typ (at VGS = 10 V, VDD = 125 V, ID = 25 A)


    Original     		H5N2503P REJ03G1105-0200 ADE-208-1374A) PRSS0004ZE-A H5N2503P-E H5N2503P PRSS0004ZE-A SC-65 PDF

    TF218THC

    Abstract: No abstract text available
    Text: TF218THC Ordering number : ENA0890 SANYO Semiconductors DATA SHEET N-channel Silicon Junction FET TF218THC Electret Condenser Microphone Applications Features • • • • • • Ultrasmall package facilitates miniaturization in end products. Especially suited for use in electret condenser microphone for audio equipments and telephones.


    Original     		TF218THC ENA0890 A0890-5/5 TF218THC PDF

    Untitled

    Abstract: No abstract text available
    Text: EC4A01LF Ordering number : EN8714 SANYO Semiconductors DATA SHEET EC4A01LF N-Channel Silicon Junction FET Condenser Microphone Applications Features • • • • • • Ultrasmall 1710 size , thin (0.35mm) leadless package. Especially suited for use in condenser microphone for audio equipments and telephones.


    Original     		EC4A01LF EN8714 PDF

    PN4416

    Abstract: BH RV transistor PN4416A
    Text: Philips Semiconductors B i b b 5 3 ^ 31 □ D 5 0 7 3 b 0 3 M A P X N-channel field-effect transistor PN4416; PN4416A AMER PHIL IPS/DISCRETE FEATURES Product specification b?E QUICK REFERENCE DATA MIN. MAX. UNIT PN4416 - 30 V PN4416A - 35 V Idss drain current


    OCR Scan     		DP5HO73 PN4416; PN4416A PN4416 PN4416 BH RV transistor PN4416A PDF

    Untitled

    Abstract: No abstract text available
    Text: D SbE • ^70576 0D07052 7Tb H Z E T B SEMICONDUCTOR DICE MOSFETs - N-CHANNEL B V 0SS Dice type ZVN0540 Min. ZETEX f'DSIonI Max. at lD V qs SEMICONDUCTORS Max. IDSS at Max. IGSS at 'd m Rated VDS V GS=20V Min. atV0S ^GS th Chip Min. Max. at lD geometry at


    OCR Scan     		0D07052 ZVN0540 ZVNL535 ZVN2535 ZVN0124 ZVP2120 ZVP1320 ZVP2110 ZVP3310 ZVP2106 PDF

    JS8834-AS

    Abstract: No abstract text available
    Text: Microwave Semiconductors Power GaAs FETs J10 Type No. Freq. Band GHz S8834 JS8834-AS S8835 JS8835-AS PicB Typ. GiteTyp. (dBm) (dB) Ids = Idss/2 nadd Typ. (%) Ftest (GHz ) Vos (V) 21 9 27 8 10 24 8 26 8 10 29.5 7.5 30 8 10 32 7 28 8 10 33.5 5.5 25 8 10 36


    OCR Scan     		S8834 JS8834-AS S8835 JS8835-AS S8836A S8836B JS8836A-AS S8837A JS8837A-AS S8838A PDF